Patents by Inventor Shikang CHENG

Shikang CHENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DEVICE INTEGRATED WITH DEPLETION-MODE JUNCTION FIELF-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20190221560
    Abstract: A device integrated with a depletion-mode junction field-effect transistor and a method for manufacturing the device. The device includes: a well region, which is of a second conduction type and formed within a first conduction region (214); a JFET source (210), which is of a first conduction type and formed within the well region; a metal electrode (212) of the JFET sources formed on the JFET sources (210), which is in contact with the JFET sources (210); a lateral channel region (208), which is of the first conduction type and formed between two adjacent JFET sources (210), while two ends thereof are in contact with the two adjacent JFET sources (210); and a JFET metal gate (213) formed on the well region.
    Type: Application
    Filed: August 21, 2017
    Publication date: July 18, 2019
    Applicant: CSMC TECHNOLOGIES FAB2 CO., LTD.
    Inventors: Yan GU, Shikang CHENG, Sen ZHANG