Abstract: A semiconductor device includes a substrate, a semiconductor fin, a gate stack, and an epitaxy structure. The semiconductor fin is disposed in the substrate. A portion of the semiconductor fin is protruded from the substrate. The gate stack is disposed over the portion of the semiconductor fin protruded from the substrate. The epitaxy structure is disposed on the substrate and adjacent to the gate stack. The epitaxy structure has a top surface facing away the substrate, and the top surface has at least one curved portion having a radius of curvature ranging from about 5 nm to about 20 nm.

Abstract: The present invention relates to tackifier compounds and methods of using the same. In various embodiments, the present invention provides a tackifier compound including independently substituted or unsubstituted fused rings A and B each independently chosen from (C5-C10)cycloalkyl and (C2-C10)heterocyclyl. Fused ring A is substituted with (R1)1-8 and fused ring B is substituted with —(OC(O)R?C(O)R2)1-8. At each occurrence R? is independently chosen from (C2-C10)alkanylene, (C2-C10)alkenylene, (C2-C10)alkynylene, C5-C20(arylene), and (C1-C20)heteroarylene, wherein R? is unsubstituted or substituted. At each occurrence R1 is independently selected from —OH, —OR3, and —OC(O)R?C(O)R2. At each occurrence R2 is independently chosen from —OH, —OR3, —NH2, —NHR3, and —NR32. At each occurrence R3 is independently chosen from (C1-C10)alkanyl, (C2-C10)alkenyl, (C2-C10)alkynyl, C5-C20(aryl), and (C1-C20)heteroaryl, wherein R3 is unsubstituted or substituted.

Abstract: A semiconductor device includes a substrate having a fin projecting upwardly through an isolation structure over the substrate; a gate stack over the isolation structure and engaging the fin; and a gate spacer on a sidewall of the gate stack and in physical contact with the gate stack. The semiconductor device further includes a first dielectric layer vertically between the fin and the gate spacer and in physical contact with the sidewall of the gate stack, wherein the first dielectric layer has a laterally extending cavity. The semiconductor device further includes a second dielectric layer filling in the cavity, wherein the first and second dielectric layers include different materials.

Abstract: A control method of a portable electronic device (PED) includes following steps. A trigger event is received. Next, an accelerator detects a first behavior of the PED and produces a first signal. If the first signal satisfies a first preset condition, the accelerator detects a second behavior of the PED and produces a second signal. If the second signal satisfies a second preset condition, the PED performs an action.

Abstract: A toothbrush with a front-push replaceable brush head includes a handle portion, a handle front section connected to the handle portion and having a supporting platform, a front-push mechanism including a pulling arm pivotally attached to the handle portion and push and locking plates stacked together penetrating the handle front section, the pulling arm driving the push and locking plates to move; a brush head replaceably installed on the supporting platform, the locking plate locked onto the brush head and handle front section; the pulling arm is pulled and rotated to move the locking and push plates toward the brush head and to release the locking plate, handle front section and brush head from locking while the push plate pushing the brush head away from the supporting platform. Therefore, the release of locking and disengagement of the brush head are achieved simultaneously to facilitate operations of the toothbrush.

Abstract: A semiconductor device and method of forming the same are disclosed. The method includes receiving a substrate having an active fin, an oxide layer over the active fin, a dummy gate stack over the oxide layer, and a spacer feature over the oxide layer and on sidewalls of the dummy gate stack. The method further includes removing the dummy gate stack, resulting in a first trench; etching the oxide layer in the first trench, resulting in a cavity underneath the spacer feature; depositing a dielectric material in the first trench and in the cavity; and etching in the first trench so as to expose the active fin, leaving a first portion of the dielectric material in the cavity.

