Abstract: A camera module having a voice coil motor driver, including a driving controller configured to compare a reference voltage and a negative feedback voltage to output a driving control signal, and a driver configured to drive a coil of the voice coil motor according to the driving control signal.

Abstract: There is provided a digital imaging apparatus including a motion sensor configured to output motion data corresponding to a movement of a camera module from at least one sensing axis, a single signal conversion processor configured to transmit or receive the motion data at a switching timing interval, and to compensate for a phase delay due to the switching timing interval of the motion data, and a single signal conversion controller configured to control the switching timing interval of the single signal conversion processor and phase delay compensation regarding the motion data of the at least one sensing axis according to the switching timing interval.

Abstract: A method of manufacturing a magnetic memory device includes forming a lower magnetic layer, a tunnel barrier layer, and an upper magnetic layer on a substrate, forming a magnetic tunnel junction (MTJ) pattern by patterning the lower magnetic layer, the tunnel barrier layer, and the upper magnetic layer, and irradiating a side wall of the MTJ pattern using a beam including an oxygen ion, wherein, in the forming of the MTJ pattern, a metal redeposition material covering the side wall of the MTJ pattern is formed and the beam is radiated to the metal redeposition material.

Abstract: A semiconductor device may include a first magnetic layer including a plurality of first regions configuring a plurality of memory cells and spaced apart from each other on a substrate, and a second region encompassing the plurality of first regions and electrically isolated from the first regions, a tunnel barrier layer disposed on the first magnetic layer, and a second magnetic layer disposed on the tunnel barrier layer.

Abstract: A VCM driving circuit in accord with one embodiment includes a driving block configured to generate a driving current of the VCM by receiving a reference voltage and a feedback voltage; a sensing transistor configured to generate the feedback voltage by sensing the driving current while in an on state thereof and to cut off the driving current while in an off state thereof; and a driving control block configured to control driving of the VCM through an on/off control of the sensing transistor.

Abstract: A method of fabricating a magnetic memory device is provided. The method may include sequentially forming a first magnetic layer, a tunnel barrier layer, and a second magnetic layer on a substrate, forming a mask pattern on the second magnetic layer to expose a portion of the second magnetic layer, forming a capping insulating layer on a sidewall of the mask pattern and the portion of the second magnetic layer, injecting an oxygen ion into the portion of the second magnetic layer through the capping insulating layer to form an oxide layer, anisotropically etching the capping insulating layer to form a capping spacer, and patterning the oxide layer, the tunnel barrier layer, and the first magnetic layer using the mask pattern and the capping spacer.

Abstract: The motor driving apparatus according to an exemplary embodiment in the present disclosure may include: a controlling unit outputting a digital code; a converting unit converting the digital code into an analog driving signal; and a correction unit changing the analog driving signal at a predetermined ratio using a plurality of resistors.

Abstract: An electronic watt-hour meter of according to an aspect of the invention includes: a first multiplexer receiving a plurality of detected currents detected in respective polyphase power lines in parallel; a first signal converter converting a signal output from the first multiplexer into a digital signal; a first demultiplexer outputting a serial input from the first signal converter in parallel; a line voltage generator generating a plurality of line voltages from the plurality of detected voltages; a second multiplexer receiving the plurality of line voltages in parallel, to output the received line voltages in series; a second signal converter converting a signal output from the second multiplexer into a digital signal; a second demultiplexer outputting a serial input from the second signal converter in parallel; and an calculating unit calculating a power value from a signal output from the first demultiplexer and a signal output from the second demultiplexer.

Abstract: In a method of manufacturing an MRAM device, a lower electrode and a preliminary first free layer pattern sequentially stacked are formed on a substrate. An upper portion of the preliminary first free layer pattern is removed to form a first free layer pattern. A second free layer and a tunnel barrier layer are sequentially formed on the first free layer pattern. The second free layer is partially oxidized to form a second free layer pattern. A fixed layer structure is formed on the tunnel barrier layer.

Abstract: Magnetic memory devices include a plurality of first magnetic patterns on a substrate so as to be spaced apart from each other, a first insulating pattern between the first magnetic patterns to define the first magnetic patterns, and a tunnel barrier layer covering the first magnetic patterns and the first insulating pattern. The first insulating pattern includes a first magnetic element, and the first magnetic element is the same as a second magnetic element constituting the first magnetic patterns.

