Patents by Inventor Shih-Kuo Lai
Shih-Kuo Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11894487Abstract: A light-emitting device comprises a substrate; a first semiconductor layer formed on the substrate; a first patterned layer formed on the first semiconductor layer; and a second semiconductor layer formed on the first semiconductor layer, wherein the second semiconductor layer comprises a core layer comprising a group III or transition metal material formed along the first patterned layer.Type: GrantFiled: June 16, 2021Date of Patent: February 6, 2024Assignee: EPISTAR CORPORATIONInventors: Shih-Kuo Lai, Li-Shen Tang
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Publication number: 20240030383Abstract: A light-emitting element includes a substrate includes an upper surface; a plurality of protrusions formed on the upper surface, wherein the plurality of protrusions includes a height less than or equal to 1 ?m; and a stack structure formed on the substrate, wherein the stack structure includes a first doped semiconductor layer, a light-emitting layer, and a second doped semiconductor layer, wherein the stack structure includes a total thickness less than 4 ?m.Type: ApplicationFiled: July 24, 2023Publication date: January 25, 2024Inventors: Shih-Kuo LAI, Chao-Yi TSENG, Hai LIN, Zhong JU
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Publication number: 20210399170Abstract: A light-emitting device comprises a substrate; a first semiconductor layer formed on the substrate; a first patterned layer formed on the first semiconductor layer; and a second semiconductor layer formed on the first semiconductor layer, wherein the second semiconductor layer comprises a core layer comprising a group III or transition metal material formed along the first patterned layer.Type: ApplicationFiled: June 16, 2021Publication date: December 23, 2021Inventors: Shih-Kuo LAI, Li-Shen TANG
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Publication number: 20140017840Abstract: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.Type: ApplicationFiled: September 17, 2013Publication date: January 16, 2014Applicant: EPISTAR CORPORATIONInventors: Chen OU, Wen-Hsiang LIN, Shih-Kuo LAI
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Patent number: 8562738Abstract: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.Type: GrantFiled: February 25, 2013Date of Patent: October 22, 2013Assignee: Epistar CorporationInventors: Chen Ou, Wen-Hsiang Lin, Shih-Kuo Lai
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Patent number: 8536565Abstract: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.Type: GrantFiled: March 11, 2011Date of Patent: September 17, 2013Assignee: Epistar CorporationInventors: Chen Ou, Wen-Hsiang Lin, Shih-Kuo Lai
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Publication number: 20110156001Abstract: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.Type: ApplicationFiled: March 11, 2011Publication date: June 30, 2011Inventors: Chen OU, Wen-Hsiang Lin, Shih-Kuo Lai
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Patent number: 7928424Abstract: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.Type: GrantFiled: November 13, 2008Date of Patent: April 19, 2011Assignee: Epistar CorporationInventors: Chen Ou, Wen-Hsiang Lin, Shih-Kuo Lai
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Patent number: 7705344Abstract: A light-emitting device includes a substrate, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; wherein the active layer is a multi-quantum-well (MQW) active layer with a predetermined n-type doping profile. More specifically, the MQW active layer is doped with n-type dopants in the region near the p-type semiconductor layer and the n-type semiconductor layer, and the central region is not doped with the n-type dopants.Type: GrantFiled: April 8, 2008Date of Patent: April 27, 2010Assignee: Epistar CorporationInventors: Ting-Yang Lin, Shih-Kuo Lai, Chen Ou
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Publication number: 20090127581Abstract: A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.Type: ApplicationFiled: November 13, 2008Publication date: May 21, 2009Inventors: Chen Ou, Wen-Hsiang Lin, Shih-Kuo Lai
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Patent number: 7497905Abstract: Ternary nitride-based buffer layer of a nitride-based light-emitting device and related manufacturing method. The device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a ternary nitride-based buffer layer, a first conductivity type nitride-based semiconductor layer, a light-emitting layer, and a second conductivity type nitride-based semiconductor layer. The manufacturing method includes introducing a first reaction source containing a first group III element into a chamber at a first temperature that is subsequently deposited on the surface of the substrate, the melting point of said element being lower than the first temperature. Introducing a second reaction source containing a second group III element and a third reaction source containing a nitrogen element into the chamber at a second temperature, no lower than the melting point of the first group III element, for forming a ternary nitride-based buffer layer with the first group III element.Type: GrantFiled: September 24, 2004Date of Patent: March 3, 2009Assignee: Epistar CorporationInventors: Chen Ou, Wen-Hsiang Lin, Shih-Kuo Lai
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Publication number: 20080246018Abstract: A light-emitting device includes a substrate, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer; wherein the active layer is a multi-quantum-well (MQW) active layer with a predetermined n-type doping profile. More specifically, the MQW active layer is doped with n-type dopants in the region near the p-type semiconductor layer and the n-type semiconductor layer, and the central region is not doped with the n-type dopants.Type: ApplicationFiled: April 8, 2008Publication date: October 9, 2008Applicant: EPISTAR CORPORATIONInventors: Ting-Yang Lin, Shih-Kuo Lai, Chen Ou
