Abstract: A semiconductor device, wherein an electrode wiring, which is in contact with semiconductor layers of mutually different conductive types and serves to connect at least he layers of mutually different conductive types, comprises a first portion principally composed of a component same as the principal component of the semiconductor layers, and a second portion consisting of a metal.

Abstract: A recording head comprises electrothermal transducers for jetting ink and functional devices for driving these electrothermal transducers, both of which are arranged on a single substrate plate. The functional devices comprise a pair of major electrode regions such as drain and source regions arranged on the substrate plate, a region comprising control electrode region and surrounding one of electrode regions used to be grounded, an insulating layer arranged on the control electrode region and a control electrode arranged on the insulating layer. The control layer alters the semiconductor types of a boundary surface of the control electrode region by applying a control voltage through the insulating layer and as a result a current flow between major electrode regions, source and drain, is controlled.

Abstract: A pipe joint for connecting water supply pipe together and which utilizes compression seals between the pipe and the joint, and is comprised of a holding housing having a band body that surround a seal ring and a holding ring. A locking bolt is threadably tightened onto the holding housing. The seal ring is embedded and sealed within outside surface of both ends of the separated pipes after the locking bolt is threadably tightened. The holding ring is positioned to engage and become fully engaged within the groove at each of outside of the separated pipes, and hold the separation pipes against being easily separated after the locking bolt is threadably tight-end onto the holding housing.

Abstract: A semiconductor device with a high-density wiring structure, and a producing method for such device are provided. The semiconductor device has a substrate such as silicon, an insulation layer laminated on the substrate and having a groove or a hole, and a wiring of a conductive material formed in the groove or hole in the insulation layer. The wiring is formed by depositing a conductive material such as aluminum or an aluminum alloy in the groove or hole of the insulation layer by a CVD method utilizing alkylaluminum hydride gas and hydrogen. The groove or hole can be formed by an ordinary patterning method combined with etching.

Abstract: A process for preparing an X-ray mask structure comprises an X-ray transmissive film, an X-ray absorptive member held on the X-ray transmissive film and supporting frame for supporting the X-ray transmissive film. The X-ray absorptive member is constituted of crystalline grains having a grain boundary size of 1 .mu.m or larger, or has a density of 90% or more relative to the density of the bulk material.

Abstract: A semiconductor device including a field effect transistor has source and drain areas formed on the main surface of a semiconductor substrate and a gate electrode formed on the main surface across a gate insulation film. The gate electrode has a first electrode portion with an electron donating surface and a second electrode portion consisting of metal formed on the first electrode portion.

Abstract: A photoelectric converting apparatus has a semiconductor transistor for accumulating carriers generated by a light excitation into a control electrode region. A portion in the control electrode region other than at least a portion which contributes to an operation of the transistor has impurity concentrations higher than an impurity concentration of the portion which contributes to the transistor operation.

Abstract: A recording head for discharging ink by using thermal energy comprises a plurality of outlets for discharging ink and a substrate including a common substrate plate of P type, a plurality of electrothermal converting elements and a plurality of functional elements connected to the respective electrothermal converting elements and formed on the common substrate plate as well as the electrothermal converting elements. Each of the functional elements has a first semiconductor region of N type, a second semiconductor region of P type provided within the first semiconductor region and a third semiconductor region of N type provided within the second semiconductor region, so as to form a rectifying junction. The first, second and third semiconductor regions are formed by diffusion of impurity atoms in the common semiconductor substrate plate.

Abstract: A process for preparing a semiconductor substrate comprises a step of making a silicon substrate porous, a step of forming a non-porous silicon monocrystalline layer on the resulting porous substrate, a step of bonding the surface of the non-porous silicon monocrystalline layer to another substrate having a metallic surface, and a step of removing the porous silicon layer of the bonded substrates by selective etching.

Abstract: This invention provides a method of forming a deposition film serving as a high-quality wiring layer having good stress migration durability against any material such as a non-monocrystalline material. A substrate is located in a deposition film formation space, a gas of an alkylaluminum halide is supplied to the deposition film formation space, and an aluminum film is selectively formed on an electron donor surface at a partial pressure of the alkylaluminum halide of 7.times.10.sup.-3 Torr to 9.times.10.sup.-2 Torr in the range of a decomposition temperature or more of the alkylaluminum halide and 450.degree. C. or less. When deposition is to be performed on the non-monocrystalline material, a chemical treatment for terminating with hydrogen atoms a non-electron donor surface of a substrate having the electron donor surface and the non-electron donor surface is performed, and the deposition film is deposited by a non-selective deposition method.