Abstract: Provided is a power measurement device including a detection part configured to detect a supply current and a supply voltage from a commercial alternating current power supply, a frequency control part configured to transit a fundamental frequency by the supply current and the supply voltage to an intermediate frequency, a conversion part configured to generate a digital current value and a digital voltage value of the supply current and the supply voltage having the intermediate frequency applied from the frequency control part and transit the intermediate frequency to the fundamental frequency again, and a calculation/control part configured to calculate wattage using the digital current value and the digital voltage value, which are output signals of the conversion part.

Abstract: Embodiments of the invention provide an apparatus for driving an actuator of a camera module in a mobile device. The apparatus includes a proportional-integral-derivative (PID) controller configured to compare an output of a gyro sensor with an output of a hall sensor configured to sense a position of an actuator to output a digital signal of plural bits, and a differential current digital-to-analog converter configured to convert the digital signal output from the PID controller into an analog current signal.

Abstract: A semiconductor device includes a switching device disposed on a substrate. A buffer electrode pattern is disposed on the switching device. The buffer electrode pattern includes a first region having a first vertical thickness, and a second region having a second vertical thickness smaller than the first vertical thickness. A lower electrode pattern is disposed on the first region of the buffer electrode pattern. A trim insulating pattern is disposed on the second region of the buffer electrode pattern. A variable resistive pattern is disposed on the lower electrode pattern.

Abstract: Methods of forming a semiconductor device include forming an insulation layer on a semiconductor structure, forming an opening in the insulation layer, the opening having a sidewall defined by one side of the insulation layer, forming a first metal layer in the opening, at least partially exposing the sidewall of the opening by performing a wet-etching process on the first metal layer, and selectively forming a second metal layer on the etched first metal layer. An average grain size of the first metal layer is smaller than an average grain size of the second metal layer. Related semiconductor devices are also disclosed.

Abstract: Methods of forming a semiconductor device include forming an insulation layer on a semiconductor structure, forming an opening in the insulation layer, the opening having a sidewall defined by one side of the insulation layer, forming a first metal layer in the opening, at least partially exposing the sidewall of the opening by performing a wet-etching process on the first metal layer, and selectively forming a second metal layer on the etched first metal layer. An average grain size of the first metal layer is smaller than an average grain size of the second metal layer. Related semiconductor devices are also disclosed.

Abstract: An electronic watt-hour meter of according to an aspect of the invention includes: a first multiplexer receiving a plurality of detected currents detected in respective polyphase power lines in parallel; a first signal converter converting a signal output from the first multiplexer into a digital signal; a first demultiplexer outputting a serial input from the first signal converter in parallel; a line voltage generator generating a plurality of line voltages from the plurality of detected voltages; a second multiplexer receiving the plurality of line voltages in parallel, to output the received line voltages in series; a second signal converter converting a signal output from the second multiplexer into a digital signal; a second demultiplexer outputting a serial input from the second signal conveter in parallel; and an calculating unit calculating a power value from a signal output from the first demultiplexer and a signal output from the second demultiplexer.

Abstract: The present invention provides methods of forming a phase-change material layer including providing a substrate and a chalcogenide target including germanium (Ge), antimony (Sb) and tellurium (Te) at a temperature wherein tellurium is volatilized and antimony is not volatilized, and performing a sputtering process to form the phase-change material layer including a chalcogenide material on the substrate. Methods of manufacturing a phase-change memory device using the same are also provided.

Abstract: A semiconductor device includes a switching device disposed on a substrate. A buffer electrode pattern is disposed on the switching device. The buffer electrode pattern includes a first region having a first vertical thickness, and a second region having a second vertical thickness smaller than the first vertical thickness. A lower electrode pattern is disposed on the first region of the buffer electrode pattern. A trim insulating pattern is disposed on the second region of the buffer electrode pattern. A variable resistive pattern is disposed on the lower electrode pattern.

Abstract: There are provided an electronic watt-hour meter capable of processing a plurality of input signals and a method of calculating watt-hours. The electronic watt-hour meter includes: a signal sensor sensing analogue type voltage and current signals; a multiplexer selectively outputting any one signal of the sensed voltage and current signals; a signal converter converting the selectively outputted signal into a digital signal; a demultiplexer outputting the converted digital signal through a port corresponding to the converted digital signal; and a calculator calculating watt-hours based on the converted digital signal, thereby allowing for a reduction in power consumption and the miniaturizing of the watt-hour meter.

Abstract: Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer.