Abstract: A phosphor layer composition, phosphor member, light source device, and projection device are provided that are capable of restraining reflection or scattering at interfaces between phosphor particles and a binder to improve the excitation-light absorption by, and the external quantum efficiency of, the phosphor particles. The present invention, in an aspect thereof, is directed to a phosphor layer composition including: phosphor particles 111 absorbing excitation light and emitting prescribed fluorescence; and a binder 112 composed of a translucent gel containing a metal alkoxide or a mixture of a metal alkoxide and a metal oxide, wherein the phosphor particles 111 are dispersed in the binder 112, and the phosphor particles 111 and the binder 112 differ in refractive index by 0.3 or less.

Abstract: A display device is provided with a light-emitting element layer including an anode electrode, a cathode electrode, and a quantum dot light-emitting layer sandwiched between the anode electrode and the cathode electrode, wherein the quantum dot light-emitting layer includes at least quantum dots and nanofibers. A method for manufacturing a display device includes forming a quantum dot light-emitting layer by applying a colloidal solution including at least quantum dots and nanofibers by ink-jet.

Abstract: A light source device that radiates excitation light or emitted light by the excitation light, includes: an excitation light source that radiates the excitation light; a fluorescent wheel that includes a phosphor, which emits light in a predetermined wavelength range on reception of the excitation light, in a circumferential direction; a driving device that rotates the fluorescent wheel; and a shielding member that is arranged around the excitation light source and the fluorescent wheel and shields the excitation light and the emitted light, wherein an opening through which outside air is introduced is provided at a part of the shielding member.

Abstract: A phosphor layer composition, phosphor member, light source device, and projection device are provided that are capable of restraining reflection or scattering at interfaces between phosphor particles and a binder to improve the excitation-light absorption by, and the external quantum efficiency of, the phosphor particles. The present invention, in an aspect thereof, is directed to a phosphor layer composition including: phosphor particles 111 absorbing excitation light and emitting prescribed fluorescence; and a binder 112 composed of a translucent gel containing a metal alkoxide or a mixture of a metal alkoxide and a metal oxide, wherein the phosphor particles 111 are dispersed in the binder 112, and the phosphor particles 111 and the binder 112 differ in refractive index by 0.3 or less.

Abstract: A liquid crystal composition contains liquid crystal molecules. The liquid crystal molecules include 17 mol % or more of first liquid crystal molecules represented by the following formula with respect to the whole liquid crystal molecules: R1—R2x—R3—R4y—R5??(A) (where R1 and R5 are linear alkyl groups containing 1 to 8 carbon atoms; R2 and R4 are trans-1,4-cyclohexylene groups or 1,4-phenylene groups; R3 is a trans-1,4-cyclohexylene group, a 1,4-phenylene group, a 2,3-difluoro-trans-1,4-cyclohexylene group, a 2,3-difluoro-1,4-phenylene group, a 2,3-dichloro-trans-1,4-cyclohexylene group, or a 2,3-dichloro-1,4-phenylene group; x is an integer of 0 to 3; and y is an integer of 0 to 3).

Abstract: A compound represented by the following general formula (1): where R1 is a hydrogen atom, a fluorine atom, an alkyl group, an alkoxy group, a fluorinated alkyl group, a cyano group, or a triphenylsilyl group, plural R1 moieties may be the same as or different from one another and only any one of the plural R1 moieties is a cyano group, R2 is a hydrogen atom, a fluorine atom, an alkyl group, an alkoxy group, or a fluorinated alkyl group, plural R2 moieties may be the same as or different from one another, and at least one of the R2 moieties is a fluorinated alkyl group, R3 is a hydrogen atom, a fluorine atom, an alkyl group, an alkoxy group, a phenyl group, a carbazole group, a diphenylamino group, or a triphenylsilyl group, and plural R3 moieties may be the same as or different from one another.

Abstract: A photosensitive resin composition includes a positive photosensitive resin having a photosensitive moiety that cleaves upon exposure to light, and a wavelength conversion material dispersed in the photosensitive resin. The photosensitive resin and the wavelength conversion material meet (i) to (iv): (i) The photosensitive moiety and the cleavage product of the photosensitive resin do not neutralize the wavelength conversion material; (ii) The photosensitive moiety and the cleavage product do not induce hydrolysis of the wavelength conversion material; (iii) The HOMOs of the photosensitive moiety and the cleavage product are lower than the LUMO of the wavelength conversion material; and (iv) The LUMOs of the photosensitive moiety and the cleavage product are higher than the HOMO of the wavelength conversion material. (Any combination of a chemically amplified photosensitive resin with an acidic photosensitive moiety or cleavage product and an acidic wavelength conversion material is excluded.

