Abstract: An endless belt includes a resin and conductive particles, in which a content of the conductive particles with respect to the endless belt is 5% by volume or more and 20% by volume or less in terms of a volume ratio, a Young's modulus of the endless belt is 3,000 MPa or more, and the number of times of bending endurance of the endless belt measured by an MIT test specified in JIS P8115:2001 is 10,000 or more.

Abstract: An endless belt, in which an outer peripheral surface of the endless belt has a coefficient of dynamic friction of 0.85 or less, and in a case where polyester resin particles having a volume-average particle size of 4.7 ?m are caused to adhere to the outer peripheral surface under a load of 0 g/cm2, and then air is sprayed on the outer peripheral surface from above the outer peripheral surface at a spray pressure that keeps increasing, all the polyester resin particles having adhered to the outer peripheral surface are spaced apart from the outer peripheral surface at the spray pressure of 6 kPa or less.

Abstract: A lubricating apparatus of the present invention is applied to a transmission having a plurality of rotating shafts, and includes a first rotating shaft having a first oil passage, a second rotating shaft, and an impeller fixed to an axial end of the first rotating shaft. The impeller is arranged in a first oil storage chamber communicated with an outlet of the first oil passage. The impeller rotates with the first rotating shaft to scatter oil, and supplies the oil to the second rotating shaft.

Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

Abstract: A lubricating apparatus of the present invention is applied to a transmission having a plurality of rotating shafts, and includes a first rotating shaft having a first oil passage, a second rotating shaft, and an impeller fixed to an axial end of the first rotating shaft. The impeller is arranged in a first oil storage chamber communicated with an outlet of the first oil passage. The impeller rotates with the first rotating shaft to scatter oil, and supplies the oil to the second rotating shaft.

Abstract: A lubricating apparatus includes a rotating shaft disposed horizontally; a supporting wall supporting the rotating shaft with a bearing; an oil chamber surrounded by the supporting wall and the rotating shaft; an oil passage extending within the rotating shaft and communicating with lubricating portions; an oil intake portion for receiving and supplying the oil to the oil chamber; and a plurality of guide ribs formed in the supporting wall. The guide ribs are adapted to form at least two oil flow paths from a radially-outer portion of the oil chamber toward a center portion of the chamber.

Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

Abstract: A lubricating apparatus includes a rotating shaft disposed horizontally; a supporting wall supporting the rotating shaft with a bearing; an oil chamber surrounded by the supporting wall and the rotating shaft; an oil passage which extends within the rotating shaft and is communicated with lubricating portions; an oil intake portion for taking and supplying the oil to the oil chamber; and a plurality of guide ribs formed in the supporting wall, wherein the guide ribs are adapted to form at least two oil flow paths from a radially-outer portion of the oil chamber toward a center portion of the chamber.

Abstract: A photoelectric conversion device is disclosed. The photoelectric conversion device includes a semiconductor substrate having a plurality of photoelectric converters, a multilayer wiring structure arranged on the semiconductor substrate, and a planarized layer arranged on the multilayer wiring structure. The multilayer wiring structure includes a first wiring layer, an interlayer insulation film arranged to cover the first wiring layer, and a second wiring layer serving as a top wiring layer arranged on the interlayer insulation film. The planarized layer covers the interlayer insulation film and the second wiring layer. The second wiring layer is thinner than the first wiring layer.

Abstract: A photoelectric conversion device includes photoelectric conversion elements and element isolation regions, both of which are arranged on a semiconductor substrate. The photoelectric conversion device further includes a plurality of interlayer insulation layers including a first interlayer insulation layer arranged nearest to the semiconductor substrate, and a second interlayer insulation layer arranged to cover the first interlayer insulation layer. Gaps extending from at least the second interlayer insulation layer to the first interlayer insulation layer are arranged in first and second interlayer insulation layer regions corresponding to the element isolation regions.

Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

Abstract: A power transmission mechanism having a dog clutch for freely connecting and disconnecting power transmission between a first rotor and a second rotor on a common rotational shaft. The dog clutch has a plurality of dog jaws in one of the rotors and has, in the other rotor, a plurality of recess portions or other dog jaws to which the former dog jaws can be engaged. Tapered surfaces are formed at an end face of each of the former dog jaws in the axial direction and each of wall surface portions formed between the recess portions or an end face of each of the latter dog jaws.

Abstract: A manufacturing method is provided for a photoelectric conversion device in which no plane channeling is produced. The photoelectric conversion device includes a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate that forms an off-angle ? with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5°???4.5°, and an ion injecting direction for forming a semiconductor region constituting the photoelectric conversion element forms an angle ? to a direction perpendicular to the principal plane within a range of 0°<??45°, and further a direction of a projection of the ion injecting direction to the principal plane forms each angle ? with the two plane direction within a range of 0°<?<90°.

Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

Abstract: A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

Abstract: A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other.

Abstract: A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other.

Abstract: A noise generated by a constitution of widening an incident aperture of light of a photoelectric conversion element is reduced. In a manufacturing method of a photoelectric conversion device, first electroconductor arranged in a first hole arranged in the first interlayer insulation layer electrically connects a first semiconductor region to a gate electrode of an amplifying MOS transistor not through wirings included in a wiring layer. Moreover, a second electroconductor electrically connects a second semiconductor region different from the first semiconductor region to a wiring. In a constitution of that second electroconductor, a third electroconductor arranged in a second hole arranged in the first interlayer insulation layer and a fourth electroconductor arranged in a third hole arranged in the second interlayer insulation layer are stacked and electrically connected to each other.

Abstract: A photoelectric-conversion apparatus includes a photoelectric-conversion area where a plurality of photoelectric-conversion elements configured to convert incident light into electrical charges, a plurality of floating-diffusion areas, a plurality of transfer-MOS transistors configured to transfer electrical charges of the photoelectric-conversion element to the floating-diffusion area, and a plurality of amplification-MOS transistors configured to read and transmit a signal generated based on the transferred electrical charges to an output line are provided. An antireflection film is provided on a light-receiving surface of the photoelectric-conversion element. The gate of the amplification-MOS transistor is electrically connected to one floating-diffusion area by providing one conductor in a single contact hole, and the anti-reflection film covers the photoelectric-conversion area except a base part of the contact hole.