Abstract: Undesirable metal contamination from a selective metal deposition process can be minimized or eliminated by employing a first material layer on a bevel and a back side of a substrate, while providing a second material layer only on a front side of the substrate. The first material layer and the second material layer are selected such that a selective deposition process of a metal material provides a metal material portion only on the second material layer, while no deposition occurs on the first material layer or isolated islands of the metal material are formed on the first material layer. Any residual metal material can be removed from the bevel and the back side by a wet etch to reduce or prevent metal contamination from the deposited metal material.

Abstract: Disclosed is a substrate liquid processing apparatus including a substrate holding unit configured to hold a substrate; a processing liquid nozzle configured to supply a processing liquid to the substrate held by the substrate holding unit; a nozzle arm configured to hold the processing liquid nozzle; and an arm cleaning tank configured to immerse the entire surface of the nozzle arm in a cleaning liquid so as to clean the nozzle arm.

Abstract: Disclosed is a substrate liquid processing apparatus including a substrate holding unit configured to hold a substrate; a processing liquid nozzle configured to supply a processing liquid to the substrate held by the substrate holding unit; a nozzle arm configured to hold the processing liquid nozzle; and an arm cleaning tank configured to immerse the entire surface of the nozzle arm in a cleaning liquid so as to clean the nozzle arm.

Abstract: Undesirable metal contamination from a selective metal deposition process can be minimized or eliminated by employing a first material layer on a bevel and a back side of a substrate, while providing a second material layer only on a front side of the substrate. The first material layer and the second material layer are selected such that a selective deposition process of a metal material provides a metal material portion only on the second material layer, while no deposition occurs on the first material layer or isolated islands of the metal material are formed on the first material layer. Any residual metal material can be removed from the bevel and the back side by a wet etch to reduce or prevent metal contamination from the deposited metal material.

Abstract: The semiconductor device fabrication method of the present invention includes: laminating a plurality of amorphous silicon films on a semiconductor substrate, forming through-holes that pass through the plurality of amorphous silicon films, and subjecting the plurality of amorphous silicon films 301 that include the through-holes to an etching process that uses an alkaline aqueous solution; wherein the plurality of amorphous silicon films is formed to include a first amorphous silicon film and a second amorphous silicon film in which the rate of etching by using the alkaline aqueous solution is slower than that of the first amorphous silicon film and the first amorphous silicon film is interposed between the semiconductor substrate and the second amorphous silicon film.

Abstract: A liquid processing apparatus of the present disclosure performs a liquid processing by supplying a processing liquid to a substrate that is rotating. A substrate holding unit configured to be rotatable around a vertical axis is provided with a holding surface to attract and hold a bottom surface of the substrate horizontally. A guide unit is formed integrally with the substrate holding unit, disposed around the substrate held in the substrate holding unit, and provided at a position equal to or lower than a height of a top surface of a periphery of the substrate. The guide unit includes a guide surface configured to guide the processing liquid. A rotary cup rotates integrally with the substrate holding unit, and guides the processing liquid towards the cup between the rotary cup and the guide unit.

Abstract: A substrate processing includes a holding mechanism, a plurality of nozzles, and an adjusting unit. The holding mechanism rotatably holds a substrate. The nozzles are disposed to be arranged in a diametric direction of the substrate held by the holding mechanism and supply a chemical liquid to the substrate. The adjusting unit supplies a chemical liquid of a first temperature and a chemical liquid of a second temperature to each of the plurality of nozzles in a predetermined ratio, in which the second temperature is higher than the first temperature. The adjusting unit supplies the chemical liquid of the second temperature in a higher ratio to a nozzle disposed at an outer circumference side of the substrate than to a nozzle disposed at a center side of the substrate. In addition, the adjusting unit supplies the chemical liquid of the second temperature in a higher ratio to the nozzle disposed at the outer circumference side of the substrate than to the nozzle disposed at the center side of the substrate.

Abstract: The semiconductor device fabrication method of the present invention includes: laminating a plurality of amorphous silicon films on a semiconductor substrate, forming through-holes that pass through the plurality of amorphous silicon films, and subjecting the plurality of amorphous silicon films 301 that include the through-holes to an etching process that uses an alkaline aqueous solution; wherein the plurality of amorphous silicon films is formed to include a first amorphous silicon film and a second amorphous silicon film in which the rate of etching by using the alkaline aqueous solution is slower than that of the first amorphous silicon film and the first amorphous silicon film is interposed between the semiconductor substrate and the second amorphous silicon film.

Abstract: Disclosed are a liquid processing apparatus and a liquid processing method in which a substrate is processed by a processing liquid in the form of liquid droplets. The liquid processing apparatus includes: a first processing liquid ejecting unit configured to eject a first processing liquid in a form of liquid droplets which contains pure water toward the surface of the substrate; and a second processing liquid ejecting unit configured to eject a second processing liquid as a continuous liquid stream toward the surface of the substrate processed by the first processing liquid in the form of the liquid droplets. The second processing liquid inverts a zeta potential on the surface of the substrate into a negative zeta potential.