Patents by Inventor Shih Pei Chou
Shih Pei Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20150279891Abstract: An image sensor includes a sensor portion and an ASIC portion bonded to the sensor portion. The sensor portion includes a first substrate having radiation-sensing pixels, a first interconnect structure, a first isolation layer, and a first dielectric layer. The ASIC portion includes a second substrate, a second isolation layer, and a second dielectric layer. The material compositions of the first and second isolation layers and the first and second dielectric layers are configured such that the first and second isolation layers may serve as barrier layers to prevent copper diffusion into oxide. The first and second isolation layers may also serve as etching-stop layers in the formation of the image sensor.Type: ApplicationFiled: March 28, 2014Publication date: October 1, 2015Inventors: U-Ting Chen, Shu-Ting Tsai, Cheng-Ying Ho, Tzu-Hsuan Hsu, Shih Pei Chou
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Publication number: 20150255400Abstract: A method of fabrication of alignment marks for a non-STI CMOS image sensor is introduced. In some embodiments, zero layer alignment marks and active are alignment marks may be simultaneously formed on a wafer. A substrate of the wafer may be patterned to form one or more recesses in the substrate. The recesses may be filled with a dielectric material using, for example, a field oxidation method and/or suitable deposition methods. Structures formed by the above process may correspond to elements of the zero layer alignment marks and/or to elements the active area alignment marks.Type: ApplicationFiled: March 10, 2014Publication date: September 10, 2015Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Hsien Chou, Sheng-Chau Chen, Chun-Wei Chang, Kai-Chun Hsu, Chih-Yu Lai, Wei-Cheng Hsu, Hsiao-Hui Tseng, Shih Pei Chou, Shyh-Fann Ting, Tzu-Hsuan Hsu, Ching-Chun Wang, Yeur-Luen Tu, Dun-Nian Yaung
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Patent number: 9076715Abstract: A structure includes a first chip having a first substrate, and first dielectric layers underlying the first substrate, with a first metal pad in the first dielectric layers. A second chip includes a second substrate, second dielectric layers over the second substrate and bonded to the first dielectric layers, and a second metal pad in the second dielectric layers. A conductive plug includes a first portion extending from a top surface of the first substrate to a top surface of the first metal pad, and a second portion extending from the top surface of the first metal pad to a top surface of the second metal pad. An edge of the second portion is in physical contact with a sidewall of the first metal pad. A dielectric layer spaces the first portion of the conductive plug from the first plurality of dielectric layers.Type: GrantFiled: November 26, 2013Date of Patent: July 7, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shu-Ting Tsai, Dun-Nian Yaung, Jen-Cheng Liu, Shih Pei Chou, U-Ting Chen, Chia-Chieh Lin
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Publication number: 20150179612Abstract: An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two integrated circuits are bonded together. A first opening is formed through one of the substrates. A multi-layer dielectric film is formed along sidewalls of the first opening. One or more etch processes form one or more spacer-shaped structures along sidewalls of the first opening. A second opening is formed extending from the first opening to pads in the integrated circuits. A dielectric liner is formed, and the opening is filled with a conductive material to form a conductive plug.Type: ApplicationFiled: December 19, 2013Publication date: June 25, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shu-Ting Tsai, Dun-Nian Yaung, Jen-Cheng Liu, U-Ting Chen, Shih Pei Chou
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Publication number: 20150171050Abstract: A method embodiment includes patterning an opening through a layer at a surface of a device die. The method further includes forming a liner on sidewalls of the opening, patterning the device die to extend the opening further into the device die. After patterning the device die, the liner is removed. A conductive pad is formed in the device die by filling the opening with a conductive material.Type: ApplicationFiled: December 18, 2013Publication date: June 18, 2015Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Sheng-Chau Chen, Shih Pei Chou, Yen-Chang Chu, Cheng-Hsien Chou, Chih-Hui Huang, Yeur-Luen Tu
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Patent number: 9040891Abstract: A method of forming of an image sensor device includes a substrate having a pixel region and a periphery region. A plurality of first trenches is etched in the periphery region. Each of the first trenches has a depth D1. A mask layer is formed over the substrate. The mask layer has a plurality of openings in the pixel region. A spacer is formed in an interior surface of each opening. A plurality of second trenches is etched through each opening having the spacer in the pixel region. Each of the second trenches has a depth D2. The depth D1 is larger than the depth D2.Type: GrantFiled: June 8, 2012Date of Patent: May 26, 2015Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: U-Ting Chen, Dun-Nian Yaung, Jen-Cheng Liu, Yu-Hao Shih, Chih-Chien Wang, Shih Pei Chou, Wei-Tung Huang, Cheng-Ta Wu
