Abstract: A HEMT has an InAlAs layer (202), an InGaAs layer (203), a multiple &dgr;-doped InAlAs layer (204) composed of n-type doped layers (204a) and undoped layers (204b) which are alternately stacked, an InP layer (205), a Schottky gate electrode (210), a source electrode (209a), and a drain electrode (209b) on an InP substrate (201). When a current flows in a region (channel region) of the InGaAs layer (203) adjacent the interface between the InGaAs layer (203) and the multiple &dgr;-doped InAlAs layer (204), a breakdown voltage in the OFF state can be increased, while resistance to the movement of carriers passing through the multiple &dgr;-doped InAlAs layer (204) as a carrier supplying layer is reduced.

Abstract: The semiconductor device of the present invention includes: particles or interface states for passing charge formed on a p-type silicon substrate via a barrier layer; and particles for holding charge formed above the charge-passing particles via another barrier layer. The charge-holding particles are different from the charge-passing particles in parameters such as the particle diameter, the capacitance, the electron affinity, and the sum of electron affinity and forbidden bandwidth, to attain swift charge injection and release as well as stable charge holding in the charge-holding particles.

Abstract: The semiconductor device of the present invention includes: particles or interface states for passing charge formed on a p-type silicon substrate via a barrier layer; and particles for holding charge formed above the charge-passing particles via another barrier layer. The charge-holding particles are different from the charge-passing particles in parameters such as the particle diameter, the capacitance, the electron affinity, and the sum of electron affinity and forbidden bandwidth, to attain swift charge injection and release as well as stable charge holding in the charge-holding particles.

Abstract: The present invention provides aligned fine particles that are aligned on a substrate. An organic coating film is bonded to surfaces of the fine particles is formed on the surfaces of the fine particles. An organic coating film bonded to a surface of the substrate is formed on the surface of the substrate. The organic coating film on the surfaces of the fine particles is bonded to the organic coating film on the surface of the substrate, whereby the fine particles are immobilized and aligned on the substrate. Thus, it is possible to align the fine particles of a nanometer scale in a specific direction. When fine magnetic particles are used, a magnetic recording medium for high recording density can be obtained, and a high-density magnetic recording/reproducing apparatus can be provided.

Abstract: A semiconductor light-emitting device has first and second semiconductor layers each of a first conductivity type, a third semiconductor layer of a second conductivity type provided between the first and second semiconductor layers, and an active layer provided between the second and third semiconductor layers to emit light with charge injected therein from the second and third semiconductor layers. A graded composition layer is provided between the active layer and the third semiconductor layer to have a varying composition which is nearly equal to the composition of the active layer at the interface with the active layer and to the composition of the third semiconductor layer at the interface with the third semiconductor layer.

Abstract: The light-emitting diode device of the present invention includes an active layer, a p-type contact layer, a Schottky electrode and an ohmic electrode. The active layer is formed over an n-type semiconductor substrate. The contact layer is formed over the active layer. The Schottky electrode is selectively formed on the contact layer and makes Schottky contact with the contact layer. The ohmic electrode is formed to surround the Schottky electrode on the contact layer and to be electrically connected to the Schottky electrode and transmits the light emitted from the active layer.

Abstract: On a substrate of n-type GaAs, an n-type cladding layer of n-type Zn.sub.0.9 Mg.sub.0.1 S.sub.0.13 Se.sub.0.87, an n-type light guiding layer of n-type ZnS.sub.0.06 Se.sub.0.94, an active layer of ZnCdSe and a p-type light guiding layer of p-type ZnS.sub.0.06 Se.sub.0.94 are successively formed. On the p-type light guiding layer, a p-type contact structure is formed. The p-type contact structure includes a first layer of p-type ZnS.sub.0.31 Se.sub.0.54 Te.sub.0.15, a second layer of ZnS.sub.0.47 Se.sub.0.28 Te.sub.0.25, a third layer of p-type ZnS.sub.0.65 Te.sub.0.35, a fourth layer of p-type ZnS.sub.0.5 Te.sub.0.5 and a fifth layer of p-type ZnTe.

Abstract: A vertical cavity type semiconductor light emitting device includes: a light emitting layer made of a II-IV group compound semiconductor material; a first II-VI group compound semiconductor layer which has an opening at a position corresponding to the inside of the light emitting layer; and an upper mirror and a lower mirror which are provided so as to interpose the light emitting layer therebetween. A current is injected through the opening into the light emitting layer.

Abstract: In a II-VI group semiconductor laser, on an n type GaAs substrate, an n type ZnSe layer, a multiquantum well layer of a ZnCdSe well layer and a ZnSe barrier layer, and a p type ZnSe layer are deposited in this order. A polycrystalline ZnO layer is provided on both sides of the p type ZnSe layer for constricting current. Multifilm reflecting mirrors, respectively constituted with a polycrystalline SiO.sub.2 layer and a polycrystalline TiO.sub.2 layer, for obtaining laser oscillation are provided on the p type ZnSe layer as well as on a surface of the n type ZnSe layer exposed by etching the GaAs substrate. Furthermore, a p type AuPd electrode and an n type AuGeNi electrode are respectively provided.

Abstract: Ions are implanted to the n-type or p-type semiconductor layers of a semiconductor element, which includes a semiconductor having a multilayer structure on a substrate, a metal electrode on one entire surface of the semiconductor and a metal section partially formed on the metal electrode, in an amount from 10.sup.12 ions/cm.sup.2 to 10.sup.18 ions/cm.sup.2, thus forming an insulating layer in the n-type or p-type semiconductor layers.