Abstract: A method is provided for forming an unlanded via hole that substantially solves both the problems of high resistance and via profile loss due to etching. A patterned conductor layer on a first dielectric layer is provided firstly. A first insulating layer is then formed on the first dielectric layer and the conductor layer. A second dielectric layer is formed on the first insulating layer and subsequently etched back until the conductor layer is exposed. The following procedure is to form a second insulating layer on the second dielectric layer and the conductor layer. A third dielectric layer is formed on the second insulating layer. Thereafter, a patterned photoresist layer is formed on the third dielectric layer. Then the etching process is used to etch the third dielectric layer and the second insulating layer to form an unlanded via hole. Finally, the photoresist layer is removed. The unlanded via hole proposed in according with the present invention produces an unlanded via having a good profile.

Abstract: A method of forming a buried contact. A substrate has an oxide layer and a first conductive layer thereon, and an isolation region is formed in the first conductive layer, the oxide layer and the substrate. A patterned first mask layer with an opening is formed over the substrate. A portion of the isolation region and a portion of the first conductive layer are exposed. An ion implantation process is performed to form a buried contact within the substrate, and then the portion of the isolation region exposed by the opening is removed to form a trench in the isolation region. The patterned mask layer is removed, and next a second conductive layer is formed over the substrate and fills the trench. The second conductive layer and the first conductive layer are patterned to form a conductive wire and a gate, wherein the conductive wire electrically connects with the buried contact.

Abstract: A method of manufacturing a borderless contact hole. A substrate having a pad oxide layer and a silicon nitride layer formed thereon is provided. A trench is formed to penetrate through the silicon nitride layer and the pad oxide layer and into the substrate. A first oxide layer is formed in the trench, wherein a surface level of the first oxide layer is lower than that of the substrate. An etching stop layer is formed on the silicon nitride layer, a sidewall of the trench and the first oxide layer, conformally. A second oxide layer is formed on the etching stop layer and fills the trench. A portion of the second oxide layer, a portion of the etching stop layer, the silicon nitride layer and the pad oxide layer are removed. A portion of the second oxide layer in the trench and a portion of the etching stop layer in the trench are removed to form a recess until the surface level constructed by the remaining second oxide layer and the remaining etching stop layer is lower than a surface level of the substrate.

Abstract: A method of fabricating a self-aligned contact window is described. A gate oxide layer, a conductive layer, a first oxide layer and an undoped polysilicon layer are successively formed on a substrate. These layers above are patterned to form a gate structure. A water clean step is performed, producing a recess in the first oxide layer. A second oxide layer is thermally formed on the surface of the gate structure. An undoped polysilicon spacer is formed on the sidewall of the gate structure and a portion of the undoped polysilicon spacer extends into the recess of the first oxide layer. A dielectric layer is formed over the substrate and using the undoped polysilicon spacer as an etching stop, a self-aligned contact window is formed to expose the source/drain region.

Abstract: A method for depositing a silicon oxynitride layer that has a higher etch-removal rate. The deposition starts by first passing gas from a pipeline A into the deposition chamber before switching the RF power source on. The further is the delay in switching the RF power source on, the higher will be the etch-removal rate of the silicon oxynitride layer formed by the deposition. Furthermore, the RF power source will remain on for a short period after the pump starts pumping gas away from the deposition chamber through pipeline A at the end of the deposition. The sooner is the switching off of the RB power source after the pump start to operate, the higher will be the etch-removal rate of the silicon oxynitride layer that result from the deposition.

Abstract: A method of manufacturing a shallow trench isolation structure that utilizes the early formation of a strong oxide spacers so that for any subsequent pad oxide layer or sacrificial oxide layer removal using a wet etching method, the oxide layer adjacent to the substrate will not be over-etched to form recesses, thereby preventing the lowering of threshold voltage and the induction of a kink effect. The method includes the steps of forming a mask over a substrate and then patterning the mask to form a protective layer for subsequent etching operation. An oxide space is farmed on the sidewalls of the mask over the surface of the substrate. Subsequently, a trench is formed in the substrate along the side edges of the oxide spacers. A liner oxide box is formed on the sidewall of the trend and the liner oxide layer does not fill the trench. This is followed by filling the trench with a second oxide layer. After planarizing the upper surface with a chemical-mechanical polishing action, the mask is removed.

Abstract: Reaction products of organotin oxides, or halides such as dibutyltin oxide and tributyltin chloride and diorgano dithiophosphoric acids such as di-(2-ethylhexyl)dithiophosphoric acid are effective multifunctional antioxidant and antiwear additives in lubricants, greases and fuels.

Abstract: An aromatic functional fluid, specifically a monoalkylated tetradecyl diphenyl oxide synthetic lubricant, contains a polymer-supported reaction product of an organic quaternary ammonium salt, derived from a mercapto-heterocycle and a quaternary ammonium salt. To produce the polymer-supported organic quaternary ammonium salt, the salt is reacted with a dicarboxylic acid or anhydride, specifically 2-dodecen-1-ylsuccinic anhydride. An arylamine antioxidant, such as alkylated phenyl naphthylamine, can be added to the polymer supported organic quaternary ammonium salt-treated functional fluid to impart extra antioxidant and stability properties.

Abstract: Sulfur-containing ester derivatives of arylamines and hindered phenols have been found to be effective antioxidant and antiwear additives for lubricants.

Abstract: Reaction products of an organotin oxide, such as dibutyltin oxide, a diorgano dithiophosphoric acid such as di-(2-ethylhexyl)dithiophosphoric acid and an alkenyl or polyalkenyl succinic anhydride, such as dodecenyl succinic anhydride, are effective multifunctional antioxidant and antiwear additives in lubricants, greases and fuels.

Abstract: Quaternary ammonium salt derived thiadiazoles provide multifunctional antioxidant/antiwear characteristics to fuels.

Abstract: Thioester derived hindered phenols and thioester derived arylamines are effective antioxidant and antiwear additives for liquid hydrocarbon fuels.

Abstract: Amine salts of sulfur-containing alkylated phenols or alkylated naphthols, have been found to be effective multifunctional antioxidant and antiwear additives for lubricants.

Abstract: Dialkanol- and trialkanol amine-derived thioesters have been found to be effective multifunctional antiwear additives for lubricants and fuels.

Abstract: Quaternary ammonium salts of mercaptothiadiazoles and related heterocyclic derivatives have been found to be effective antioxidant and antiwear additives for lubricants and fuels.

Abstract: Thioester derived hindered phenols & thioester derived arylamines are effective antioxidant and antiwear additives for lubricants and fuels.

Abstract: Quaternary ammonium salt derived thiadiazoles provide multifunctional antioxidant/antiwear characteristics to lubricants when incorporated therein.