Abstract: A memory includes: a dielectric fin formed over a substrate; and a pair of memory cells disposed along respective sidewalls of the dielectric fin, each of the pair of memory cells comprising: a first conductor layer; a selector layer; a resistive material layer; and a second conductor layer, wherein the first conductor layer, selector layer, resistive material layer, and second conductor layer each includes upper and lower boundaries, and at least one of the upper and lower boundaries is tilted away from one of the sidewalls of the dielectric fin by an angle.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.

Abstract: A liquid-crystal (LC) material having negative dielectric anisotropy and the use thereof for optical, electro-optical and electronic purposes, such as for example in LC displays, in particular energy saving displays based on the ECB, IPS or FFS effect, where the liquid crystal medium contains one or more compounds of formula I and one or more compounds compounds of formulae IIA, IIB, IIC and IID

Abstract: The present disclosure relates to an oligopeptide. The oligopeptide includes an amino acid sequence. The amino acid sequence includes a binding motif, and the binding motif has a specific amino acid sequence. The present disclosure also relates to a testing kit including the oligopeptide and a medical composition including the oligopeptide.

Abstract: A rehabilitation assisting apparatus has a main body, a waist assisting unit mounted above the main body, and two leg assisting units separately disposed side by side above the main body. Each of the leg assisting units is pivotally connected with the waist assisting unit. An upper rocking plate of the waist assisting unit can be driven to roll leftward and rightward to rehabilitate or train a waist of a user. A leg lifting bracket of each of the leg assisting unit can be driven to pitch upward and downward to rehabilitate or train a leg of the user.

Abstract: A composite power element and a method for manufacturing the same are provided. The power element includes a substrate structure, an insulation layer, a dielectric layer, a metal-oxide-semiconductor field-effect transistor (MOSFET), and a zener diode. The MOSFET is formed in a transistor formation region of the substrate structure. The zener diode is formed in a circuit element formation region of the substrate structure, and includes a zener diode doped structure formed on the insulation layer and covered by the dielectric layer. The zener diode doped structure includes a P-type doped region and an N-type doped region. The zener diode includes a zener diode metal structure formed on the dielectric layer and partially passes through the dielectric layer to be electrically connected to the P-type doped region and the N-type doped region. The zener diode is configured to receive a reverse bias voltage when the power element is energized.

Abstract: A composite power element and a method for manufacturing the same are provided. The power element includes a substrate structure, an insulation layer, a dielectric layer, a metal-oxide-semiconductor field-effect transistor (MOSFET), and a zener diode. The MOSFET is formed in a transistor formation region of the substrate structure. The zener diode is formed in a circuit element formation region of the substrate structure, and includes a zener diode doped structure formed on the insulation layer and covered by the dielectric layer. The zener diode doped structure includes a P-type doped region and an N-type doped region. The zener diode includes a zener diode metal structure formed on the dielectric layer and partially passes through the dielectric layer to be electrically connected to the P-type doped region and the N-type doped region. The zener diode is configured to receive a reverse bias voltage when the power element is energized.

Abstract: The present invention relates to a biomarker and target for diagnosis, prognosis and treatment of ankylosing spondylitis (AS). The present invention also relates to a method for producing an animal model for AS, an animal model produced therefrom, and a method for screening for an agent pharmaceutically active in the treatment of A S using such animal model.

Abstract: The present invention relates to a use of hypoxia-cultured mesenchymal stem cells (MSCs) for manufacture of a cell graft for treating a musculoskeletal disorder, particularly osteoarthritis.

Abstract: A method and a pharmaceutical composition for treating an atherosclerotic lesion are provided, including administering a subject in need thereof a therapeutically effective amount of a composition comprising hypoxia-cultured MSCs obtained by culturing auto- or allo-MSCs under low oxygen conditions.

Abstract: The present invention relates to a use of hypoxia-cultured mesenchymal stem cells (MSCs) for manufacture of a cell graft for treating a musculoskeletal disorder, particularly osteoarthritis.