Abstract: A CCM substrate (1) includes as a light-emitting layer on a substrate (11) a red conversion layer (142), a green conversion layer (152), and a light scattering layer (162); a bank (13) which stands on the substrate (11), and partitions the light-emitting layer; and a light-transmission suppressing layer (10) which is formed on at least a portion of a side surface (13a) of the bank (13) which is a surface facing the light-emitting layer, and suppresses light transmission between the light-emitting layers (the red conversion layer (142), the green conversion layer (152), and the light scattering layer (162)) with the bank (13) interposed therebetween by causing the light to be reflected or scattered, in which the light-transmission suppressing layer (10) is comprising metal or metal salt, and the bank (13) has a group, an ion, or a molecule for immobilizing the metal or metal ion.

Abstract: A photosensitive resin composition includes a positive photosensitive resin having a photosensitive moiety that cleaves upon exposure to light, and a wavelength conversion material dispersed in the photosensitive resin. The photosensitive resin and the wavelength conversion material meet (i) to (iv): (i) The photosensitive moiety and the cleavage product of the photosensitive resin do not neutralize the wavelength conversion material; (ii) The photosensitive moiety and the cleavage product do not induce hydrolysis of the wavelength conversion material; (iii) The HOMOs of the photosensitive moiety and the cleavage product are lower than the LUMO of the wavelength conversion material; and (iv) The LUMOs of the photosensitive moiety and the cleavage product are higher than the HOMO of the wavelength conversion material. (Any combination of a chemically amplified photosensitive resin with an acidic photosensitive moiety or cleavage product and an acidic wavelength conversion material is excluded.

Abstract: A CCM substrate (1) includes as a light-emitting layer on a substrate (11) a red conversion layer (142), a green conversion layer (152), and a light scattering layer (162); a bank (13) which stands on the substrate (11), and partitions the light-emitting layer; and a light-transmission suppressing layer (10) which is formed on at least a portion of a side surface (13a) of the bank (13) which is a surface facing the light-emitting layer, and suppresses light transmission between the light-emitting layers (the red conversion layer (142), the green conversion layer (152), and the light scattering layer (162)) with the bank (13) interposed therebetween by causing the light to be reflected or scattered, in which the light-transmission suppressing layer (10) is comprising metal or metal salt, and the bank (13) has a group, an ion, or a molecule for immobilizing the metal or metal ion.

Abstract: The present invention relates to a heat-transfer device and has an object to provide a heat-transfer device that has a high degree of freedom of aspects in arrangement with respect to the heating element. The heat-transfer device is provided with a contact surface 20e coming into contact with a heating element 100. The heat-transfer device has a pin portion 20 transferring heat from the heating element 100 through the contact surface 20e, and has a gelled latent heat storage material 70 arranged to be in contact with the pin portion 20.

Abstract: An object of the present invention is to facilitate reduction in channel length and increase in channel width in an organic semiconductor device and to improve yield. According to an embodiment of the present invention, an organic semiconductor device includes a laminate provided in a first region of a substrate and including a first electrode, a first organic semiconductor film, and a second electrode which are laminated with each other, the first organic semiconductor film being placed between the first electrode and the second electrode; a first wiring portion provided in a second region adjacent to a portion of the periphery of the first region so as to be electrically connected to the first electrode; a second wiring portion provided in the second region so as to be electrically connected to the second electrode; a gate electrode which surrounds a portion of the periphery of the first region; and a gate insulating film provided at least between the laminate and the gate electrode.

Abstract: A display device includes: a plurality of stripe-shaped data electrodes that are formed on a first substrate and that extend in the column direction; a plurality of scanning lines and a plurality of reference signal lines that are formed on a second substrate and that extend in the row direction; a plurality of pixel electrodes that are formed on the second substrate and that are disposed in a matrix arrangement; a plurality of switching elements that are formed on the second substrate and in which on/off is controlled by the plurality of scanning lines, and that are disposed between the plurality of reference signal lines and the plurality of pixel electrodes; and an oxide semiconductor layer that is disposed between a source electrode and a drain electrode. The switching elements are formed so as to be disposed in the vicinity of a gate electrode on the oxide semiconductor layer, with an insulating layer interposed therebetween.

