Patents by Inventor Shigenori Ozaki
Shigenori Ozaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20100096707Abstract: In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.Type: ApplicationFiled: December 28, 2009Publication date: April 22, 2010Applicant: TOKYO ELECTRON LIMITEDInventors: Takuya Sugawara, Yoshihide Tada, Genji Nakamura, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasaki, Seiji Matsuyama
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Publication number: 20100048033Abstract: An oxide film-forming apparatus, comprising: a process chamber for disposing an electronic device substrate at a predetermined position; water vapor supply means for supplying water vapor into the process chamber; and plasma exciting means for activating the water vapor with plasma, whereby the surface of the electronic device substrate can be irradiated with the plasma based on the water vapor.Type: ApplicationFiled: November 4, 2009Publication date: February 25, 2010Inventors: Junichi Kitagawa, Shinji Ide, Shigenori Ozaki
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Patent number: 7662236Abstract: In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.Type: GrantFiled: June 25, 2008Date of Patent: February 16, 2010Assignee: Tokyo Electron LimitedInventors: Takuya Sugawara, Yoshihide Tada, Genji Nakamura, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasaki, Seiji Matsuyama
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Patent number: 7655574Abstract: An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.Type: GrantFiled: November 30, 2005Date of Patent: February 2, 2010Assignee: Tokyo Electron LimitedInventors: Takuya Sugawara, Yoshihide Tada, Genji Nakamura, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasaki, Seiji Matsuyama, Kazuhide Hasebe, Shigeru Nakajima, Tomonori Fujiwara
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Patent number: 7632758Abstract: An oxide film-forming apparatus, comprising: a process chamber for disposing an electronic device substrate at a predetermined position; water vapor supply means for supplying water vapor into the process chamber; and plasma exciting means for activating the water vapor with plasma, whereby the surface of the electronic device substrate can be irradiated with the plasma based on the water vapor.Type: GrantFiled: August 24, 2006Date of Patent: December 15, 2009Assignee: Tokyo Electron LimitedInventors: Junichi Kitagawa, Shinji Ide, Shigenori Ozaki
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Patent number: 7622402Abstract: The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.Type: GrantFiled: March 31, 2003Date of Patent: November 24, 2009Assignee: Tokyo Electron LimitedInventors: Takuya Sugawara, Yoshihide Tada, Genji Nakamura, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasaki, Seiji Matsuyama, Kazuhide Hasebe, Shigeru Nakajima, Tomonori Fujiwara
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Patent number: 7560396Abstract: An electronic device material comprising at least an electronic device substrate and a silicon oxynitride film disposed on the substrate is provided. The silicon oxynitride film is characterized by containing nitrogen atoms in a large amount in the vicinity of the oxynitride film surface when the nitrogen content distribution in the thickness direction of the silicon oxynitride film is examined by SIMS (secondary ion mass spectrometry) analysis. By virtue of this constitution, an electronic device material comprising an oxynitride film having an excellent effect of preventing penetration of boron and having excellent gate leak properties can be obtained.Type: GrantFiled: March 31, 2003Date of Patent: July 14, 2009Assignee: Tokyo Electron LimitedInventors: Takuya Sugawara, Shigenori Ozaki, Masaru Sasaki
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Publication number: 20090072327Abstract: [Problems] To provide a semiconductor storage device with excellent electrical characteristics (write/erase characteristics) by means of favorable nitrogen concentration profile of a gate insulating film, and to provide a method for manufacturing such a device. [Means for Solving Problems] a semiconductor device fabricating method according to a first aspect of the invention, a method for fabricating a semiconductor storage device that operates by transferring charges through a gate insulating film formed between a semiconductor substrate and a gate electrode, includes a step for introducing an oxynitriding species previously diluted by plasma excitation gas, into a plasma processing apparatus, generating an oxynitriding species by means of a plasma, and forming an oxynitride film on the semiconductor substrate as the gate insulating film. The oxynitriding species contains NO gas at a ratio of 0.00001 to 0.01% to the total volume of gas introduced into the plasma processing apparatus.Type: ApplicationFiled: September 30, 2005Publication date: March 19, 2009Applicants: TOKYO ELECTRON LIMITED, TOHOKU UNIVERSITYInventors: Junichi Kitagawa, Shigenori Ozaki, Akinobu Teramoto, Tadahiro Ohmi
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Publication number: 20090035950Abstract: A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a planar antenna.Type: ApplicationFiled: August 29, 2008Publication date: February 5, 2009Applicant: TOKYO ELECTRON LIMITEDInventors: Seijii Matsuyama, Takuya Sugawara, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasaki
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Publication number: 20080274370Abstract: In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.Type: ApplicationFiled: June 25, 2008Publication date: November 6, 2008Applicant: TOKYO ELECTRON LIMITEDInventors: Takuya Sugawara, Yoshihide Tada, Genji Nakamura, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasaki, Seiji Matsuyama
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Patent number: 7446052Abstract: In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.Type: GrantFiled: March 31, 2003Date of Patent: November 4, 2008Assignee: Tokyo Electron LimitedInventors: Takuya Sugawara, Yoshihide Tada, Genji Nakamura, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasakii, Seiji Matsuyama
