Patents by Inventor Shing-Kuo Wang
Shing-Kuo Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11909373Abstract: A bulk acoustic wave (BAW) resonator includes a substrate, a stack over the substrate and including a piezoelectric layer disposed between two electrode layers, and one or more edge frames. The one or more edge frames can be a raised metal frame extending parallel to a periphery of an active region of the stack and has one or more slanted cuts such that the edge frame does not form a closed loop and loss of acoustic energy in the active region through the one or more cuts is reduced, minimized or prevented. Alternatively or additionally, the one or more edge frames include a recessed edge frame in the form of a trench in the piezoelectric layer extending parallel to a boundary of the active region, and may further include a second edge frame formed on the first electrode and embedded in the piezoelectric layer.Type: GrantFiled: October 15, 2020Date of Patent: February 20, 2024Assignee: GLOBAL COMMUNICATION SEMICONDUCTORS, LLCInventors: Shing-Kuo Wang, Liping D. Hou, Kun-Mao Pan, Andy Chien-Hsiang Chen, Robert B. Stokes
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Patent number: 11817839Abstract: A single-crystal bulk acoustic wave resonators with better performance and better manufacturability and a process for fabricating the same are described. A low-acoustic-loss layer of one or more single-crystal and/or poly-crystal piezoelectric materials is epitaxially grown and/or physically deposited on a surrogate substrate, followed with the formation of a bottom electrode and then a support structure on a first side of the piezoelectric layer. The surrogate substrate is subsequently removed to expose a second side of the piezoelectric layer that is opposite to the first side. A top electrode is then formed on the second side of the piezoelectric layer, followed by further processes to complete the BAW resonator and filter fabrication using standard wafer processing steps. In some embodiments, the support structure has a cavity or an acoustic mirror adjacent the first electrode layer to minimize leakage of acoustic wave energy.Type: GrantFiled: August 25, 2020Date of Patent: November 14, 2023Assignee: GLOBAL COMMUNICATION SEMICONDUCTORS, LLCInventors: Shing-Kuo Wang, Liping Daniel Hou, Yuefei Yang
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Patent number: 11764750Abstract: Devices and processes for preparing devices are described for a bulk acoustic wave resonator. A stack includes a first electrode that is coupled to a first side of a piezoelectric layer and a second electrode that is coupled to a second side of the piezoelectric layer. The stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. A cavity frame is coupled to the first electrode and to the substrate. The cavity frame forms a perimeter around a cavity. Optionally, a heat dissipating frame is formed and coupled to the second electrode. The cavity frame and/or the heat dissipating frame improve the thermal stability of the bulk acoustic resonator.Type: GrantFiled: June 27, 2019Date of Patent: September 19, 2023Assignee: GLOBAL COMMUNICATION SEMICONDUCTORS, LLCInventors: Liping D. Hou, Kun-Mao Pan, Shing-Kuo Wang
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Patent number: 11736088Abstract: Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator and/or for obstructing propagation of lateral waves out of an active region of the bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer to form a stack having the active region. The piezoelectric layer in the active region is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. One or more perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or one or more posts or beams supporting the stack, reduce resonance of spurious waves and obstruct propagation of lateral acoustic waves out of the active region.Type: GrantFiled: March 16, 2020Date of Patent: August 22, 2023Assignee: GLOBAL COMMUNICATION SEMICONDUCTORS, LLCInventors: Robert B. Stokes, Alvin M. Kong, Liping D. Hou, Dae-Jin Hyun, Shing-Kuo Wang
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Publication number: 20220416149Abstract: A bulk acoustic wave resonator includes a substrate, and a stack that is supported by the substrate. The stack includes a first electrode, a multilayer buffer, a piezoelectric layer, and a second electrode. The multilayer buffer is disposed between the first electrode and the piezoelectric layer, and the piezoelectric layer is disposed between the multilayer buffer and the second electrode. The multilayer buffer includes two or more pairs of alternating layers. A first pair of the two or more pairs include a first layer of crystalline material having a first lattice constant, and a second layer of crystalline material having a lattice constant that is distinct from the first lattice constant.Type: ApplicationFiled: February 24, 2022Publication date: December 29, 2022Inventors: Liping D. Hou, Shing-Kuo Wang
