Abstract: A method of producing a nitride semiconductor crystal uses a metal organic chemical vapor deposition process and offers good controllability with respect to a p-type nitride semiconductor crystal. To that end, an organic metal compound of a group III element, a hydride of nitrogen, and an organic compound having any of the partial structures C—C—O, C—C?O, C?C—O, C?C?O, C?C—O, and C—O—C are used as source materials, and by a metal organic chemical vapor deposition process, C and O atoms are simultaneously introduced into the crystal to obtain p-type conductivity.

Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

Abstract: A light projecting device of the present invention includes: a light source unit including (i) a laser element for emitting light, (ii) a light converging lens for converging the light emitted from the laser element, and (iii) a light emitting section for emitting light upon receipt of the light converged by the light converging lens; and a reflector for projecting light emitted from the light source unit. The light source unit is provided so as to be attached to or detached from a fixed part to which the light source unit is to be fixed.

Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.

Abstract: A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.

Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.

Abstract: A headlamp system in accordance with the present invention includes (i) a laser light source unit including a light emitting section that emits light upon reception of a laser beam and (ii) an LED light source unit including an LED. The laser light source unit distributes light to a light-distributed spot, and the LED light source unit distributes light to a light-distributed area.

Abstract: A nitride semiconductor laser device with a reduction in internal crystal defects and an alleviation in stress, and a semiconductor optical apparatus comprising this nitride semiconductor laser device. First, a growth suppressing film against GaN crystal growth is formed on the surface of an n-type GaN substrate equipped with alternate stripes of dislocation concentrated regions showing a high density of crystal defects and low-dislocation regions so as to coat the dislocation concentrate regions. Next, the n-type GaN substrate coated with the growth suppressing film is overlaid with a nitride semiconductor layer by the epitaxial growth of GaN crystals. Further, the growth suppressing film is removed to adjust the lateral distance between a laser waveguide region and the closest dislocation concentrated region to 40 ?m or more.

Abstract: Provided is a semiconductor laser device that is free from or suffers less from deterioration resulting from a surge or that is less likely to suffer from deterioration resulting from a surge. The semiconductor laser device has a conductive stem 101, a submount 102 fixed to the stem 101, a nitride semiconductor laser chip 103 mounted on the submount 102, pins 104 and 105 fixed to the stem 101 but insulated therefrom, a wire connecting the pin 104 to a p-electrode of the nitride semiconductor laser chip 103, a wire connecting the pin 105 to an n-electrode of the nitride semiconductor laser chip 103, and a cap 106 enclosing the nitride semiconductor laser chip 103 and the submount 102 and fixed to the stem 101.

Abstract: A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.

Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

Abstract: A light emitting apparatus comprises a light emitting section for emitting light, a color of the light being changed with a value of a driving current, and a driving section for driving the light emitting section so that the light emitting section emits light having a desired color and a desired intensity, by generating the driving current based on a signal designating the desired color and a signal designating the desired intensity and by applying the driving current to the light emitting section.

Abstract: A light emitting device of the present invention includes: an LD chip for emitting excitation light; a light emitting body for emitting fluorescence upon irradiation with the excitation light from the LD chip; and a mirror including a light reflecting concave surface for reflecting the fluorescence from the light emitting body, the light reflecting concave surface of the mirror having a through-hole at a region other than a bottom region in the vicinity of the bottom of the light reflecting concave surface, and a truncated pyramid light converging section being inserted into the through-hole in order to guide the excitation light from the LD chip to the light emitting body.

Abstract: A light emitting device includes a light emitting element, a cap sealing the light emitting element, and a light conversion structural section covering an upper surface of the cap. The cap includes a base section having a hole for taking out light emitted from the light emitting element, and a glass section overlaid on the hole. The glass section is provided outside the base section, and the light conversion structural section is provided outside the glass section. According to this light emitting device, manufacturing cost can be reduced by suppressing reduction in yield.

Abstract: In a GaN-based laser device having a GaN-based semiconductor stacked-layered structure including a light emitting layer, the semiconductor stacked-layered structure includes a ridge stripe structure causing a stripe-shaped waveguide, and has side surfaces opposite to each other to sandwich the stripe-shaped waveguide in its width direction therebetween. At least part of at least one of the side surfaces is processed to prevent the stripe-shaped waveguide from functioning as a Fabry-Perot resonator in the width direction.

Abstract: The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply a raw material containing Mg and a Group V raw material containing N, and a second step of lowering a temperature by using a second carrier gas to which a material containing N is added, and hence solves the problems encountered in the art.

Abstract: The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply a raw material containing Mg and a Group V raw material containing N, and a second step of lowering a temperature by using a second carrier gas to which a material containing N is added, and hence solves the problems.

Abstract: In a nitride semiconductor light-emitting device, a nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer are successively stacked on an n-type nitride semiconductor layer. In a semiconductor light-emitting device, a first lower layer, a second lower layer, an active layer, and an upper layer having a thickness not greater than 40 nm are successively stacked on a substrate, and an interface of a second electrode for n-type in contact with the upper layer includes a metal of which a surface plasmon can be excited by light generated from the active layer.

Abstract: A light emitting device of the present invention includes: a laser diode group which generates a plurality of laser beams; a cylindrical light emitting element which emits incoherent light in response to the plurality of laser beams; and a light guide irradiation section which (i) guides the plurality of laser beams entered via a light incidence plane toward a light irradiation plane and (ii) irradiates the light irradiation area of the cylindrical light emitting element with the plurality of laser beams thus guided. The light irradiation plane of the light guide irradiation section has an area which is smaller than that of the light incidence plane.