Abstract: A substrate support comprises an electrostatic chuck configured to support a substrate and an edge ring and a base configured to support the electrostatic chuck. The electrostatic chuck includes a first region having a first upper surface and configured to support a substrate placed on the first upper surface, a second region having a second upper surface and configured to support an edge ring placed on the second upper surface, a first electrode disposed in the first region and to which a DC voltage is applied, a second electrode disposed below the first electrode and to which a first bias power is supplied, a third electrode disposed below the second electrode and to which the first bias power is supplied and a first gas supply line disposed between the second electrode and the third electrode.

Abstract: A pattern forming method includes forming a pattern film on a substrate. The pattern film includes a triptycene derivative having a triptycene skeleton. The triptycene skeleton includes a first plane in which position 1, position 8, and position 13 of the triptycene skeleton are arranged, and a second plane in which position 4, position 5, and position 16 of the triptycene skeleton are arranged. The triptycene derivative includes a first side chain on a one plane side, the one plane side being on a side of one plane from among the first plane and the second plane, and a second side chain on another plane side or on the one plane side, the another plane side being on a side of another plane from among the first plane and the second plane. The second side chain is different from the first side chain in an etching selectivity ratio.

Abstract: A temperature adjustment method includes adjusting a temperature of a placing table on which a target object is placed. The placing table is divided into regions and equipped with temperature detectors. The regions are set along a placing surface of the placing table. The temperature detectors are disposed in the regions, respectively. The placing table is equipped with heat exchange chambers each configured to perform heat exchange by a coolant. The heat exchange chambers are disposed in the regions, respectively. The adjusting of the temperature of the placing table includes adjusting a pressure of the coolant such that the temperature of the placing table reaches a first temperature range; and individually adjusting, after the adjusting of the pressure of the coolant, flow rates of the coolant supplied to the heat exchange chambers, respectively, such that all of temperatures measured by the temperature detectors reach the first temperature range.

Abstract: The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.

Abstract: The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.

Abstract: A plasma processing apparatus includes a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode.

Abstract: The disclosed substrate support includes a first region, a second region, a first electrode, and a second electrode. The first region is configured to hold a substrate placed thereon. The second region is provided to surround the first region and configured to hold an edge ring placed thereon. The first electrode is provided in the first region to receive a first electrical bias. The second electrode is provided in at least the second region to receive a second electrical bias. The second electrode extends below the first electrode to face the first electrode within the first region.

Abstract: A plasma processing apparatus includes a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode.

Abstract: A heat exchange unit performs heat exchange using a coolant and is disposed inside a placing table and equipped with heat exchange chambers. The heat exchange chambers are disposed in regions, respectively, set on the placing table. The regions are set along a placing surface of the placing table. A chiller device circulates the coolant with respect to the heat exchange chambers. A temperature detection device includes temperature detectors. The temperature detectors are disposed in the regions, respectively, between the respective heat exchange chambers and the placing surface. A control device controls the chiller device to adjust a pressure of the coolant such that a temperature of the placing table reaches a first temperature range, and controls the chiller device to individually adjust flow rates of the coolant supplied to the heat exchange chambers, respectively, such that all of temperatures measured by the temperature detectors reach the first temperature range.

Abstract: The present technology relates to an audio device and a driving method thereof, and a display device which are configured to make it possible to obtain sufficient sound pressure level in a wider frequency band. The audio device includes: a diaphragm; an electrodynamic vibrator that vibrates the diaphragm to output sound; and a piezoelectric vibrator that vibrates the diaphragm to output sound. The present technology can be applied to the display device.

Abstract: A substrate support includes a base, a substrate support layer disposed on the base, the substrate support layer being formed of an insulating material, and an electrostatic internal electrode layer disposed in the substrate support layer, the electrostatic internal electrode layer including a body portion and a plurality of protruding portions, the body portion having a circular shape in a plan view, and the plurality of protruding portions radially protruding from the body portion.

Abstract: A substrate support includes an electrostatic chuck formed of ceramics and holding a substrate by electrostatic attraction, a base supporting the electrostatic chuck, and a flow path through which a heat exchange medium flows. An upper surface of the flow path is formed of ceramics.