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Patent number: 11335815Abstract: A semiconductor device includes a semiconductor die, an N-doped region, an N-contact metal, a PN junction mesa, a P-contact metal, a first passivation layer, an anode feed metal, and a cathode feed metal. The semiconductor die may include a plurality of semiconductor layers disposed on an insulating substrate. The N-doped region may define an active area of the device. The N-contact metal may be disposed on a first portion of the N-doped region. The PN junction mesa may be disposed on a second portion of the N-doped region. The PN junction mesa may comprise a hyperabrupt N-doping layer disposed on the first portion of the N-doped region and a P-doped layer disposed on the hyperabrupt N-doping layer. The P-contact metal may be disposed on the P-doped layer of the PN junction mesa. The first passivation layer may cover the semiconductor layers of the semiconductor device and have openings for the N-contact metal and the P-contact metal. The anode feed metal may connect the P-contact metal to a first bond pad.Type: GrantFiled: February 20, 2021Date of Patent: May 17, 2022Assignee: Global Communication Semiconductors, LLCInventors: Yuefei Yang, Shing-Kuo Wang, Wing Yau
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Patent number: 11276764Abstract: A device including a semiconductor die, a first contact, a second contact, a third contact, a first passivation layer, a second passivation layer and an interconnect metal. The semiconductor die may include a plurality of semiconductor layers disposed on a GaAs substrate. The first contact may be electrically coupled to a semiconductor emitter layer. The second contact may be electrically coupled to a semiconductor base layer. The third contact may be electrically coupled to a semiconductor sub-collector layer. The first passivation layer may cover one or more of the semiconductor and the contacts. The first passivation layer may comprise an inorganic insulator. The second passivation layer may comprise an inorganic insulator or organic polymer with low dielectric constant deposited on the passivation layer. The interconnect metal may be coupled to the first contact and separated from the first passivation layer by the second passivation layer.Type: GrantFiled: August 9, 2020Date of Patent: March 15, 2022Assignee: Global Communication Semiconductors, LLCInventors: Yuefei Yang, Shing-Kuo Wang, Dheeraj Mohata, Liping Daniel Hou
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Publication number: 20210250012Abstract: Devices and processes for preparing devices are described for a bulk acoustic wave resonator. A stack formed over a substrate includes a piezoelectric film element, a first (e.g., bottom) electrode coupled to a first side of the piezoelectric film element, and a second (e.g., top) electrode that is coupled to a second side of the piezoelectric film element. A cavity is positioned between the stack and the substrate. The resonator includes one or more planarizing layers, including a first planarizing layer around the cavity, wherein a first portion of the first electrode is adjacent the cavity and a second portion of the first electrode is adjacent the first planarizing layer. The resonator optionally includes an air reflector around the perimeter of the piezoelectric film element. The stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode.Type: ApplicationFiled: April 26, 2021Publication date: August 12, 2021Inventors: Liping D. Hou, Kun-Mao Pan, Shing-Kuo Wang
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Publication number: 20210111702Abstract: A bulk acoustic wave (BAW) resonator includes a substrate, a stack over the substrate and including a piezoelectric layer disposed between two electrode layers, and one or more edge frames. The one or more edge frames can be a raised metal frame extending parallel to a periphery of an active region of the stack and has one or more slanted cuts such that the edge frame does not form a closed loop and loss of acoustic energy in the active region through the one or more cuts is reduced, minimized or prevented. Alternatively or additionally, the one or more edge frames include a recessed edge frame in the form of a trench in the piezoelectric layer extending parallel to a boundary of the active region, and may further include a second edge frame formed on the first electrode and embedded in the piezoelectric layer.Type: ApplicationFiled: October 15, 2020Publication date: April 15, 2021Inventors: Shing-Kuo Wang, Liping D. Hou, Kun-Mao Pan, Andy Chien-Hsiang Chen, Robert B. Stokes
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Publication number: 20210111699Abstract: A bulk acoustic (BAW) resonator having a multilayer base and method of fabricating the bulk acoustic resonator is disclosed. A BAW resonator comprises a substrate having a cavity and including a frame around the cavity, a multilayer base adjacent the cavity and supported by the frame. The multilayer base includes a first layer of crystalline material having a first lattice constant and a second layer of crystalline material having a second lattice constant that is distinct from the first lattice constant. The BAW resonator further includes a stack over the multilayer base. The stack includes a first electrode formed on the multilayer base, a piezoelectric layer having a first side coupled to the first electrode and a second side opposite to the first side of the piezoelectric layer, and a second electrode coupled to the second side of the piezoelectric layer.Type: ApplicationFiled: October 15, 2020Publication date: April 15, 2021Inventors: Liping D. Hou, Alexander M. Vigo, Shing-Kuo Wang
