Abstract: A switching power converter including an upper-bridge switch, a lower-bridge switch, an impedance circuit, a first control circuit, a second control circuit and a logic circuit is provided. The impedance circuit generates an output voltage and a sensing current according to a conductive state of the upper-bridge switch and the lower-bridge switch. The first control circuit generates a first pulse signal according to the output voltage. The second control circuit has a first mode and a second mode for generating a second pulse signal and a third pulse signal individually. Furthermore, the second control circuit uses different threshold values in different modes to determine whether to switch the mode thereof, so as to form a hysteretic effect in mode switching. The logic circuit controls the upper-bridge switch by the first pulse signal, and controls the lower-bridge switch by the second pulse signal or the third pulse signal.

Abstract: An integrated structure of an IGBT and a diode includes a plurality of doped cathode regions, and a method of forming the same is provided. The doped cathode regions are stacked in a semiconductor substrate, overlapping and contacting with each other. As compared with other doped cathode regions, the higher a doped cathode region is disposed, the larger implantation area the doped cathode region has. The doped cathode regions and the semiconductor substrate have different conductive types, and are applied as a cathode of the diode and a collector of the IGBT. The stacked doped cathode regions can increase the thinness of the cathode, and prevent the wafer from being overly thinned and broken.

Abstract: A power semiconductor device includes a backside metal layer, a substrate formed on the backside metal layer, a semiconductor layer formed on the substrate, and a frontside metal layer. The semiconductor layer includes a first trench structure including a gate oxide layer formed around a first trench with poly-Si implant, a second trench structure including a gate oxide layer formed around a second trench with poly-Si implant, a p-base region formed between the first trench structure and the second trench structure, a plurality of n+ source region formed on the p-base region and between the first trench structure and the second trench structure, a dielectric layer formed on the first trench structure, the second trench structure, and the plurality of n+ source region. The frontside metal layer is formed on the semiconductor layer and filling gaps formed between the plurality of n+ source region on the p-base region.

Abstract: The present invention relates to a novel method for expanding mesenchymal stem cells (MSCs) in low-density and hypoxic condition as compared to normal air conditions traditionally used in cell culture. The present method provides rapid and efficient expansion of human MSCs without losing cellular proliferation and stem cell properties, including increase in proliferation, decrease in senescence, and increase in differentiation potential both in vitro and in vivo. The expanded MSCs by the present method may maintain normal karyotyping, and will not form tumor when transplanted into mamma.

Abstract: A structure of scissors includes a body and two elastic elements. The body includes two blades at one side of a pivot for opening and closing with respect to each other and two holding sections at an opposite side of the pivot for driving movement of the blades about the pivot for opening and closing the scissors. Each of the two holding sections has two ends each forming a connection section to allow the two holding sections of the body to be connected to coupling sections formed on ends of the two elastic elements, whereby the two elastic elements and the two holding sections form finger holes for receiving fingers to be positioned therein for operating the two blades to open and close. As such, easy operation of the scissors can be realized for swinging and waving and reducing the reaction forces acting on the fingers.

Abstract: An integrated structure of an IGBT and a diode includes a plurality of doped cathode regions, and a method of forming the same is provided. The doped cathode regions are stacked in a semiconductor substrate, overlapping and contacting with each other. As compared with other doped cathode regions, the higher a doped cathode region is disposed, the larger implantation area the doped cathode region has. The doped cathode regions and the semiconductor substrate have different conductive types, and are applied as a cathode of the diode and a collector of the IGBT. The stacked doped cathode regions can increase the thinness of the cathode, and prevent the wafer from being overly thinned and broken.

Abstract: A semiconductor device having integrated MOSFET and Schottky diode includes a substrate having a MOSFET region and a Schottky diode region defined thereon; a plurality of first trenches formed in the MOSFET region; and a plurality of second trenches formed in the Schottky diode region. The first trenches respectively including a first insulating layer formed over the sidewalls and bottom of the first trench and a first conductive layer filling the first trench serve as a trenched gate of the trench MOSFET. The second trenches respectively include a second insulating layer formed over the sidewalls and bottom of the second trench and a second conductive layer filling the second trench. A depth and a width of the second trenches are larger than that of the first trenches; and a thickness of the second insulating layer is larger than that of the first insulating layer.

Abstract: A power semiconductor device includes a backside metal layer, a substrate formed on the backside metal layer, a semiconductor layer formed on the substrate, and a frontside metal layer. The semiconductor layer includes a first trench structure including a gate oxide layer formed around a first trench with poly-Si implant, a second trench structure including a gate oxide layer formed around a second trench with poly-Si implant, a p-base region formed between the first trench structure and the second trench structure, a plurality of n+ source region formed on the p-base region and between the first trench structure and the second trench structure, a dielectric layer formed on the first trench structure, the second trench structure, and the plurality of n+ source region. The frontside metal layer is formed on the semiconductor layer and filling gaps formed between the plurality of n+ source region on the p-base region.

Abstract: A method of forming a power device includes providing a substrate, a semiconductor layer having at least a trench and being disposed on the substrate, a gate insulating layer covering the semiconductor layer, and a conductive material disposed in the trench, performing an ion implantation process to from a body layer, performing a tilted ion implantation process to from a heavy doped region, forming a first dielectric layer overall, performing a chemical mechanical polishing process until the body layer disposed under the heavy doped region is exposed to form source regions on the opposite sides of the trench, and forming a source trace directly covering the source regions disposed on the opposite sides of the trench.

Abstract: A method of forming a power device includes providing a substrate, a semiconductor layer having at least a trench and being disposed on the substrate, a gate insulating layer covering the semiconductor layer, and a conductive material disposed in the trench, performing an ion implantation process to from a body layer, performing a tilted ion implantation process to from a heavy doped region, forming a first dielectric layer overall, performing a chemical mechanical polishing process until the body layer disposed under the heavy doped region is exposed to form source regions on the opposite sides of the trench, and forming a source trace directly covering the source regions disposed on the opposite sides of the trench.

Abstract: A method for promoting a differentiation of stem cells into insulin producing cells is provided. The method includes steps of suspending the stem cells in a first culture medium, aggregating the stem cells to form a cell pellet, and culturing the cell pellet in a second culture medium to promote the differentiation of the stem cells of the cell pellet into the insulin producing cells.

Abstract: The invention discloses a novel method of isolating mesenchymal stem cells (MSCs), which is characterized by purifying pluripotent MSCs based on physical characters and biological properties and without the uses of antibodies. The present invention also relates to the application of the isolated MSCs to serve as tissue replacement or gene therapy for tissues damaged by age, trauma, and disease.