Abstract: A substrate processing apparatus is provided. The apparatus comprises a chamber; a substrate support which is arranged in the chamber and has at least one first gas supply path; and at least one control valve configured to control a flow rate or pressure of gas supplied through the at least one first gas supply path. The substrate support includes a base, and an electrostatic chuck which is arranged on the base and has an upper surface. The upper surface has a plurality of protrusions and a first annular groove group. The first annular groove group comprises a first inner annular groove, a first intermediate annular groove, and a first outer annular groove. Any one of the first inner annular groove, the first intermediate annular groove, and the first outer annular groove communicates with the at least one first gas supply path.

Abstract: A plasma processing apparatus includes a plasma processing chamber; a base disposed in the plasma processing chamber; an electrostatic chuck, disposed on the base, having a substrate support portion and an edge ring support portion on which an edge ring is disposed so as to surround a substrate; a first clamping electrode disposed in the substrate support portion; a first bias electrode disposed below the first clamping electrode in the substrate support portion; a second clamping electrode disposed in the edge ring support portion; a second bias electrode disposed below the second clamping electrode in the edge ring support portion; a first power source electrically connected to the first bias electrode; and a second power source electrically connected to the second bias electrode.

Abstract: An electrostatic chuck of an embodiment includes a base, a dielectric layer, and a chuck main body. The dielectric layer is provided on the base, and is fixed to the base. The chuck main body is mounted on the dielectric layer. The chuck main body has a ceramic main body, a first electrode, a second electrode, and a third electrode. The ceramic main body has a substrate mounting region. The first electrode is provided in the substrate mounting region. The second electrode and the third electrode form a bipolar electrode. The second electrode and the third electrode are provided in the ceramic main body, and are provided between the first electrode and the dielectric layer.

Abstract: A substrate support includes a base, a substrate support layer disposed on the base, the substrate support layer being formed of an insulating material, and an electrostatic internal electrode layer disposed in the substrate support layer, the electrostatic internal electrode layer including a body portion and a plurality of protruding portions, the body portion having a circular shape in a plan view, and the plurality of protruding portions radially protruding from the body portion.

Abstract: A stage includes an electrostatic chuck that supports a substrate and an edge ring; and a base that supports the electrostatic chuck. The electrostatic chuck includes a first region having a first upper surface and supports the substrate placed on the first upper surface; a second region having a second upper surface, provided integrally around the first region, and supports the edge ring placed on the second upper surface; a first electrode provided in the first region to apply a DC voltage; a second electrode provided in the second region to apply a DC voltage, and a third electrode to apply a bias power.

Abstract: A cooling table includes a first portion, a second portion, a first path, a second path and a third path. An electrostatic chuck is provided on the first portion, and the first portion is provided on the second portion. The first path is provided within the first portion, and the second path is provided within the second portion. The third path is connected to the first path and the second path. A chiller unit is connected to the first path and the second path. The first path is extended within the first portion along the electrostatic chuck, and the second path is extended within the second portion along the electrostatic chuck. A coolant outputted from the chiller unit passes through the first path, the third path and the second path in sequence, and then is inputted to the chiller unit.

Abstract: The step of removing the reaction product includes a step of loading a dummy wafer on the loading table, a step of increasing the temperature of the loading table, and a step of removing the reaction product after increasing the temperature of the loading table. In the step of increasing the temperature of the loading table, the temperature of the loading table is increased by opening an expansion valve between an output terminal of a condenser and an input terminal of the heat exchange unit, inputting heat to the loading table, opening a flow dividing valve between an output terminal of a compressor and the input terminal of the heat exchange unit, and adjusting an opening degree of the flow dividing valve.

Abstract: A heat exchange unit performs heat exchange using a coolant and is disposed inside a placing table and equipped with heat exchange chambers. The heat exchange chambers are disposed in regions, respectively, set on the placing table. The regions are set along a placing surface of the placing table. A chiller device circulates the coolant with respect to the heat exchange chambers. A temperature detection device includes temperature detectors. The temperature detectors are disposed in the regions, respectively, between the respective heat exchange chambers and the placing surface. A control device controls the chiller device to adjust a pressure of the coolant such that a temperature of the placing table reaches a first temperature range, and controls the chiller device to individually adjust flow rates of the coolant supplied to the heat exchange chambers, respectively, such that all of temperatures measured by the temperature detectors reach the first temperature range.