Abstract: A semiconductor device having a protective insulating film is disclosed. This semiconductor device includes a semiconductor substrate, and an interconnection pattern provided on said semiconductor substrate and electrically connected with said elements. A silicon-oxy-nitride film is provided on said semiconductor substrate so as to cover said interconnection pattern. The silicon-oxy-nitride film is deposited in accordance with a chemical vapor deposition Method using plasma, using a mixture gas including organic silane and a nitriding gas and has therefore superior step coverage. The silicon-oxy-nitride film has a superior barrier characteristic to moisture coming in from the outside. A semiconductor device superior in reliability such as moisture resistance is thus obtained.

Abstract: A semiconductor integrated circuit device has an interconnection structure in which multilayer aluminum interconnection layers are connected through connection holes. A first aluminum interconnection layer is formed on a main surface of the semiconductor substrate. The first aluminum interconnection layer has a surface layer which includes any of high melting point metal, high melting point metal compound, high melting point metal silicide, or amorphous silicon. An insulating layer is formed on the first aluminum interconnection layer, and has a through hole if formed extending to a surface of the first aluminum interconnection layer. A second aluminum interconnection layer is formed on the insulating layer and is electrically connected to the surface layer of the first aluminum interconnection layer through the through hole. The second aluminum interconnection layer includes a titanium layer, a titanium nitride layer and an aluminum alloy layer.

Abstract: A dispersal signal generating apparatus which removes a dispersal signal effectively and rapidly from an input video signal. A dispersal signal component is first detected from an input reception signal to which only soft clamping processing has been applied, and a cancel signal is generated in accordance with the thus detected dispersal signal component. After the detection of the dispersal signal, processing of removing the dispersal signal is performed by both of a dispersal canceler and a hard clamp circuit.

Abstract: A semiconductor integrated circuit device has an interconnection structure in which multilayer aluminum interconnection layers are connected through a connection hole. A first aluminum interconnection layer is formed on a main surface of said semiconductor substrate. An insulating layer is formed on the first aluminum interconnection layer and has a through hole extending to a surface of the first aluminum interconnection layer. A second aluminum interconnection layer is formed on the insulating layer and is electrically connected to the first aluminum interconnection layer through the through hole. The second aluminum interconnection layer includes a titanium layer, a titanium nitride layer and an aluminum alloy layer. The titanium layer is formed on the insulating layer to be in contact with the surface of the first aluminum interconnection layer through the through hole. The titanium nitride layer is formed on the titanium layer. The aluminum alloy layer is formed on the titanium nitride layer.

Abstract: A semiconductor device having a multilayer interconnection structure includes a tungsten plug buried in a contact hole formed in an interlayer insulating film covering first aluminum interconnection with a first titanium film and a first titanium nitride film interposed therebetween, and second aluminum interconnection formed thereon with a second titanium film and a second titanium nitride film interposed therebetween. According to this structure, remaining particles of an alterated layer of aluminum formed on the surface of the first aluminum interconnection are removed, and the first aluminum interconnection reacts with the first titanium film to form an intermetallic compound, so that mixing of the interface between them is carried out. Coverage of the contact hole is improved by burying the tungsten plug.

Abstract: The present invention is mainly characterized by providing an even surface of an interlayer insulating film for insulating and isolating an upper interconnection and a lower interconnection from each other. A lower interconnection layer is provided on a semiconductor substrate, having a pattern of stepped portions. A silicon type insulating film is provided on the semiconductor substrate so as to cover the lower interconnection layer. A silicon ladder resin film is filled in recessed portions of the surface of the silicon type insulating film for making even the surface of the silicon type insulating film. An upper interconnection layer electrically connected to the lower interconnection layer through a via hole is provided on the silicon type insulating film. The silicon ladder resin film has the structural formula: ##STR1## where R.sub.1 is at least one of a phenyl group and a lower alkyl group, R.sub.2 is at least one of a hydrogen atom and a lower alkyl group, and n is an integer of 20 to 1000.