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Patent number: 9006080Abstract: An integrated circuit device incorporating a plurality of isolation trench structures configured for disparate applications and a method of forming the integrated circuit are disclosed. In an exemplary embodiment, a substrate having a first region and a second region is received. A first isolation trench is formed in the first region, and a second isolation trench is formed in the second region. A first liner layer is formed in the first isolation trench, and a second liner layer is formed in the second isolation trench. The second liner layer has a physical characteristic that is different from a corresponding physical characteristic of the first liner layer. An implantation procedure is performed on the second isolation trench and the second liner layer formed therein. The physical characteristic of the second liner layer may be selected to enhance an implantation depth or an implantation uniformity compared to the first liner layer.Type: GrantFiled: March 12, 2013Date of Patent: April 14, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Hsien Chou, Min-Feng Kao, Feng-Chi Hung, Shih Pei Chou, Jiech-Fun Lu, Yeur-Luen Tu, Chia-Shiung Tsai
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Patent number: 8987033Abstract: A method includes forming a blocking layer over a substrate, and etching the blocking layer to form a trench in the blocking layer. A dielectric layer is formed, wherein the dielectric layer comprises a first portion over the blocking layer, and a second portion in the trench. After the step of forming the dielectric layer, an implantation is performed to implant an impurity into the substrate to form a deep well region. After the implantation, the dielectric layer and the blocking layer are removed.Type: GrantFiled: August 2, 2011Date of Patent: March 24, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Chung Su, Shih-Chang Liu, Shih Pei Chou, Chia-Shiung Tsai, Chun-Tsung Kuo, Wen-I Hsu, Yi-Shin Chu
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Publication number: 20150069619Abstract: An interconnect apparatus and a method of forming the interconnect apparatus is provided. Two substrates, such as wafers, dies, or a wafer and a die, are bonded together. A first mask is used to form a first opening extending partially to an interconnect formed on the first wafer. A dielectric liner is formed, and then another etch process is performed using the same mask. The etch process continues to expose interconnects formed on the first substrate and the second substrate. The opening is filled with a conductive material to form a conductive plug.Type: ApplicationFiled: September 6, 2013Publication date: March 12, 2015Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih Pei Chou, Hung-Wen Hsu, Ching-Chung Su, Chun-Han Tsao, Lin Chia-Chieh, Shu-Ting Tsai, Jiech-Fun Lu, Shih-Chang Liu, Yeur-Luen Tu, Chia-Shiung Tsai
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Publication number: 20140264709Abstract: A structure includes a first chip having a first substrate, and first dielectric layers underlying the first substrate, with a first metal pad in the first dielectric layers. A second chip includes a second substrate, second dielectric layers over the second substrate and bonded to the first dielectric layers, and a second metal pad in the second dielectric layers. A conductive plug includes a first portion extending from a top surface of the first substrate to a top surface of the first metal pad, and a second portion extending from the top surface of the first metal pad to a top surface of the second metal pad. An edge of the second portion is in physical contact with a sidewall of the first metal pad. A dielectric layer spaces the first portion of the conductive plug from the first plurality of dielectric layers.Type: ApplicationFiled: November 26, 2013Publication date: September 18, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shu-Ting Tsai, Dun-Nian Yaung, Jen-Cheng Liu, Shih Pei Chou, U-Ting Chen, Chia-Chieh Lin
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Publication number: 20140264947Abstract: A method comprises bonding a first chip on a second chip, depositing a first hard mask layer over a non-bonding side of the first chip, depositing a second hard mask layer over the first hard mask layer, etching a first substrate of the first semiconductor chip using the second hard mask layer as a first etching mask and etching the IMD layers of the first chip and the second chip using the first hard mask layer as a second etching mask.Type: ApplicationFiled: May 9, 2013Publication date: September 18, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Jeng-Shyan Lin, Shu-Ting Tsai, Dun-Nian Yaung, Jen-Cheng Liu, Feng-Chi Hung, Shih Pei Chou, Min-Feng Kao, Szu-Ying Chen
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Publication number: 20140264929Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.Type: ApplicationFiled: July 8, 2013Publication date: September 18, 2014Inventors: Shu-Ting Tsai, Jeng-Shyan Lin, Dun-Nian Yaung, Jen-Cheng Liu, Feng-Chi Hung, Chih-Hui Huang, Sheng-Chau Chen, Shih-Pei Chou, Chia-Chieh Lin
