Abstract: A secondary battery is provided which has a high energy density, a high capacity, an excellent stability in charge-discharge cycle as well as an excellent safety.

Abstract: To provide a liquid crystal display unit without occurrence of abnormal orientation of liquid crystal molecules and deterioration of the image quality and a method for manufacturing the same. Above and below a TFT, light shielding films are disposed and further the ruggedness generated by stacking a plurality of light shielding films is smoothed using a transparent resin not absorbing light with a wavelength of not smaller than 300 nm. As this transparent resin, acrylic resins are used. As a result, according to the present invention, no abnormal orientation of liquid crystal molecules occurs and a problem of reverse twist, reverse tilt or the like is less probable to take place. Since the smoothening film absorbs no light of not smaller than 300 nm, neither denaturalization nor coloration nor bubbles occur in the smoothening film even under irradiating environments of intense light of a projector or the like.

Abstract: A charge storage device such as a battery, wherein a positive electrode comprises a nitroxyl compound having a structure of a nitroxyl cation moiety represented by formula (I) in an oxidized state while having a structure of a nitroxyl radical moiety represented by formula (II) in a reduced state and a reaction represented by reaction formula (A) in which an electron is transferred between these states is used as a positive electrode reaction. The charge storage device can have a higher energy density and can be used at a large current.

Abstract: The present invention relates to a resist resin having an acid-decomposable group, which gives rise to decomposition of the acid-decomposable group to show an increased solubility to an aqueous alkali solution by the action of an acid, wherein the resist resin has, in the main chain, an alicyclic lactone structure represented by the following general formula (1). According to the present invention, a positive-type chemically amplified resist can be obtained which has high transparency to a far-ultraviolet light having a wavelength of about 220 nm or less, excellent etching resistance, and excellent adhesion to substrate; and a fine pattern required in production of semiconductor device can be formed.

Abstract: To provide a liquid crystal display unit without occurrence of abnormal orientation of liquid crystal molecules and deterioration of the image quality and a method for manufacturing the same. Above and below a TFT, light shielding films are disposed and further the ruggedness generated by stacking a plurality of light shielding films is smoothed using a transparent resin not absorbing light with a wavelength of not smaller than 300 nm. As this transparent resin, acrylic resins are used. As a result, according to the present invention, no abnormal orientation of liquid crystal molecules occurs and a problem of reverse twist, reverse tilt or the like is less probable to take place. Since the smoothening film absorbs no light of not smaller than 300 nm, neither denaturalization nor coloration nor bubbles occur in the smoothening film even under irradiating environments of intense light of a projector or the like.

Abstract: A chemically amplified photo-resist contains a photoacid generator for changing the solubility of resin after exposure to 130-220 nanometer wavelength light, and the photoacid generator contains two kinds of sulfonium salt compound expressed by general formulae [1] and [2] so that the chemically amplified photo-resist is improved in resolution, sensitivity and smoothness on side surfaces of a transferred pattern.

Abstract: Photoacid generators comprising sulfonium salt compounds represented by the following general formula (2) wherein R1 and R2 represent each an alkyl group optionally having oxo, or R1 and R2 may be cyclized together to form an alkylene group optionally having oxo; R3, R4 and R5 represent each hydrogen or a linear, branched, monocyclic, polycyclic or crosslinked cyclic alkyl group; and Y− represents a counter ion.

Abstract: The present invention relates to a photo acid generator which has high transparency to exposure light and also has excellent heat stability in a photoresist composition for lithography using far ultraviolet light, especially light of ArF excimer laser. The photo acid generator contains a sulfonium salt compound represented by the following general formula (1): wherein R1 represents an alkylene group, or an alkylene group having an oxo group, R2 represents a straight-chain, branched-chain, monocyclic, polycyclic or bridged cyclic alkyl group having an oxo group, or a straight-chain, branched-chain, monocyclic, polycyclic or bridged cyclic alkyl group, provided that either of R1 and R2 has an oxo group, and Y− represents a counter ion.

