Abstract: A joining device for joining substrates together includes a first holding member configured to vacuum-suck a first substrate to draw and hold the first substrate on a lower surface thereof, and a second holding member disposed below the first holding member and configured to vacuum-suck a second substrate to draw and hold the second substrate on an upper surface thereof. The second holding member includes a body portion formed into a size larger than the second substrate when seen in a plan view and configured to vacuum-suck the second substrate, a plurality of pins provided on the body portion and configured to make contact with a rear surface of the second substrate, and an outer wall portion annularly provided on the body portion at an outer side of the plurality of pins and configured to support an outer periphery portion of the rear surface of the second substrate.

Abstract: A joining device for joining substrates together includes a first holding member configured to vacuum-suck a first substrate to draw and hold the first substrate on a lower surface thereof, and a second holding member disposed below the first holding member and configured to vacuum-suck a second substrate to draw and hold the second substrate on an upper surface thereof. The second holding member includes a body portion formed into a size larger than the second substrate when seen in a plan view and configured to vacuum-suck the second substrate, a plurality of pins provided on the body portion and configured to make contact with a rear surface of the second substrate, and an outer wall portion annularly provided on the body portion at an outer side of the plurality of pins and configured to support an outer periphery portion of the rear surface of the second substrate.

Abstract: A joining device for joining substrates together includes a first holding member configured to vacuum-suck a first substrate to draw and hold the first substrate on a lower surface thereof, and a second holding member disposed below the first holding member and configured to vacuum-suck a second substrate to draw and hold the second substrate on an upper surface thereof. The second holding member includes a body portion formed into a size larger than the second substrate when seen in a plan view and configured to vacuum-suck the second substrate, a plurality of pins provided on the body portion and configured to make contact with a rear surface of the second substrate, and an outer wall portion annularly provided on the body portion at an outer side of the plurality of pins and configured to support an outer periphery portion of the rear surface of the second substrate.

Abstract: A joining device for joining substrates together includes a first chuck configured to draw and hold a first substrate on a lower surface thereof, a second chuck provided below the first chuck and configured to draw and hold a second substrate on an upper surface thereof, and a chuck holding unit provided below the second chuck, the chuck holding unit including an upper surface and suction grooves annularly formed on the upper surface of the chuck holding unit, the suction grooves configured to vacuum-suck the second chuck to draw and hold the second chuck.

Abstract: Provided is a method of bonding substrates having a same planar shape, which includes: bonding a first substrate adsorbed to a lower surface of a first holding member and a second substrate adsorbed to an upper surface of a second holding member that is disposed below the first holding member; and determining whether a bonding position of the first substrate and the second substrate is acceptable by measuring an outer diameter of an overlapped substrate obtained by bonding the first substrate and the second substrate, wherein the determining decides that, when the measurement result is less than a predetermined threshold value, the bonding position of the first substrate and the second substrate is normal, and when the measurement result is equal to or greater than the predetermined threshold value, the bonding position of the first substrate and the second substrate is abnormal.

Abstract: A liquid processing apparatus includes: a processing part 80 configured to process an object to be processed by a process liquid; a supply path 1 connected to the processing part 80, the supply path 1 being configured to guide the process liquid to the processing part 80; a solvent supply part 7 configured to supply a solvent to the supply path 1; and a chemical-liquid supply part 5 configured to supply a chemical liquid to the supply path 1 through a chemical-liquid supply path so as to generate a chemical liquid diluted with the solvent. A measuring part 10, which is configured to measure a conductivity of the chemical liquid diluted with the solvent, is disposed in the supply path at a position downstream from a connection points 25a, 35a, 45a, to which the chemical-liquid supply path 6 is connected.

Abstract: Disclosed is to supply processing liquid having a predetermined flow rate and concentration to substrate processing units of a substrate processing apparatus with high accuracy. The substrate processing apparatus, which processes substrates in the substrate processing units using the processing liquid supplied from a processing liquid supply part, sequentially carries the substrates to the respective substrate processing units, and controls the processing start time such that if the flow rate of the processing liquid used in one of the substrate processing units is less than the control flow rate that is controllable at the processing liquid supply part, the substrates are carried to the plurality of substrate processing units until a flow rate of the processing liquid reaches the control flow rate that is controllable at the processing liquid supply part and then the processing liquid is used simultaneously in the plurality of the substrate processing units.

