Abstract: A floating power generation assembly comprises at least three floating units (900) floating on a body of water, and at least three anchors (916) secured to a solid surface beneath the body of water, each of the floating units (900) being provided with a power generator, the floating units (900) being arranged substantially at the vertices of at least one equilateral triangle. Ship-borne apparatus for deploying the floating units of such a power generation assembly and a novel multiple wind turbine assembly are also described.

Abstract: A floating power generation assembly has at least three floating units (3400) provided with power generation means (3402, 3404) and floating in a body of water. At least one of the three floating units (3400) is a tension leg platform. The assembly also comprises first anchors secured to a surface beneath the water, and first cables (3414, 3416) connecting the buoyant body (3400) to the first anchors. Second anchors are secured to the underwater surface and connected by second cables (3412) to the floating units (3400). The floating units (3400) are arranged substantially at the vertices of at least one triangle or quadrilateral.

Abstract: A floating power generation assembly comprises at least three floating units (900) floating on a body of water, and at least three anchors (916) secured to a solid surface beneath the body of water, each of the floating units (900) being provided with a power generator, the floating units (900) being arranged substantially at the vertices of at least one equilateral triangle. Ship borne apparatus for deploying the floating units of such a power generation assembly and a novel multiple wind turbine assembly are also described.

Abstract: On a surface of a glass cloth adhered a mica layer sheet, a mixture of inorganic particles having a thermal conductivity of at least 5 W/mK, a resin, and a solvent is applied to form a layer of the mixture of the inorganic particles, the resin, and the solvent; the layer of the mixture is reduced in thickness using a doctor blade, followed by pressurizing to form a high thermally conducting layer; the mica layer sheet on which the high thermally conducting layer is disposed is cut to obtain a mica insulating tape; and the mica insulation tape is wound around a coil conductor. As a result, an insulated coil that is excellent in the voltage endurance characteristics and has a high thermal conductivity is manufactured.

Abstract: A floating power generation assembly comprises at least three floating units (900) floating on a body of water, and at least three anchors (916) secured to a solid surface beneath the body of water, each of the floating units (900) being provided with power generation means, the floating units (900) being arranged substantially at the vertices of at least one equilateral triangle. The invention also provides ship-borne apparatus for deploying the floating units of such a power generation assembly and a novel multiple wind turbine assembly.

Abstract: On a surface of a glass cloth adhered a mica layer sheet, a mixture of inorganic particles having a thermal conductivity of at least 5 W/mK, a resin, and a solvent is applied to form a layer of the mixture of the inorganic particles, the resin, and the solvent; the layer of the mixture is reduced in thickness using a doctor blade, followed by pressurizing to form a high thermally conducting layer; the mica layer sheet on which the high thermally conducting layer is disposed is cut to obtain a mica insulating tape; and the mica insulation tape is wound around a coil conductor. As a result, an insulated coil that is excellent in the voltage endurance characteristics and has a high thermal conductivity is manufactured.

Abstract: A plasma processing apparatus includes a vacuum chamber for evacuating gas therefrom, for introducing reaction gas therein, and for generating plasma therein through high frequency power application. A substrate hold stage is set in the vacuum chamber, with the substrate hold stage including a set face having a recessed part, wherein a rear face of a substrate to be subjected to plasma processing is held on the set face.

Abstract: A substrate detection sensor is operatively connected to a door moving mechanism for opening/closing a front door with respect to a sealed container accommodating therein a plurality of substrates. The substrate detection sensor enters the sealed container and detects the substrates successively as it is lowered integrally with the front door, and retracts from the sealed container when all of the substrates have been detected.

Abstract: A process for preparing a highly pure silicone ladder polymer of the general formula (1): wherein R1 and R2 represent F, H, a lower alkyl group, an alkenyl group, an aryl group, a lower fluorinated alkyl group, a fluorinated alkenyl group or a fluorinated aryl group; R3, R4, R5 and R6 each represents H, a lower alkyl group or a lower fluorinated alkyl group; and n represents an integer of 5 to 10000, which comprises: (a) a step of obtaining a prepolymer in which at least one organosilane compound is dissolved in an organic solvent and hydrolyzed with ultrapure water; (b) a step of washing the obtained prepolymer with ultrapure water; and, (c) a step of dissolving the washed prepolymer in an organic solvent and heating without a catalyst.