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Patent number: 7385226Abstract: A light-emitting device includes a substrate, a first nitride semiconductor stack formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor stack, a second nitride semiconductor stack formed on the nitride light-emitting layer, and a first transparent conductive oxide layer formed on the second nitride semiconductor stack. The second nitride semiconductor stack includes a plurality of hexagonal-pyramid cavities formed in an upper surface of the second nitride semiconductor stack. The plurality of hexagonal-pyramid cavities of the second nitride semiconductor stack are filled with the first transparent conductive oxide layer, and a low-resistance ohmic contact is generated at the inner surfaces of the plurality of hexagonal-pyramid cavities so as to decrease the operation voltage and improve light-emitting efficiency of the light-emitting device.Type: GrantFiled: June 21, 2005Date of Patent: June 10, 2008Assignee: Epistar CorporationInventors: Chen Ou, Ting-Yang Lin, Shih-Kuo Lai
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Patent number: 7355210Abstract: A high-efficiency light-emitting element includes a substrate, a first nitride semiconductor layer formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor layer, and a second nitride semiconductor layer formed on the nitride light-emitting layer including a plurality of hexagonal-pyramid cavities on the surface of the second nitride semiconductor layer opposite to the nitride light-emitting layer.Type: GrantFiled: February 21, 2005Date of Patent: April 8, 2008Assignee: Epistar CorporationInventors: Chen Ou, Ting-Yang Lin, Jia-Rong Chang, Shih-Kuo Lai
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Publication number: 20080054278Abstract: A light-emitting device includes a substrate, a first nitride semiconductor stack formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor stack, a second nitride semiconductor stack formed on the nitride light-emitting layer, and a first transparent conductive oxide layer formed on the second nitride semiconductor stack. The second nitride semiconductor stack includes a plurality of hexagonal-pyramid cavities formed in an upper surface of the second nitride semiconductor stack. The plurality of hexagonal-pyramid cavities of the second nitride semiconductor stack are filled with the first transparent conductive oxide layer, and a low-resistance ohmic contact is generated at the inner surfaces of the plurality of hexagonal-pyramid cavities so as to decrease the operation voltage and improve light-emitting efficiency of the light-emitting device.Type: ApplicationFiled: June 21, 2005Publication date: March 6, 2008Inventors: Chen Ou, Ting-Yang Lin, Shih-Kuo Lai
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Publication number: 20050285136Abstract: A light-emitting device includes a substrate, a first nitride semiconductor stack formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor stack, a second nitride semiconductor stack formed on the nitride light-emitting layer, and a first transparent conductive oxide layer formed on the second nitride semiconductor stack. The second nitride semiconductor stack includes a plurality of hexagonal-pyramid cavities formed in an upper surface of the second nitride semiconductor stack. The plurality of hexagonal-pyramid cavities of the second nitride semiconductor stack are filled with the first transparent conductive oxide layer, and a low-resistance ohmic contact is generated at the inner surfaces of the plurality of hexagonal-pyramid cavities so as to decrease the operation voltage and improve light-emitting efficiency of the light-emitting device.Type: ApplicationFiled: June 21, 2005Publication date: December 29, 2005Inventors: Chen Ou, Ting-Yang Lin, Shih-Kuo Lai
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Publication number: 20050221520Abstract: Ternary nitride-based buffer layer of a nitride-based light-emitting device and related manufacturing method. The device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a ternary nitride-based buffer layer, a first conductivity type nitride-based semiconductor layer, a light-emitting layer, and a second conductivity type nitride-based semiconductor layer. The manufacturing method includes introducing a first reaction source containing a first group III element into a chamber at a first temperature that is subsequently deposited on the surface of the substrate, the melting point of said element being lower than the first temperature. Introducing a second reaction source containing a second group III element and a third reaction source containing a nitrogen element into the chamber at a second temperature, no lower than the melting point of the first group III element, for forming a ternary nitride-based buffer layer with the first group III element.Type: ApplicationFiled: September 24, 2004Publication date: October 6, 2005Inventors: Chen Ou, Wen-Hsiang Lin, Shih-Kuo Lai
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Publication number: 20050211995Abstract: A high-efficiency light-emitting element includes a substrate, a first nitride semiconductor layer formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor layer, and a second nitride semiconductor layer formed on the nitride light-emitting layer including a plurality of hexagonal-pyramid cavities on the surface of the second nitride semiconductor layer opposite to the nitride light-emitting layer.Type: ApplicationFiled: February 21, 2005Publication date: September 29, 2005Inventors: Chen Ou, Ting-Yang Lin, Jia-Rong Chang, Shih-Kuo Lai