Abstract: The present invention relates to tackifier compounds and methods of using the same. In various embodiments, the present invention provides a tackifier compound including independently substituted or unsubstituted fused rings A and B each independently chosen from (C5-C10)cycloalkyl and (C2-C10)heterocyclyl. Fused ring A is substituted with (R1)1-8 and fused ring B is substituted with —(OC(O)R?C(O)R2)1-8. At each occurrence R? is independently chosen from (C2-C10)alkanylene, (C2-C10)alkenylene, (C2-C10)alkynylene, (C5-C20(arylene), and (C1-C20)heteroarylene, wherein R? is unsubstituted or substituted. At each occurrence R? is independently selected from —OH, —OR3, and —OC(O)R?C(O)R2. At each occurrence R2 is independently chosen from —OH, —OR3, —NH2, —NHR3, and —NR32. At each occurrence R3 is independently chosen from (C1-C10)alkanyl, (C2-C10)alkenyl, (C2-C10)alkynyl, C5-C20(aryl), and (C1-C20)heteroaryl, wherein R3 is unsubstituted or substituted.

Abstract: A toothbrush with a push-back replaceable brush head includes a handle portion, a handle front section moveable inserted into the handle portion and having a supporting platform, a push mechanism including a push plate and a locking plate stacked together and penetrating through the handle front section, the push plate and the locking plate secured onto the handle portion; a brush head replaceably installed on the supporting platform, another end of the locking plate locked onto the brush head and the handle front section; wherein the handle front section is pushed toward the handle portion to allow the locking plate, the handle front section and the brush head to release from locking while the push plate pushes the brush head away from the supporting platform. Therefore, the release of locking and disengagement of the brush head can be achieved at the same time to facilitate operations of the toothbrush.

Abstract: A locking structure for a replaceable toothbrush includes a locking plate and a brush head. An end portion of the locking plate includes elastic locking hooks, and the elastic locking hooks are arranged on the supporting platform. The brush head is replaceably installed on the supporting platform, and the brush head includes a brush head base and brush bristles. The brush head base includes a substrate and a surrounding plate extended from an edge of the substrate toward one side thereof, and the surrounding plate includes a locking slot for the elastic locking hook to lock thereon. The brush bristles are disposed on the substrate and extended away from the surrounding plate. Accordingly, the release of the locking and retrieval for disengagement of the brush head base are facilitated and the brush head base is firmly installed on the supporting platform.

Abstract: A toothbrush with a front-push replaceable brush head includes a handle portion, a handle front section connected to the handle portion and having a supporting platform, a front-push mechanism including a pulling arm pivotally attached to the handle portion and push and locking plates stacked together penetrating the handle front section, the pulling arm driving the push and locking plates to move; a brush head replaceably installed on the supporting platform, the locking plate locked onto the brush head and handle front section; the pulling arm is pulled and rotated to move the locking and push plates toward the brush head and to release the locking plate, handle front section and brush head from locking while the push plate pushing the brush head away from the supporting platform. Therefore, the release of locking and disengagement of the brush head are achieved simultaneously to facilitate operations of the toothbrush.

Abstract: The present invention relates to tackifier compounds and methods of using the same. In various embodiments, the present invention provides a tackifier compound including independently substituted or unsubstituted fused rings A and B each independently chosen from (C5-C10)cycloalkyl and (C2-C10)heterocyclyl. Fused ring A is substituted with (R1)1-8 and fused ring B is substituted with —(OC(O)R?C(O)R2)1-8. At each occurrence R? is independently chosen from (C2-C10)alkanylene, (C2-C10)alkenylene, (C2-C10)alkynylene, C5-C20(arylene), and (C1-C20)heteroarylene, wherein R? is unsubstituted or substituted. At each occurrence R1 is independently selected from —OH, —OR3, and —OC(O)R?C(O)R2. At each occurrence R2 is independently chosen from —OH, —OR3, —NH2, —NHR3, and —NR32. At each occurrence R3 is independently chosen from (C1-C10)alkanyl, (C2-C10)alkenyl, (C2-C10)alkynyl, C5-C20(aryl), and (C1-C20)heteroaryl, wherein R3 is unsubstituted or substituted.

Abstract: A semiconductor device includes a substrate, a semiconductor fin, a gate stack, and an epitaxy structure. The semiconductor fin is disposed in the substrate. A portion of the semiconductor fin is protruded from the substrate. The gate stack is disposed over the portion of the semiconductor fin protruded from the substrate. The epitaxy structure is disposed on the substrate and adjacent to the gate stack. The epitaxy structure has a top surface facing away the substrate, and the top surface has at least one curved portion having a radius of curvature ranging from about 5 nm to about 20 nm.

