Abstract: Features are disclosed for injection services that allow a development team to quickly and easily include functionality developed by other teams. The main application server injects functionality into responses. The injected service content may include executable content (e.g., scripts) which may be retrieved from a content distribution network. This provides a framework for integrating various, decoupled features into a single main application.

Abstract: An embedded MRAM structure includes a substrate divided into a memory cell region and a logic device region. An active area is disposed in the memory cell region. A word line is disposed on the substrate and crosses the active area. A source plug is disposed in the active area and at one side of the word line. A drain plug is disposed in the in the active area and at another side of the word line. When viewing from a direction perpendicular to the top surface of the substrate and taking the word line as a symmetric axis, the source plug is a mirror image of the drain plug.

Abstract: An on-chip inductor structure includes first and second winding portions symmetrically arranged in an insulating layer by a symmetrical axis. Each of the first and second winding portions includes first and second semi-circular conductive lines concentrically arranged from the inside to the outside. First and second input/output conductive portions are disposed in the insulating layer along the extending direction of the symmetrical axis, to respectively and electrically couple the first ends of the outermost semi-circular conductive lines. A conductive branch structure is disposed in the insulating layer along the symmetrical axis and between the first and second input/output conductive portions, and electrically coupled to first ends of the innermost semi-circular conductive lines. The conductive branch structure has a grounded first end and a second end is electrically coupled to a circuit and is opposite the first end of the conductive branch structure.

Abstract: A semiconductor device includes: a substrate having a magnetic tunneling junction (MTJ) region and a logic region; a magnetic tunneling junction (MTJ) on the MTJ region, wherein a top view of the MTJ comprises a circle; and a first metal interconnection on the MTJ. Preferably, a top view of the first metal interconnection comprises a flat oval overlapping the circle.

Abstract: An embedded MRAM structure includes a substrate divided into a memory cell region and a logic device region. An active area is disposed in the memory cell region. A word line is disposed on the substrate and crosses the active area. A source plug is disposed in the active area and at one side of the word line. A drain plug is disposed in the in the active area and at another side of the word line. When viewing from a direction perpendicular to the top surface of the substrate and taking the word line as a symmetric axis, the source plug is a mirror image of the drain plug.

Abstract: A mask includes a substrate, a main pattern, a first assist pattern, and a second assist pattern. The main pattern is disposed on the substrate. The main pattern includes a first pattern and second patterns. Two of the second patterns are disposed at two opposite sides of the first pattern in a first direction. The first assist pattern is disposed on the substrate and disposed in the main pattern. The second assist pattern is disposed on the substrate and disposed outside the main pattern. The first assist pattern disposed in the main pattern may be used to improve the pattern transferring performance in a photolithography process using the mask.

Abstract: A memory controller is provided. The memory controller is coupled to a flash memory that includes a plurality of physical blocks, and each physical block includes a plurality of physical pages, and some of the physical pages are defective physical pages. The memory controller includes a processor that is configured to set a total target initialization time for an initialization process of the flash memory. The processor sequentially selects a current physical block from among all the physical blocks to perform the initialization process, and it performs a read operation of the initialization process on the current physical block using a read-operation threshold. In response to the read operation of the current physical block being completed, the processor dynamically adjusts the read-operation threshold of the read operation of the physical blocks, so that the initialization process is completed within the total target initialization time.

Abstract: An object attribution analyzing method applied to an object attribution analyzing device and includes dividing a plurality of continuous frames into a current frame and several previous frames, utilizing face detection to track and compute a first attribution predicted value of an object within the current frame, utilizing the face detection to acquire a feature parameter of the object within the current frame for setting a first weighting, acquiring a second attribution predicted value of the object within the several previous frames, setting a second weighting in accordance with the first weighting, and generating a first induction attribution predicted value of the object within the plurality of continuous frames via the first attribution predicted value weighted by the first weighting and the second attribution predicted value weighted by the second weighting.

Abstract: An integrated circuit chip has an active surface and a chip pad arrangement on the active surface. The chip pad arrangement includes four pairs of chip pads arranged in two rows along a side edge of the active surface. Two pairs of chip pads are a first transmission differential pair chip pad and a first reception differential pair chip pad respectively. Positions of the two pairs of chip pads are not adjacent to each other and are in different rows. The other two pairs of chip pads are a second transmission differential chip pad and a second reception differential chip pad respectively. Positions of the other two pairs of chip pads are not adjacent to each other and are in different rows. In addition, a package substrate corresponding to the integrated circuit chip and an electronic assembly including the package substrate and the integrated circuit chip are also provided.

