Abstract: A photoresist composition contains a photoacid generator and a polymer represented by the following formula: wherein R4, R6 and R9 each represents a hydrogen atom or a methyl group, R5 and R7 each represents a C17-23 divalent hydrocarbon group containing a bridged cyclic hydrocarbon group, R8 represents an acid-decomposable group, R10 represents a hydrogen atom or a C1-12 hydrocarbon group, x+y+z equals to 1, and x, y and z stand for 0 to 1, 0 to 1, and 0 to 0.9, respectively, and having a weight average molecular weight of from 1,000 to 500,000. According to the present invention, a chemical modification photoresist composition having high transparency to radiation of 220 nm and shorter and improved in etching resistance can be provided.

Abstract: The present invention relates to a photo acid generator which has high transparency to exposure light and also has excellent heat stability in a photoresist composition for lithography using far ultraviolet light, especially light of ArF excimer laser.

Abstract: In a secondary battery comprising a positive electrode, a negative electrode and an electrolyte therebetween, active material of one of the positive electrode and the negative electrode includes a compound having boron radicals or sulfur radicals.

Abstract: A form-improvement agent, for resist pattern, including a steroid compound is included in a positive chemically amplified resist. The form-improvement agent is in a range from 0.5 to 8 parts by weight per 100 parts by weight of a resin for resist included in the positive chemically amplified resist. The steroid compound is, for example, a cholic acid ester.

Abstract: A battery includes active material containing neutral carbon radical compound at one of or both of the electrodes, and the neutral carbon radicals participate in electrode reaction for generating current; the battery is light, because any heavy metal is not required for the active material, and the battery achieves large capacity without sacrifice of stability, because the unpaired electrons are localized at the carbon atoms in the neutral carbon radical compound.

Abstract: A photosensitive resin composition in accordance with the present invention has (a) a polymer having repetition units expressed by a general formula (1): wherein R1, R3, and R5 each represents a hydrogen atom or a methyl group, R2 represents a bridged cyclic hydrocarbon group having a carbon number in the range of 7 to 22 inclusive, R4 represents a hydrocarbon group including an epoxy group, x+y+z=1, wherein 0<x≦0.7, 0<y<1, 0<z<1, and the polymer has a weight averaged molecular weight of 1,000 to 500,000, and (b) a photo acid generator, the weight ratio between (a) and (b) being 75 to 99.8 weight parts of (a) to 0.2 to 25 weight parts of (b). This composition may include a multi-functional epoxy compound. This composition is deposited on a substrate to be worked, and after heating, the composition is exposed to an activating irradiation, and then, a heat treatment is carried out, and further, the composition is developed so as to form a pattern.

Abstract: Disclosed is a negative photoresist which is suitable for use in photolithography using light of 220 nm or shorter like the light from the ArF excimer laser as exposure light, avoids pattern deformation originated from swelling and has a high adhesion strength to the substrate (a micro pattern is hard to be separated from the substrate) in addition to a dry etching resistance and high resolution.

Abstract: A photoresist composition contains a photoacid generator and a polymer represented by the following formula: 1

Abstract: There are here disclosed a photoresist material for lithography using a light of 220 nm or less which comprises at least a polymer represented by the following formula (2) and a photo-acid generator for generating an acid by exposure: 1

Abstract: There is disclosed a sensitive resin composition in accordance with the present invention has a 75 to 99.

Abstract: Monomers expressed by the following general formula are polymerized so as to obtain polymer, and the polymer and photoacid generator is dissolved in solvent so as to form a chemically amplified resist layer large in both transparency and sensitivity to ArF excimer laser light and improved in resolution. wherein R1 represents a hydrogen atom or a methyl group, R2 represents a bridged hydrocarbon group having the carbon number between 7 and 22, m equals 0 or 1, n equals 0 or 1 and R3 represents a hydrogen atom, a methyl group or an acetyl group.

Abstract: A photoresist composition contains a photoacid generator and a polymer represented by the following formula: wherein R4, R6 and R9 each represents a hydrogen atom or a methyl group, R5 and R7 each represents a C17-23 divalent hydrocarbon group containing a bridged cyclic hydrocarbon group, R8 represents an acid-decomposable group, R10 represents a hydrogen atom or a C1-12 hydrocarbon group, x+y+z equals to 1, and x, y and z stand for 0 to 1, 0 to 1, and 0 to 0.9, respectively, and having a weight average molecular weight of from 1,000 to 500,000. According to the present invention, a chemical modification photoresist composition having high transparency to radiation of 220 nm and shorter and improved in etching resistance can be provided.

Abstract: It is an object of the present invention to provide a negative photoresist composition for lithography, using short-wavelength light such as ArF excimer laser beam as a light source.The negative photoresist composition of the present invention is a negative photoresist composition comprising at least a polymer having a unit represented by the general formula (1) ##STR1## , a crosslinking agent and a photo-acid generating agent, and the crosslinking agent is capable of crosslinking the polymer in the presence of an acid catalyst, whereby the polymer is insolubilized in a developer. Since the negative resist composition of the present invention is insolubilized in the developer by an action of an acid produced from the photo-acid generating agent at the exposed portion, a negative pattern can be obtained.