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Patent number: 8610227Abstract: Provided is an image sensor device. The image sensor device includes a pixel formed in a substrate. The image sensor device includes a first micro-lens embedded in a transparent layer over the substrate. The first micro-lens has a first upper surface that has an angular tip. The image sensor device includes a color filter that is located over the transparent layer. The image sensor device includes a second micro-lens that is formed over the color filter. The second micro-lens has a second upper surface that has an approximately rounded profile. The pixel, the first micro-lens, the color filter, and the second micro-lens are all at least partially aligned with one another in a vertical direction.Type: GrantFiled: October 13, 2010Date of Patent: December 17, 2013Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih Pei Chou, Shih-Chang Liu, Yeur-Luen Tu, Chia-Shiung Tsai
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Publication number: 20130327921Abstract: A method of forming of an image sensor device includes a substrate having a pixel region and a periphery region. A plurality of first trenches is etched in the periphery region. Each of the first trenches has a depth D1. A mask layer is formed over the substrate. The mask layer has a plurality of openings in the pixel region. A spacer is formed in an interior surface of each opening. A plurality of second trenches is etched through each opening having the spacer in the pixel region. Each of the second trenches has a depth D2. The depth D1 is larger than the depth D2.Type: ApplicationFiled: June 8, 2012Publication date: December 12, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: U-Ting CHEN, Dun-Nian YAUNG, Jen-Cheng LIU, Yu-Hao SHIH, Chih-Chien WANG, Shih Pei CHOU, Wei-Tung HUANG, Cheng-Ta WU
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Patent number: 8502389Abstract: An integrated circuit structure includes an interconnect structure that includes a plurality of metal layers, wherein the interconnect structure is under a semiconductor substrate. A metal pad is formed in one of the plurality of metal layers. A dielectric pad extends from a bottom surface of the semiconductor substrate up into the semiconductor substrate. An opening extends from a top surface of the semiconductor substrate down to penetrate through the semiconductor substrate and the dielectric pad. An edge of the semiconductor substrate in the opening is vertically aligned to an edge of the dielectric pad in the opening. The opening stops on a top surface of the metal pad. A dielectric spacer is disposed in the opening, wherein the dielectric spacer is formed on the edge of the semiconductor substrate and the edge of the dielectric pad.Type: GrantFiled: August 8, 2011Date of Patent: August 6, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Ying Ho, Dun-Nian Yaung, Jen-Cheng Liu, Jeng-Shyan Lin, Wen-De Wang, Shih Pei Chou
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Publication number: 20130037958Abstract: An integrated circuit structure includes an interconnect structure that includes a plurality of metal layers, wherein the interconnect structure is under a semiconductor substrate. A metal pad is formed in one of the plurality of metal layers. A dielectric pad extends from a bottom surface of the semiconductor substrate up into the semiconductor substrate. An opening extends from a top surface of the semiconductor substrate down to penetrate through the semiconductor substrate and the dielectric pad. An edge of the semiconductor substrate in the opening is vertically aligned to an edge of the dielectric pad in the opening. The opening stops on a top surface of the metal pad. A dielectric spacer is disposed in the opening, wherein the dielectric spacer is formed on the edge of the semiconductor substrate and the edge of the dielectric pad.Type: ApplicationFiled: August 8, 2011Publication date: February 14, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Cheng-Ying Ho, Dun-Nian Yaung, Jen-Cheng Liu, Jeng-Shyan Lin, Wen-De Wang, Shih Pei Chou
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Publication number: 20130034929Abstract: A method includes forming a blocking layer over a substrate, and etching the blocking layer to form a trench in the blocking layer. A dielectric layer is formed, wherein the dielectric layer comprises a first portion over the blocking layer, and a second portion in the trench. After the step of forming the dielectric layer, an implantation is performed to implant an impurity into the substrate to form a deep well region. After the implantation, the dielectric layer and the blocking layer are removed.Type: ApplicationFiled: August 2, 2011Publication date: February 7, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ching-Chung Su, Shih-Chang Liu, Shih Pei Chou, Chia-Shiung Tsai, Chun-Tsung Kuo, Wen-I Hsu, Yi-Shin Chu
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Publication number: 20120091549Abstract: Provided is an image sensor device. The image sensor device includes a pixel formed in a substrate. The image sensor device includes a first micro-lens embedded in a transparent layer over the substrate. The first micro-lens has a first upper surface that has an angular tip. The image sensor device includes a color filter that is located over the transparent layer. The image sensor device includes a second micro-lens that is formed over the color filter. The second micro-lens has a second upper surface that has an approximately rounded profile. The pixel, the first micro-lens, the color filter, and the second micro-lens are all at least partially aligned with one another in a vertical direction.Type: ApplicationFiled: October 13, 2010Publication date: April 19, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shih Pei Chou, Shih-Chang Liu, Yeur-Luen Tu, Chia-Shiung Tsai