Patents by Inventor Shih-Wei Liang
Shih-Wei Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10971463Abstract: A semiconductor device includes a first carrier including a first pad, a second carrier including a second pad disposed opposite to the first pad, a joint coupled with and standing on the first pad, a joint encapsulating the post and bonding the first pad with the second pad, a first entire contact interface between the first pad and the joint, a second entire contact interface between the first pad and the post, and a third entire contact interface between the joint and the second pad. The first entire contact interface, the second entire contact interface and the third entire contact interface are flat surfaces. A distance between the first entire contact interface and the third entire contact interface is equal to a distance between the second entire contact interface and the third entire contact interface. The second entire contact interface is a continuous surface.Type: GrantFiled: October 30, 2017Date of Patent: April 6, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chun-Lin Lu, Kai-Chiang Wu, Ming-Kai Liu, Yen-Ping Wang, Shih-Wei Liang, Ching-Feng Yang, Chia-Chun Miao, Hao-Yi Tsai
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Publication number: 20210091036Abstract: Semiconductor device packages may include a first semiconductor device over a substrate and a second semiconductor device over the first semiconductor device. An active surface of the second semiconductor device may face away from the substrate. Electrical interconnections may extend from bond pads of the second semiconductor device, along surfaces of the second semiconductor device, first semiconductor device, and substrate to pads of routing members of the substrate. The electrical interconnections may include conductors in contact with the bond pads and the routing members and a dielectric material interposed between the conductors and the first semiconductor device, the second semiconductor device and the substrate between the bond pads and the pad of the routing members. An encapsulant distinct from the dielectric material may cover the electrical interconnections, the first semiconductor device, the second semiconductor device, and an upper surface of the substrate.Type: ApplicationFiled: September 23, 2019Publication date: March 25, 2021Inventors: Po Chih Yang, Yu Jen Chen, Po Chen Kuo, Shih Wei Liang
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Patent number: 10867957Abstract: Embodiments of mechanisms for forming a package structure are provided. The package structure includes a semiconductor die and a substrate. The package structure includes a pillar bump and an elongated solder bump bonded to the semiconductor die and the substrate. A height of the elongated solder bump is substantially equal to a height of the pillar bump. The elongated solder bump has a first width, at a first horizontal plane passing through an upper end of a sidewall surface of the elongated solder bump, and a second width, at a second horizontal plane passing through a midpoint of the sidewall surface. A ratio of the second width to the first width is in a range from about 0.5 to about 1.1.Type: GrantFiled: December 18, 2018Date of Patent: December 15, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Lin Lu, Kai-Chiang Wu, Ming-Kai Liu, Yen-Ping Wang, Shih-Wei Liang, Ching-Feng Yang, Chia-Chun Miao, Hung-Jen Lin
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Publication number: 20200118947Abstract: An integrated circuit structure includes a substrate, a metal pad over the substrate, a passivation layer having a portion over the metal pad, and a polymer layer over the passivation layer. A Post-Passivation Interconnect (PPI) has a portion over the polymer layer, wherein the PPI is electrically coupled to the metal pad. The integrated circuit structure further includes a first solder region over and electrically coupled to a portion of the PPI, a second solder region neighboring the first solder region, a first coating material on a surface of the first solder region, and a second coating material on a surface of the second solder region. The first coating material and the second coating material encircle the first solder region and the second solder region, respectively. The first coating material is spaced apart from the second coating material.Type: ApplicationFiled: December 13, 2019Publication date: April 16, 2020Inventors: Chia-Chun Miao, Shih-Wei Liang, Kai-Chiang Wu
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Publication number: 20200066635Abstract: A method of making a semiconductor device, includes: forming a first molding layer on a substrate; forming a first plurality of vias in the first molding layer; forming a first conductive line over the first molding layer, wherein the first conductive line is laterally disposed over the first molding layer and a first end of the conductive line aligns with and is electrically coupled to a first via of the first plurality of vias; forming a second molding layer above the first molding layer; and forming a second plurality of vias in the second molding layer, wherein a second via of the second plurality of vias aligns with and is electrically coupled to a second end of the conductive line, and wherein the second plurality of vias, the conductive line, and the first plurality of vias are electrically coupled to one another.Type: ApplicationFiled: November 1, 2019Publication date: February 27, 2020Inventors: Shih-Wei LIANG, Hung-Yi Kuo, Hao-Yi Tsai, Ming-Hung Tseng, Hsien-Ming Tu
