Abstract: A semiconductor power device includes a substrate, a channel layer, a barrier layer, a gate, a source, and a drain. The channel layer is located on the substrate. The barrier layer is located on the channel layer and includes a first region and a second region outside the first region. There is a first compound in the first region and a second compound in the second region. The first compound and the second compound each have an aluminum atom of a different ratio, and the aluminum composition ratio of the first compound is less than the aluminum composition ratio of the second compound. The ratio consists of a plurality of different atoms in the first compound and the second compound.

Abstract: A multi-chip package and a manufacturing method thereof are provided. The multi-chip package includes a redistribution circuit structure; a first semiconductor chip disposed on the redistribution structure and having a first active surface on which a first conductive post is disposed; a second semiconductor chip disposed above the first semiconductor chip and having a second active surface on which a first conductor is disposed; and a first encapsulant disposed on the redistribution circuit structure and encapsulating at least the first semiconductor chip, wherein the first conductive post and the first conductor are aligned and bonded to each other to electrically connect the first semiconductor chip and the second semiconductor chip.

Abstract: An electronic device is provided. The electronic device includes a touch module, a motion sensor, a memory, and a control unit. The touch module is configured to generate a touch signal. The motion sensor is configured to detect motion of the electronic device to generate motion data. The memory stores a preset motion condition. The control unit is electrically connected to the touch module, the motion sensor, and the memory, and configured to: receive the motion data; and determine whether the motion data meets the preset motion condition or not, and generate a virtual touch signal when the motion data meets the preset motion condition. A control method applied to the electronic device is further provided.

Abstract: A multi-chip package and a manufacturing method thereof are provided. The multi-chip package includes a redistribution circuit structure; a first semiconductor chip disposed on the redistribution structure and having a first active surface on which a first conductive post is disposed; a second semiconductor chip disposed above the first semiconductor chip and having a second active surface on which a first conductor is disposed; and a first encapsulant disposed on the redistribution circuit structure and encapsulating at least the first semiconductor chip, wherein the first conductive post and the first conductor are aligned and bonded to each other to electrically connect the first semiconductor chip and the second semiconductor chip.

Abstract: A multi-chip package and a manufacturing method thereof are provided. The multi-chip package includes: an interposer including a wiring structure and an interposer via electrically connected to the wiring structure; a plurality of semiconductor chips located on a first surface of the interposer and electrically connected to each other through the interposer; an encapsulant located on the first surface of the interposer and encapsulating at least a portion of the plurality of semiconductor chips; and a redistribution circuit structure located on a second surface of the interposer opposite to the first surface, wherein the plurality of semiconductor chips are electrically connected to the redistribution circuit structure through at least the interposer.

Abstract: A multi-chip package and a manufacturing method thereof are provided. The multi-chip package includes a redistribution circuit structure; a first semiconductor chip disposed on the redistribution structure and having a first active surface on which a first conductive post is disposed; a second semiconductor chip disposed above the first semiconductor chip and having a second active surface on which a first conductor is disposed; and a first encapsulant disposed on the redistribution circuit structure and encapsulating at least the first semiconductor chip, wherein the first conductive post and the first conductor are aligned and bonded to each other to electrically connect the first semiconductor chip and the second semiconductor chip.

Abstract: An image sensor package and a manufacturing method thereof are provided. The image sensor package includes a redistribution circuit structure; an image sensing chip disposed on the redistribution circuit structure and having a sensing surface, on which a sensing area and a first conductive pillar arranged in the periphery of the sensing area are disposed; a lid covering the sensing area; an encapsulant disposed on the redistribution circuit structure and encapsulating at least part of the image sensing chip and the cover; and a top tier semiconductor chip disposed above the image sensing chip and having an active surface on which a first conductor is disposed. The first conductor overlaps the image sensing chip in a direction perpendicular to the sensing surface. The first conductive pillar and the first conductor are aligned and bonded to each other to electrically connect the image sensing chip and the top tier semiconductor chip.

Abstract: A multi-chip package and a manufacturing method thereof are provided. The multi-chip package includes: an interposer including a dielectric body, a plurality of semiconductor bodies separated by the dielectric body, a through via penetrating through the dielectric body, and a wiring structure located in each of the plurality of semiconductor bodies; a plurality of semiconductor chips located side by side on a first surface of the interposer and electrically connected to the wiring structure; an encapsulant located on the first surface of the interposer and encapsulating at least a portion of the plurality of semiconductor chips; and a redistribution circuit structure located on a second surface of the interposer opposite to the first surface of the interposer and electrically connected to the plurality of semiconductor chips through the through via.

Abstract: An electronic device is provided. The electronic device includes a touch module, a motion sensor, a memory, and a control unit. The touch module is configured to generate a touch signal. The motion sensor is configured to detect motion of the electronic device to generate motion data. The memory stores a preset motion condition. The control unit is electrically connected to the touch module, the motion sensor, and the memory, and configured to: receive the motion data; and determine whether the motion data meets the preset motion condition or not, and generate a virtual touch signal when the motion data meets the preset motion condition. A control method applied to the electronic device is further provided.

Abstract: An image sensor package and a manufacturing method thereof are provided. The image sensor package includes a redistribution circuit structure; an image sensing chip disposed on the redistribution circuit structure and having a sensing surface, on which a sensing area and a first conductive pillar arranged in the periphery of the sensing area are disposed; a lid covering the sensing area; an encapsulant disposed on the redistribution circuit structure and encapsulating at least part of the image sensing chip and the cover; and a top tier semiconductor chip disposed above the image sensing chip and having an active surface on which a first conductor is disposed. The first conductor overlaps the image sensing chip in a direction perpendicular to the sensing surface. The first conductive pillar and the first conductor are aligned and bonded to each other to electrically connect the image sensing chip and the top tier semiconductor chip.

