Abstract: A process for producing an electronic device material of a high quality MOS-type semiconductor having an insulating layer and a semiconducting layer. The process includes a step of CVD-treating a substrate to be processed having single-crystal silicon as a main component to thereby form an insulating layer, and a step of exposing the substrate to be processed to a plasma which has been generated from a process gas on the basis of microwave irradiation via a plane antenna member having a plurality of slots to thereby modify the insulating film by using the thus generated plasma.

Abstract: According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply of the microwave, ion bombardment is reduced in accordance with a decrease in electron temperature, and a diffusion velocity of nitride species in the oxide film lowers, which as a result makes it possible to prevent nitrogen from concentrating in a substrate-side interface of an oxynitride film to increase the nitrogen concentration therein. Consequently, it is possible to improve quality of the oxynitride film, resulting in a reduced leakage current, an improved operating speed, and improved NBTI resistance.

Abstract: An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving deterioration in the characteristic of the insulating film due to carbon, a suboxide, a dangling bond or the like contained in the insulating film.

Abstract: An electronic device material comprising at least an electronic device substrate and a silicon oxynitride film disposed on the substrate is provided. The silicon oxynitride film is characterized by containing nitrogen atoms in a large amount in the vicinity of the oxynitride film surface when the nitrogen content distribution in the thickness direction of the silicon oxynitride film is examined by SIMS (secondary ion mass spectrometry) analysis. By virtue of this constitution, an electronic device material comprising an oxynitride film having an excellent effect of preventing penetration of boron and having excellent gate leak properties can be obtained.

Abstract: A substrate processing method includes a first step of exposing a silicon substrate surface to mixed gas plasma of an inert gas and hydrogen, and a second step of conducting any of oxidation processing, nitridation processing and oxynitridation processing to said silicon substrate surface by plasma processing after said first step, wherein an organic substance remaining on said substrate surface is removed in said first step.

Abstract: A process for producing electronic device (for example, high-performance MOS-type semiconductor device) structure having a good electric characteristic, wherein an SiO2 film or SiON film is used as an insulating film having an extremely thin (2.5 nm or less, for example) film thickness, and poly-silicon, amorphous-silicon, or SiGe is used as an electrode. In the presence of process gas comprising oxygen and an inert gas, plasma including oxygen and the inert gas (or plasma comprising nitrogen and an inert gas, or plasma comprising nitrogen, an inert gas and hydrogen) it generated by irradiating a wafer W including Si as a main component with microwave via a plane antenna member SPA. An oxide film (or oxynitride film) is formed on the wafer surface by using the thus generated plasma, and as desired, an electrode of poly-silicon, amorphous-silicon, or SiGe is formed, to thereby form an electronic device structure.

Abstract: According to the present invention, when nitridation processing or oxidation processing is applied to a surface of a substrate, a partition plate having openings is disposed between a plasma generating part and the substrate, and electron density on the surface of the substrate is controlled to be 1e+7 (electrons/cm3) to 5e+9 (electrons/cm3). According to the present invention, deterioration of the substrate and a nitride film is effectively suppressed.

Abstract: A process for producing an electronic device material of a high quality MOS-type semiconductor comprising an insulating layer and a semiconductor layer excellent in the electrical characteristic. The process includes: a step of CVD-treating a substrate to be processed comprising single-crystal silicon as a main component, to thereby form an insulating layer; and a step of exposing the substrate to be processed to a plasma which has been generated from a process gas on the basis of microwave irradiation via a plane antenna member having a plurality of slots, to thereby modify the insulating film by using the thus generated plasma.

Abstract: A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a planar antenna.

Abstract: In a process involving the formation of an insulating film on a substrate for an electronic device, the insulating film is formed on the substrate surface by carrying out two or more steps for regulating the characteristic of the insulating film involved in the process under the same operation principle. The formation of an insulating film having a high level of cleanness can be realized by carrying out treatment such as cleaning, oxidation, nitriding, and a film thickness reduction while avoiding exposure to the air. Further, carrying out various steps regarding the formation of an insulating film under the same operation principle can realize simplification of the form of an apparatus and can form an insulating film having excellent property with a high efficiency.

