Abstract: An X-ray exposure apparatus includes a partition structure for defining therein an ambience of one of an atmospheric pressure and a reduced pressure, for accommodating an X-ray mask and an article to be exposed, an X-ray window provided on the partition structure for spatially isolating the inside of the partition structure and an X-ray source, and having a function for transmitting therethrough an X-ray beam with which the article as placed inside the partition structure can be exposed through the X-ray mask, and a scanning mechanism for scanningly moving the X-ray window in a direction intersecting with an optical axis of the X-ray beam, in a single exposure and without interruption at least from just before the start of the exposure to just after the end of the exposure.

Abstract: An exposure apparatus includes an illumination optical system, a mask stage, a projection optical system, a wafer stage, a shielding member which defines an optical path space between the optical system and stage through which exposure light passes and a space surrounding the optical path space, and a unit which supplies an inert gas to these spaces. When the transmittance in the optical path space changes along with the movement of the stage, the influence of the transmittance on exposure is reduced.

Abstract: This invention shortens a time required to purge, with inert gas, gas in a space (optical path space) through which exposure light passes, such as a space between a projection optical system and a substrate. The exposure apparatus includes a wafer stage (102), a projection optical system (101), and an air supply portion (112) which supplies inert gas at a nonuniform flow velocity to an optical path space (113) through which exposure light passes between the wafer stage (102) and the projection optical system (101). A downward flow of inert gas is formed.

Abstract: This invention shortens a time required to purge, with inert gas, gas in a space (optical path space) through which exposure light passes, such as a space between a projection optical system and a substrate. Shielding members (115) are so arranged as to surround the side planes of an optical path space (113). Inert gas is supplied from a gas supply port (112) to the optical path space (113) to purge gas in the optical path space (113) with the inert gas. The shielding members (115) have passages (116) at portions where the flow of inert gas delays. The passages (116) increase the flow velocity at these portions to shorten the purge time.

Abstract: An exposure apparatus for exposing a photosensitive substrate to a pattern on a mask within an exposure view angle to transfer the pattern onto the photosensitive substrate using X-ray as exposure radiation, wherein exposure light on the mask is limited by a light blocking plate for blocking the exposure radiation, thus accomplishing efficient manufacturing of the semiconductor devices.

Abstract: An exposure apparatus for exposing a photosensitive substrate to a pattern within an exposure view angle on a mask using X-rays to transfer the pattern onto the photosensitive substrate, wherein the exposure view angle is limited by a light blocking plate for blocking the X-rays, and the alignment mark is disposed on a scribe line, thus effectively manufacturing semiconductor devices.

Abstract: An X-ray exposure apparatus includes a partition structure for defining therein an ambience of one of an atmospheric pressure and a reduced pressure, for accommodating an X-ray mask and an article to be exposed, an X-ray window provided on the partition structure for spatially isolating the inside of the partition structure and an X-ray source, and having a function for transmitting therethrough an X-ray beam with which the article as placed inside the partition structure can be exposed through the X-ray mask, and a scanning mechanism for scanningly moving the X-ray window in a direction intersecting with an optical axis of the X-ray beam, in a single exposure and without interruption at least from just before the start of the exposure to just after the end of the exposure.

Abstract: A processing apparatus includes a sealed vacuum chamber which contains a processing portion; a pressure controlling system which keeps the internal pressure of the sealed vacuum chamber constant at a predetermined level by exhausting the ambient gas in the sealed vacuum chamber; and an ambience gas recirculating system which recirculates the ambience gas exhausted from the sealed vacuum chamber back into the sealed vacuum chamber; wherein the ambience gas recirculated by the ambience. gas recirculating system is blown into the sealed vacuum chamber so that a gas flow is generated in a predetermined direction along the processing portion.

Abstract: An X-ray mask structure and X-ray exposure method using the same are disclosed, wherein the mask has an X-ray absorptive material pattern, a supporting film for supporting the pattern, and a holding frame for holding the supporting film, wherein a suction port is arranged to be communicated with an external gas drawing system, and wherein a supply port is provided so that a gas can be supplied therethrough, for prevention of dust adhesion to the mask.