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Publication number: 20200027803Abstract: An interposer may comprise a metal layer above a substrate. A dam or a plurality of dams may be formed above the metal layer. A dam surrounds an area of a size larger than a size of a die which may be connected to a contact pad above the metal layer within the area. A dam may comprise a conductive material, or a non-conductive material, or both. An underfill may be formed under the die, above the metal layer, and contained within the area surrounded by the dam, so that no underfill may overflow outside the area surrounded by the dam. Additional package may be placed above the die connected to the interposer to form a package-on-package structure.Type: ApplicationFiled: September 30, 2019Publication date: January 23, 2020Inventors: Chun-Lin Lu, Kai-Chiang Wu, Yen-Ping Wang, Shih-Wei Liang, Ching-Feng Yang
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Patent number: 10522437Abstract: An interposer may comprise a metal layer above a substrate. A dam or a plurality of dams may be formed above the metal layer. A dam surrounds an area of a size larger than a size of a die which may be connected to a contact pad above the metal layer within the area. A dam may comprise a conductive material, or a non-conductive material, or both. An underfill may be formed under the die, above the metal layer, and contained within the area surrounded by the dam, so that no underfill may overflow outside the area surrounded by the dam. Additional package may be placed above the die connected to the interposer to form a package-on-package structure.Type: GrantFiled: April 20, 2018Date of Patent: December 31, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Lin Lu, Kai-Chiang Wu, Yen-Ping Wang, Shih-Wei Liang, Ching-Feng Yang
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Patent number: 10510689Abstract: An integrated circuit structure includes a substrate, a metal pad over the substrate, a passivation layer having a portion over the metal pad, and a polymer layer over the passivation layer. A Post-Passivation Interconnect (PPI) has a portion over the polymer layer, wherein the PPI is electrically coupled to the metal pad. The integrated circuit structure further includes a first solder region over and electrically coupled to a portion of the PPI, a second solder region neighboring the first solder region, a first coating material on a surface of the first solder region, and a second coating material on a surface of the second solder region. The first coating material and the second coating material encircle the first solder region and the second solder region, respectively. The first coating material is spaced apart from the second coating material.Type: GrantFiled: July 31, 2018Date of Patent: December 17, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Chun Miao, Shih-Wei Liang, Kai-Chiang Wu
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Patent number: 10497646Abstract: A semiconductor device includes a first molding layer; a second molding layer formed over the first molding layer; a first conductive coil including a first portion continuously formed in the first molding layer and a second portion continuously formed in the second molding layer, wherein the first and the second portions are laterally displaced from each other; and a second conductive coil formed in the second molding layer, wherein the second conductive coil is interweaved with the second portion of the first conductive coil in the second molding layer.Type: GrantFiled: July 28, 2016Date of Patent: December 3, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Wei Liang, Hung-Yi Kuo, Hao-Yi Tsai, Ming-Hung Tseng, Hsien-Ming Tu
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Publication number: 20190333841Abstract: A structure includes a die substrate; a passivation layer on the die substrate; first and second interconnect structures on the passivation layer; and a barrier on the passivation layer, at least one of the first or second interconnect structures, or a combination thereof. The first and second interconnect structures comprise first and second via portions through the passivation layer to first and second conductive features of the die substrate, respectively. The first and second interconnect structures further comprise first and second pads, respectively, and first and second transition elements on a surface of the passivation layer between the first and second via portion and the first and second pad, respectively. The barrier is disposed between the first pad and the second pad. The barrier does not fully encircle at least one of the first pad or the second pad.Type: ApplicationFiled: July 8, 2019Publication date: October 31, 2019Inventors: Chia-Chun Miao, Shih-Wei Liang, Kai-Chiang Wu
