Abstract: A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.

Abstract: A hybrid power conversion circuit includes a high-side switch, a low-side switch, a transformer, a resonance tank, a first switch, a second switch, a first synchronous rectification switch, a second synchronous rectification switch, and a third switch. The resonance tank has an external inductor, an external capacitance, and an internal inductor. The first switch is connected to the external inductor. The second switch and a first capacitance form a series-connected path, and is connected to the external capacitance. The first and second synchronous rectification switches are respectively coupled to a first winding and a second winding. The third switch is connected to the second synchronous rectification switch. When an output voltage is less than a voltage interval, the hybrid power conversion circuit operates in a hybrid flyback conversion mode, and otherwise the hybrid power conversion circuit operates in a resonance conversion mode.

Abstract: Some embodiments of the present disclosure relate to a processing tool. The tool includes a housing enclosing a processing chamber, and an input/output port configured to pass a wafer through the housing into and out of the processing chamber. A back-side macro-inspection system is arranged within the processing chamber and is configured to image a back side of the wafer. A front-side macro-inspection system is arranged within the processing chamber and is configured to image a front side of the wafer according to a first image resolution. A front-side micro-inspection system is arranged within the processing chamber and is configured to image the front side of the wafer according to a second image resolution which is higher than the first image resolution.

Abstract: An electronic shelf label positioning system, an electronic shelf label and a guide rail. The electronic shelf label positioning system includes the electronic shelf label, the guide rail, a PDA and a background server. The electronic shelf label includes a main control SoC, a card reader IC, a screen and a power supply device. The main control SoC is configured to control the screen display and to communicate with an AP. The power supply device is configured to supply power to the electronic shelf label. The guide rail includes a guide rail identification area and a label area. The label area is installed with a plurality of wireless labels each having a unique non-repeated ID number. The guide rail identification area is installed with an identity recognition device, which includes a guide rail ID consisting of the ID numbers of the wireless labels sequentially arranged and summarized.

Abstract: In some embodiments, the present disclosure relates to a wafer edge trimming apparatus that includes a processing chamber defined by chamber housing. Within the processing chamber is a wafer chuck configured to hold onto a wafer structure. Further, a blade is arranged near an edge of the wafer chuck and configured to remove an edge potion of the wafer structure and to define a new sidewall of the wafer structure. A laser sensor apparatus is configured to direct a laser beam directed toward a top surface of the wafer chuck. The laser sensor apparatus is configured to measure a parameter of an analysis area of the wafer structure. Control circuitry is to the laser sensor apparatus and the blade. The control circuitry is configured to start a damage prevention process when the parameter deviates from a predetermined threshold value by at least a predetermined shift value.

Abstract: A semiconductor transistor structure includes a substrate with a first conductivity type, a fin structure grown on the substrate, and a gate on the fin structure. The fin structure includes a first epitaxial layer having a second conductivity type opposite to the first conductivity type, a second epitaxial layer on the first epitaxial layer, and a third epitaxial layer having the second conductivity type on the second epitaxial layer.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a UE. In certain configurations, the UE establishes a connection supporting an extended reality (XR) application service with a base station. The UE reports, to the base station, a delay status report (DSR) to indicate a buffer size for data to be transmitted to the base station. The DSR includes timing information. The UE receives a configuration instruction from the base station. The UE configures resources on the UE according to the configuration instruction to transmit the data to the base station.

Abstract: An electronic device including a bracket and an antenna is provided. The bracket includes first, second, third, and fourth surfaces. The antenna includes a radiator. The radiator includes first, second, third, and fourth portions. The first portion is located on the first surface and includes connected first and second sections. The second portion is located on the second surface and includes third, fourth, fifth, and sixth sections. The third section, the fourth section, and the fifth sections are bent and connected to form a U shape. The third portion is located on the third surface and is connected to the second section and the fourth section. The fourth portion is located on the fourth surface and is connected to the fifth section, the sixth section, and the third portion. The radiator is adapted to resonate at a low frequency band and a first high frequency band.

Abstract: A bonding tool includes a gas supply line that may extend directly between valves associated with one or more gas supply tanks and a processing chamber such that gas supply line is uninterrupted without any intervening valves or other types of structures that might otherwise cause a pressure buildup in the gas supply line between the processing chamber and the valves associated with the one or more gas supply tanks. The pressure in the gas supply line may be maintained at or near the pressure in the processing chamber so that gas provided to the processing chamber through the gas supply line does not cause a pressure imbalance in the processing chamber, which might otherwise cause early or premature contact between semiconductor substrates that are to be bonded in the processing chamber.

