Abstract: Cleaning liquid supply nozzles 32 are provided within a processing tank 30 for cleaning semiconductor wafers W. A distilled water source 31 and the cleaning liquid supply nozzles 32 are connected via a distilled water supply pipeline 33 and a chemical supply tank 36 and the cleaning liquid supply nozzles 32 are connected via a chemical supply pipeline 35. A flow-rate adjustment valve 37 is provided in the distilled water supply pipeline 33, and the supply of distilled water from the distilled water supply pipeline 33 to the processing tank 30 and the supply of a chemical from the chemical supply pipeline 35 to the processing tank 30 are switched by a switching valve 34.

Abstract: A cleaning apparatus has a processing tank (21) for containing a processing liquid in which semiconductor wafers (W) are immersed, and a tubular vessel(22a) having a processing chamber (23) containing the processing tank (21). A side wall (26) of the vessel (22a), and a first partition wall (28) having an upright wall (27) standing on a bottom plate (23a) defining the bottom of the processing chamber (23) form a side ventilating duct (24). The bottom wall (30) of the vessel (22a), and a second partition wall (29) substantially horizontally extending from the lower end of the first partition wall (28) form a bottom ventilating duct (25). The side ventilating duct (24) and the bottom ventilating duct (25) can compactly arrange devices and pipes for supplying and discharging the cleaning liquid for cleaning semiconductor wafers (W), easily maintain the devices and pipes, easily arrange a ventilating system to the cleaning apparatus, and improve ventilation efficiency.

Abstract: A substrate processing apparatus (1) for processing wafers (W) has a first processing chamber (2) capable of containing the wafers (W) and a second processing chamber (4) capable of containing the wafers (W). The second processing chamber (4) is formed below and near the first processing chamber (2) and is capable of communicating with the first processing chamber (2). A wafer guide (6) carries the wafers (W) vertically between the first and second processing chambers (2, 4). A shutter (7) is opened to allow the first and second processing chambers (2, 4) to communicate with each other and is closed to isolate the same from each other. A steam supply system (8) including steam supply port, an ozone gas supply system (9) including ozone gas supply port and an IPA supply system (10) including IPA supply port are combined with the first processing chamber (2).

Abstract: A cleaning method for cleaning, an object to be, processed. The object is cleaned by immersing the object into a cleaning liquid within a processing tank. The cleaning method includes the steps of: detecting the temperature of the cleaning liquid in which the object to be processed is immersed or to be immersed, and generating a corresponding temperature signal; determining an immersion time for the immersion of the object in the cleaning liquid, based on the temperature signal; and immersing the object to be processed in the cleaning liquid, for the immersion time.

Abstract: A cleaning equipment generally comprises: a cleaning bath 30 for storing therein a cleaning solution to allow a semiconductor wafer W to be dipped in the cleaning solution to clean the surface of the wafer W; a cleaning solution supply pipe 33 for connecting the cleaning bath 30 to a pure water supply source 31; a chemical storing container 34 for storing therein a chemical; a chemical supply pipe 36 for connecting the cleaning solution supply pipe 33 to the chemical storing container 34 via an injection shut-off valve 35; and a diaphragm pump 37 for injecting a predetermined amount of chemical from the chemical storing container 34 into pure water flowing through the cleaning solution supply pipe 33. The temperature of the cleaning solution in the cleaning bath 30 is detected by, e.g., a temperature sensor 44.

Abstract: An ultrasonic cleaning apparatus has an intermediate tank having a space divided into a liquid storing region (2a) and a liquid recovering region (2b) by a partition plate (5). An ultrasonic unit (3) is disposed in the bottom of the liquid storing region (2a). A vibration propagating liquid, such as pure water, is contained in the liquid storing region (2a) and a lower part of a cleaning tank (1) is immersed in the vibration propagating liquid stored in the liquid storing region (2a). The partition plate (5) is provided in its upper edge (5c) with a plurality of V-shaped notches (9). A nozzle pipe (4) provided with a plurality of nozzle holes (4a) is disposed in a side of the liquid storing region (2a) opposite a side in which the partition plate (5) is disposed. Pure water jetted by the nozzle pipe (4) toward the outer surface (1a) of the bottom wall of the cleaning tank (1) flows along the outer surface (1a) and overflows the partition plate (5) into the liquid recovering region (2b).

