Abstract: The present invention relates to a composition comprising a plurality of sodium salts represented by the formula (I): wherein, m1, n1, m2 and n2 respectively and independently represent a positive number between 0 and 2, provided that m1+n1=2, m2+n2=2, 0<m1+m2<4 and 0<n1+n2<4, and a method for producing the same, and a method for inhibiting the decomposition of a sodium salt represented by general formula (IV): comprising: having the sodium salt represented by general formula (IV) in the presence of the sodium salts represented by formula (I), and according to the present invention the stability over time of the sodium salt represented by general formula (IV) is improved.

Abstract: Disclosed are a sodium salt represented by the average formula (I) below, and a method for producing such a sodium salt. (In the formula, m1, n1, m2 and n2 independently represent 0 or a positive number not greater than 2, while satisfying m1+n1=2, m2+n2=2, 0<m1+m2<4 and 0<n1+n2<4.) Also disclosed is a decomposition suppression method which makes a sodium salt represented by average formula (I) coexist with a sodium salt represented by the general formula (IV) below. This method enables improvement of long-term stability of a sodium salt represented by general formula (IV).

Abstract: The present invention relates to a sodium salt represented by average formula (I): (wherein, m1, n1, m2 and n2 respectively and independently represent a positive number of 0 0r 2 or less, provided that m1+n1=2, m2+n2=2, 0<m1+m2<4 and 0<n1+n2<4), a method for producing the same, and a method for inhibiting decomposition of a sodium salt represented by general formula (IV): [CHEMICAL 4] comprising: having the sodium salt represented by general formula (IV) in the presence of the sodium salt represented by average formula (I), and according to the present invention the stability over time of the sodium salt represented by general formula (IV) is improved.

Abstract: The present invention relates to a slurry for chemical mechanical polishing, which contains a silica polishing material, an oxidizing agent, a benzotriazole-based compound, a diketone and water.

Abstract: The present invention provides carbapenem hydrochloride trihydrate crystals, which are chemically stable, easily purified and useful as antimicrobial agents, a process for producing them, and a powdery charged preparation for injection containing them. That is, it provides carbapenem hydrochloride trihydrate crystals having a powdery X-ray diffraction pattern containing lattice distances (d) of 9.0, 4.1 and 2.8 ?, a process for producing them, and a powdery charged preparation for injection containing them.

Abstract: The present invention provides carbapenem hydrochloride trihydrate crystals, which are chemically stable, easily purified and useful as antimicrobial agents, a process for producing them, and a powdery charged preparation for injection containing them. That is, it provides carbapenem hydrochloride trihydrate crystals having a powdery X-ray diffraction pattern containing lattice distances (d) of 9.0, 4.1 and 2.8 ?, a process for producing them, and a powdery charged preparation for injection containing them.

Abstract: This invention relates to a chemical mechanical polishing slurry comprising polishing grains, ammonium nitrate as an oxidizing agent, 1,2,4-triazole as a polishing promoter for a copper metal film and water and having a pH within a range of 3 to 4. The polishing slurry is suitable for forming a damascene copper-based metal interconnection comprising a tantalumr-based metal as a barrier metal film material.

Abstract: The present invention relates to a slurry for chemical mechanical polishing, which contains a silica polishing material, an oxidizing agent, a benzotriazole-based compound, a diketone and water.

Abstract: A slurry for polishing copper-based metal containing a silica polishing material, an oxidizing agent, an amino acid, a triazole-based compound and water, wherein a content ratio of amino acid to triazole-based compound (amino acid/triazole-based compound (weight ratio)) is 5 to 8.

Abstract: A production process which comprises subjecting a basic antibiotic.oxalate (II) to salt-exchange with an alkali earth metal salt (III) of an inorganic acid: wherein the ring A means the basic antibiotic; R10 means a protected functional group used in organic synthesis; Ak—E means the alkali earth metal; and B means the inorganic acid, respectively.

Abstract: By using a polishing slurry which contains, at least, a polishing grain, an oxidizing agent and a basic amino acid compound, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.

Abstract: This invention provides a chemical mechanical polishing slurry for polishing a copper-based metal film formed on an insulating film comprising a concave on a substrate, comprising a polishing material, an oxidizing agent and water as well as a benzotriazole compound and a triazole compound. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing.

Abstract: This invention provides a chemical mechanical polishing slurry for polishing a metal film formed on an insulating film with a concave on a substrate wherein the slurry contains a thickener without an ionic group with an opposite sign to a charge on a polishing material surface to 0.001 wt % or more and less than 0.05 wt % to the total amount of the slurry and has a slurry viscosity of 1 mPa·s to 5 mPa·s both inclusive. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing or erosion.

Abstract: By using a polishing slurry which comprises, at least, a polishing grain, an oxidizing agent and a higher-mono-primary amine, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.

Abstract: By using a polishing slurry which comprises, at least, a polishing grain, an oxidizing agent and a higher-mono-primary amine, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.

Abstract: This invention provides a chemical mechanical polishing slurry for polishing a metal film formed on an insulating film with a concave on a substrate wherein the slurry contains a thickener without an ionic group with an opposite sign to a charge on a polishing material surface to 0.001 wt % or more and less than 0.05 wt% to the total amount of the slurry and has a slurry viscosity of 1 mPa·s to 5 mPa·s both inclusive. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing or erosion.

Abstract: By using a polishing slurry which contains, at least, a polishing grain, an oxidizing agent and a basic amino acid compound, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.

Abstract: This invention provides a chemical mechanical polishing slurry for polishing a copper-based metal film formed on an insulating film comprising a concave on a substrate, comprising a polishing material, an oxidizing agent and water as well as a benzotriazole compound and a triazole compound. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing.

Abstract: The present invention relates to a slurry used for chemical mechanical polishing of a substrate having an insulating film and a tantalum-containing metal film formed on the insulting film, which slurry contains a silica abrasive and a polycarboxylic acid such as oxalic acid, malonic acid, tartaric acid, malic acid, glutaric acid, citric acid, maleic acid or the like. According to the present invention, a buried electric connection of high reliability and excellent electrical properties can be formed at a high polishing rate, i.e. at a high throughput with the generation of dishing and erosion being suppressed.

Abstract: In chemical mechanical polishing of a substrate comprising a tantalum-containing metal film, a slurry for chemical mechanical polishing comprising a silica polishing grain and an inorganic salt in an amount of 0.01 wt % to 10 wt % both inclusive may be used to prevent dishing and erosion, as well as to achieve an improved polishing rate for tantalum without any damage to tantalum.