Abstract: Various embodiments of the present application are directed towards a semiconductor packaging device including a shield structure configured to block magnetic and/or electric fields from a first electronic component and a second electronic component. The first and second electronic components may, for example, be inductors or some other suitable electronic components. In some embodiments, a first IC chip overlies a second IC chip. The first IC chip includes a first substrate and a first interconnect structure overlying the first substrate. The second IC chip includes a second substrate and a second interconnect structure overlying the second substrate. The first and second electronic components are respectively in the first and second interconnect structures. The shield structure is directly between the first and second electronic components.

Abstract: Various embodiments of the present application are directed towards a semiconductor packaging device including a shield structure configured to block magnetic and/or electric fields from a first electronic component and a second electronic component. The first and second electronic components may, for example, be inductors or some other suitable electronic components. In some embodiments, a first IC chip overlies a second IC chip. The first IC chip includes a first substrate and a first interconnect structure overlying the first substrate. The second IC chip includes a second substrate and a second interconnect structure overlying the second substrate. The first and second electronic components are respectively in the first and second interconnect structures. The shield structure is directly between the first and second electronic components.

Abstract: Various embodiments of the present application are directed towards a semiconductor packaging device including a shield structure configured to block magnetic and/or electric fields from a first electronic component and a second electronic component. The first and second electronic components may, for example, be inductors or some other suitable electronic components. In some embodiments, a first IC chip overlies a second IC chip. The first IC chip includes a first substrate and a first interconnect structure overlying the first substrate. The second IC chip includes a second substrate and a second interconnect structure overlying the second substrate. The first and second electronic components are respectively in the first and second interconnect structures. The shield structure is directly between the first and second electronic components.

Abstract: Present disclosure provides a semiconductor structure, including a semiconductor substrate, a first metal layer, and a through substrate via (TSV). The semiconductor substrate has an active side. The first metal layer is closest to the active side of the semiconductor substrate, and the first metal layer has a first continuous metal feature. The TSV is extending from the semiconductor substrate to the first continuous metal feature. A width of the TSV at the first metal layer is wider than a width of the first continuous metal feature. Present disclosure also provides a method for manufacturing the semiconductor structure described herein.

Abstract: A three-dimensional (3D) integrated circuit (IC) die is provided. In some embodiments, a first IC die comprises a first semiconductor substrate, a first interconnect structure over the first semiconductor substrate, and a first hybrid bond (HB) structure over the first interconnect structure. The first HB structure comprises a HB link layer and a HB contact layer extending from the HB link layer to the first interconnect structure. A second IC die is over the first IC die, and comprises a second semiconductor substrate, a second HB structure, and a second interconnect structure between the second semiconductor substrate and the second HB structure. The second HB structure contacts the first HB structure. A seal-ring structure is in the first and second IC dies. Further, the seal-ring structure extends from the first semiconductor substrate to the second semiconductor substrate, and is defined in part by the HB contact layer.

Abstract: Present disclosure provides a semiconductor structure, including a semiconductor substrate having an active side, an interconnect layer in proximity to the active side of the semiconductor substrate, and a through substrate via extending from the semiconductor substrate to a first metal layer of the interconnect layer. The TSV being wider than the continuous metal feature. Present disclosure also provides a method for manufacturing the semiconductor structure described herein.

Abstract: A three-dimensional (3D) integrated circuit (IC) die is provided. In some embodiments, a first IC die comprises a first semiconductor substrate, a first interconnect structure over the first semiconductor substrate, and a first hybrid bond (HB) structure over the first interconnect structure. The first HB structure comprises a HB link layer and a HB contact layer extending from the HB link layer to the first interconnect structure. A second IC die is over the first IC die, and comprises a second semiconductor substrate, a second HB structure, and a second interconnect structure between the second semiconductor substrate and the second HB structure. The second HB structure contacts the first HB structure. A seal-ring structure is in the first and second IC dies. Further, the seal-ring structure extends from the first semiconductor substrate to the second semiconductor substrate, and is defined in part by the HB contact layer.

Abstract: A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.

Abstract: A three-dimensional (3D) integrated circuit (IC) die is provided. In some embodiments, a first IC die comprises a first semiconductor substrate, a first interconnect structure over the first semiconductor substrate, and a first hybrid bond (HB) structure over the first interconnect structure. The first HB structure comprises a HB link layer and a HB contact layer extending from the HB link layer to the first interconnect structure. A second IC die is over the first IC die, and comprises a second semiconductor substrate, a second HB structure, and a second interconnect structure between the second semiconductor substrate and the second HB structure. The second HB structure contacts the first HB structure. A seal-ring structure is in the first and second IC dies. Further, the seal-ring structure extends from the first semiconductor substrate to the second semiconductor substrate, and is defined in part by the HB contact layer.

Abstract: A game machine includes an object-capturing unit, a maneuver unit and a display unit. The game machine includes a capture area for containing objects each provided with an RFID tag and a scan area in communication with the capture area. The maneuver unit is operable to control the object-capturing unit to capture one of the objects from the capture area and drop the object into the scan area. A control module includes a processing unit, an initiating unit and a tag scanner. The processing unit is electrically connected to the object-capturing unit, the maneuver unit and the display unit. The initiating unit is electrically connected to the processing unit. The tag scanner is electrically connected to the processing unit, and adapted for scanning the RFID tag of the object so that a code of the RFID tag of the object can be translated and shown on the display unit.