Abstract: A 3D semiconductor structure includes a buffer layer, a n-type high electron mobility transistor (HEMT) disposed on a first surface of the buffer layer, and a p-type high hole mobility transistor (HHMT) disposed on a second surface of the buffer layer opposite to the first surface.

Abstract: Aspects of the disclosed apparatuses, methods, and systems provide arrangement of the visual components of an augmented or virtual display system with optimized telecentricity, focal depth, and wide FOV. The visual components may include a light source and a corresponding optical element.

Abstract: A memory controller is provided. The memory controller is coupled to a flash memory that includes a plurality of physical blocks, and each physical block includes a plurality of physical pages, and some of the physical pages are defective physical pages. The memory controller includes a processor that is configured to set a total target initialization time for an initialization process of the flash memory. The processor sequentially selects a current physical block from among all the physical blocks to perform the initialization process, and it performs a read operation of the initialization process on the current physical block using a read-operation threshold. In response to the read operation of the current physical block being completed, the processor dynamically adjusts the read-operation threshold of the read operation of the physical blocks, so that the initialization process is completed within the total target initialization time.

Abstract: A high electron mobility transistor (HEMT) includes a carrier transit layer, a carrier supply layer, a main gate, a control gate, a source electrode and a drain electrode. The carrier transit layer is on a substrate. The carrier supply layer is on the carrier transit layer. The main gate and the control gate are on the carrier supply layer. The source electrode and the drain electrode are at two opposite sides of the main gate and the control gate, wherein the source electrode is electrically connected to the control gate by a metal interconnect. The present invention also provides a method of forming a high electron mobility transistor (HEMT).

Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a first well and a first dummy cell region. The substrate has a plurality fins disposed therein, and the fins are extended along a first direction. The first well is disposed in the substrate, and a dummy cell region is disposed at a first boundary of the first well. The first dummy cell region includes a first isolation structure and a plurality of first gate structures. The first SDB is disposed in the substrate, along a second direction perpendicular to the first direction to penetrate through one of the fins, and the first gate structures are disposed over the first SDB.

Abstract: A testing probe structure for wafer level testing semiconductor IC packaged devices under test (DUT). The structure includes a substrate, through substrate vias, a bump array formed on a first surface of the substrate for engaging a probe card, and at least one probing unit on a second surface of the substrate. The probing unit includes a conductive probe pad formed on one surface of the substrate and at least one microbump interconnected to the pad. The pads are electrically coupled to the bump array through the vias. Some embodiments include a plurality of microbumps associated with the pad which are configured to engage a mating array of microbumps on the DUT. In some embodiments, the DUT may be probed by applying test signals from a probe card through the bump and microbump arrays without direct probing of the DUT microbumps.

Abstract: A mark pattern includes unit cells immediately adjacent to each other and arranged in a form of dot matrix to form a register mark or an identification code, wherein each unit cell has configuration identical to functional devices of pMOS and nMOS, and each unit cell includes a first active region, a second active region isolated from the first active region, and first gate structures extending along a first direction and are arranged along a second direction perpendicular to the first direction, and the first gate structures straddling the first active region and the second active region, contact structures disposed between the first gate structures on the first active region and the second active region, and via structures disposed on the contact structures and two opposite ends of the first gate structures.

Abstract: A semiconductor device includes: a substrate having a magnetic tunneling junction (MTJ) region and a logic region; a magnetic tunneling junction (MTJ) on the MTJ region, wherein a top view of the MTJ comprises a circle; and a first metal interconnection on the MTJ. Preferably, a top view of the first metal interconnection comprises a flat oval overlapping the circle.

Abstract: A speaker includes a frame and a partition wall. The frame has ribs to define a central through hole and plural side through holes. The partition wall is coupled with the frame to form a boundary between a high-pitched sound zone and a low-pitched sound zone, wherein a total sum area of the side through holes covered by the partition wall is smaller than a total sum area of the side through holes uncovered by the partition wall.