Abstract: The present invention relates to the treatment of herpes simplex virus (HSV) infection using an anti-HSV antibody. In particular, the anti-HSV antibody specifically binds to the glycoprotein D (gD) of herpes simplex virus-1 (HSV-1) and herpes simplex virus-2 (HSV-2). The treatment of the present invention is effective against drug-resistant and/or recurrent HSV infection.

Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.

Abstract: A semiconductor device includes a transistor disposed in an active region. The transistor comprises a source/drain feature, a fin channel and a gate structure wrapping over the fin channel. The transistor also includes an insulation region disposed at an active edge. The active edge is at a boundary of the active region. The insulation region includes a trench. The trench has a tapered portion. A width of the tapered portion of the trench at a top of the fin channel is greater than a width of the tapered portion of the trench at a bottom of the gate structure.

Abstract: A device detecting system is provided. The device detecting system includes a bar code scanner, a plurality of device accommodating spaces, a screen, and a server. The server obtains bar code information via the bar code scanner and opens one of the device accommodating spaces based on the bar code information to accommodate an electronic device. The server performs a test procedure on the electronic device to generate a test result, and displays the test result and operation information corresponding to the test result on the screen.

Abstract: The performance of a neural network (NN) and/or deep neural network (DNN) can limited by the number of operations being performed as well as management of data among the various memory components of the NN/DNN. A sparsity-inducing regularization optimization process is performed on a machine learning model to generate a compressed machine learning model. A machine learning model is trained using a first set of training data. A sparsity-inducing regularization optimization process is executed on the machine learning model. Based on the sparsity-inducing regularization optimization process, a compressed machine learning model is received. The compressed machine learning model is executed to generate one or more outputs.

Abstract: A FinFET includes a semiconductor substrate, a semiconductor fin, a gate structure, and an isolation structure. The semiconductor fin protrudes from the semiconductor substrate. The gate structure is disposed across a first segment of the semiconductor fin. The isolation structure interrupts a continuity of a second segment of the semiconductor fin. The isolation structure has a first portion and a second portion stacked on the first portion. Sidewalls of the first portion are inclined and sidewalls of the second portion are straight. A top surface of the first portion is coplanar with a top surface of the gate structure.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a fin disposed over a semiconductor substrate, and the fin has a first width. The structure further includes an isolation region disposed around the fin, a gate electrode disposed over the fin and the isolation region, and a fill material disposed in the gate electrode. The fill material is in contact with a top surface of a portion of the semiconductor substrate, the top surface has at least a portion having a substantially flat cross-section, and the portion of the top surface has a second width substantially greater than the first width.

Abstract: The performance of a neural network (NN) and/or deep neural network (DNN) can limited by the number of operations being performed as well as management of data among the various memory components of the NN/DNN. A sparsity-inducing regularization optimization process is performed on a machine learning model to generate a compressed machine learning model. A machine learning model is trained using a first set of training data. A sparsity-inducing regularization optimization process is executed on the machine learning model. Based on the sparsity-inducing regularization optimization process, a compressed machine learning model is received. The compressed machine learning model is executed to generate one or more outputs.

Abstract: A method of removing fluoride ion from waste liquid is provided, which includes providing a calcium source and a plurality of ceramic particles to a waste liquid containing fluoride ion for forming a plurality of calcium fluoride layers wrapping the ceramic particles. The calcium fluoride layers are connected to form a calcium fluoride bulk. The ceramic particles are embedded in the calcium fluoride bulk. The ceramic particles and the calcium fluoride bulk have a weight ratio of 1:4 to 1:20.

Abstract: An electronic shelf label positioning system, an electronic shelf label and a guide rail. The electronic shelf label positioning system includes the electronic shelf label, the guide rail, a PDA and a background server. The electronic shelf label includes a main control SoC, a card reader IC, a screen and a power supply device. The main control SoC is configured to control the screen display and to communicate with an AP. The power supply device is configured to supply power to the electronic shelf label. The guide rail includes a guide rail identification area and a label area. The label area is installed with a plurality of wireless labels each having a unique non-repeated ID number. The guide rail identification area is installed with an identity recognition device, which includes a guide rail ID consisting of the ID numbers of the wireless labels sequentially arranged and summarized.

Abstract: An electronic device and a performance optimization method thereof are provided. The electronic device includes a battery module, a processor, and a controller. The battery module is configured to supply power to the electronic device. The processor has a power limit. The controller is configured to monitor a charging and discharging current of the battery module. In a power connection mode, the controller analyzes a status of the battery module and adjusts the power limit of the processor according to the charging and discharging current.