Abstract: After a trench 54 is formed in a conductive foil 60, the circuit elements are mounted, and the insulating resin is applied on the conductive foil 60 as the support substrate. After being inverted, the conductive foil 60 is polished on the insulating resin 50 as the support substrate for separation into the conductive paths. Accordingly, it is possible to fabricate the circuit device in which the conductive paths 51 and the circuit elements 52 are supported by the insulating resin 50, without the use of the support substrate. And the interconnects L1 to L3 requisite for the circuit are formed, and can be prevented from slipping because of the curved structure 59 and a visor 58.

Abstract: After a trench 54 is formed in a first conductive foil 60A, the circuit elements are mounted, and the insulating resin is applied on the laminated conductive foil 60 as the support substrate. After being inverted, a second conductive foil 60B is etched on the insulating resin 50 as the support substrate for separation into the conductive paths. Accordingly, it is possible to fabricate the circuit device in which the conductive paths 51 and the circuit elements 52 are supported by the insulating resin 50, without the use of the support substrate. And the interconnects L1 to L3 for the circuit are formed, and can be prevented from slipping because of the curved structure and a visor 58.

Abstract: A light irradiating device (68) having the good radiation characteristic comprises a plurality of conductive paths (51) that are electrically separated, a photo semiconductor chips (65) fixed onto desired conductive path (51), and a resin (67) for covering the photo semiconductor chips (65) to support the conductive paths (51) integrally.

Abstract: After a trench 54 is formed in a conductive foil 60, the circuit elements are mounted, and the insulating resin is applied on the conductive foil 60 as the support substrate. After being inverted, the conductive foil 60 is polished on the insulating resin 50 as the support substrate for separation into the conductive paths. Accordingly, it is possible to fabricate the circuit device in which the conductive paths 51 and the circuit elements 52 are supported by the insulating resin 50, without the use of the support substrate. And the interconnects L1 to L3 requisite for the circuit are formed, and can be prevented from slipping because of the curved structure 59 and a visor 58.

Abstract: After a trench 54 is formed in a conductive foil 60, a circuit element is mounted in a flip chip method. Then, an insulating resin 50 is covered on the conductive foil 60 as a support substrate. After reversion, the conductive foil 60 is polished over the insulating resin 50 as a support substrate at this time to separate the conductive paths. Accordingly, a circuit device having the conductive paths 51 and the circuit elements 52 supported by the insulating resin 50 can be produced without employing the support substrate.

Abstract: There are provided the steps of preparing a conductive foil and then forming a plurality of conductive paths by forming isolation trenches, which are shallower than a thickness of the conductive foil, in the conductive foil except at least areas serving as the conductive paths, fixing respective photo semiconductor chips (65) to desired conductive paths, molding a light transparent resin (67) serving as a lens to cover respective photo semiconductor chips (65) individually and to fill the isolation trenches, and removing the conductive foil on the side on which the isolation trenches are not provided. Therefore, a light irradiating device (68), in which back surfaces of the conduction paths can be connected to the outside to thus eliminate through holes and which has the good radiation characteristic, can be implemented.

Abstract: A semiconductor device is provided wherein conductive paths 40, formed of crystal that grows better along the X-Y axis than along the Z axis, are embedded in an insulating resin 44, and the back surface of the conductive path 40 is exposed through the insulating resin 44 and sealed. With this arrangement, fractures of the conductive paths 40 embedded in the insulating resin 44 are suppressed.

Abstract: A semiconductor device is provided wherein conductive paths 40, formed of crystal that grows better along the X-Y axis than along the Z axis, are embedded in an insulating resin 44, and the back surface of the conductive path 40 is exposed through the insulating resin 44 and sealed. With this arrangement, fractures of the conductive paths 40 embedded in the insulating resin 44 are suppressed.

Abstract: After a trench 54 is formed in a conductive foil 60, a circuit element is mounted in a flip chip method. Then, an insulating resin 50 is covered on the conductive foil 60 as a support substrate. After reversion, the conductive foil 60 is polished over the insulating resin 50 as a support substrate at this time to separate the conductive paths. Accordingly, a circuit device having the conductive paths 51 and the circuit elements 52 supported by the insulating resin 50 can be produced without employing the support substrate.

Abstract: There are provided the steps of preparing a conductive foil and then forming a plurality of conductive paths by forming isolation trenches, which are shallower than a thickness of the conductive foil, in the conductive foil except at least areas serving as the conductive paths, fixing respective photo semiconductor chips (65) to desired conductive paths, molding a light transparent resin (67) serving as a lens to cover respective photo semiconductor chips (65) individually and to fill the isolation trenches, and removing the conductive foil on the side on which the isolation trenches are not provided. Therefore, a light irradiating device (68), in which back surfaces of the conduction paths can be connected to the outside to thus eliminate through holes and which has the good radiation characteristic, can be implemented.

Abstract: A light irradiating device (68) having the good radiation characteristic comprises a plurality of conductive paths (51) that are electrically separated, a photo semiconductor chips (65) fixed onto desired conductive path (51), and a resin (67) for covering the photo semiconductor chips (65) to support the conductive paths (51) integrally.

Abstract: By forming a flat member 10 forming a conductive film 11 having substantially same pattern with a second bonding pad 17, a wiring 18, and an electrode 19 for taking out, or forming a flat member 30 half-etched through the conductive film 11, it is possible to manufacture a semiconductor device 23 of BGA structure using a back process of a semiconductor maker.

Abstract: After a trench 14 has been formed in a conductive foil 60, a circuit element is mounted on the conductive foil 60. The surface of the structure is covered with insulating resin 10 using the conductive foil 60 as a supporting board. After the structure has been turned upside down, this time, the conductive foil is polished using the insulating resin 10 as a supporting board so that it is separated into conductive paths 11. Therefore, a semiconductor device 13 in which the conductive paths 11 and the semiconductor chip 12 are supported by the insulating resin 10 can be realized with no supporting board. In addition, since the semiconductor chip 12 is thermally coupled with a conductive path 11A, heat generated in the semiconductor chip 12 can be radiated externally.