Abstract: A substrate processing method forming an oxynitride film by nitriding an oxide film formed on a silicon substrate includes a nitridation processing step that nitrides a surface of the oxide film by radicals or ions formed by exciting a nitrogen gas by microwave-excited plasma, the nitridation processing is conducted at a substrate temperature of 500° C. or less by setting an electron temperature of the microwave-excited plasma to 2 eV or less, and by setting the resident time of oxygen in the processing space in which the substrate to be processed is held, to two seconds or less.

Abstract: A process for producing an electronic device material of a high quality MOS-type semiconductor having an insulating layer and a semiconductor layer with excellent electrical characteristics. A substrate incorporating single-crystal silicon as a main component is CVD-treated to form an insulating layer. The substrate is then exposed to a plasma generated from a process gas by microwave radiation from a plane antenna having a plurality of slots, to thereby modify the insulating film.

Abstract: An oxide film-forming apparatus, comprising: a process chamber for disposing an electronic device substrate at a predetermined position; water vapor supply means for supplying water vapor into the process chamber; and plasma exciting means for activating the water vapor with plasma, whereby the surface of the electronic device substrate can be irradiated with the plasma based on the water vapor.

Abstract: A hole which is to be a part of an interconnection (wiring) hole (21) is formed penetrating through a second insulating layer (13) and a third insulating layer (14) made of porous silicon oxide film, by etching. Further, a second groove (23) is formed on the third insulating layer (14) using a second stopper film (20), by etching. Further, direct nitriding of a silicon oxide film applying an RLSA plasma processing deice is carried out on the side wall of the interconnection hole (21) and the second groove (23), and a barrier layer (25) made of SiN film is formed. Here, the second stopper film (20) and the barrier layer (25) are formed by the same direct nitriding.

Abstract: A microwave plasma substrate processing apparatus is formed of a processing vessel defining a process space in which a plasma processing is conducted, a stage provided in the process space for supporting the substrate to be processed, an evacuation passage formed between the processing vessel and the stage so as to surround the stage, an evacuation system connected to the processing vessel for evacuating the process space via the evacuation passage, a process gas supplying system for introducing a process gas into the process space, a microwave window provided so as to face the substrate to be processed on the stage and formed of a dielectric material and extending substantially parallel to the substrate to be processed, the microwave window forming a part of an outer wall of the processing vessel, and a microwave antenna coupled to the microwave window, wherein at least a part of the processing vessel is covered with an insulation layer.

Abstract: A process for producing electronic device (for example, high-performance MOS-type semiconductor device) structure having a good electric characteristic, wherein an SiO2 film or SiON film is used as an insulating film having an extremely thin (2.5 nm or less, for example) film thickness, and poly-silicon, amorphous-silicon, or SiGe is used as an electrode. In the presence of process gas comprising oxygen and an inert gas, plasma including oxygen and the inert gas (or plasma comprising nitrogen and an inert gas, or plasma comprising nitrogen, an inert gas and hydrogen) is generated by irradiating a wafer W including Si as a main component with microwave via a plane antenna member SPA. An oxide film (or oxynitride film) is formed on the wafer surface by using the thus generated plasma, and as desired, an electrode of poly-silicon, amorphous-silicon, or SiGe is formed, to thereby form an electronic device structure.

Abstract: A process for producing an electronic device material of a high quality MOS-type semiconductor comprising an insulating layer and a semiconductor layer excellent in the electrical characteristic. The process includes: a step of CVD-treating a substrate to be processed comprising single-crystal silicon as a main component, to thereby form an insulating layer; and a step of exposing the substrate to be processed to a plasma which has been generated from a process gas on the basis of microwave irradiation via a plane antenna member having a plurality of slots, to thereby modify the insulating film by using the thus generated plasma.