Abstract: Disclosed is to supply processing liquid having a predetermined flow rate and concentration to substrate processing units of a substrate processing apparatus with high accuracy. The substrate processing apparatus, which processes substrates in the substrate processing units using the processing liquid supplied from a processing liquid supply part, sequentially carries the substrates to the respective substrate processing units, and controls the processing start time such that if the flow rate of the processing liquid used in one of the substrate processing units is less than the control flow rate that is controllable at the processing liquid supply part, the substrates are carried to the plurality of substrate processing units until a flow rate of the processing liquid reaches the control flow rate that is controllable at the processing liquid supply part and then the processing liquid is used simultaneously in the plurality of the substrate processing units.

Abstract: Disclosed is a substrate processing apparatus to supply processing liquid having a predetermined flow rate and concentration to a substrate processing unit of the substrate processing apparatus with high accuracy. The substrate processing apparatus processes substrates in a plurality of substrate processing units by using the processing liquid supplied from a processing liquid supply part. If the flow rate of the processing liquid simultaneously used by the substrate processing units is less than a control flow rate that is controllable at the processing liquid supply part, the processing liquid is supplied from the processing liquid supply part such that the flow rate of the processing liquid is substantially identical to the control flow rate.

Abstract: A liquid processing apparatus includes: a processing part 80 configured to process an object to be processed by a process liquid; a supply path 1 connected to the processing part 80, the supply path 1 being configured to guide the process liquid to the processing part 80; a solvent supply part 7 configured to supply a solvent to the supply path 1; and a chemical-liquid supply part 5 configured to supply a chemical liquid to the supply path 1 through a chemical-liquid supply path so as to generate a chemical liquid diluted with the solvent. A measuring part 10, which is configured to measure a conductivity of the chemical liquid diluted with the solvent, is disposed in the supply path at a position downstream a connection points 25a, 35a, 45a, to which the chemical-liquid supply path 6 is connected.

Abstract: Pluralities of ultrasonic transducers are arranged on the bottom wall of the cleaning tank. The output power of the ultrasonic oscillator is supplied to the transducers through the switching unit, which switches the drive mode between a first mode in which all the ultrasonic transducers are supplied with the output power and thus are excited, and a second mode in which only a part or parts of the ultrasonic transducers are supplied with the output power generated by the ultrasonic oscillator. The first mode is used when cleaning substrates not-resistant to vibration, and the second mode is used when cleaning substrates resistant to vibration.

Abstract: An edge remover is provided in the vicinity of an edge portion of a wafer subjected to copper plating. An aqueous hydrogen peroxide is supplied to the edge portion of the wafer from a first nozzle provided at an inner side for a radial direction of the wafer. Next, diluted hydrofluoric acid is supplied to the edge portion of the wafer from a second nozzle provided at an outer side for the radial direction thereof.

Abstract: Pluralities of ultrasonic transducers are arranged on the bottom wall of the cleaning tank. The output power of the ultrasonic oscillator is supplied to the transducers through the switching unit, which switches the drive mode between a first mode in which all the ultrasonic transducers are supplied with the output power and thus are excited, and a second mode in which only a part or parts of the ultrasonic transducers are supplied with the output power generated by the ultrasonic oscillator. The first mode is used when cleaning substrates not-resistant to vibration, and the second mode is used when cleaning substrates resistant to vibration.

Abstract: A cleaning equipment generally comprises: a cleaning bath 30 for storing therein a cleaning solution to allow a semiconductor wafer W to be dipped in the cleaning solution to clean the surface of the wafer W; a cleaning solution supply pipe 33 for connecting the cleaning bath 30 to a pure water supply source 31; a chemical storing container 34 for storing therein a chemical; a chemical supply pipe 36 for connecting the cleaning solution supply pipe 33 to the chemical storing container 34 via an injection shut-off valve 35; and a diaphragm pump 37 for injecting a predetermined amount of chemical from the chemical storing container 34 into pure water flowing through the cleaning solution supply pipe 33. The temperature of the cleaning solution in the cleaning bath 30 is detected by, e.g., a temperature sensor 44.

