Abstract: The present disclosure provides a sensing circuit, including a photo-sensing component, a first transistor, and a temperature-sensing component. The photo-sensing component is configured to receive a light and transmit a first current according to an intensity of the light. A gate terminal of the first transistor is configured to receive a first control circuit. The photo-sensing component and the first transistor are coupled in series between first and second nodes. The temperature-sensing component is coupled between the first and second nodes and is configured to generate a second current according to a temperature. The temperature-sensing component includes a channel structure, a first gate, a second gate, and a light-shielding structure. The channel structure is configured to transmit the second current.

Abstract: The present disclosure provides a sensing circuit, including a photo-sensing component, a first transistor, and a temperature-sensing component. The photo-sensing component is configured to receive a light and transmit a first current according to an intensity of the light. A gate terminal of the first transistor is configured to receive a first control circuit. The photo-sensing component and the first transistor are coupled in series between first and second nodes. The temperature-sensing component is coupled between the first and second nodes and is configured to generate a second current according to a temperature. The temperature-sensing component includes a channel structure, a first gate, a second gate, and a light-shielding structure. The channel structure is configured to transmit the second current.

Abstract: A photosensitive device includes a substrate, an active element layer, a first photosensitive element and a second photosensitive element. Each first photosensitive element includes a first lower conductive structure, a first photosensitive layer, and a first upper conductive structure stacked in sequence. Each second photosensitive element includes a second lower conductive structure, a second photosensitive layer, and a second upper conductive structure stacked in sequence. The first upper conductive structure includes an opaque electrode or a semi-transparent electrode, and the second upper conductive structure includes a transparent electrode. The first upper conductive structure is configured to make a signal difference between a photocurrent signal and a dark current signal of the first photosensitive element smaller than a signal difference between a photocurrent signal and a dark current signal of the second photosensitive element.

Abstract: A display device, including a pixel array substrate and a sensor element substrate, is provided. The sensor element substrate overlaps the pixel array substrate, and includes a substrate, a switch element, and a photosensitive element. The switch element is located on the substrate. The photosensitive element is electrically connected to the switch element, and includes a transparent electrode, a sensing layer, a metal electrode, and a barrier layer. The sensing layer is located on the transparent electrode. The metal electrode is located on the sensing layer, and covers a first sidewall of the sensing layer. The barrier layer covers a first sidewall of the transparent electrode. The barrier layer is located between the metal electrode and the sensing layer, or between the transparent electrode and the sensing layer.

Abstract: A display device includes a substrate, a sensing element, a lighting-emitting element, a driving element, and a transfer wire. The substrate has a first surface, a second surface opposite to the first surface, and a side surface connecting the first surface and the second surface. The sensing element is disposed on the first surface of the substrate, and the lighting-emitting element is disposed on the second surface of the substrate. The driving element is disposed on the first surface or the second surface of the substrate. The transfer wire is disposed on the side surface of the substrate. The driving element is electrically connected to the lighting-emitting element or the sensing element via the transfer wire. An orthogonal projection of the sensing element on the substrate is located outside an orthogonal projection of the lighting-emitting element on the substrate.

Abstract: A display apparatus includes a first substrate, a second substrate, a display medium, a pixel structure, a read-out transistor, a first insulating layer, a light-sensing structure, and a color filter pattern. The display medium is disposed between the first substrate and the second substrate. The pixel structure is disposed between the display medium and the first substrate. The read-out transistor has a semiconductor pattern and a control terminal. The light-sensing structure is disposed between the second substrate and the display medium, and is electrically connected to the read-out transistor. The first insulating layer is disposed between the semiconductor pattern and the control terminal of the read-out transistor. The color filter pattern is disposed between the second substrate and the display medium. The first insulating layer has an opening located outside the light-sensing structure, and the color filter pattern fills the opening of the first insulating layer.

Abstract: A display device includes a pixel array substrate, a sensing element substrate, and a display medium layer. The display medium layer is disposed between the pixel array substrate and the sensing element substrate. The sensing element substrate includes a substrate, a switch element, an insulation layer, an electrically conductive layer, a signal line, a sensing layer, and an electrode layer. The switch element is disposed on the substrate. The insulation layer covers the switch element. The electrically conductive layer is disposed on the insulation layer. The signal line is electrically connected to the electrically conductive layer. The sensing layer covers a top surface of the electrically conductive layer, a first side of the electrically conductive layer, and a second side of the electrically conductive layer. The electrode layer covers the sensing layer. The electrode layer is electrically connected to the switching element.