Abstract: Present disclosure provides a semiconductor structure, including a semiconductor substrate having an active side, an interconnect layer in proximity to the active side of the semiconductor substrate, and a through substrate via extending from the semiconductor substrate to a first metal layer of the interconnect layer. The TSV being wider than the continuous metal feature. Present disclosure also provides a method for manufacturing the semiconductor structure described herein.

Abstract: A three-dimensional (3D) integrated circuit (IC) die is provided. In some embodiments, a first IC die comprises a first semiconductor substrate, a first interconnect structure over the first semiconductor substrate, and a first hybrid bond (HB) structure over the first interconnect structure. The first HB structure comprises a HB link layer and a HB contact layer extending from the HB link layer to the first interconnect structure. A second IC die is over the first IC die, and comprises a second semiconductor substrate, a second HB structure, and a second interconnect structure between the second semiconductor substrate and the second HB structure. The second HB structure contacts the first HB structure. A seal-ring structure is in the first and second IC dies. Further, the seal-ring structure extends from the first semiconductor substrate to the second semiconductor substrate, and is defined in part by the HB contact layer.

Abstract: An interactive treasure-hunting game system includes a treasure-hunting game machine, a control module, a portable device and a server. The treasure-hunting game machine contains objects. The control module is inserted in and operatively connected to the treasure-hunting game machine. The control module, the portable device and the server are connected to one another via the internet.

Abstract: A device includes an image sensor chip having formed therein an elevated photodiode, and a device chip underlying and bonded to the image sensor chip. The device chip has a read out circuit electrically connected to the elevated photodiode.

Abstract: Present disclosure provides a semiconductor structure, including a semiconductor substrate having an active side, an interconnect layer over the active side of the semiconductor substrate, and a through substrate via (TSV) extending from the semiconductor substrate to the first metal layer. The interconnect layer includes a first metal layer closest to the active side of the semiconductor substrate, a thickness of the first metal layer is lower than 1 micrometer, and a dimension of a continuous metal feature of the first metal layer is less than 2 micrometer from a top view perspective. The continuous metal feature is cut off by a first dielectric feature. Present disclosure also provides a method for manufacturing the semiconductor structure described herein.

Abstract: A three-dimensional (3D) integrated circuit (IC) die is provided. In some embodiments, a first IC die comprises a first semiconductor substrate, a first interconnect structure over the first semiconductor substrate, and a first hybrid bond (HB) structure over the first interconnect structure. The first HB structure comprises a HB link layer and a HB contact layer extending from the HB link layer to the first interconnect structure. A second IC die is over the first IC die, and comprises a second semiconductor substrate, a second HB structure, and a second interconnect structure between the second semiconductor substrate and the second HB structure. The second HB structure contacts the first HB structure. A seal-ring structure is in the first and second IC dies. Further, the seal-ring structure extends from the first semiconductor substrate to the second semiconductor substrate, and is defined in part by the HB contact layer.

Abstract: An interactive treasure-hunting game system includes a treasure-hunting game machine, a control module, a portable device and a server. The treasure-hunting game machine contains objects. The control module is inserted in and operatively connected to the treasure-hunting game machine. The control module, the portable device and the server are connected to one another via the internet.

Abstract: A crossover interactive transaction system includes a server, a network, portable devices and terminal devices according to the preferred embodiment of the present invention. The server is provided for a platform provider. Each of the portable devices is provided for a real customer. Each of the terminal devices is provided for a bricks-and-mortar store. Via cables or in a wireless manner, the server communicates data with the portable devices and terminal devices via the network. Thus, in the real world, the real customers can find transactions marked in virtual stores in a virtual world and interact with the bricks-and-mortar stores and corresponding to the virtual stores. Each of the transactions includes transaction data of a site, a mission and a reward for example. The site can be a bricks-and-mortar store or a tourist's attraction. The mission can be listening to introduction of products, testing food or advertisement for example.

Abstract: A crossover interactive marketing system is operable to combine the real world with a virtual world. The crossover interactive marketing system includes the internet, a platform provider's server, at least one real customer's portable device and at least one bricks-and-mortar store's terminal device. The server is connected to the portable device and the terminal device via the internet to allow the real customer to find in the real world the marketing event marked in the virtual world to allow the real customer to interact with the bricks-and-mortar store to complete the marketing event in the real world.

Abstract: A game machine includes an object-capturing unit, a maneuver unit and a display unit. The game machine includes a capture area for containing objects each provided with an RFID tag and a scan area in communication with the capture area. The maneuver unit is operable to control the object-capturing unit to capture one of the objects from the capture area and drop the object into the scan area. A control module includes a processing unit, an initiating unit and a tag scanner. The processing unit is electrically connected to the object-capturing unit, the maneuver unit and the display unit. The initiating unit is electrically connected to the processing unit. The tag scanner is electrically connected to the processing unit, and adapted for scanning the RFID tag of the object so that a code of the RFID tag of the object can be translated and shown on the display unit.