Abstract: A method for manufacturing a semiconductor package and an apparatus for flattening a workpiece are provided. The method includes providing a panel over a stage, wherein the panel includes a lower surface facing the stage and an upper surface opposite to the lower surface; applying a first force to a first region of the upper surface of the panel along at least one direction from the panel toward the stage; and transferring the first force from the first region to a second region of the upper surface of the panel different from the first region.

Abstract: An electrostatic discharge protection circuit includes a N type region, a P type component, a P type region, a N type element, a first conductive terminal, a second conductive terminal, a power clamp circuit and a conductive pad. The P type component is in the N type region. The N type element is in the P type region. The first conductive terminal is electrically connected to the N type region. The second conductive terminal is electrically connected to the P type region and the N type element. The power clamp circuit is electrically connected between the first conductive terminal and the second conductive terminal. The conductive pad is electrically connected to the P type component.

Abstract: The electrostatic discharge protection apparatus includes a substrate, a first well having a first conductivity type and disposed in the substrate, a second well having a second conductivity type and disposed in the first well, a first doping region having the first conductivity type and disposed in the second well, a second doping region having the first conductivity type and disposed in the second well, a third doping region having the second conductivity type and disposed in the second well, and a fourth doping region having the first conductivity type and disposed in the substrate. The first conductivity type is different from the second conductivity type. The second well, the first well, the substrate and the fourth doping region form a silicon controlled rectifier. Electrostatic discharge current flowing into the first doping region flows to the fourth doping region through the silicon controlled rectifier.

Abstract: A semiconductor device package includes a first conductive structure, a stress buffering layer and a second conductive structure. The first conductive structure includes a substrate, at least one first electronic component embedded in the substrate, and a first circuit layer disposed on the substrate and electrically connected to the first electronic component. The first circuit layer includes a conductive wiring pattern. The stress buffering layer is disposed on the substrate. The conductive wiring pattern of the first circuit layer extends through the stress buffering layer. The second conductive structure is disposed on the stress buffering layer and the first circuit layer.

Abstract: Methods, systems and apparatus for memory devices with discharging circuits are provided. In one aspect, a semiconductor device includes a semiconductor substrate, one or more discharging circuits arranged on the semiconductor substrate, one or more common source line (CSL) layers conductively coupled to the one or more discharging circuits, and a memory array having a three-dimensional (3D) array of memory cells arranged in a plurality of vertical channels on the one or more CSL layers. Each of the plurality of vertical channels includes a respective string of memory cells, and each of the one or more CSL layers is conductively coupled to corresponding strings of memory cells. Each of the one or more discharging circuits includes one or more transistors that are disabled by one or more corresponding conductive lines through the memory array.

Abstract: The invention relates to a stationary phase medium for adsorption chromatography, which is in form of porous particles suitable for being packed into a chromatographic column. The porous particles are made of cross-linked polymeric material and formed with interconnected macropores to constitute a porous network, through which a mobile phase fluid may flow in a convective manner. The porous particles are substantially free of diffusive pores and, thus, the mass transfer through the porous network is governed by convection alone. The porous particles are fabricated to have irregular granular configurations with rough outer surfaces, so that the convective flow between the porous particles will not be impeded during chromatography process.

Abstract: An electronic device package and a method for manufacturing an electronic device package are provided. The electronic device package includes electronic device structure which includes a first electronic device and a first encapsulant, a second electronic device, and a second encapsulant. The first encapsulant encapsulates the first electronic device. The second electronic device is adjacent to the electronic device structure. The second encapsulant encapsulates the electronic device structure and the second electronic device. A first extension line along a lateral surface of the first electronic device and a second extension line along a lateral surface of the first encapsulant define a first angle, the second extension line along the lateral surface of the first encapsulant and a third extension line along a lateral surface of the second electronic device define a second angle, and the first angle is different from the second angle.

Abstract: A semiconductor device package includes a first conductive structure, a stress buffering layer and a second conductive structure. The first conductive structure includes a substrate, at least one first electronic component embedded in the substrate, and a first circuit layer disposed on the substrate and electrically connected to the first electronic component. The first circuit layer includes a conductive wiring pattern. The stress buffering layer is disposed on the substrate. The conductive wiring pattern of the first circuit layer extends through the stress buffering layer. The second conductive structure is disposed on the stress buffering layer and the first circuit layer.

Abstract: A thyristor includes a first transistor and a second transistor. The first transistor has a first end serving as an anode end. The second transistor has a control end coupled to a second end of the first transistor, a first end coupled to a control end of the first transistor, and a second end coupled to the first end of the second transistor and serving as a cathode end.

Abstract: A display device includes a light source, a waveguide element, a liquid crystal coupler, a first holographic optical element and a second holographic optical element. The light source is configured to emit light. The waveguide element is located above the light source. The liquid crystal coupler is located between the waveguide element and the light source. The first holographic optical element is located on a top surface of the waveguide element, in which the liquid crystal coupler is configured to change an incident angle that the light emits to the first holographic optical element. The second holographic optical element is located on the top surface of the waveguide element, and there is a first distance in a horizontal direction between the first holographic optical element and the second holographic optical element, in which the second holographic optical element is configured to diffract the light to the waveguide element below.

