Abstract: Semiconductor structures are provided. The semiconductor structure includes a substrate and a metal gate structure formed over the substrate. The semiconductor structure further includes a sealing layer comprising an inner sidewall and an outermost sidewall. In addition, the inner sidewall is in direct contact with the metal gate structure and the outermost sidewall is away from the metal gate structure. The semiconductor structure further includes a mask structure formed over the metal gate structure. In addition, the mask structure has a straight sidewall over the metal gate structure and a sloped sidewall extending from the inner sidewall of the sealing layer and passing over the outmost sidewall of the sealing layer.

Abstract: Semiconductor structures are provided. The semiconductor structure includes a substrate and a metal gate structure formed over the substrate. The semiconductor structure further includes a sealing layer comprising an inner sidewall and an outermost sidewall. In addition, the inner sidewall is in direct contact with the metal gate structure and the outermost sidewall is away from the metal gate structure. The semiconductor structure further includes a mask structure formed over the metal gate structure. In addition, the mask structure has a straight sidewall over the metal gate structure and a sloped sidewall extending from the inner sidewall of the sealing layer and passing over the outmost sidewall of the sealing layer.

Abstract: A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

Abstract: Semiconductor structures and methods for forming the same are provided. The method includes forming a dummy gate structure and forming a spacer on a lower portion of a sidewall of the dummy gate structure and exposing an upper portion of the sidewall of the dummy gate structure. The method further includes forming a dielectric layer covering the upper portion of the sidewall of the dummy gate structure exposed by the spacer and removing the dummy gate structure to form a tube-shaped trench. The method further includes removing a portion of the dielectric layer to form a cone-shaped trench and forming a gate structure in a bottom portion of the tube-shaped trench. The method further includes forming a hard mask structure in the cone-shaped trench and an upper portion of the tube-shaped trench, and an interface between the hard mask structure and the dielectric layer overlaps the spacer.

Abstract: A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

Abstract: Semiconductor structures and methods for forming the same are provided. The method includes forming a dummy gate structure and forming a spacer on a lower portion of a sidewall of the dummy gate structure and exposing an upper portion of the sidewall of the dummy gate structure. The method further includes forming a dielectric layer covering the upper portion of the sidewall of the dummy gate structure exposed by the spacer and removing the dummy gate structure to form a tube-shaped trench. The method further includes removing a portion of the dielectric layer to form a cone-shaped trench and forming a gate structure in a bottom portion of the tube-shaped trench. The method further includes forming a hard mask structure in the cone-shaped trench and an upper portion of the tube-shaped trench, and an interface between the hard mask structure and the dielectric layer overlaps the spacer.

Abstract: A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

Abstract: Semiconductor device structures and methods for forming the same are provided. The method for forming a semiconductor device structure includes forming a dummy gate structure over a substrate and forming a dielectric layer over the substrate around the dummy gate structure. The method for forming a semiconductor device structure further includes removing the dummy gate structure and removing a portion of the dielectric layer to form a funnel shaped trench. The method for forming a semiconductor device structure further includes forming a gate structure in a bottom portion of the funnel shaped trench and filling a hard mask material in a top portion of the funnel shaped trench to form a funnel shaped hard mask structure.

Abstract: A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

Abstract: A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

Abstract: A method of forming a contact structure of a gate structure is provided. In the method, an oxidation layer and a first sidewall layer disposed between a first metal gate and a second metal gate are etched to expose an underlying silicon substrate. A silicide portion defined by a contact profile is deposited in the exposed portion of the silicon substrate. A second sidewall layer substantially covers the first sidewall layer and at least partially covering the silicide portion is formed after depositing the silicide portion. A metal glue layer is deposited around the first metal gate and the second metal gate defining a trench above the silicide portion. A metal plug is deposited within the trench.

Abstract: A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

Abstract: A method for forming a self-aligned contact is provided. In an embodiment, a metal gate is formed on a substrate, and a gate spacer is formed adjacent the metal gate. A conductive plug is formed over the substrate, with the gate spacer disposed between the metal gate and the conductive plug. The metal gate and the conductive plug are recessed. A first dielectric layer is deposited over the gate spacer, over the metal gate, over the conductive plug, and along sidewalls of the metal gate. A first opening is formed in the first dielectric layer exposing the metal gate, and a second opening is formed in the first dielectric layer exposing the conductive plug. The first opening and the second opening are filled with a first conductive material.

Abstract: A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

Abstract: A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

Abstract: Self-aligned contacts are provided. In an embodiment the self-aligned contacts are formed by partially removing a first dielectric material from adjacent to a gate electrode and fully removing a second dielectric material from adjacent to the gate electrode. A conductive material is deposited into the regions of the removed first dielectric material and the second dielectric material, and the conductive material and metal gates are recessed below a spacer. A dielectric layer is deposited over the recessed conductive material and the recessed metal gates, and the self-aligned contacts are formed through the dielectric layer.

Abstract: A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.

Abstract: Self-aligned contacts are provided. In an embodiment the self-aligned contacts are formed by partially removing a first dielectric material from adjacent to a gate electrode and fully removing a second dielectric material from adjacent to the gate electrode. A conductive material is deposited into the regions of the removed first dielectric material and the second dielectric material, and the conductive material and metal gates are recessed below a spacer. A dielectric layer is deposited over the recessed conductive material and the recessed metal gates, and the self-aligned contacts are formed through the dielectric layer.

Abstract: A method of forming a contact structure of a gate structure is provided. In the method, an oxidation layer and a first sidewall layer disposed between a first metal gate and a second metal gate are etched to expose an underlying silicon substrate. A silicide portion defined by a contact profile is deposited in the exposed portion of the silicon substrate. A second sidewall layer substantially covers the first sidewall layer and at least partially covering the silicide portion is formed after depositing the silicide portion. A metal glue layer is deposited around the first metal gate and the second metal gate defining a trench above the silicide portion. A metal plug is deposited within the trench.

Abstract: A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first metal connect in a first active region and a second metal connect in a second active region, and over a shallow trench isolation region located between the first active region and a second active region. A method of forming the semiconductor arrangement includes forming a first opening over the first metal connect, the STI region, and the second metal connect, and forming the third metal connect in the first opening. Forming the third metal connect over the first metal connect and the second metal connect mitigates RC coupling.