Abstract: The present invention is directed to polyisocyanates and polyurethanes derived therefrom. In various embodiments, the present invention provides polyisocyanates, methods of making the polyisocyanates from fused bicyclic alcohols, polyurethanes, and methods of making the polyurethanes from the polyisocyanates.

Abstract: A semiconductor device includes a substrate, a semiconductor fin, a gate stack, and an epitaxy structure. The semiconductor fin is disposed in the substrate. A portion of the semiconductor fin is protruded from the substrate. The gate stack is disposed over the portion of the semiconductor fin protruded from the substrate. The epitaxy structure is disposed on the substrate and adjacent to the gate stack. The epitaxy structure has a top surface facing away the substrate, and the top surface has at least one curved portion having a radius of curvature ranging from about 5 nm to about 20 nm.

Abstract: The present invention is directed to polyisocyanates and polyurethanes derived therefrom. In various embodiments, the present invention provides polyisocyanates, methods of making the polyisocyanates from fused bicyclic alcohols, polyurethanes, and methods of making the polyurethanes from the polyisocyanates.

Abstract: Various embodiments disclosed relate to polymers and methods of making the same. In various embodiments, the present invention provides a method of forming a polymer including subjecting a composition including a carboxylic acid having the structure (Rf—O)z1—Ra to conditions sufficient to form a polymer having the structure Reg—[O—Ra(O—Rb)z1-2—O—C(O)—R?(O—Rd)z2-1—C(O)]n—O—Ra(O—Rb)z1-2—O—Reg or a salt or ester thereof, wherein Ra, R? Rb, Rd, Rf, Reg, z1, z2, and n are as defined herein. In various embodiments, the polymer is a tackifier, a viscosifier, or a combination thereof.

Abstract: Various embodiments disclosed relate to aziridinated triglycerides and polymers formed therefrom. In various embodiments, the present invention provides an aziridinated triglyceride having the structure described herein. In various embodiments, the present invention provides a method of making the aziridinated triglyceride, a method of crosslinking the aziridinated triglyceride to form a polymer, the polymer formed from the aziridinated triglyceride, a triglyceride with at least one pendent unsaturated group that can be used to form the aziridinated triglyceride, and a method of making the triglyceride having at least one pendent unsaturated group.

Abstract: A semiconductor device includes a substrate, a semiconductor fin, a gate stack, and an epitaxy structure. The semiconductor fin is disposed in the substrate. A portion of the semiconductor fin is protruded from the substrate. The gate stack is disposed over the portion of the semiconductor fin protruded from the substrate. The epitaxy structure is disposed on the substrate and adjacent to the gate stack. The epitaxy structure has a top surface facing away the substrate, and the top surface has at least one curved portion having a radius of curvature ranging from about 5 nm to about 20 nm.

Abstract: An interface chip capable of accurate link detection. The interface chip mounted on a first electronic device has a link layer and a physical layer. The link layer outputs data to be transformed and transmitted to a second electronic device by the physical layer. The data transmitted from the second electronic device is received and transformed by the physical layer and then conveyed to the link layer. The link layer includes a state machine, which performs a state modification on the first electronic device to rescue the second electronic device from a trapped state for confirming a link between the first and second electronic devices, wherein data output by the link layer and transformed and transmitted to the second electronic device by the physical layer is changed according to the state modification.

Abstract: A semiconductor device and method of forming the same are disclosed. The method includes receiving a substrate having an active fin, an oxide layer over the active fin, a dummy gate stack over the oxide layer, and a spacer feature over the oxide layer and on sidewalls of the dummy gate stack. The method further includes removing the dummy gate stack, resulting in a first trench; etching the oxide layer in the first trench, resulting in a cavity underneath the spacer feature; depositing a dielectric material in the first trench and in the cavity; and etching in the first trench so as to expose the active fin, leaving a first portion of the dielectric material in the cavity.