Abstract: An image sensor package and a manufacturing method thereof are provided. The image sensor package includes a redistribution circuit structure; an image sensing chip disposed on the redistribution circuit structure and having a sensing surface, on which a sensing area and a first conductive pillar arranged in the periphery of the sensing area are disposed; a lid covering the sensing area; an encapsulant disposed on the redistribution circuit structure and encapsulating at least part of the image sensing chip and the cover; and a top tier semiconductor chip disposed above the image sensing chip and having an active surface on which a first conductor is disposed. The first conductor overlaps the image sensing chip in a direction perpendicular to the sensing surface. The first conductive pillar and the first conductor are aligned and bonded to each other to electrically connect the image sensing chip and the top tier semiconductor chip.

Abstract: An image sensor package and a manufacturing method thereof are provided. The image sensor package includes a redistribution circuit structure; an image sensing chip disposed on the redistribution circuit structure and having a sensing surface, on which a sensing area and a first conductive pillar arranged in the periphery of the sensing area are disposed; a lid covering the sensing area; an encapsulant disposed on the redistribution circuit structure and encapsulating at least part of the image sensing chip and the cover; and a top tier semiconductor chip disposed above the image sensing chip and having an active surface on which a first conductor is disposed. The first conductor overlaps the image sensing chip in a direction perpendicular to the sensing surface. The first conductive pillar and the first conductor are aligned and bonded to each other to electrically connect the image sensing chip and the top tier semiconductor chip.

Abstract: A multi-chip package and a manufacturing method thereof are provided. The multi-chip package includes: an interposer including a dielectric body, a plurality of semiconductor bodies separated by the dielectric body, a through via penetrating through the dielectric body, and a wiring structure located in each of the plurality of semiconductor bodies; a plurality of semiconductor chips located side by side on a first surface of the interposer and electrically connected to the wiring structure; an encapsulant located on the first surface of the interposer and encapsulating at least a portion of the plurality of semiconductor chips; and a redistribution circuit structure located on a second surface of the interposer opposite to the first surface of the interposer and electrically connected to the plurality of semiconductor chips through the through via.

Abstract: A multi-chip package and a manufacturing method thereof are provided. The multi-chip package includes: an interposer including a wiring structure and an interposer via electrically connected to the wiring structure; a plurality of semiconductor chips located on a first surface of the interposer and electrically connected to each other through the interposer; an encapsulant located on the first surface of the interposer and encapsulating at least a portion of the plurality of semiconductor chips; and a redistribution circuit structure located on a second surface of the interposer opposite to the first surface, wherein the plurality of semiconductor chips are electrically connected to the redistribution circuit structure through at least the interposer.

Abstract: A multi-chip package and a manufacturing method thereof are provided. The multi-chip package includes a redistribution circuit structure; a first semiconductor chip disposed on the redistribution structure and having a first active surface on which a first conductive post is disposed; a second semiconductor chip disposed above the first semiconductor chip and having a second active surface on which a first conductor is disposed; and a first encapsulant disposed on the redistribution circuit structure and encapsulating at least the first semiconductor chip, wherein the first conductive post and the first conductor are aligned and bonded to each other to electrically connect the first semiconductor chip and the second semiconductor chip.

Abstract: A semiconductor device includes a substrate, a channel layer, a first electrode layer, a second electrode layer, and a gate structure. The substrate includes a first gallium oxide layer. The channel layer is disposed on the substrate, where the channel layer is a second gallium oxide layer. The first electrode layer and the second electrode layer are disposed on the channel layer. The gate structure is disposed on the channel layer between the first electrode layer and the second electrode layer. The gate structure is on the channel layer or the gate structure has a bottom portion extending into the channel layer.

Abstract: A chip package module includes an encapsulation layer, a chip, a substrate and a plurality of blind-hole electrodes. The encapsulation layer includes a first surface and a second surface opposite to the first surface. The chip includes a third surface and a fourth surface opposite to the third surface. A metal bump is fabricated on the third surface of the chip. The chip is embedded into the encapsulation layer from the first surface of the encapsulation layer. The metal bump is exposed from the first surface of the encapsulation layer. The substrate includes a metal layer, wherein the metal layer of the substrate is bonded to the chip through the metal bump. The plurality of blind-hole electrodes pass through the second surface of the encapsulation layer and are electrically connected to the metal layer of the substrate.

Abstract: A chip package module includes an encapsulation layer, a chip, a substrate and a plurality of blind-hole electrodes. The encapsulation layer includes a first surface and a second surface opposite to the first surface. The chip includes a third surface and a fourth surface opposite to the third surface. A metal bump is fabricated on the third surface of the chip. The chip is embedded into the encapsulation layer from the first surface of the encapsulation layer. The metal bump is exposed from the first surface of the encapsulation layer. The substrate includes a metal layer, wherein the metal layer of the substrate is bonded to the chip through the metal bump. The plurality of blind-hole electrodes pass through the second surface of the encapsulation layer and are electrically connected to the metal layer of the substrate.

Abstract: Various embodiments of the present disclosure relate to systems and methods for presenting content to users using expanding menus. Among other things, the expanding menus allow a range of categories of content to be simultaneously presented to a user on a display, even on smaller devices where display space is at a premium.