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Patent number: 7429539Abstract: A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a planar antenna.Type: GrantFiled: December 26, 2006Date of Patent: September 30, 2008Assignee: Tokyo Electron LimitedInventors: Seiji Matsuyama, Takuya Sugawara, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasaki
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Publication number: 20070224837Abstract: A process for producing electronic device (for example, high-performance MOS-type semiconductor device) structure having a good electric characteristic, wherein an SiO2 film or SiON film is used as an insulating film having an extremely thin (2.5 nm or less, for example) film thickness, and poly-silicon, amorphous-silicon, or SiGe is used as an electrode. In the presence of process gas comprising oxygen and an inert gas, plasma including oxygen and the inert gas (or plasma comprising nitrogen and an inert gas, or plasma comprising nitrogen, an inert gas and hydrogen) is generated by irradiating a wafer W including Si as a main component with microwave via a plane antenna member SPA. An oxide film (or oxynitride film) is formed on the wafer surface by using the thus generated plasma, and as desired, an electrode of poly-silicon, amorphous-silicon, or SiGe is formed, to thereby form an electronic device structure.Type: ApplicationFiled: January 26, 2007Publication date: September 27, 2007Applicant: TOKYO ELECTRON LIMITEDInventors: Takuya Sugawara, Toshio Nakanishi, Shigenori Ozaki, Seiji Matsuyama, Shigemi Murakawa, Yoshihide Tada
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Publication number: 20070218687Abstract: A process for producing an electronic device material of a high quality MOS-type semiconductor comprising an insulating layer and a semiconductor layer excellent in the electrical characteristic. The process includes: a step of CVD-treating a substrate to be processed comprising single-crystal silicon as a main component, to thereby form an insulating layer; and a step of exposing the substrate to be processed to a plasma which has been generated from a process gas on the basis of microwave irradiation via a plane antenna member having a plurality of slots, to thereby modify the insulating film by using the thus generated plasma.Type: ApplicationFiled: May 9, 2007Publication date: September 20, 2007Applicant: Tokyo Electron LimitedInventors: Takuya Sugawara, Toshio Nakanishi, Shigenori Ozaki, Seiji Matsuyama, Shigemi Murakawa, Yoshihide Tada
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Publication number: 20070163617Abstract: In a substrate processing apparatus for performing a plasma process on a substrate including a tungsten-containing film, cleaning is performed for a process chamber. This cleaning includes, after the plasma process, supplying a gas containing O2 into the process chamber without setting the process chamber opened to the atmosphere, and generating plasma of the gas to clean the process chamber.Type: ApplicationFiled: February 17, 2005Publication date: July 19, 2007Applicant: TOKYO ELECTRON LIMITEDInventors: Shigenori Ozaki, Hideyuki Noguchi, Yoshiro Kabe, Kazuhiro Isa, Masaru Sasaki
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Patent number: 7232772Abstract: A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a planar antenna.Type: GrantFiled: November 16, 2004Date of Patent: June 19, 2007Assignee: Tokyo Electron LimitedInventors: Seiji Matsuyama, Takuya Sugawara, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasaki
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Publication number: 20070134895Abstract: A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a planar antenna.Type: ApplicationFiled: December 26, 2006Publication date: June 14, 2007Applicant: TOKYO ELECTRON LIMITEDInventors: Seijii Matsuyama, Takuya Sugawara, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasaki
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Publication number: 20070128880Abstract: An oxide film-forming apparatus, comprising: a process chamber for disposing an electronic device substrate at a predetermined position; water vapor supply means for supplying water vapor into the process chamber; and plasma exciting means for activating the water vapor with plasma, whereby the surface of the electronic device substrate can be irradiated with the plasma based on the water vapor.Type: ApplicationFiled: August 24, 2006Publication date: June 7, 2007Inventors: Junichi Kitagawa, Shinji Ide, Shigenori Ozaki
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Patent number: 7226874Abstract: A substrate processing method forming an oxynitride film by nitriding an oxide film formed on a silicon substrate includes a nitridation processing step that nitrides a surface of the oxide film by radicals or ions formed by exciting a nitrogen gas by microwave-excited plasma, the nitridation processing is conducted at a substrate temperature of 500° C. or less by setting an electron temperature of the microwave-excited plasma to 2 eV or less, and by setting the resident time of oxygen in the processing space in which the substrate to be processed is held, to two seconds or less.Type: GrantFiled: November 12, 2004Date of Patent: June 5, 2007Assignee: Tokyo Electron LimitedInventors: Seiji Matsuyama, Takuya Sugawara, Shigenori Ozaki, Toshio Nakanishi, Masaru Sasaki
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Publication number: 20070111528Abstract: A method of cleaning a semiconductor substrate conductive layer surface that can remove a residual organic material and a natural oxide satisfactorily and does not adversely affect a k value without damaging the side-wall insulation film of a via hole. A semiconductor device, including insulation films formed on the surface of a conductive layer of a semiconductor substrate and a via hole formed in an insulation film to partly expose the conductive layer, is carried into a reaction vessel, plasma including hydrogen is generated in the reaction vessel to clean the surface of the conductive layer at the bottom of the via hole, a residual organic material is decomposed and removed by ashing, and a copper oxide film on the surface of the conductive layer is reduced to Cu.Type: ApplicationFiled: December 3, 2004Publication date: May 17, 2007Applicant: TOKYO ELECTON LIMITEDInventors: Masaru Sasaki, Shinji Ide, Shigenori Ozaki