Abstract: A top-blowing lance nozzle is configured to freely switch an adequate expansion condition so as to control an oxygen-blowing amount and a jetting velocity independently of each other without requiring a plurality of lance nozzles or a mechanically movable part. A lance nozzle is configured to blow refining oxygen to molten iron charged in a reaction vessel while a gas is blown from a top-blowing lance to the molten iron. One or more blowing holes for blowing a working gas are on an inner wall side surface of the nozzle, at a site where the lance nozzle has a minimum cross-sectional area in a nozzle axis direction or at a neighboring site of the site.

Abstract: A vibration damper that damp vibrations transmitted between a drive unit and a support body. The vibration damper comprises: an elastic member interposed between the drive unit and the support body; a rotor supported by the drive unit or the support body; and a vibration translating mechanism that rotates the rotor and reciprocates the rotor between the drive unit and the support body, in response to the vibrations acting in a vibrating direction to isolate the drive unit and the support body away from each other and bring the drive unit and the support body closer together.

Abstract: A robot hand includes at least one finger. The finger includes a first member configured to come into contact with an object to apply a gripping force to the object, and a second member movable with respect to the first member to come into contact with the object.

Abstract: There is provided a robot hand that grips and positions a work with a certain gripping force, and that rapidly conveys the work to execute assembling after gripping the work.

Abstract: There is provided a robot hand that grips and positions a work with a certain gripping force, and that rapidly conveys the work to execute assembling after gripping the work.

Abstract: An external input device is employed, the external input device being configured to operate a robot system including an imaging apparatus capable of changing an imaging point of view and a robot apparatus, the external input device includes a display area, a robot apparatus operation unit configured to operate the robot apparatus, an imaging operation unit configured to operate the imaging apparatus, and an image display unit configured to display an image captured by the imaging apparatus, wherein the robot apparatus operation unit, the imaging operation unit, and the image display unit are displayed on the display area, and wherein the image display unit is disposed between the robot apparatus operation unit and the imaging operation unit.

Abstract: A method of controlling a holding apparatus configured to hold plural kinds of target objects by plural fingers in plural relative postures includes calculating, on a basis of information about holding force of the fingers in a relative posture for a target object, an amount of positional deviation of the target object held by the fingers, and correcting, on a basis of the amount of positional deviation calculated in the calculating, a position of the target object held by the fingers.

Abstract: A method includes controlling a robot body performed by a controller. The robot body includes a finger, a driving unit, and a detection unit. The driving unit is configured to move the finger. The detection unit is configured to output a signal corresponding to a state of the finger moved by the driving unit. The method includes causing the finger to hold a workpiece, causing the robot body to start a predetermined operation while causing the finger to keep holding the workpiece, if a detected value based on the signal outputted from the detection unit is within a first range, and causing the robot body to continue to perform the predetermined operation until completion of the predetermined operation, if the detected value is within a second range in the predetermined operation. The second range is different from the first range.

Abstract: A method for determining a microstructure of a titanium alloy includes determining a microstructure morphology of a titanium alloy based on a relational expression including a mechanical property parameter relating to a mechanical property of the titanium alloy, a microstructure parameter relating to a microstructure of the titanium alloy, and a composition parameter relating to a composition of the titanium alloy.

Abstract: A robot calibrating apparatus calibrating a command value for a robot body 2 whose position and orientation is controlled based on the command value, includes an operating unit configured to calculate a calibrating function of calibrating the command value, based on the difference between an ideal position and orientation of the robot body 2 and an actual position and orientation of the robot body 2. The ideal position and orientation is operated based on a command value RHTcom for calibration used during calibration or on a control result value which is a result of control according to the command value. The actual position and orientation is operated based on a measurement value RHT?meas for calibration acquired by a camera 3 arranged at a prescribed relative position and orientation with respect to the robot body 2 during the robot body 2 being controlled according to the command value for calibration.

Abstract: There is provided a robot hand that grips and positions a work with a certain gripping force, and that rapidly conveys the work to execute assembling after gripping the work.