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Patent number: 10347563Abstract: A structure includes a die substrate; a passivation layer on the die substrate; first and second interconnect structures on the passivation layer; and a barrier on the passivation layer, at least one of the first or second interconnect structures, or a combination thereof. The first and second interconnect structures comprise first and second via portions through the passivation layer to first and second conductive features of the die substrate, respectively. The first and second interconnect structures further comprise first and second pads, respectively, and first and second transition elements on a surface of the passivation layer between the first and second via portion and the first and second pad, respectively. The barrier is disposed between the first pad and the second pad. The barrier does not fully encircle at least one of the first pad or the second pad.Type: GrantFiled: May 22, 2017Date of Patent: July 9, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Chun Miao, Kai-Chiang Wu, Shih-Wei Liang
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Patent number: 10312209Abstract: The present disclosure provides a semiconductor package, which includes a substrate, a passivation layer, a post-passivation interconnect (PPI) having a top surface; and a conductive structure. The top surface of the PPI includes a first region receiving the conductive structure, and a second region surrounding the first region. The second region includes metal derivative transformed from materials made of the first region. The present disclosure provide a method of manufacturing a semiconductor package, including forming a first flux layer covering a portion of a top surface of a PPI; transforming a portion of the top surface of the PPI uncovered by the first flux layer into a metal derivative layer; removing the first flux layer; forming a second flux layer on the first region of the PPI; dropping a solder ball on the flux layer; and forming electrical connection between the solder ball and the PPI.Type: GrantFiled: April 12, 2018Date of Patent: June 4, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chao-Wen Shih, Kai-Chiang Wu, Ching-Feng Yang, Ming-Kai Liu, Shih-Wei Liang, Yen-Ping Wang
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Publication number: 20190123017Abstract: Embodiments of mechanisms for forming a package structure are provided. The package structure includes a semiconductor die and a substrate. The package structure includes a pillar bump and an elongated solder bump bonded to the semiconductor die and the substrate. A height of the elongated solder bump is substantially equal to a height of the pillar bump. The elongated solder bump has a first width, at a first horizontal plane passing through an upper end of a sidewall surface of the elongated solder bump, and a second width, at a second horizontal plane passing through a midpoint of the sidewall surface. A ratio of the second width to the first width is in a range from about 0.5 to about 1.1.Type: ApplicationFiled: December 18, 2018Publication date: April 25, 2019Inventors: Chun-Lin Lu, Kai-Chiang Wu, Ming-Kai Liu, Yen-Ping Wang, Shih-Wei Liang, Ching-Feng Yang, Chia-Chun Miao, Hung-Jen Lin
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Patent number: 10269588Abstract: An integrated circuit includes a substrate having at least one depression on a top surface. At least one solder bump is disposed over the substrate. A die is disposed over the at least one solder bump and electrically connected with the substrate through the at least one solder bump. An underfill surrounds the at least one solder bump and is formed between the substrate and the die. The at least one depression is disposed around the underfill to keep any spillover from the underfill in the at least one depression.Type: GrantFiled: May 11, 2016Date of Patent: April 23, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Wei Liang, Chun-Lin Lu, Kai-Chiang Wu, Ching-Feng Yang, Ming-Kai Liu, Chia-Chun Miao, Yen-Ping Wang
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Patent number: 10269737Abstract: A method of manufacturing a semiconductor structure include: providing a die including a die pad disposed over the die; disposing a conductive member over the die pad of the die; forming a molding surrounding the die and the conductive member; disposing a dielectric layer over the molding, the die and the conductive member; and forming an interconnect structure including a land portion and a plurality of via portions. The land portion is disposed over the dielectric layer, the plurality of via portions are disposed over the conductive member and protruded from the land portion to the conductive member through the dielectric layer, and each of the plurality of via portions at least partially contacts with the conductive member.Type: GrantFiled: October 6, 2017Date of Patent: April 23, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chang-Pin Huang, Hsien-Ming Tu, Ching-Jung Yang, Shih-Wei Liang, Hung-Yi Kuo, Yu-Chia Lai, Hao-Yi Tsai, Chung-Shi Liu, Chen-Hua Yu