Abstract: A cleaning tank 30 stores a cleaning liquid to clean the surfaces of semiconductor wafers W immersed in the cleaning liquid. A cleaning liquid supply pipe 33 connects the cleaning tank 30 to a pure water supply source 31. A chemical liquid container 34 stores a chemical liquid, and a chemical liquid supply pipe 36 connects the cleaning liquid supply pipe 33 to the chemical liquid container 34 via an infusion open/close switching valve 35, and a chemical liquid feed means is interposed in the chemical liquid supply pipe 36. The chemical liquid feed means is a reciprocal pump, such as diaphragm pump 37. Thus, a predetermined quantity of the chemical liquid can be infused into pure water or to a drying gas generator to ensure that the chemical liquid of a predetermined concentration be available for washing or drying treatment, regardless of fluctuations in flow amount or pressure of pure water or a drying gas carrier gas.

Abstract: A drying treatment apparatus for drying cleaned semiconductor wafers comprises drying gas producing means (41) connected to a drying treating unit (30) through a drying gas supplying pipe line (32). A flowrate controlling diaphragm pump (50) is provided in an isopropyl alcohol (IPA) supplying pipe line (32) that connects an IPA tank (48) and the drying gas producing means (41). An N.sub.2 gas supply source (52) is provided for supplying nitrogen gas into the drying gas producing means (41), and a heater (44) is disposed within the drying gas producing means to produce a drying gas. As a result of this, the amount of the IPA supplied to the drying gas producing means (41) by the diaphragm pump (50) is controllable, thus enabling the concentration of the IPA contained in the drying gas to be maintained at a value within a range of from 3% to 80%, inclusive, and enabling the temperature of the drying gas to be maintained at a value within a range of from 80.degree. to 150.degree.

Abstract: A substrate transporting and processing system generally comprises: a supply section of a carrier 1 for housing therein wafers W to be processed, in a horizontal state; a discharge section of the carrier 1; a wafer unloading arm 14 for unloading the wafers W from said carrier 1; a wafer loading arm 16 for loading the wafers W into the carrier 1; an attitude changing unit 40 for changing the attitude of the wafers W between a horizontal state and a vertical state; a processing section 3 for suitably processing the wafers W; and a wafer transport arm 56 for delivering the wafers W between the attitude changing unit 40 and the processing section 3 and for transporting the wafers W into and from the processing section.

Abstract: Disclosed is an ultrasonic cleaning device including a cleaning tank containing a semiconductor wafer W and pure water, and a plurality of vibrating plates provided with the cleaning tank. The vibrating plates are electric distortion transducers. By controlling the output phases of oscillators that vibrate the plates with a single oscillating source, the output phases of the oscillation sources can be matched. This enables uniform sound pressure distribution. Consequently, ultrasonic interference between vibrating plates can be eliminated. Uniform sound pressure distribution makes it possible to obtain a uniform particle removal rate, thereby improving cleaning efficiency.

Abstract: A method of washing substrates arranged at a substantially equal pitch internal in a cassette which includes steps of (a) transferring the substrates to a holder a pitch interval narrower than the arrangement pitch interval in said cassette; (b) supplying a washing solution into a processing bath; (c) conveying the holder holding the substrates into the processing bath; (d) dipping the substrates in the washing solution in the processing bath to wash the substrates; and (e) supplying a rinse solution into the processing bath to substitute the washing solution with the rinse solution to rinse the substrates in the processing bath.

Abstract: A substrate washing apparatus includes a bath, a washing solution supply source, a first path for allowing the washing solution overflowing from the bath, a rinse solution supply source, a second path for passing the rinse solution, a common path communicating with the first and second paths and also with a bottom of the bath, a first valve, a second valve, a discharge path branched from the first path, and a control section, wherein the first valve includes a first body for opening/closing the first path, a third path arranged parallel to the first path and having a diameter smaller than a diameter of the first path, and a second body for opening/closing the third path, so that the first body is opened and the second body is closed, to allow the washing solution to flow into the bath, and on the other hand, the first body is closed, the second body is opened, to allow the rinse solution to flow into the bath, and the washing solution remaining in the first and third paths is discharged together with the rins

Abstract: A chemical cleaning section of a semiconductor wafer cleaning system has a processing vessel. Two cleaning liquid supplying ports are formed in a bottom portion of the vessel. A holder for holding a plurality of wafers at intervals is arranged in the vessel. A rectifying plate is arranged between the holder and the supplying ports and a diffusion plate is arranged between the rectifying plate and the supplying ports. Bubble storage members are formed on a lower surface of the rectifying plate, so as to be located just above both side edges of the diffusion plate extending in a direction in which the wafers are aligned. The bubble storages are connected to the outside of the vessel through exhaust holes and exhaust pipes. Bubbles contained in a cleaning liquid supplied through the supplying ports are discharged from the bubble storages through the exhaust pipes to the outside of the vessel. As a result, the wafers are not influenced by the bubbles.