Abstract: A substrate detection sensor is operatively connected to a door moving mechanism for opening/closing a front door with respect to a sealed container accommodating therein a plurality of substrates. The substrate detection sensor enters the sealed container and detects the substrates successively as it is lowered integrally with the front door, and retracts from the sealed container when all of the substrates have been detected.

Abstract: Data related to an attractive force between a substrate holder 3 and a substrate 2 is detected when pushing up and releasing the substrate 2 from the substrate holder 3, and when the attractive force is detected to be greater than a predetermined value, the push-up operation is regulated by a controller 18.

Abstract: In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.

Abstract: A high-purity silicone ladder polymer of high molecular weight which contains 1 ppm or less of sodium, potassium, iron, copper, lead, magnesium, manganese and chlorine, and 1 ppb or less of uranium and thorium; and whose polymerization degree is 600 to 10000. Trialkoxysilane compounds or trichlorosilane compounds are hydrolyzed to produce a high-purity silicone ladder prepolymer whose polymerization degree is 5 to 600. The silicone ladder prepolymer is subjected to dehydrative condensation by using a nucleophilic reagent as a catalyst, and then purified in a dissolution/reprecipitation method to yield the silicone ladder polymer.

Abstract: A plasma processing apparatus includes a vacuum container accommodating a to-be-processed substrate. A vacuum discharge device discharges gas from the container, and a gas feed device feeds a gas in the container. A pair of electrodes includes one which has a concave surface for holding the substrate thereon. A high frequency power supply device supplies a high frequency power to the electrodes, a gas feed device for filling between the substrate and the electrodes with an inert gas to cool the substrate, and a holding device for pressing a side end face of the substrate in a direction along a surface of the substrate to shape the substrate into a concave while holding the substrate on the concave surface of the electrode.

Abstract: A process for concentrating ozone, which includes switching a plurality of adsorption columns each packed with an adsorbent capable of preferentially adsorbing ozone thereon sequentially to an adsorption step where the adsorbent is maintained at a low temperature to adsorb ozone thereon; a desorption step where the adsorbent is heated to desorb ozone therefrom, and a scavenger gas is introduced in a substantially fixed amount into the adsorption column to discharge the thus desorbed ozone being carried on the scavenger gas; and a cooling step where the adsorbent having completed the desorption step is cooled to the same low temperature level as in the adsorption step. Heating of the adsorbent in the desorption step is carried out depending on the time elapsed after desorption is started or on the ozone concentration of the gas discharged from the adsorption column performing the desorption step. A gas having a predetermined pressure is employed as the scavenger gas in the desorption step.

Abstract: In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.

Abstract: In a plasma processing apparatus having an upper electrode and a lower electrode in a vacuum chamber, a substrate receiving face of the lower electrode is formed to have a same convex surface as a deflected face of a substrate on condition that surface of the substrate is freely supported on an circumference thereof, and a uniform pressure is applied to the back of the substrate.

Abstract: In a semiconductor device and a method of fabrication thereof, a resin film forms an interlayer film of the semiconductor device having a multilayer interconnection structure, and is formed by only one coating using coating liquid containing silicone ladder polymers represented by the chemical formula: (HO).sub.2 (R.sub.2 Si.sub.2 O.sub.3).sub.n H.sub.2. As a result, it is possible to improve long-term reliability of electric characteristics or the like, and simplify a process.

Abstract: A semiconductor device having a stress-buffering film which is effective in buffering the stress caused by a molding resin during sealing, the stress-buffering film being made of a silicone ladder resin represented by formula (I) ##STR1## wherein each end group R may be the same or different and represents a hydrogen atom or an alkyl group, each side chain R' may be the same or different and represents a cyclohexyl group, a lower alkyl group, or a photopolymerizable unsaturated group, and n is an integer of 10 or larger.

Abstract: A novel method is proposed for the preparation of a superlattice multilayered film, which has a multilayered structure alternately consisting of epitaxially grown layers of a metal and layers of a metal oxide formed on the surface of a substrate and is useful as high-speed electronic devices, soft X-ray reflectors, neutron beam polarizers and the like. According to the discovery leading to this invention, good epitaxial growth of the layers can be accomplished when the metal has a face-centered cubic lattice structure and the metal oxide has a sodium chloride-type cubic lattice structure and the difference in the lattice constant between the metal and the metal oxide is small enough as in the combinations of silver and nickel oxide or magnesium oxide and nickel and nickel oxide.