Abstract: A device for forming a silicon oxide film comprises a quartz tube housing a substrate comprised of silicon, means for heating internally said quartz tube and means for delivering and flowing hydrogen gas and oxygen gas into said quartz tube to effect hydrogen combustion, wherein the gas introducing holes for selectively delivering and flowing either one of said gases are arranged in the neighborhood to each other while facing each other.

Abstract: The semiconductor circuit device is provided with a first wiring layer connected to a semiconductor substrate through a contact hole in an insulation film formed on a main surface of the semiconductor substrate, and a second wiring layer connected with the first wiring layer through a through-hole in an interlayer insulation film formed on the first wiring layer, wherein the first wiring is substantially flat on the contact hole and the area of the through-hole is smaller than that of the contact hole.

Abstract: A method for producing a substrate for a recording head wherein a plurality of electro-thermal converting elements, a plurality of driving functional elements for respectively driving the electro-thermal converting elements and a plurality of wiring electrodes for respectively connecting each of the driving functional elements and each of the electro-thermal converting elements are formed on a supporting member by photolithography comprises forming the wiring electrodes by etching a material layer for the wiring electrodes while etchingwise removing a photoresist for masking the material layer for the wiring electrodes.

Abstract: A process for forming a metal film comprises the steps of arranging a substrate in a space for formation of the film, introducing an alkylaluminum hydride gas and hydrogen gas into the space and heating directly the substrate to form a metal film comprising aluminum as main component on the surface of the substrate.

Abstract: A photoelectric conversion device has a plurality of photoelectric conversion cells, each cell having a semiconductor transistor comprising two main electrode regions made of one conductive type semi-conductor and a control electrode region made of another conductive type semiconductor and a capacitor for controlling the control electrode region at a floating state, the potential at the control electrode region at a floating state being controlled by means of the capacitor so that carriers generated by light are stored in the control electrode region and the output of each cell is controlled in accordance with the storage voltage generated by the storage.

Abstract: A semiconductor device is provided having an insulated gate type transistor comprising a semiconductor body. First and second semiconductor regions define source and drain regions buried in the semiconductor body. A third semiconductor region defines a channel region disposed between the first and second semiconductor regions. A recess is provided having a bottom surface and a side surface. The recess is formed in the semiconductor body and is provided adjacent to the third semiconductor region. An insulating film is formed on the entire side surface of the recess, and a gate electrode comprising a metallic region is provided in the recess. The first, second and third regions, the gate electrode region and the insulating film are juxtaposed in a direction along a main face of the semiconductor body. The insulating film and the gate electrode region substantially occupy the recess.

Abstract: A semiconductor device and a manufacture method for the semiconductor device, the method comprising the steps of forming an insulating film on the surface of a semiconductor substrate, forming contact holes in the insulating layer to expose the surface of the semiconductor substrate, selectively depositing a metal film, which contains aluminum as a main ingredient, on the exposed surface to form an electrodes in each the contact hole, and forming a wiring made of a second metal, which contains as a principal ingredient an element other than aluminum, on both the insulating layer and the electrode. Preferably, the upper surface of each electrode is substantially flat in a connecting portion between the electrode and the wiring, and a relationship of A.gtoreq.C is established where A is a length of one side of the electrode's upper surface and C is a width of the wiring in the connecting portion therebetween.

Abstract: A recording head for discharging ink by using thermal energy comprises a plurality of outlets for discharging ink and a substrate including a common substrate plate of P type, a plurality of electrothermal converting elements and a plurality of functional elements connected to the respective electrothermal converting elements and formed on the common substrate plate as well as the electrothermal converting elements. Each of the functional elements has a first semiconductor region of N type, a second semiconductor region of P type provided within the first semiconductor region and a third semiconductor region of N type provided within the second semiconductor region, so as to form a rectifying junction. The first, second and third semiconductor regions are formed by diffusion of impurity atoms in the common semiconductor substrate plate.

Abstract: A semiconductor device, wherein an electrode wiring, which is in contact with semiconductor layers of mutually different conductive types and serves to connect at least the layers of mutually different conductive types, comprises a first portion principally composed of the same component as the principal component of the semiconductor layers, and a second portion consisting of a metal.

Abstract: A recording head has a liquid emission section with an orifice for emitting ink, an electro-thermal transducer producing thermal energy for ink emission and a functional element electrically connected to the electro-thermal transducer. The functional element is connected to the transducer by a layer formed of the same material as a layer of a heat generating resistive layer constituting the electro-thermal transducer, which enables the formation of a large number of functional elements on a single substrate while maintaining the elements in electrical isolation without increasing manufacturing cost.