Abstract: The electrostatic discharge protection apparatus includes a substrate, a first well having a first conductivity type and disposed in the substrate, a second well having a second conductivity type and disposed in the first well, a first doping region having the first conductivity type and disposed in the second well, a second doping region having the first conductivity type and disposed in the second well, a third doping region having the second conductivity type and disposed in the second well, and a fourth doping region having the first conductivity type and disposed in the substrate. The first conductivity type is different from the second conductivity type. The second well, the first well, the substrate and the fourth doping region form a silicon controlled rectifier. Electrostatic discharge current flowing into the first doping region flows to the fourth doping region through the silicon controlled rectifier.

Abstract: A thyristor includes a first transistor and a second transistor. The first transistor has a first end serving as an anode end. The second transistor has a control end coupled to a second end of the first transistor, a first end coupled to a control end of the first transistor, and a second end coupled to the first end of the second transistor and serving as a cathode end.

Abstract: An input output circuit and an electrostatic discharge (ESD) protection circuit are provided. The ESD protection circuit is adapted to a charged-device model (CDM). The ESD protection circuit includes a bipolar junction transistor (BJT). The BJT has a first end coupled to an input end of an input buffer and an output end of an output buffer. A second end of the BJT is coupled to a first ground rail. A control end of the BJT is coupled to one of a first power rail, a second power rail, the first ground rail and a second ground rail.

Abstract: An electronic device package and a method for manufacturing an electronic device package are provided. The electronic device package includes electronic device structure which includes a first electronic device and a first encapsulant, a second electronic device, and a second encapsulant. The first encapsulant encapsulates the first electronic device. The second electronic device is adjacent to the electronic device structure. The second encapsulant encapsulates the electronic device structure and the second electronic device. A first extension line along a lateral surface of the first electronic device and a second extension line along a lateral surface of the first encapsulant define a first angle, the second extension line along the lateral surface of the first encapsulant and a third extension line along a lateral surface of the second electronic device define a second angle, and the first angle is different from the second angle.

Abstract: Methods, systems and apparatus for memory devices with discharging circuits are provided. In one aspect, a semiconductor device includes a semiconductor substrate, one or more discharging circuits arranged on the semiconductor substrate, one or more common source line (CSL) layers conductively coupled to the one or more discharging circuits, and a memory array having a three-dimensional (3D) array of memory cells arranged in a plurality of vertical channels on the one or more CSL layers. Each of the plurality of vertical channels includes a respective string of memory cells, and each of the one or more CSL layers is conductively coupled to corresponding strings of memory cells. Each of the one or more discharging circuits includes one or more transistors that are disabled by one or more corresponding conductive lines through the memory array.

Abstract: The present disclosure relates to a semiconductor device, including a first source/drain region, a second source/drain region, a base region, a first electrostatic discharge region and a second electrostatic discharge region. The first source/drain region and the second source/drain region are configured to receive a first power voltage and a second power voltage, and are formed on the base region. The first electrostatic discharge region includes a first doped region and a first well. The first doped region is configured to receive the second power voltage, and formed in the first well. The second electrostatic discharge region includes a second doped region and a second well. The second doped region is configured to receive the first power voltage, and formed in the second well. The first source/drain region and the second source/drain region are disposed between the first electrostatic discharge region and the second electrostatic discharge region.

Abstract: A display device includes a light source, a waveguide element, a liquid crystal coupler, a first holographic optical element and a second holographic optical element. The light source is configured to emit light. The waveguide element is located above the light source. The liquid crystal coupler is located between the waveguide element and the light source. The first holographic optical element is located on a top surface of the waveguide element, in which the liquid crystal coupler is configured to change an incident angle that the light emits to the first holographic optical element. The second holographic optical element is located on the top surface of the waveguide element, and there is a first distance in a horizontal direction between the first holographic optical element and the second holographic optical element, in which the second holographic optical element is configured to diffract the light to the waveguide element below.

Abstract: An eye tracking device includes a substrate comprising a first substrate portion and a second substrate portion intersecting with the first substrate portion, an infrared light emitting element on the first substrate portion, and an image acquisition element on the second substrate portion. The infrared light emitting element is configured to emit infrared light to a user's eyeball. The image acquisition element and the infrared light emitting element are non-coplanar. The image acquisition element is configured to receive and sense the infrared light reflected by the eyeball for imaging.

Abstract: A semiconductor circuit and a manufacturing method for the same are provided. The semiconductor circuit includes an electrostatic discharge protection circuit. The electrostatic discharge protection circuit includes an N-type region, a P-type well, a first P-type element and a first N-type element. The P-type well is in the N-type region. The first P-type element is in the N-type region. The N-type region is continuously connected between the P-type well and the first P-type element. The first N-type element is in the P-type well.

Abstract: An input output circuit and an electrostatic discharge (ESD) protection circuit are provided. The ESD protection circuit is adapted to a charged-device model (CDM). The ESD protection circuit includes a bipolar junction transistor (BJT). The BJT has a first end coupled to an input end of an input buffer and an output end of an output buffer. A second end of the BJT is coupled to a first ground rail. A control end of the BJT is coupled to one of a first power rail, a second power rail, the first ground rail and a second ground rail.