Abstract: An organic thin-film transistor of the present invention has a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor layer provided above a substrate, and further has a thiol compound layer composed of a benzenethiol compound and provided on a surface of the source electrode and a thiol compound layer composed of a benzenethiol compound and provided on a surface of the drain electrode. This makes it possible to provide an organic thin-film transistor whose threshold voltage can be selectively controlled without greatly affecting a current characteristic other than the threshold voltage.

Abstract: An organic transistor (1) includes: an injection improvement layer (40) between a source electrode (14) and an organic semiconductor layer (16); and an extraction improvement layer (50) between a drain electrode (15) and the organic semiconductor layer (16). An electric dipole moment of a material or molecules of the extraction improvement layer (50) has an absolute value lager than that of the injection improvement layer (40). Accordingly, all carriers in the organic semiconductor, which are injected from the source electrode during operation of the transistor, can be drawn out (extracted) into the drain electrode. This reduce contact resistances. Therefore, provided are the organic transistor that reduces a contact resistance between the organic semiconductor layer and the source electrode and a contact resistance between the organic semiconductor layer and the drain electrode and attains to demonstrate stable operation, and a method for fabricating the organic transistor.

Abstract: A semiconductor device (1a) which is constituted by organic semiconductors with excellent transistor characteristics and includes: a p-type organic transistor (P1) having a gate electrode (12), a source electrode (14), a drain electrode (15), and a p-type organic semiconductor layer (16); an n-type organic transistor (N1) electrically connected with the p-type organic transistor (P1) and having a gate electrode (22), a source electrode (24), a drain electrode (25), and an n-type organic semiconductor layer (26); first layers for enhancing electric charge transfer, one of the first layers being provided between the source electrode (14) and the organic semiconductor layer (16), the other of the first layers being provided between the drain electrode (25) and the organic semiconductor (26); and second layers for enhancing electric charge transfer and made from a different material from that of the first layers, one of the second layers being provided between the drain electrode (15) and the organic semiconducto

Abstract: A compound of the present invention is represented by the following formula (1): (where: R1 and R2 represent, independently, a substitutable C1 to C20 aliphatic hydrocarbon group; and R3 through R14 represent, independently, one of a hydrogen atom, a halogen atom, a substitutable aliphatic hydrocarbon group, and a substitutable aromatic hydrocarbon group). It is therefore possible to provide a novel compound which can be used as an organic semiconductor material.

Abstract: An organic thin-film transistor (100) includes, on a substrate (1), a gate electrode (2), a gate insulating layer (3), a source electrode (4), and a drain electrode (5). Part of surface of the source electrode (4) is covered by a first organic molecular layer (6a). Part of surface of the drain electrode (5) is covered by a second organic molecular layer (6b). An organic semiconductor layer (7) is formed so as to cover the organic molecular layer (6) (first and second organic molecular layers (6a, 6b)), the source electrode (4), and the drain electrode (5), and get into a channel section (20) which is a gap between the electrodes. Since the organic thin-film transistor (100) has the organic molecular layer (6) covering at least part of surface of each of the source and drain electrodes (4, 5), hole-electron injection efficiency is increased. This makes it possible to obtain large current.

Abstract: An organic transistor comprising: at least a gate electrode and a gate insulating layer formed on the gate electrode, the gate insulating layer including, on a surface of the gate electrode, a stacked molecular film composed of a first organic molecular layer binding in a direction substantially perpendicular to the surface of the gate electrode through a first covalent bond and a second organic molecular layer binding to an unreacted end of the first organic molecular layer through a second covalent bond, wherein the second covalent bond and another second covalent bond adjacent to each other form a hydrogen bond in a direction of a surface perpendicular to a major axis direction of the stacked molecule.

Abstract: A method of forming a copper wiring layer, which includes forming a pattern of copper seed layer on a substrate, and forming a copper wiring pattern on the pattern of copper seed layer by means of electroless plating. At least one component of semiconductor device selected from the group consisting of the gate electrode, the source electrode, the drain electrode, and a wiring connected with at least one of these electrodes is formed by a method comprising forming a pattern of copper seed layer, and forming a copper wiring pattern on the pattern of copper seed layer by means of electroless plating.