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Publication number: 20210111701Abstract: A bulk acoustic wave (BAW) resonator with better performance and better manufacturability is described. A BAW resonator includes a substrate, a BAW stack disposed over the substrate, a first temperature compensation layer disposed between the substrate and the stack, and a second temperature compensation layer disposed over the stack. The BAW stack includes a piezoelectric layer disposed between a first electrode and a second electrode. A method of making a BAW resonator is also disclosed. The method includes forming a first base layer over a substrate including a layer of sacrificial material and a frame surrounding the layer of sacrificial material, forming a first temperature compensation layer over the first base layer, forming a BAW stack over the first temperature compensation layer, forming a second temperature compensation layer over the BAW stack, and removing the layer of sacrificial material to form a cavity adjacent the base layer.Type: ApplicationFiled: October 15, 2020Publication date: April 15, 2021Inventors: Liping D. Hou, Shing-Kuo Wang
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Publication number: 20210111693Abstract: A bulk acoustic wave resonator with better performance and better manufacturability is described. The bulk acoustic wave resonator includes a composite piezoelectric film. The composite piezoelectric film includes a first sublayer of a first piezoelectric material, a second sublayer of a second piezoelectric material, and a third sublayer of a third piezoelectric material that is disposed between the first sublayer and the second sublayer. The first piezoelectric material has a first lattice constant, the second piezoelectric material has a second lattice constant, and the third piezoelectric material has a third lattice constant that is distinct from the first lattice constant and from the second lattice constant. The composite piezoelectric film may include a sequence of alternating sublayers of two or more distinct piezoelectric materials, or a sequence of composition graded layers having gradually changing composition.Type: ApplicationFiled: October 15, 2020Publication date: April 15, 2021Inventors: Liping D. Hou, Shing-Kuo Wang
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Publication number: 20200389150Abstract: A single-crystal bulk acoustic wave resonators with better performance and better manufacturability and a process for fabricating the same are described. A low-acoustic-loss layer of one or more single-crystal and/or poly-crystal piezoelectric materials is epitaxially grown and/or physically deposited on a surrogate substrate, followed with the formation of a bottom electrode and then a support structure on a first side of the piezoelectric layer. The surrogate substrate is subsequently removed to expose a second side of the piezoelectric layer that is opposite to the first side. A top electrode is then formed on the second side of the piezoelectric layer, followed by further processes to complete the BAW resonator and filter fabrication using standard wafer processing steps. In some embodiments, the support structure has a cavity or an acoustic mirror adjacent the first electrode layer to minimize leakage of acoustic wave energy.Type: ApplicationFiled: August 25, 2020Publication date: December 10, 2020Inventors: Shing-Kuo Wang, Liping Daniel Hou, Yuefei Yang
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Publication number: 20200313648Abstract: Design and processes are described for fabricating single-crystal bulk acoustic wave resonators with better performance and better manufacturability. A low-acoustic-loss single-crystal piezoelectric layer is epitaxially grown on a substrate, followed with the formation of bottom electrode, metallic cavity frames, and gap filler material on the piezoelectric layer. Matching metallic cavity frames and gap filler material are formed on a second substrate. The two wafers are then bonded together by metal-to-metal bonding of the metallic cavity frames on the first wafer to the matching metallic cavity frame on the second wafer to form a sealed cavity between the bottom electrodes and the second wafer. The first substrate is then removed to expose the piezoelectric layer. This second wafer and the structures thereon are then ready to complete the BAW resonator and filter fabrication using standard wafer processing steps.Type: ApplicationFiled: March 28, 2019Publication date: October 1, 2020Inventors: Shing-Kuo Wang, Liping Daniel Hou