Abstract: An X-ray exposure apparatus includes a partition structure for defining therein an ambience of one of an atmospheric pressure and a reduced pressure, for accommodating an X-ray mask and an article to be exposed, an X-ray window provided on the partition structure for spatially isolating the inside of the partition structure and an X-ray source, and having a function for transmitting therethrough an X-ray beam with which the article as placed inside the partition structure can be exposed through the X-ray mask, and a scanning mechanism for scanningly moving the X-ray window in a direction intersecting with an optical axis of the X-ray beam, in a single exposure and without interruption at least from just before the start of the exposure to just after the end of the exposure.

Abstract: This invention relates to a processing apparatus for processing a sample such as a substrate. The apparatus includes a process chamber having an exposure apparatus for transferring a pattern onto a substrate as a sample in a predetermined atmosphere, a load-lock chamber connected to the process chamber, a transfer mechanism for transferring the substrate between the load-lock chamber and a coater/developer, a clean booth which covers the transfer path of the transfer mechanism, and a transfer atmosphere forming mechanism for flowing a clean gas in the clean booth.

Abstract: An electron beam exposure apparatus for projecting an image formed by electron beams onto a wafer via a reduction electron optical system, irradiates collimated electron beams toward an aperture board having an arcuated aperture sandwiched between two arcs having, as the center, the axis of the reduction electron optical system, and exposes the wafer with electron beams having an arcuated sectional shape that have been transmitted through the aperture.

Abstract: An electron beam exposure apparatus, which illuminates a mask with light emitted by a light source, photoelectrically converts the light patterned by the mask using a photoelectric converter, and exposes an object to be exposed with a patterned electron beam emitted by the photoelectric converter.

Abstract: A deflection mirror is disposed before an X-ray mask so as to reflect an X-ray beam and to project it to the X-ray mask. The X-ray mask is disposed opposed to a wafer with a distance D therebetween, and the X-ray beam reflected by the X-ray mask is projected onto the wafer through a reduction projection optical system. The deflecting mirror is disposed, in an example, at a position satisfying a relation D>L>d/(tan .delta.1+tan .delta.2) where L is the distance from the X-ray mask to an edge of the deflection mirror closer to the path of the X-ray beam reflected by the X-ray mask, d is the width of irradiation of the X-ray beam upon the X-ray mask, and .delta.1 and .delta.2 are incidence angles of the X-ray beam at upper and lower edges of the irradiation width d, respectively, upon the X-ray mask. This assures a compact structure wherein, even when a wafer of a large diameter is used, illumination light to the mask is not intercepted.

Abstract: A radiation window includes a radiation transmitting window material, a supporting frame for gas-tightly supporting an outer periphery of the radiation transmitting window material, a flange for gas-tightly supporting an outer periphery of the supporting frame, and a structure for reducing a stress related to mounting the supporting frame onto the flange.

Abstract: An exposure apparatus for transferring a pattern of a mask onto a substrate, includes a regulating an member for regulating exposure beam from a light source, and an alignment optical system for projecting an alignment beam to an alignment mark of the mask, to perform alignment between the mask and the substrate. The regulating member is arranged to pass the alignment light therethrough. The distance E from the regulating member to the mask satisfies the relationE.gtoreq.(f+m)/2(tan.theta.+tan.gamma.,)where, as viewed from a direction of formation of an edge of the regulating member, .theta. is the angle defined between an optical axis of the alignment beam and an optical axis of the exposure beam, f is the beam width of a portion of the alignment beam passing through the regulating member, .gamma. is the maximum of a divergence angle, in an exposure region, of the exposure beam, and m is the width of the alignment mark.

Abstract: An exposure apparatus usable with synchrotron radiation source wherein the synchrotron radiation is generated by electron injection into a ring. The exposure apparatus is to transfer a semiconductor element pattern of a mask onto a semiconductor wafer by the synchrotron radiation. The apparatus includes a shutter for controlling the exposure of the wafer. The shutter controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined in response to the electron injection, and thereafter, the illuminance distribution is corrected in a predetermined manner. By this, the illuminance distribution data for controlling the shutter always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer are exposed with high precision.

Abstract: An exposure apparatus for lithographically transferring a pattern of a mask onto a workpiece coated with a radiation sensitive material includes a first filter made the same material as of the substrate of the mask, a second filter formed by a base member made of the same material as the mask substrate and being coated with a radiation sensitive material, an illuminometer for measuring illuminance of light passed through the first and second filters, respectively, and a control device for determining an exposure time for lithographic transfer of the pattern of the mask onto the wafer, on the basis of a difference between a measured value as measured through the first filter and a measured value as measured through the second filter.