Abstract: An integrated circuit chip includes an analog and/or RF circuit block, a digital circuit, and a seal ring structure surrounding and protecting the analog and/or RF circuit block. The seal ring structure comprises a continuous outer seal ring, and a discontinuous inner seal ring divided into at least a first portion and a second portion. The second portion is situated in front of the analog and/or RF circuit block for shielding a noise from interfering the analog and/or RF circuit block.

Abstract: A semiconductor device assembly includes a first semiconductor die, a second semiconductor die, at least one semiconductor package component or another semiconductor die, a first conductive element and a second conductive element. The first semiconductor die includes at least one bonding pad. The second semiconductor die includes a bonding pad module. The first conductive element is coupled between the bonding pad module of the second semiconductor die and the bonding pad of the first semiconductor die, and the second conductive element is coupled between the bonding pad module of the second semiconductor die and the semiconductor package component or the another semiconductor die, wherein the first semiconductor die is coupled to the semiconductor package component or the another semiconductor die via the bonding pad and the bonding pad module and the first and second conductive elements.

Abstract: An electrical fuse and a method of forming the same are presented. A first-layer conductive line is formed over a base material. A via is formed over the first-layer conductive line. The via preferably comprises a barrier layer and a conductive material. A second-layer conductive line is formed over the via. A first external pad is formed coupling to the first-layer conductive line. A second external pad is formed coupling to the second-layer conductive line. The via, the first conductive line and the second conductive line are adapted to be an electrical fuse. The electrical fuse can be burned out by applying a current. The vertical structure of the preferred embodiment is suitable to be formed in any layer.

Abstract: An e-fuse structure includes a cathode block; a plurality of cathode contact plugs on the cathode block; an anode block; a plurality of anode contact plugs on the cathode block; and a fuse link connecting the cathode block with the anode block, wherein a front row of the cathode contact plugs is disposed in close proximity to the fuse link thereby inducing a high thermal gradient at an interface between the cathode block and the fuse link.

Abstract: An improved fuse link structure and fuse blowing method, the fuse-link structure including a plurality of elongated fuse-link members comprising polysilicon electrically connected in parallel according to a common input Voltage contact and common output current contact to form a fuse-link structure; and, wherein at least a portion of the plurality of elongated fuse-link comprise a different electrical resistance with respect to one another according to a variable condition selected from the group consisting of critical dimension, polysilicon doping condition, and silicide agglomeration condition.

Abstract: A fuse comprises a silicide element disposed above a substrate, a first terminal contact coupled to a first end of the silicide element, and a first metal line disposed above the silicide element and coupled to the first terminal contact. The fuse further comprises a plurality of second terminal contacts coupled to a second end of the silicide element, and a second metal line disposed above the silicide element and coupled to the plurality of second terminal contacts. The silicide element has a sufficient width that a programming potential applied across the first and second metal lines causes a discontinuity in the first terminal contact.

Abstract: An improved fuse link structure and fuse blowing method, the fuse-link structure including a plurality of elongated fuse-link members comprising polysilicon electrically connected in parallel according to a common input Voltage contact and common output current contact to form a fuse-link structure; and, wherein at least a portion of the plurality of elongated fuse-link comprise a different electrical resistance with respect to one another according to a variable condition selected from the group consisting of critical dimension, polysilicon doping condition, and silicide agglomeration condition.

Abstract: An electrical fuse and a method of forming the same are presented. A first-layer conductive line is formed over a base material. A via is formed over the first-layer conductive line. The via preferably comprises a barrier layer and a conductive material. A second-layer conductive line is formed over the via. A first external pad is formed coupling to the first-layer conductive line. A second external pad is formed coupling to the second-layer conductive line. The via, the first conductive line and the second conductive line are adapted to be an electrical fuse. The electrical fuse can be burned out by applying a current. The vertical structure of the preferred embodiment is suitable to be formed in any layer.

Abstract: System and method for providing an electrical fuse having a p-n junction diode. A preferred embodiment comprises a cathode, an anode, and one or more links formed between the cathode and the anode. The cathode and the portion of the cathode adjoining the link are doped with a first impurity, preferably a p-type impurity. The anode and the portion of the link adjoining the anode are doped with a second impurity, preferably an n-type impurity. The junction of the first impurity and the second impurity in the link forms a p-n junction diode. A conductive layer, such as a silicide layer, is formed over the p-n junction diodes. In an alternative embodiment, a plurality of p-n junction diodes may be formed in each link. One or more contacts may be formed to provide electrical contact to the cathode and the anode.

Abstract: System and method for providing an electrical fuse having a p-n junction diode. A preferred embodiment comprises a cathode, an anode, and one or more links formed between the cathode and the anode. The cathode and the portion of the cathode adjoining the link are doped with a first impurity, preferably a p-type impurity. The anode and the portion of the link adjoining the anode are doped with a second impurity, preferably an n-type impurity. The junction of the first impurity and the second impurity in the link forms a p-n junction diode. A conductive layer, such as a silicide layer, is formed over the p-n junction diodes. In an alternative embodiment, a plurality of p-n junction diodes may be formed in each link. One or more contacts may be formed to provide electrical contact to the cathode and the anode.

Abstract: A fuse comprises a silicide element disposed above a substrate, a first terminal contact coupled to a first end of the silicide element, and a first metal line disposed above the silicide element and coupled to the first terminal contact. The fuse further comprises a plurality of second terminal contacts coupled to a second end of the silicide element, and a second metal line disposed above the silicide element and coupled to the plurality of second terminal contacts. The silicide element has a sufficient width that a programming potential applied across the first and second metal lines causes a discontinuity in the first terminal contact.

Abstract: System and method for providing an electrical fuse having a p-n junction diode. A preferred embodiment comprises a cathode, an anode, and one or more links formed between the cathode and the anode. The cathode and the portion of the cathode adjoining the link are doped with a first impurity, preferably a p-type impurity. The anode and the portion of the link adjoining the anode are doped with a second impurity, preferably an n-type impurity. The junction of the first impurity and the second impurity in the link forms a p-n junction diode. A conductive layer, such as a silicide layer, is formed over the p-n junction diodes. In an alternative embodiment, a plurality of p-n junction diodes may be formed in each link. One or more contacts may be formed to provide electrical contact to the cathode and the anode.