Abstract: A semiconductor device includes a substrate having a first region and a second region, the first region including memory cells, and the second region including transistors for driving the memory cells, and device isolation regions disposed within the substrate to define active regions of the substrate. The active regions include a first guard active region surrounding the first region, a second guard active region surrounding a portion of the second region, and at least one dummy active region disposed between the first guard active region and the second guard active region.

Abstract: An acoustic wave resonator includes a substrate; a resonating part disposed on a first surface of the substrate and including a first electrode, a piezoelectric layer, and a second electrode; and a cap disposed on the first surface of the substrate and including an accommodating part accommodating the resonating part. The resonating part is configured to be operated by either one or both of a signal output from a first device substrate disposed facing a second surface of the substrate on an opposite side of the substrate from the first surface of the substrate and a signal output from a second device substrate disposed on the cap.

Abstract: A semiconductor device includes: a substrate including a field region that defines an active region; source/drain regions in the active region; a channel region between the source/drain regions; a lightly doped drain (LDD) region between one of the source/drain regions and the channel region; and a gate structure disposed on the channel region. An upper portion of the active region may include an epitaxial growth layer having a larger lattice constant than silicon (Si), and the source/drain regions and the LDD region may be doped with gallium (Ga).

Abstract: A semiconductor device comprises a lower conductive layer on a substrate. A conductive line is on the lower conductive layer. A buried trench in the conductive line is provided. A supporter which is on the conductive line and extends in the buried trench is provided. A stack structure including a plurality of insulating layers and a plurality of conductive layers that are alternately stacked is on the supporter. A channel structure passing through the stack structure, the supporter, and the conductive line is provided. An isolation trench passing through the stack structure, the supporter, and the conductive line is provided.

Abstract: Disclosed is a crucible that exhibits stable evaporation efficiency and durability with respect to Al, is used in an evaporation source of an electron-beam evaporator, and includes a storage unit, which includes a wall and a bottom and in which a deposition material is placed, and a wetting prevention unit that includes another wall, which is taller than the wall of the storage unit, and another bottom, and is combined with an exterior of the storage unit. The wetting prevention unit is provided so that only the wall of the storage unit is wet with Al, and accordingly, the lifespan of the crucible is lengthened. Further, contact with the ceramic material in order to prevent wetting is minimized, thereby preventing a reduction in the physical properties of the thin film due to the impurities mixed with the deposited Al.

Abstract: The present invention comprises: a base; a housing disposed at one side of the base; a lens barrel disposed inside the housing; a cover disposed at one side of the housing; a first substrate disposed at the other side of the base; an image sensor which is installed on the first substrate, and disposed below the lens barrel; a diaphragm set which is movably supported inside the housing and which adjusts the amount of light incident to the lens barrel; a first drive unit comprising a first coil and a first magnet which enable the lens barrel and the diaphragm set to move together in the optical axis direction; and a second substrate which is attached to the housing and comprises a plurality of terminals which protrude to the outside as a result of the drive of the first drive unit, wherein the diaphragm set has a second drive unit for driving the diaphragms disposed therein, and the terminals are also connected to the second drive unit.

Abstract: Disclosed herein is a polycarbonate resin composition. The polycarbonate resin composition includes a polycarbonate resin, inorganic fillers, an impact modifier comprising a modified olefin-based copolymer, and olefin wax containing a reactive group comprising at least one of a carboxylic acid group, a carboxylic acid anhydride group, an epoxy group, and a glycidyl group, wherein the inorganic fillers comprise flake-type fillers and needle-like fillers. The polycarbonate resin composition has excellent properties in terms of appearance, mechanical properties, and dimensional stability.

Abstract: Provided is an omega-transaminase mutant with improved activity using a point mutation in an active site of an omega-transaminase. Specifically, provided is a method for improving activity and extending a substrate spectrum of omega-transaminase by introducing a point mutation into a wild-type omega-transaminase rendered by replacing tryptophan at position 58 with the other amino acid.

Abstract: Disclosed are an ultraviolet mirror device and a method therefor. The ultraviolet mirror device of the present invention relates to a device that can generate an image obtained by capturing an image of skin in the ultraviolet region. The device can be connected to a portable terminal having a display unit, so as to be used as an ultraviolet mirror. To this end, the ultraviolet mirror device includes an ultraviolet filtering unit provided in a front portion or a rear portion of the lens unit to allow ultraviolet light to pass therethrough and thus enter the image sensor; and an image processing unit providing the portable terminal with multiple digital images generated at a predetermined frame rate per second by the image sensor and thus allowing a moving image to be regenerated in the display unit.

Abstract: A vertical type semiconductor device includes a substrate that has a plurality of trenches, a support pattern that fills the plurality of trenches and protrudes from a top surface of the substrate, a semiconductor layer disposed on the substrate that fills a space between the support patterns, a stacked structure disposed on the support pattern and the semiconductor layer that includes a plurality of insulation layers and a plurality of first conducive patterns that are alternately and repeatedly stacked, and a plurality of channel structures that penetrate through the structure and the semiconductor layer and that extend into the support pattern. Each channel structure includes a channel layer. At least a portion of the channel layer makes contact with the semiconductor layer.

Abstract: A thermoplastic resin composition includes: about 100 parts by weight of a polycarbonate resin; about 1 to about 15 parts by weight of a rubber-modified vinyl copolymer resin; about 10 to about 30 parts by weight of a phosphorus flame retardant; about 3 to about 12 parts by weight of calcium carbonate; about 5 to about 40 parts by weight of talc; and about 0.001 to about 5 parts by weight of a black pigment, wherein a weight ratio of calcium carbonate to talc ranges from about 1:1.5 to about 1:6 and the black pigment has an average particle size of about 10 nm to about 24 nm. The thermoplastic resin composition can realize high gloss and good appearance characteristics, and can exhibit good properties in terms of flowability, impact resistance, thermal resistance, thin film flame retardancy, dimensional stability, and the like.

Abstract: A vertical memory device is provided as follows. A substrate has a cell array region and a connection region adjacent to the cell array region. A first gate stack includes gate electrode layers spaced apart from each other in a first direction perpendicular to the substrate. The gate electrode layers extends from the cell array region to the connection region in a second direction perpendicular to the first direction to form a first stepped structure on the connection region. The first stepped structure includes a first gate electrode layer and a second gate electrode layer sequentially stacked. The second gate electrode layer includes a first region having the same length as a length of the first gate electrode layer and a second region having a shorter length than the length of the first gate electrode layer.

Abstract: An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonance part including a first electrode, a second electrode, and a piezoelectric layer disposed between the first and second electrodes; and a substrate disposed below the resonance part. The piezoelectric layer is disposed on a flat surface of the first electrode.

Abstract: Disclosed herein are a thermoplastic resin composition and a molded article produced from the thermoplastic resin composition. The thermoplastic resin composition includes: a polycarbonate resin; a rubber-modified vinyl graft copolymer; inorganic fillers comprising talc and wollastonite; maleic anhydride-modified olefin wax; and a phosphorus compound represented by the following Formula 1, wherein a weight ratio of the talc to the wollastonite ranges from about 1:0.1 to about 1:0.9, and a weight ratio of the talc to the phosphorus compound ranges from about 1:0.005 to about 1:0.05: wherein R1 and R2 are the same or different and are each independently a hydrogen atom or a C1 to C10 alkyl group and R3 is a C10 to C30 alkyl group. The thermoplastic resin composition can have excellent properties in terms of impact resistance, stiffness, dimensional stability, appearance, and balance therebetween.

Abstract: A semiconductor device includes: a substrate including a field region that defines an active region; source/drain regions in the active region; a channel region between the source/drain regions; a lightly doped drain (LDD) region between one of the source/drain regions and the channel region; and a gate structure disposed on the channel region. An upper portion of the active region may include an epitaxial growth layer having a larger lattice constant than silicon (Si), and the source/drain regions and the LDD region may be doped with gallium (Ga).

Abstract: A vertical memory device is provided as follows. A substrate has a cell array region and a connection region adjacent to the cell array region. A first gate stack includes gate electrode layers spaced apart from each other in a first direction perpendicular to the substrate. The gate electrode layers extends from the cell array region to the connection region in a second direction perpendicular to the first direction to form a first stepped structure on the connection region. The first stepped structure includes a first gate electrode layer and a second gate electrode layer sequentially stacked. The second gate electrode layer includes a first region having the same length as a length of the first gate electrode layer and a second region having a shorter length than the length of the first gate electrode layer.

Abstract: An electroporation apparatus comprising an elongated hollow member in order to provide a uniform electric field during electroporation, wherein specifically, electroporation is carried out by applying electric pulses through a couple of electrodes from both end parts of the elongated hollow member, after the hollow member is charged with fluid specimen including cells and material which would be injected into the cells.

Abstract: A semiconductor device includes gate electrodes stacked along a direction perpendicular to an upper surface of a substrate, the gate electrodes extending to different lengths in a first direction, and each gate electrode including subgate electrodes spaced apart from each other in a second direction perpendicular to the first direction, and gate connection portions connecting subgate electrodes of a same gate electrode of the gate electrodes to each other, channels extending through the gate electrodes perpendicularly to the upper surface of the substrate, and dummy channels extending through the gate electrodes perpendicularly to the upper surface of the substrate, the dummy channels including first dummy channels arranged in rows and columns, and second dummy channels arranged between the first dummy channels in a region including the gate connection portions.

Abstract: A method for detecting a presence and/or a concentration of a target substance in a reagent solution using enzyme-linked immunosorbent assay (ELISA) includes binding the target substance directly or indirectly to an electrode, and binding a detection agent directly or indirectly to the bound target substance. The method further includes modulating a pH of only a portion of the reagent solution in which the bound target substance and the bound detection agent are located using the electrode, the modulated pH of the portion of the reagent solution causing the bound detection agent to undergo a change, and detecting the change in the bound detection agent. The detected change corresponds to the presence of the target substance in the reagent solution and/or the concentration of the target substance in the reagent solution.

Abstract: A method for detecting a presence and/or a concentration of a target substance in a reagent solution using enzyme-linked immunosorbent assay (ELISA) includes binding the target substance directly or indirectly to an electrode, and binding a detection agent directly or indirectly to the bound target substance. The method further includes modulating a pH of only a portion of the reagent solution in which the bound target substance and the bound detection agent are located using the electrode, the modulated pH of the portion of the reagent solution causing the bound detection agent to undergo a change, and detecting the change in the bound detection agent. The detected change corresponds to the presence of the target substance in the reagent solution and/or the concentration of the target substance in the reagent solution.