Abstract: A semiconductor device which includes an electrode portion formed on a wafer; a passivation film deposited on said wafer except for said electrode portion; an insulating film deposited only on said passivation film so as to have a predetermined thickness and so as to include a concave portion over said electrode portion; and conductive material embedded in said concave portion at least up to the height of said insulating film, wherein the conductive material is intended to be used for bonding to a substrate.

Abstract: A semiconductor device having a protective insulating film is disclosed. This semiconductor device includes a semiconductor substrate, and an interconnection pattern provided on said semiconductor substrate and electrically connected with said elements. A silicon-oxy-nitride film is provided on said semiconductor substrate so as to cover said interconnection pattern. The silicon-oxy-nitride film is deposited in accordance with a chemical vapor deposition Method using plasma, using a mixture gas including organic silane and a nitriding gas and has therefore superior step coverage. The silicon-oxy-nitride film has a superior barrier characteristic to moisture coming in from the outside. A semiconductor device superior in reliability such as moisture resistance is thus obtained.

Abstract: In a semiconductor device, an impurity diffused layer serving as an active region is formed in a predetermined region of the surface of a semiconductor substrate of silicon, an underlayer insulating film is formed on the semiconductor substrate for the purpose of protecting and stabilizing the surface of the semiconductor substrate, and an interconnection electrically connected to the impurity diffused layer through a contact hole and formed on an Al-Si-Sn alloy, an Al-Si-Sb alloy or alloys having Ti added to the respective alloys, so that occurrence of an alloy pit and a silicon nodule is prevented. In addition, a completed protective film is formed on the interconnection and the underlayer insulating film and an aperture in a bonding pad region is formed in a predetermined region of the completed protective film, so that the interconnection and the bonding pad are electrically connected to each other.

Abstract: A semiconductor device having a multilayer interconnection structure includes a tungsten plug buried in a contact hole formed in an interlayer insulating film covering first aluminum interconnection with a first titanium film and a first titanium nitride film interposed therebetween, and second aluminum interconnection formed thereon with a second titanium film and a second titanium nitride film interposed therebetween. According to this structure, remaining particles of an alterated layer of aluminum formed on the surface of the first aluminum interconnection are removed, and the first aluminum interconnection reacts with the first titanium film to form an intermetallic compound, so that mixing of the interface between them is carried out. Coverage of the contact hole is improved by burying the tungsten plug.

Abstract: In a method of forming a metallic silicide film on a substrate, a metallic silicide film containing silicon at a concentration higher than stoichiometric, is deposited on a substrate. A film of aluminum or aluminum alloy is then deposited on the metallic silicide film. Subsequently, a heat treatment is conducted to cause precipitation of silicon from the metallic silicide film to the aluminum, thereby to lower the silicon concentration in the silicide film.

Abstract: A thin film-forming apparatus includes a vessel defining a reaction chamber, a stage for holding an object for processing within the reaction chamber, and members for introducing reaction gases into the reaction chamber. The apparatus further has an electrode disposed at the periphery of the object held by the stage for capturing particles which do not contribute to the formation of a thin film on the object, and a power source for applying a direct-current voltage to the electrode. By virtue of this arrangement, the apparatus is capable of preventing adhesion of foreign particles to the object, and is thus capable of forming high-quality films with a high yield.

Abstract: A roofing tile has a platelike but sinuous body which includes an upwardly concave and downwardly convex valley part and an upwardly convex and downwardly concave ridge part, both of which are smoothly, continuously rounded. The valley part and ridge part are located on respective sides of the sinuous body and adjoin one another substantially at the center thereof. A support part located near a first end of the sinuous body projects downwardly from a bottom surface of the valley part and terminates at a downwardly facing bonding surface which is adapted for adhesive bonding directly to a roof. A sidewardly extending wall upstands from a top surface of the sinuous body at the first end thereof, and a sidewardly extending groove is formed in the bottom surface of the valley part adjacent a second end of the sinuous body. The groove is adapted to receive the upstanding wall of another identical roofing tile for adhesive bonding of the wall therein.