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Publication number: 20200220520Abstract: Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator and/or for obstructing propagation of lateral waves out of an active region of the bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer to form a stack having the active region. The piezoelectric layer in the active region is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. One or more perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or one or more posts or beams supporting the stack, reduce resonance of spurious waves and obstruct propagation of lateral acoustic waves out of the active region.Type: ApplicationFiled: March 16, 2020Publication date: July 9, 2020Inventors: Robert B. Stokes, Alvin M. Kong, Liping D. Hou, Dae-Jin Hyun, Shing-Kuo Wang
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Patent number: 10601391Abstract: Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer. The piezoelectric layer is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. Perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or posts or beams supporting the second electrode, reduce resonance of spurious waves.Type: GrantFiled: October 20, 2017Date of Patent: March 24, 2020Assignee: GLOBAL COMMUNICATION SEMICONDUCTORS, LLC.Inventors: Robert B. Stokes, Alvin M. Kong, Liping Daniel Hou, Dae-Jin Hyun, Shing-Kuo Wang
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Publication number: 20200028482Abstract: Devices and processes for preparing devices are described for a bulk acoustic wave resonator. A stack includes a first electrode that is coupled to a first side of a piezoelectric layer and a second electrode that is coupled to a second side of the piezoelectric layer. The stack is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. A cavity frame is coupled to the first electrode and to the substrate. The cavity frame forms a perimeter around a cavity. Optionally, a heat dissipating frame is formed and coupled to the second electrode. The cavity frame and/or the heat dissipating frame improve the thermal stability of the bulk acoustic resonator.Type: ApplicationFiled: June 27, 2019Publication date: January 23, 2020Inventors: Liping D. Hou, Kun-Mao Pan, Shing-Kuo Wang
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Publication number: 20180138885Abstract: Devices and processes for preparing devices are described for reducing resonance of spurious waves in a bulk acoustic resonator. A first electrode is coupled to a first side of a piezoelectric layer and a second electrode is coupled to a second side of the piezoelectric layer. The piezoelectric layer is configured to resonate in response to an electrical signal applied between the first electrode and the second electrode. Perforations in the first electrode, the piezoelectric layer and/or the second electrode, and/or posts or beams supporting the second electrode, reduce resonance of spurious waves.Type: ApplicationFiled: October 20, 2017Publication date: May 17, 2018Inventors: Robert B. Stokes, Alvin M. Kong, Liping Daniel Hou, Dae-Jin Hyun, Shing-Kuo Wang
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Patent number: 9269784Abstract: A device includes a semiconductor die. The semiconductor die includes a plurality of semiconductor layers disposed on a GaAs substrate, including a first semiconductor layer having a first band-gap and a second semiconductor layer having a second band-gap. The semiconductor die further includes a contact layer disposed epitaxially upon the first semiconductor layer. The contact layer has a thickness that is less than a critical thickness. The second semiconductor layer is epitaxially disposed upon the contact layer. The contact layer has a third band-gap that is less than the first band-gap and the second band-gap. The semiconductor die further includes a conductive layer disposed upon the contact layer to form an ohmic contact. The conductive layer comprises one or more metal layers compatible with silicon processing techniques.Type: GrantFiled: August 19, 2014Date of Patent: February 23, 2016Assignee: GLOBAL COMMUNICATION SEMICONDUCTORS, INC.Inventors: Yuefei Yang, Shing-Kuo Wang, Liping D. Hou
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Publication number: 20150054036Abstract: A device includes a semiconductor die. The semiconductor die includes a plurality of semiconductor layers disposed on a GaAs substrate, including a first semiconductor layer having a first band-gap and a second semiconductor layer having a second band-gap. The semiconductor die further includes a contact layer disposed epitaxially upon the first semiconductor layer. The contact layer has a thickness that is less than a critical thickness. The second semiconductor layer is epitaxially disposed upon the contact layer. The contact layer has a third band-gap that is less than the first band-gap and the second band-gap. The semiconductor die further includes a conductive layer disposed upon the contact layer to form an ohmic contact. The conductive layer comprises one or more metal layers compatible with silicon processing techniques.Type: ApplicationFiled: August 19, 2014Publication date: February 26, 2015Inventors: Yuefei Yang, Shing-Kuo Wang, Liping D. Hou