Abstract: A new method for preventing tumorigenicity or treating a cancer in a subject includes administering to the subject a Collagen XVII (Col XVII) inhibitor in an amount effective to inhibit and prevent survival, tumorigenesis and metastasis of cancer cells and/or cancer stem cells (CSCs).

Abstract: The present invention relates to a driving circuit for a display panel and the driving module thereof and a display device and the method for manufacturing the same. The present invention comprises a power generating module, a plurality of signal generating units, a power generating circuit, and a scan control circuit. The power generating module generates a supply power source according to an input power source. The plurality of signal generating units are coupled to the power generating module and generate a plurality of control signals according to the supply power source and a plurality of input signals. The power generating circuit generates a driving power source. The scan control circuit is coupled to the power generating circuit and the plurality of signal generating unit, and generates a plurality of scan signals according to the driving power source and at least one of the plurality of control signals.

Abstract: A method and a pharmaceutical composition for treating an atherosclerotic lesion are provided, including administering a subject in need thereof a therapeutically effective amount of a composition comprising hypoxia-cultured MSCs obtained by culturing auto- or allo-MSCs under low oxygen conditions.

Abstract: The present invention relates to a driving circuit for a display panel and the driving module thereof and a display device and the method for manufacturing the same. The present invention comprises a power generating module, a plurality of signal generating units, a power generating circuit, and a scan control circuit. The power generating module generates a supply power source according to an input power source. The plurality of signal generating units are coupled to the power generating module and generate a plurality of control signals according to the supply power source and a plurality of input signals. The power generating circuit generates a driving power source. The scan control circuit is coupled to the power generating circuit and the plurality of signal generating unit, and generates a plurality of scan signals according to the driving power source and at least one of the plurality of control signals.

Abstract: The present invention relates to a novel method for expanding mesenchymal stem cells (MSCs) in low-density and hypoxic condition as compared to normal air conditions traditionally used in cell culture. The present method provides rapid and efficient expansion of human MSCs without losing cellular proliferation and stem cell properties, including increase in proliferation, decrease in senescence, and increase in differentiation potential both in vitro and in vivo. The expanded MSCs by the present method may maintain normal karyotyping, and will not form tumor when transplanted into mammal.

Abstract: An water-temperature-independent faucet includes a thermal-insulation core containing therein a water inlet and a water outlet, and being laterally formed with a socket that is communicated with the water inlet and the water outlet; a control valve deposited in the socket for selectively communicating the water inlet with the water outlet; a housing defining therein an accommodating space for receiving the thermal-insulation core; and an inlet conduit having one end fittingly engaged with the water inlet through an O-ring.

Abstract: A switching power converter including an upper-bridge switch, a lower-bridge switch, an impedance circuit, a first control circuit, a second control circuit and a logic circuit is provided. The impedance circuit generates an output voltage and a sensing current according to a conductive state of the upper-bridge switch and the lower-bridge switch. The first control circuit generates a first pulse signal according to the output voltage. The second control circuit has a first mode and a second mode for generating a second pulse signal and a third pulse signal individually. Furthermore, the second control circuit uses different threshold values in different modes to determine whether to switch the mode thereof, so as to form a hysteretic effect in mode switching. The logic circuit controls the upper-bridge switch by the first pulse signal, and controls the lower-bridge switch by the second pulse signal or the third pulse signal.

Abstract: A semiconductor device having integrated MOSFET and Schottky diode includes a substrate having a MOSFET region and a Schottky diode region defined thereon; a plurality of first trenches formed in the MOSFET region; and a plurality of second trenches formed in the Schottky diode region. The first trenches respectively including a first insulating layer formed over the sidewalls and bottom of the first trench and a first conductive layer filling the first trench serve as a trenched gate of the trench MOSFET. The second trenches respectively include a second insulating layer formed over the sidewalls and bottom of the second trench and a second conductive layer filling the second trench. A depth and a width of the second trenches are larger than that of the first trenches; and a thickness of the second insulating layer is larger than that of the first insulating layer.