Patents by Inventor Shin-Shueh Chen

Shin-Shueh Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8604477
    Abstract: A pixel structure and a manufacturing method thereof are provided. In the pixel structure, an electrode of a storage capacitor is formed when an active layer is formed, and the electrode and the active layer are made of the same material. The material of the electrode and the active layer can be an oxide semiconductor with high transmittance. Therefore, a stable display frame of the pixel structure can be provided by the storage capacitor, an aperture ratio of the pixel structure can be improved, and power consumption can be further reduced.
    Type: Grant
    Filed: April 18, 2011
    Date of Patent: December 10, 2013
    Assignee: Au Optronics Corporation
    Inventors: Wu-Hsiung Lin, Po-Hsueh Chen, Shin-Shueh Chen, Guang-Ren Shen, Jia-Hong Ye
  • Patent number: 8362484
    Abstract: An optical sensor, method of making the same, and a display panel having an optical sensor. The optical sensor includes a first electrode, a second electrode, a photosensitive silicon-rich dielectric layer, and a first interfacial silicon-rich dielectric layer. The photosensitive silicon-rich dielectric layer is disposed between the first and second electrodes. The first interfacial silicon-rich dielectric layer is disposed between the first electrode and the photosensitive silicon-rich dielectric layer.
    Type: Grant
    Filed: August 3, 2009
    Date of Patent: January 29, 2013
    Assignee: AU Optronics Corp.
    Inventors: Shin-Shueh Chen, Wan-Yi Liu, Chia-Tien Peng
  • Publication number: 20120138932
    Abstract: A pixel structure and a manufacturing method thereof are provided. In the pixel structure, an electrode of a storage capacitor is formed when an active layer is formed, and the electrode and the active layer are made of the same material. The material of the electrode and the active layer can be an oxide semiconductor with high transmittance. Therefore, a stable display frame of the pixel structure can be provided by the storage capacitor, an aperture ratio of the pixel structure can be improved, and power consumption can be further reduced.
    Type: Application
    Filed: April 18, 2011
    Publication date: June 7, 2012
    Applicant: AU OPTRONICS CORPORATION
    Inventors: Wu-Hsiung Lin, Po-Hsueh Chen, Shin-Shueh Chen, Guang-Ren Shen, Jia-Hong Ye
  • Publication number: 20100244033
    Abstract: An optical sensor, method of making the same, and a display panel having an optical sensor. The optical sensor includes a first electrode, a second electrode, a photosensitive silicon-rich dielectric layer, and a first interfacial silicon-rich dielectric layer. The photosensitive silicon-rich dielectric layer is disposed between the first and second electrodes. The first interfacial silicon-rich dielectric layer is disposed between the first electrode and the photosensitive silicon-rich dielectric layer.
    Type: Application
    Filed: August 3, 2009
    Publication date: September 30, 2010
    Inventors: Shin-Shueh Chen, Wan-Yi Liu, Chia-Tien Peng
  • Patent number: 7683309
    Abstract: A photosensor includes a metal conductive layer, an interface dielectric layer, a silicon-rich dielectric layer and a transparent conductive layer. The interface dielectric layer is formed on the metal conductive layer. The silicon-rich dielectric layer is formed on the interface dielectric layer. The transparent conductive layer is formed on the silicon-rich dielectric layer. A method for fabricating a photosensor is also disclosed herein.
    Type: Grant
    Filed: January 2, 2009
    Date of Patent: March 23, 2010
    Assignee: AU Optronics Corporation
    Inventors: Shin-Shueh Chen, Wan-Yi Liu, Chia-Tien Peng, Tsung-Yi Hsu, Jen-Pei Tseng