Abstract: A radical compound may be used as an active material for an anode layer 2 to provide a novel stable secondary battery with a higher energy density and a larger capacity. The radical compound used has, for example, a spin concentration of 1021 spins/g or more.

Abstract: A photoresist composition contains a photoacid generator and a polymer represented by the following formula: wherein R4, R6 and R9 each represents a hydrogen atom or a methyl group, R5 and R7 each represents a C17-23 divalent hydrocarbon group containing a bridged cyclic hydrocarbon group, R8 represents an acid-decomposable group, R10 represents a hydrogen atom or a C1-12 hydrocarbon group, x+y+z equals to 1, and x, y and z stand for 0 to 1, 0 to 1, and 0 to 0.9, respectively, and having a weight average molecular weight of from 1,000 to 500,000. According to the present invention, a chemical modification photoresist composition having high transparency to radiation of 220 nm and shorter and improved in etching resistance can be provided.

Abstract: An electrode including a compound acting as an electrode active material and represented by a general formula (1) having a diazine N,N′-dioxide structure. A novel battery with the higher specific density and the excellent charge and discharge stability can be provided by incorporating the electrode having the compound represented by the general formula (1).

Abstract: The thin film transistor (10) comprises a source region (14), a drain region (15), a channel forming region (16) between the source and drain regions, and a gate electrode (12). In this thin film transistor 10, the channel forming region (16) is composed of an organic compound having a radical.

Abstract: A photoelectrochemical device having new construction, which enables a large stable photoelectric conversion element, an energy storage element and the like to be manufactured at low cost. The photoelectrochemical device is provided with an organic compound which generates a radical compound through electrochemical oxidation reaction and/or reduction reaction, and a semiconductor arranged in contact with the organic compound. Preferably, the generated radical compound has a spin density of 1020 spins/g or more. In addition, it is preferable to use as the organic compound an organic polymer compound with the number average molecular weight ranging from 103 to 107.

Abstract: The present invention relates to a battery comprising at least a positive electrode, a negative electrode and an electrolyte as composing elements, wherein the positive electrode and/or the negative electrode comprise an active material of nitroxyl radical compound represented by the following general formula (1) as a starting material or a reaction product of at least a discharge reaction of electrode reactions: 1

Abstract: A sulfonium salt compound designated by a general formula (I), a photoresist composition containing the sulfonium salt compound and a method for patterning by employing the sulfonium salt compound.

Abstract: A chemically amplified photo-resist contains a photoacid generator for changing the solubility of resin after exposure to 130-220 nanometer wavelength light, and the photoacid generator contains two kinds of sulfonium salt compound expressed by general formulae [1] and [2] 1

Abstract: It is an object of the present invention to provide a negative photoresist composition for lithography, using short-wavelength light such as ArF excimer laser beam as a light source. The negative photoresist composition of the present invention is a negative photoresist composition comprising at least a polymer having a unit represented by the general formula (1) a crosslinking agent and a photo-acid generating agent, and the crosslinking agent is capable of crosslinking the polymer in the presence of an acid catalyst, whereby the polymer is insolubilized in a developer. Since the negative resist composition of the present invention is insolubilized in the developer by an action of an acid produced from the photo-acid generating agent at the exposed portion, a negative pattern can be obtained.

Abstract: Disclosed is a negative photoresist which is suitable for use in photolithography using light of 220 nm or shorter like the light from the ArF excimer laser as exposure light, avoids pattern deformation originated from swelling and has a high adhesion strength to the substrate (a micro pattern is hard to be separated from the substrate) in addition to a dry etching resistance and high resolution.

Abstract: A photoresist composition contains a photoacid generator and a polymer represented by the following formula: 1

Abstract: A positive electrode, negative electrode and electrolyte form in combination a battery, and at least one of the positive and negative electrodes has an electrode layer containing cyclic conjugated carbonyl compound expressed by general formula (1) 1