Abstract: A semiconductor device comprises a semiconductor substrate containing silicon as a constituent element, an impurity diffused layer formed in a predetermined region of the semiconductor substrate, an underlayer oxide film formed on the surface of the semiconductor substrate, an Al-Si alloy interconnection electrically connected to the impurity diffused layer through a contact hole and formed in a predetermined region on the underlayer insulating film, and an antireflection coating comprising a layer of an Al-Si-Sb alloy or a layer of an Al-Si-Sn alloy formed on the alloy interconnection.

Abstract: A semiconductor device which includes an electrode portion formed on a wafer; a passivation film deposited on said wafer except for said electrode portion; an insulating film deposited only on said passivation film so as to have a predetermined thickness anad so as to include a concave portion over said electrode portion; and conductive material embedded in said concave portion at least up to the height of said insulating film, wherein the conductive material is intended to be used for bonding to a substrate.

Abstract: A single chamber apparatus for chemical vapor deposition of films on semiconductor substrates transported through the chamber. Heaters and a plurality of gas dispersing heads are disposed in the chamber for forming films by chemical vapor deposition. A cooling head is disposed between each adjacent pair of gas dispersing heads for cooling whereby the surface temperature of the substrates opposite the gas dispersing heads is substantially equal to that of the substrates located opposite the cooling heads.

Abstract: An Al layer (6) is first formed to cover an opening region (9) for interconnection in a semiconductor device. Then, an Al-Si-Ti layer (7) having a higher degree of hardness than that of the Al layer (6) is formed on the Al layer (6) and subsequently a mixture layer (8) of aluminum hydrate and aluminum oxide is formed on the surface of the Al-Si-Ti layer (7). Thus, a multilayered film of electrode and interconnection (11) is formed.

Abstract: An apparatus for forming a thin film on a substrate has a first reaction chamber in which a thin film is formed by gaseous discharge and a second reaction chamber in which reactive atoms are generated. The first and second reaction chambers commuicate with one another through an orifice in the first reaction chamber. The first reaction chamber houses a device for generating a film on a substrate, and the second reaction chamber houses a device for generating reactive atoms. The orifice is disposed in the vicinity of both a film-forming region in the first reaction chamber and a reactive atom-generating region in the second reaction chamber so that reactive atoms from the second reaction chamber will pass through the orifice and enter the film-forming region in the first reaction chamber, combine with particles in the film-forming region to form a chemical compound, and accumulate on the substrate.

Abstract: A pebble-stone crushing device for use in an excavator for laying pipelines underground has a plurality of rotor teeth formed integrally with the rear face of a cutter head which is mounted in the most front part of an excavator body to excavate a working face in front thereof, and a plurality of stator teeth formed radially on and integrally with an annular front face plate of said excavator body so as to cooperate with said rotor teeth. The stator teeth comprises plural groups of radially spaced apart tooth members having different length. Further, the tooth members comprises groups of comparatively long main tooth members and groups of comparatively short auxiliary tooth members each being disposed, respectively, between every adjacent two main tooth members.

Abstract: For splitting rock, concrete structures, etc., by being inserted into a drill hole created therein, a rock splitter has a wedge coupled at its thick end to the output shaft of a hydraulic cylinder. Lying on opposite sides of the wedge, a pair of guides are yieldably held against the wedge to allow longitudinal sliding motion thereof. Two pairs of opposed leaf springs connect the wedge guides to the hydraulic cylinder to restrain the guides from longitudinal displacement and to allow same to move away from and toward each other with the longitudinal sliding motion of the wedge. The pair of wedge guides, together with the wedge therebetween, generally taper as they extend away from the hydraulic cylinder for the ease of insertion into the drill hole. Several splitting operations, each with a thrust of the wedge, are to be performed in succession, by inserting the splitter progressively deeper into the drill hole, for fracturing thick rock formations or the like.