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Publication number: 20190057946Abstract: An integrated circuit structure includes a metal pad, a passivation layer including a portion over the metal pad, a first polymer layer over the passivation layer, and a first Post-Passivation Interconnect (PPI) extending into to the first polymer layer. The first PPI is electrically connected to the metal pad. A dummy metal pad is located in the first polymer layer. A second polymer layer is overlying the first polymer layer, the dummy metal pad, and the first PPI. An Under-Bump-Metallurgy (UBM) extends into the second polymer layer to electrically couple to the dummy metal pad.Type: ApplicationFiled: October 22, 2018Publication date: February 21, 2019Inventors: Hao-Hsiang Chuang, Shih-Wei Liang, Ching-Feng Yang, Kai-Chiang Wu, Hao-Yi Tsai, Chuei-Tang Wang, Chen-Hua Yu
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Patent number: 10163846Abstract: Embodiments of mechanisms for forming a package structure are provided. The package structure includes a semiconductor die and a substrate. The package structure includes a pillar bump and an elongated solder bump bonded to the semiconductor die and the substrate. A height of the elongated solder bump is substantially equal to a height of the pillar bump. The elongated solder bump has a first width, at a first horizontal plane passing through an upper end of a sidewall surface of the elongated solder bump, and a second width, at a second horizontal plane passing through a midpoint of the sidewall surface. A ratio of the second width to the first width is in a range from about 0.5 to about 1.1.Type: GrantFiled: January 30, 2017Date of Patent: December 25, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Lin Lu, Kai-Chiang Wu, Ming-Kai Liu, Yen-Ping Wang, Shih-Wei Liang, Ching-Feng Yang, Chia-Chun Miao, Hung-Jen Lin
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Patent number: 10157900Abstract: A semiconductor structure includes a three dimensional stack including a first semiconductor die and a second semiconductor die. The second semiconductor die is connected with the first semiconductor die with a bump between the first semiconductor die and the second semiconductor die. The semiconductor structure includes a molding compound between the first semiconductor die and the second semiconductor die. A first portion of a metal structure over a surface of the three dimensional stack and contacting a backside of the second semiconductor die and a second portion of the metal structure over the surface of the three dimensional stack and configured for electrically connecting the three dimensional stack with an external electronic device.Type: GrantFiled: December 15, 2016Date of Patent: December 18, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Wei Liang, Hsin-Yu Pan, Kai-Chiang Wu, Ching-Feng Yang, Ming-Kai Liu, Chia-Chun Miao
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Publication number: 20180337144Abstract: An integrated circuit structure includes a substrate, a metal pad over the substrate, a passivation layer having a portion over the metal pad, and a polymer layer over the passivation layer. A Post-Passivation Interconnect (PPI) has a portion over the polymer layer, wherein the PPI is electrically coupled to the metal pad. The integrated circuit structure further includes a first solder region over and electrically coupled to a portion of the PPI, a second solder region neighboring the first solder region, a first coating material on a surface of the first solder region, and a second coating material on a surface of the second solder region. The first coating material and the second coating material encircle the first solder region and the second solder region, respectively. The first coating material is spaced apart from the second coating material.Type: ApplicationFiled: July 31, 2018Publication date: November 22, 2018Inventors: Chia-Chun Miao, Shih-Wei Liang, Kai-Chiang Wu
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Patent number: 10109605Abstract: An integrated circuit structure includes a metal pad, a passivation layer including a portion over the metal pad, a first polymer layer over the passivation layer, and a first Post-Passivation Interconnect (PPI) extending into to the first polymer layer. The first PPI is electrically connected to the metal pad. A dummy metal pad is located in the first polymer layer. A second polymer layer is overlying the first polymer layer, the dummy metal pad, and the first PPI. An Under-Bump-Metallurgy (UBM) extends into the second polymer layer to electrically couple to the dummy metal pad.Type: GrantFiled: June 17, 2015Date of Patent: October 23, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hao-Hsiang Chuang, Shih-Wei Liang, Ching-Feng Yang, Kai-Chiang Wu, Hao-Yi Tsai, Chuei-Tang Wang, Chen-Hua Yu