Abstract: A negative type photoresist composition includes a polymer which contains a repetition unit which is expressed by a general chemical formula (1) and has a weight average molecule weight in a range of 1000 to 500000, a crosslinker composed of a compound which contains a functional group which is expressed by a general chemical formula (2), and a photo-acid generator which generates acid in response to a light. The general chemical formula (1) is as follows, ##STR1## where in the general chemical formula (1), R.sup.1 is a hydrogen atom or a methyl group, R.sup.2 is an alkylene group containing carbon atoms in a range of 7 to 18 and having a bridged cyclic hydrocarbon group.

Abstract: A negative resist material suitable for lithography employing for exposure a beam having a wavelength of 220 nm or less. The negative resist material contains a polymer having a weight average molecular weight of 1,000-500,000 and represented by the following formula (1): ##STR1## wherein R.sup.1, R.sup.3, and R.sup.5 are hydrogen atoms or methyl groups; R.sup.2 is a specified divalent hydrocarbon group; R.sup.4 is a hydrocarbon group having an epoxy group; R.sup.6 is a hydrogen atom or a C.sub.1-12 hydrocarbon group; and each of x, y, and z represents an arbitrary number satisfying certain relations; a photoacid generator generating an acid through exposure; and optionally a polyhydric alcohol or a polyfunctional epoxy group. The present invention also discloses a pattern formation method, and a method of manufacturing semiconductor devices using the pattern formation method.

Abstract: A negative type photoresist composition is composed of a polymer which contains a repetition unit which is expressed by a general chemical formula (1), a crosslinker composed of a compound which contains a functional group which is expressed by a general chemical formula (2), and a photo-acid generator which generates acid in response to a light. The chemical formula (1) is as follows, ##STR1## In this case, R.sup.1 is a hydrogen atom or a methyl group, R.sup.2 is an alkylene group containing carbon atoms in a range of 7 to 18 and having a bridged cyclic hydrocarbon group, and a weight average molecule weight of the polymer is in a range of 1000 to 500000. Also, the chemical formula (2) is as follows, ##STR2## In this case, R.sup.8 is a hydrogen atom, an alkyl group containing carbon atoms in a range of 1 to 6 or an oxoalkyl group containing carbon atoms in a range of 3 to 6.

Abstract: Monomers expressed by the following general formula are polymerized so as to obtain a polymer, and the polymer and a photoacid generator are dissolved in a solvent so as to form a chemically amplified resist layer large in both transparency and sensitivity to ArF excimer laser light and improved in resolution. ##STR1## wherein R.sup.1 represents a hydrogen atom or a methyl group, R.sup.2 represents a bridged hydrocarbon group having the carbon number between 7 and 22, m equals 0 or 1, n equals 0 or 1 and R.sup.3 represents a hydrogen atom, a methyl group or an acetyl group.

Abstract: There is provided a photoresist including (a) a resin composed of a polymer represented with the following general formula [1], and (b) a photo acid generator which produces acid when exposed to a light: ##STR1## wherein each of R.sup.1, R.sup.3 and R.sup.7 represents one of a hydrogen atom and a methyl group, R.sup.2 represents a hydrocarbon group including a bridged cyclic hydrocarbon group and having a carbon number in the range of 7 to 13 both inclusive, R.sup.4 represents one of a hydrogen atom and a hydrocarbon group having a carbon number of 1 or 2, R.sup.5 represents a hydrocarbon group having a carbon number of 1 or 2, R.sup.

Abstract: There is provided a photoresist including (a) a resin composed of a polymer having a compound represented with the following general formula [1] within a structural unit thereof, and (b) a photo acid generator. ##STR1## wherein R.sup.1 represents a hydrogen atom, R.sup.2 represents a divalent hydrocarbon group including a bridged cyclic hydrocarbon group and having a carbon number in the range of 7 to 13 both inclusive, R.sup.3 and R.sup.4 represent a hydrocarbon group having a carbon number of 1 or 2, and R.sup.5 represents one of (a) a hydrocarbon group having a carbon number of 1 to 12, (b) a hydrocarbon group having a carbon number of 1 to 12 and replaced with an alkoxy group having a carbon number of 1 to 12, and (c) a hydrocarbon group having a carbon number of 1 to 12 and replaced with an acyl group having a carbon number of 1 to 13. The above mentioned photoresist produces no extra polymer by side reaction.

Abstract: The invention provides a photosensitive resin which includes polymer including a group which reacts with an acid to thereby convert a polarity thereof, a photo acid generator which is responsive to radial rays to thereby generate an acid, and a solvent in which the polymer and the photo acid generator is soluble. The polymer is a terpolymer represented by a following general formula (I) wherein n represents a positive integer ranging from 5 to 1000 both inclusive, R.sup.4 is a group selected from a group consisting of a tricyclodecanyl group, a dicydopentenyl group, a dicyclopentenyloxyethyl group, a cyclohexyl group, a norbonyl group, a norbornaneepoxy group, a norbornaneepoxymethyl group and an adamantyl group, R.sup.5 is a group selected from a group consisting of a tetrahydropyranyl group, a tetrahydrofuranyl group, a methyl group, an ethyl group, a propyl group, a tert-butyl group and 3-oxocyclohexyl group, and x+y+z=1 in which x is a variable in the range from 0.1 to 0.