Abstract: Some implementations include a method of managing a hosted non-volatile random-access memory (NVRAM) based storage subsystem that includes NVRAM devices. The method includes: receiving, at a device driver on the host computing device, write requests each requesting to write a respective unit of data to the NVRAM-based storage subsystem; categorizing the write requests into subgroups of write requests, where write requests within respective subgroups are mutually exclusive; ascertaining a load condition of each of several of the NVRAM devices of the NVRAM-based storage subsystem; identifying a target location on at least one NVRAM device to service a particular subgroup of write requests according to the ascertained load conditions of the NVRAM devices of the NVRAM-based storage subsystem; and servicing the particular subgroup of write requests by writing the corresponding units of data to the identified target location on the at least one NVRAM device of the NVRAM-based storage subsystem.

Abstract: First data is received for storing in a first asymmetric memory device. A first writing phase is identified as a current writing phase. A first segment included in the first asymmetric memory device is identified as next segment available for writing data. The first data is written to the first segment. Information associated with the first segment is stored, along with information indicating that the first segment is written in the first writing phase. Second data is received for storing in the asymmetric memory. A second segment included in the first asymmetric memory device is identified as the next segment available for writing data. The second data is written to the second segment. Information associated with the second segment and the second memory block is stored along with information indicating that the second segment is written in the second writing phase.

Abstract: In one embodiment of the invention, a memory system includes non-volatile-memory-devices (NVMDs) coupled to memory channels to share busses and a memory controller coupled to the memory channels in communication between the plurality of NVMDs. Each NVMD independently executes a read, write, or erase operation at a time. The memory controller includes channel schedulers to schedule control and data transfers associated with the read, write, and erase operations on the memory channels; and high priority and low priority queues coupled to the channel schedulers. The channel schedulers prioritize operations waiting in the high priority queues over operations waiting in the low priority queues. The channel schedulers further prioritize read operations waiting in either the high priority queue or the low priority queue over write and erase operations waiting in each respective queue.

Abstract: Some implementations provide a method for managing data in a storage system that includes a persistent storage device and a non-volatile random access memory (NVRAM) cache device. The method includes: accessing a direct mapping between a logical address associated with data stored on the persistent storage device and a physical address on the NVRAM cache device; receiving, from a host computing device coupled to the storage system, a request to access a particular unit of data stored on the persistent storage device; using the direct mapping as a basis between the logical address associated with the data stored on the persistent storage device and the physical address on the NVRAM cache device to determine whether the particular unit of data being requested is present on the NVRAM cache device.

Abstract: Some implementations include a method of managing a hosted non-volatile random-access memory (NVRAM) based storage subsystem that includes NVRAM devices. The method includes: receiving, at a device driver on the host computing device, write requests each requesting to write a respective unit of data to the NVRAM-based storage subsystem; categorizing the write requests into subgroups of write requests, where write requests within respective subgroups are mutually exclusive; ascertaining a load condition of each of several of the NVRAM devices of the NVRAM-based storage subsystem; identifying a target location on at least one NVRAM device to service a particular subgroup of write requests according to the ascertained load conditions of the NVRAM devices of the NVRAM-based storage subsystem; and servicing the particular subgroup of write requests by writing the corresponding units of data to the identified target location on the at least one NVRAM device of the NVRAM-based storage subsystem.

Abstract: First data is received for storing in a first asymmetric memory device. A first writing phase is identified as a current writing phase. A first segment included in the first asymmetric memory device is identified as next segment available for writing data. The first data is written to the first segment. Information associated with the first segment is stored, along with information indicating that the first segment is written in the first writing phase. Second data is received for storing in the asymmetric memory. A second segment included in the first asymmetric memory device is identified as the next segment available for writing data. The second data is written to the second segment. Information associated with the second segment and the second memory block is stored along with information indicating that the second segment is written in the second writing phase.

Abstract: Some implementations provide a method for managing data in a storage system that includes a persistent storage device and a non-volatile random access memory (NVRAM) cache device. The method includes: accessing a direct mapping between a logical address associated with data stored on the persistent storage device and a physical address on the NVRAM cache device; receiving, from a host computing device coupled to the storage system, a request to access a particular unit of data stored on the persistent storage device; using the direct mapping as a basis between the logical address associated with the data stored on the persistent storage device and the physical address on the NVRAM cache device to determine whether the particular unit of data being requested is present on the NVRAM cache device.

Abstract: A first portion of an asymmetric memory is configured as temporary storage for application data units with sizes corresponding to a small memory block that is smaller than the size of a logical write unit associated with the asymmetric memory. A portion of the remaining asymmetric memory is configured as a reconciled storage for application data units with varying sizes. A first application data unit is received for writing to the asymmetric memory. Based on computing the size of the first application data unit as corresponding to the small memory block, the first application data unit is written to the temporary storage. Upon determining that a threshold is reached, a memory write operation is performed for writing the application data units from the temporary storage to the reconciled storage. The application data units written to the reconciled storage are removed from the temporary storage.

