Abstract: In some embodiments, the present disclosure relates to a semiconductor device comprising a source and drain region arranged within a substrate. A conductive gate is disposed over a doped region of the substrate. A gate dielectric layer is disposed between the source region and the drain region and separates the conductive gate from the doped region. A bottommost surface of the gate dielectric layer is below a topmost surface of the substrate. First and second sidewall spacers are arranged along first and second sides of the conductive gate, respectively. An inner portion of the first sidewall spacer and an inner portion of the second sidewall spacer respectively cover a first and second top surface of the gate dielectric layer. A drain extension region and a source extension region respectively separate the drain region and the source region from the gate dielectric layer.

Abstract: An improved structure of a vaporized oil lamp container includes a container body to contain oil and a wick for burning at a center insertion module, and a wick seat, characterized in that the container includes a top cover and a body which are insertable to each other, and the interior of the body is a recessed cavity to fill lamp oil, the top cover is an arch-shaped curvature, and the middle section of the body has a smaller diameter forming a neck portion, the top section of the inner edge of the neck section is sealed with an actuating partition to isolate the container into a top and a bottom space, the wick is positioned at the center of the body such that the oil storage space is a sealed storage space, thereby the oil lamp structure is safe to use and the top cover is easily opened to supplement oil to the oil lamp.