Abstract: A display device, including a pixel array substrate and a sensor element substrate, is provided. The sensor element substrate overlaps the pixel array substrate, and includes a substrate, a switch element, and a photosensitive element. The switch element is located on the substrate. The photosensitive element is electrically connected to the switch element, and includes a transparent electrode, a sensing layer, a metal electrode, and a barrier layer. The sensing layer is located on the transparent electrode. The metal electrode is located on the sensing layer, and covers a first sidewall of the sensing layer. The barrier layer covers a first sidewall of the transparent electrode. The barrier layer is located between the metal electrode and the sensing layer, or between the transparent electrode and the sensing layer.

Abstract: A semiconductor substrate including a data line, a scan line, a capacitance control line, a first transistor, a pixel electrode, a second transistor, a storage capacitor and a third transistor is provided. A first terminal of the first transistor is electrically connected to the data line. A control terminal of the first transistor is electrically connected to the scan line. The pixel electrode is electrically connected to a second terminal of the first transistor. A first terminal of the second transistor is electrically connected to the second terminal of the first transistor. A first terminal of the third transistor is electrically connected to the capacitance control line. A control terminal of the third transistor is electrically connected to the scan line, and a second terminal of the third transistor is electrically connected to a control terminal of the second transistor.

Abstract: A pixel structure includes a scan line, a data line, a switching element, a planarization layer, a first common electrode, a common line, a first insulating layer, a pixel electrode, a second insulating layer, and a second common electrode. The switching element includes a source and a drain. The common line is located on the planarization layer and directly connected with the first common electrode. The planarization layer is located on the scan line, the data line, and the switching element. The pixel electrode is electrically connected with the drain through a first contact hole, wherein the first contact hole penetrates through the planarization layer and the first insulating layer. The second common electrode is electrically connected with the first common electrode through a second contact hole, wherein the second contact hole penetrates through the first insulating layer and the second insulating layer. A touch panel is also provided.

Abstract: A driving method of a display apparatus is provided, wherein the display apparatus includes a plurality of pixels. The driving method includes the following steps: obtaining a first gray level and a second gray level corresponding to a first pixel and a second pixel among the pixels based on display data, wherein the first gray level and the second gray level are different; determining a first frequency and a second frequency according to the first gray level and the second gray level; and driving the first pixel to operate in the first frequency and driving the second pixel to operate in the second frequency at the same time, wherein the first frequency and the second frequency are different.

Abstract: A semiconductor substrate including a data line, a scan line, a capacitance control line, a first transistor, a pixel electrode, a second transistor, a storage capacitor and a third transistor is provided. A first terminal of the first transistor is electrically connected to the data line. A control terminal of the first transistor is electrically connected to the scan line. The pixel electrode is electrically connected to a second terminal of the first transistor. A first terminal of the second transistor is electrically connected to the second terminal of the first transistor. A first terminal of the third transistor is electrically connected to the capacitance control line. A control terminal of the third transistor is electrically connected to the scan line, and a second terminal of the third transistor is electrically connected to a control terminal of the second transistor.

Abstract: A display device includes a pixel array substrate, a sensing element substrate, and a display medium layer. The display medium layer is disposed between the pixel array substrate and the sensing element substrate. The sensing element substrate includes a substrate, a switch element, an insulation layer, an electrically conductive layer, a signal line, a sensing layer, and an electrode layer. The switch element is disposed on the substrate. The insulation layer covers the switch element. The electrically conductive layer is disposed on the insulation layer. The signal line is electrically connected to the electrically conductive layer. The sensing layer covers a top surface of the electrically conductive layer, a first side of the electrically conductive layer, and a second side of the electrically conductive layer. The electrode layer covers the sensing layer. The electrode layer is electrically connected to the switching element.

Abstract: An image-sensing display device and an image processing method are provided. The image-sensing display device includes a substrate, banks, and sensor units. The banks and the sensor units are located on the substrate. Each of the sensor units includes first to fourth light-emitting devices and a photo sensor. The first to fourth light-emitting devices are located around a corresponding bank. The first to third light-emitting devices include a red light-emitting device, a green light-emitting device, and a blue light-emitting device. The first and fourth light-emitting devices are light-emitting devices of a same color. The photo sensor is located on the corresponding bank. The photo sensor includes a first electrode, a second electrode, and a sensing layer located between the first electrode and the second electrode. The first electrode and the second electrode respectively extend from the sensing layer along a first direction and a second direction.

