Abstract: A method for manufacturing a semiconductor device has a step of forming a first substrate; a step of facing a first main electrode to the first metal foil, and electrically connecting the first main electrode and the first metal foil; a step of facing a second main electrode to the second metal foil, and electrically connecting the second main electrode and the second metal foil; a step of forming a second substrate; and steps of facing a surface side of the second substrate to a surface side of the first substrate; electrically connecting the third metal foil and a third main electrode provided on a main surface of the first semiconductor element; and electrically connecting the fourth metal foil and a fourth main electrode provided on a main surface of the second semiconductor element.

Abstract: A semiconductor apparatus according to aspects of the invention can include a metal base; resin case having a bonding plane facing metal base; a coating groove formed in bonding plane and holding adhesive for bonding resin case to metal base at a predetermined position, with the top plane of the wall that forms coating groove being spaced apart from the plane which contains bonding plane such that an escape space is formed between the metal base and the resin case; the escape space receiving the excess amount of adhesive which has flowed out from the coating groove; and a receiver groove communicating to the escape space and receiving securely the excess amount of adhesive which the escape space has failed to receive. If an excess amount of adhesive too much for the receiver groove to receive is coated, the excess amount of adhesive can be received in a stopper groove.

Abstract: A semiconductor device has a substrate having a front surface, and a rear surface including a fin forming region and a peripheral region surrounding the fin forming region. An insulating substrate is disposed on the front surface of the substrate. A semiconductor chip is disposed on the insulating substrate. A plurality of fins is formed in the fin forming region, and a reinforcing member is formed on the substrate through a bonding member, so as to overlap the peripheral region.

Abstract: The object of the present invention is to efficiently dissipate heat from the upper and lower main surfaces of a semiconductor device carrying a semiconductor element. A semiconductor device (1) is provided with an insulating substrate (10A), an insulating substrate (10B) provided so as to face the insulating substrate (10A), and a semiconductor element (20) disposed between the insulating substrate (10A) and the insulating substrate (10B) and having a collector electrode and an emitter electrode provided on the side opposite to that of the collector electrode. The collector electrode is electrically connected to a metal foil (10ac) provided on the insulating substrate (10A), and the emitter electrode is electrically connected to the metal foil (10bc) provided on the insulating substrate (10B). As a result, heat generated by the semiconductor element (20) is efficiently dissipated from the upper and lower main surfaces of the semiconductor device (1).

Abstract: In some aspects of the invention, an insulating substrate fixed onto a metal base plate can include an insulating plate and metal foils. A semiconductor element can be disposed on each of the metal foils. External connection terminals can be fixed to a set of ends of terminal holders, respectively. The other ends of the terminal holders can be bonded to the metal foils, respectively. External connection terminals which are main terminals through which main current flows are disposed on a lid. By preparing a plurality of lids having different layouts of the external connection terminals, in which the external connection terminals are connected to the terminal holders in the resin case, respectively, and exchanging the lids, the positions of the external connection terminals can be easily changed.

Abstract: In some aspects of the invention, an insulating substrate fixed onto a metal base plate can include an insulating plate and metal foils. A semiconductor element can be disposed on each of the metal foils. External connection terminals can be fixed to a set of ends of terminal holders, respectively. The other ends of the terminal holders can be bonded to the metal foils, respectively. External connection terminals which are main terminals through which main current flows are disposed on a lid. By preparing a plurality of lids having different layouts of the external connection terminals, in which the external connection terminals are connected to the terminal holders in the resin case, respectively, and exchanging the lids, the positions of the external connection terminals can be easily changed.