Abstract: A substrate processing apparatus (1) for processing wafers (W) has a first processing chamber (2) capable of containing the wafers (W) and a second processing chamber (4) capable of containing the wafers (W). The second processing chamber (4) is formed below and near the first processing chamber (2) and is capable of communicating with the first processing chamber (2). A wafer guide (6) carries the wafers (W) vertically between the first and second processing chambers (2, 4). A shutter (7) is opened to allow the first and second processing chambers (2, 4) to communicate with each other and is closed to isolate the same from each other. A steam supply system (8) including steam supply port, an ozone gas supply system (9) including ozone gas supply port and an IPA supply system (10) including IPA supply port are combined with the first processing chamber (2).

Abstract: A substrate processing apparatus (1) for processing wafers (W) has a first processing chamber (2) capable of containing the wafers (W) and a second processing chamber (4) capable of containing the wafers (W). The second processing chamber (4) is formed below and near the first processing chamber (2) and is capable of communicating with the first processing chamber (2). A wafer guide (6) carries the wafers (W) vertically between the first and second processing chambers (2, 4). A shutter (7) is opened to allow the first and second processing chambers (2, 4) to communicate with each other and is closed to isolate the same from each other. A steam supply system (8) including steam supply port, an ozone gas supply system (9) including ozone gas supply port and an IPA supply system (10) including IPA supply port are combined with the first processing chamber (2).

Abstract: A cleaning tank 30 stores a cleaning liquid to clean the surfaces of semiconductor wafers W immersed in the cleaning liquid. A cleaning liquid supply pipe 33 connects the cleaning tank 30 to a pure water supply source 31. A chemical liquid container 34 stores a chemical liquid, and a chemical liquid supply pipe 36 connects the cleaning liquid supply pipe 33 to the chemical liquid container 34 via an infusion open/close switching valve 35, and a chemical liquid feed means is interposed in the chemical liquid supply pipe 36. The chemical liquid feed means is a reciprocal pump, such as diaphragm pump 37. Thus, a predetermined quantity of the chemical liquid can be infused into pure water or to a drying gas generator to ensure that the chemical liquid of a predetermined concentration be available for washing or drying treatment, regardless of fluctuations in flow amount or pressure of pure water or a drying gas carrier gas.

Abstract: An edge remover is provided in the vicinity of an edge portion of a wafer subjected to copper plating. An aqueous hydrogen peroxide is supplied to the edge portion of the wafer from a first nozzle provided at an inner side for a radial direction of the wafer. Next, diluted hydrofluoric acid is supplied to the edge portion of the wafer from a second nozzle provided at an outer side for the radial direction thereof.

Abstract: A substrate processing apparatus (1) for processing wafers (W) has a first processing chamber (2) capable of containing the wafers (W) and a second processing chamber (4) capable of containing the wafers (W). The second processing chamber (4) is formed below and near the first processing chamber (2) and is capable of communicating with the first processing chamber (2). A wafer guide (6) carries the wafers (W) vertically between the first and second processing chambers (2, 4). A shutter (7) is opened to allow the first and second processing chambers (2, 4) to communicate with each other and is closed to isolate the same from each other. A steam supply system (8) including steam supply port, an ozone gas supply system (9) including ozone gas supply port and an IPA supply system (10) including IPA supply port are combined with the first processing chamber (2).

Abstract: Cleaning liquid supply nozzles 32 are provided within a processing tank 30 for cleaning semiconductor wafers W. A distilled water source 31 and the cleaning liquid supply nozzles 32 are connected via a distilled water supply pipeline 33 and a chemical supply tank 36 and the cleaning liquid supply nozzles 32 are connected via a chemical supply pipeline 35. A flow-rate adjustment valve 37 is provided in the distilled water supply pipeline 33, and the supply of distilled water from the distilled water supply pipeline 33 to the processing tank 30 and the supply of a chemical from the chemical supply pipeline 35 to the processing tank 30 are switched by a switching valve 34.