Abstract: A first portion of an asymmetric memory is configured as temporary storage for application data units with sizes corresponding to a small memory block that is smaller than the size of a logical write unit associated with the asymmetric memory. A portion of the remaining asymmetric memory is configured as a reconciled storage for application data units with varying sizes. A first application data unit is received for writing to the asymmetric memory. Based on computing the size of the first application data unit as corresponding to the small memory block, the first application data unit is written to the temporary storage. Upon determining that a threshold is reached, a memory write operation is performed for writing the application data units from the temporary storage to the reconciled storage. The application data units written to the reconciled storage are removed from the temporary storage.

Abstract: In one embodiment of the invention, a memory system includes non-volatile-memory-devices (NVMDs) coupled to memory channels to share busses and a memory controller coupled to the memory channels in communication between the plurality of NVMDs. Each NVMD independently executes a read, write, or erase operation at a time. The memory controller includes channel schedulers to schedule control and data transfers associated with the read, write, and erase operations on the memory channels; and high priority and low priority queues coupled to the channel schedulers. The channel schedulers prioritize operations waiting in the high priority queues over operations waiting in the low priority queues. The channel schedulers further prioritize read operations waiting in either the high priority queue or the low priority queue over write and erase operations waiting in each respective queue.

Abstract: Some implementations include a method of managing a hosted non-volatile random-access memory (NVRAM) based storage subsystem that includes NVRAM devices. The method includes: receiving, at a device driver on the host computing device, write requests each requesting to write a respective unit of data to the NVRAM-based storage subsystem; categorizing the write requests into subgroups of write requests, where write requests within respective subgroups are mutually exclusive; ascertaining a load condition of each of several of the NVRAM devices of the NVRAM-based storage subsystem; identifying a target location on at least one NVRAM device to service a particular subgroup of write requests according to the ascertained load conditions of the NVRAM devices of the NVRAM-based storage subsystem; and servicing the particular subgroup of write requests by writing the corresponding units of data to the identified target location on the at least one NVRAM device of the NVRAM-based storage subsystem.

Abstract: Some implementations include a method of managing a hosted non-volatile random-access memory (NVRAM) based storage subsystem that includes NVRAM devices. The method includes: receiving, at a device driver on the host computing device, write requests each requesting to write a respective unit of data to the NVRAM-based storage subsystem; categorizing the write requests into subgroups of write requests, where write requests within respective subgroups are mutually exclusive; ascertaining a load condition of each of several of the NVRAM devices of the NVRAM-based storage subsystem; identifying a target location on at least one NVRAM device to service a particular subgroup of write requests according to the ascertained load conditions of the NVRAM devices of the NVRAM-based storage subsystem; and servicing the particular subgroup of write requests by writing the corresponding units of data to the identified target location on the at least one NVRAM device of the NVRAM-based storage subsystem.

Abstract: Some implementations include a method of managing a hosted non-volatile random-access memory (NVRAM) based storage subsystem that includes NVRAM devices. The method includes: receiving, at a device driver on the host computing device, write requests each requesting to write a respective unit of data to the NVRAM-based storage subsystem; categorizing the write requests into subgroups of write requests, where write requests within respective subgroups are mutually exclusive; ascertaining a load condition of each of several of the NVRAM devices of the NVRAM-based storage subsystem; identifying a target location on at least one NVRAM device to service a particular subgroup of write requests according to the ascertained load conditions of the NVRAM devices of the NVRAM-based storage subsystem; and servicing the particular subgroup of write requests by writing the corresponding units of data to the identified target location on the at least one NVRAM device of the NVRAM-based storage subsystem.

Abstract: First data is received for storing in a first asymmetric memory device. A first writing phase is identified as a current writing phase. A first segment included in the first asymmetric memory device is identified as next segment available for writing data. The first data is written to the first segment. Information associated with the first segment is stored, along with information indicating that the first segment is written in the first writing phase. Second data is received for storing in the asymmetric memory. A second segment included in the first asymmetric memory device is identified as the next segment available for writing data. The second data is written to the second segment. Information associated with the second segment and the second memory block is stored along with information indicating that the second segment is written in the second writing phase.

Abstract: In one embodiment of the invention, a memory system includes non-volatile-memory-devices (NVMDs) coupled to memory channels to share busses and a memory controller coupled to the memory channels in communication between the plurality of NVMDs. Each NVMD independently executes a read, write, or erase operation at a time. The memory controller includes channel schedulers to schedule control and data transfers associated with the read, write, and erase operations on the memory channels; and high priority and low priority queues coupled to the channel schedulers. The channel schedulers prioritize operations waiting in the high priority queues over operations waiting in the low priority queues. The channel schedulers further prioritize read operations waiting in either the high priority queue or the low priority queue over write and erase operations waiting in each respective queue.