Abstract: The characteristics of a heat radiation member used in a semiconductor module are improved. A heat radiation member (10A) including an aluminum type member (20) which contains aluminum and a copper type member (30) which contains copper, which is embedded in the aluminum type member (20), and sides of which are enclosed by the aluminum type member (20) is formed. A semiconductor element is thermally bonded to the heat radiation member (10A) to fabricate a semiconductor module. The heat radiation member (10A) includes the aluminum type member (20) and the copper type member (30). As a result, it is possible to realize light weight while ensuring certain heat radiation. In addition, the copper type member (30) is enclosed by the aluminum type member (20). Accordingly, the strength of the heat radiation member (10A) can be increased.

Abstract: A semiconductor device, in which a control circuit board is mountable outside a sheath case and a power semiconductor element is placeable inside the sheath case, includes a metal step support, a shield plate and a metal ring. The support includes a base portion implanted in the sheath case, a connection portion which extends from an end of the base portion, and a step portion formed at a boundary between the base portion and the connection portion. The shield plate is disposed over the step portion such that the connection portion of the support pierces the shield plate. An end of the metal ring protrudes from an end of the connection portion over the shield plate. The semiconductor device is adapted such that the control circuit board is mounted over the protruded end of the metal ring and is fixed onto the connection portion by an engagement member.

Abstract: A semiconductor apparatus according to aspects of the invention can include a metal base; resin case having a bonding plane facing metal base; a coating groove formed in bonding plane and holding adhesive for bonding resin case to metal base at a predetermined position, with the top plane of the wall that forms coating groove being spaced apart from the plane which contains bonding plane such that an escape space is formed between the metal base and the resin case; the escape space receiving the excess amount of adhesive which has flowed out from the coating groove; and a receiver groove communicating to the escape space and receiving securely the excess amount of adhesive which the escape space has failed to receive. If an excess amount of adhesive too much for the receiver groove to receive is coated, the excess amount of adhesive can be received in a stopper groove.

Abstract: A semiconductor device includes a resin case, a plurality of external connection terminals fixedly provided on the resin case, and at least one semiconductor element provided in the resin case. At least one terminal block has at least one wiring terminal for electrically connecting the semiconductor element and the external connection terminals.

Abstract: The object of the present invention is to efficiently dissipate heat from the upper and lower main surfaces of a semiconductor device carrying a semiconductor element. A semiconductor device (1) is provided with an insulating substrate (10A), an insulating substrate (10B) provided so as to face the insulating substrate (10A), and a semiconductor element (20) disposed between the insulating substrate (10A) and the insulating substrate (10B) and having a collector electrode and an emitter electrode provided on the side opposite to that of the collector electrode. The collector electrode is electrically connected to a metal foil (10ac) provided on the insulating substrate (10A), and the emitter electrode is electrically connected to the metal foil (10bc) provided on the insulating substrate (10B). As a result, heat generated by the semiconductor element (20) is efficiently dissipated from the upper and lower main surfaces of the semiconductor device (1).

Abstract: In producing a semiconductor device, a solder alloy is prepared to contain antimony in a range of from 3 to 5 wt %, a trace amount of germanium, and a balance of tin. An insulative substrate having conductor patterns on both surfaces thereof is prepared, and a heat sink plate is mounted on a back surface of the insulative substrate by a soldering process using the solder alloy at a temperature ranging from 310 C.° to 320 C.° in a hydrogen reducing furnace. A semiconductor chip is mounted on a front surface of the insulative substrate.

Abstract: An electronic circuit device includes a lower-side substrate formed with a main circuit; an upper-side substrate formed with a drive control circuit that drivingly controls the main circuit; a support body positionally fixed above the lower-side substrate with resin in a hardened state; and a case having a peripheral portion with an outer surface that has at least a portion of an external lead-out terminal of the drive control circuit and the main circuit thereon, and a substrate storage space that accommodates the lower-side substrate on a side inward from the peripheral portion.

Abstract: A semiconductor device includes a resin case, a plurality of external connection terminals fixedly provided on the resin case, and at least one semiconductor element provided in the resin case. At least one terminal block has at least one wiring terminal for electrically connecting the semiconductor element and the external connection terminals.