Abstract: A pixel structure includes a scan line, a data line, a switching element, a planarization layer, a first common electrode, a common line, a first insulating layer, a pixel electrode, a second insulating layer, and a second common electrode. The switching element includes a source and a drain. The common line is located on the planarization layer and directly connected with the first common electrode. The planarization layer is located on the scan line, the data line, and the switching element. The pixel electrode is electrically connected with the drain through a first contact hole, wherein the first contact hole penetrates through the planarization layer and the first insulating layer. The second common electrode is electrically connected with the first common electrode through a second contact hole, wherein the second contact hole penetrates through the first insulating layer and the second insulating layer. A touch panel is also provided.

Abstract: A method for fabricating a touch display device is provided. The method includes: forming a sensor on a substrate, and forming a sensing signal line electrically connected to the sensor. The method of forming the sensor includes: forming a semiconductor layer including a semiconductor pattern of the sensor on the substrate, forming a gate insulation layer on the semiconductor layer, forming a first conductor layer on the gate insulation layer, forming an interlayered insulation layer on the gate insulation layer, performing an annealing process, removing the interlayered insulation layer on a gate predetermined region after the annealing process is performed, removing the first conductor layer on the gate predetermined region, forming a gate in the gate predetermined region, and forming a second conductor layer including a source and a drain of the sensor respectively electrically connected to the semiconductor pattern of the sensor.

Abstract: An integration method of fabricating optical sensor device and thin film transistor device includes the follow steps. A substrate is provided, and a gate electrode and a bottom electrode are formed on the substrate. A first insulating layer is formed on the gate electrode and the bottom electrode, and the first insulating layer at least partially exposes the bottom electrode. An optical sensing pattern is formed on the bottom electrode. A patterned transparent semiconductor layer is formed on the first insulating layer, wherein the patterned transparent semiconductor layer includes a first transparent semiconductor pattern covering the gate electrode, and a second transparent semiconductor pattern covering the optical sensing pattern. A source electrode and a drain electrode are formed on the first transparent semiconductor pattern.

Abstract: An integration method of fabricating optical sensor device and thin film transistor device includes the follow steps. A substrate is provided, and a gate electrode and a bottom electrode are formed on the substrate. A first insulating layer is formed on the gate electrode and the bottom electrode, and the first insulating layer at least partially exposes the bottom electrode. An optical sensing pattern is formed on the bottom electrode. A patterned transparent semiconductor layer is formed on the first insulating layer, wherein the patterned transparent semiconductor layer includes a first transparent semiconductor pattern covering the gate electrode, and a second transparent semiconductor pattern covering the optical sensing pattern. A source electrode and a drain electrode are formed on the first transparent semiconductor pattern.

Abstract: A semiconductor device includes a substrate, a gate electrode, an insulating layer, a source electrode, a drain electrode, a semiconductor channel layer, a first passivation layer and a second passivation layer. The gate is formed on the substrate. The insulating layer covers the gate electrode. The source electrode and the drain electrode are positioned on the insulating layer. The semiconductor channel layer is disposed on the insulating layer, and connects the source electrode and the drain electrode. The first passivation layer covers the source electrode, the drain electrode and the semiconductor channel layer. The first passivation layer includes silicon oxide. The second passivation layer is disposed on the first passivation layer. The second passivation layer includes silicon nitride that has a hydrogen concentration of about 2.0×1022 atom/cm3 to about 3.11×1022 atom/cm3.

Abstract: A semiconductor device includes a substrate, a gate electrode, an insulating layer, a source electrode, a drain electrode, a semiconductor channel layer, a first passivation layer and a second passivation layer. The gate is formed on the substrate. The insulating layer covers the gate electrode. The source electrode and the drain electrode are positioned on the insulating layer. The semiconductor channel layer is disposed on the insulating layer, and connects the source electrode and the drain electrode. The first passivation layer covers the source electrode, the drain electrode and the semiconductor channel layer. The first passivation layer includes silicon oxide. The second passivation layer is disposed on the first passivation layer. The second passivation layer includes silicon nitride that has a hydrogen concentration of about 2.0×1022 atom/cm3 to about 3.11×1022 atom/cm3.