Abstract: A method of controlling a holding apparatus configured to hold plural kinds of target objects by plural fingers in plural relative postures includes calculating, on a basis of information about holding force of the fingers in a relative posture for a target object, an amount of positional deviation of the target object held by the fingers, and correcting, on a basis of the amount of positional deviation calculated in the calculating, a position of the target object held by the fingers.

Abstract: A wafer placement apparatus 30 includes a ceramic substrate 32 having a wafer placement surface, a heater electrode 34 embedded in the ceramic substrate 32, and feeder rods 36 and 37 made of Cu and electrically connected to the heater electrode 34 through a surface of the ceramic substrate 32 opposite the wafer placement surface. When one end and the other end of the feeder rod 36 in an unengaged state are a fixed end and a free end, respectively, and when a relationship between a stress applied to the feeder rod 36 at a position 50 mm apart from the fixed end toward the free end and a strain at the position is obtained, the stress is in a range of 5 to 10 N when the strain is 1 mm.

Abstract: A robot calibrating apparatus calibrating a command value for a robot body 2 whose position and orientation is controlled based on the command value, includes an operating unit configured to calculate a calibrating function of calibrating the command value, based on the difference between an ideal position and orientation of the robot body 2 and an actual position and orientation of the robot body 2. The ideal position and orientation is operated based on a command value RHTcom for calibration used during calibration or on a control result value which is a result of control according to the command value. The actual position and orientation is operated based on a measurement value RHT?meas for calibration acquired by a camera 3 arranged at a prescribed relative position and orientation with respect to the robot body 2 during the robot body 2 being controlled according to the command value for calibration.

Abstract: A robot calibrating apparatus calibrating a command value for a robot body 2 whose position and orientation is controlled based on the command value, includes an operating unit configured to calculate a calibrating function of calibrating the command value, based on the difference between an ideal position and orientation of the robot body 2 and an actual position and orientation of the robot body 2. The ideal position and orientation is operated based on a command value RHTcom for calibration used during calibration or on a control result value which is a result of control according to the command value. The actual position and orientation is operated based on a measurement value RHT?meas for calibration acquired by a camera 3 arranged at a prescribed relative position and orientation with respect to the robot body 2 during the robot body 2 being controlled according to the command value for calibration.

Abstract: A control apparatus calculates a calibration value based on a position in the robot coordinate system 41 and a position in the vision coordinate system 42, for at least three teaching points set within a calibration area. Markers 21 of two of the three teaching points have the same inclination in relation to an optical axis of a camera 3 as a visual sensor, and the two points are placed on different positions of the same plane normal to the optical axis. The remaining one of the three teaching points other than the two points is set such that the inclination of the marker 21 in relation to the optical axis is different from that of the two points. As a result, influence of a large quantization error in the optical axis direction as a measurement error of the camera 3 can be reduced.

Abstract: A member for a semiconductor manufacturing apparatus includes an AlN electrostatic chuck, a cooling plate, and a cooling plate-chuck bonding layer. The cooling plate includes first to third substrates, a first metal bonding layer between the first and second substrates, a second metal bonding layer between the second and third substrates, and a refrigerant path. The first to third substrates are formed of a dense composite material containing SiC, Ti3SiC2, and TiC. The metal bonding layers are formed by thermal compression bonding of the substrates with an Al—Si—Mg metal bonding material interposed between the first and second substrates and between the second and third substrates.

Abstract: A member for a semiconductor manufacturing apparatus includes an alumina electrostatic chuck, a cooling plate, and a cooling plate-chuck bonding layer. The cooling plate includes first to third substrates, a first metal bonding layer between the first and second substrates, a second metal bonding layer between the second and third substrates, and a refrigerant path. The first to third substrates are formed of a dense composite material containing Si, SiC, and Ti. The metal bonding layers are formed by thermal compression bonding of the substrates with an Al—Si—Mg or Al—Mg metal bonding material interposed between the first and second substrates and between the second and third substrates.

Abstract: A robot calibrating apparatus calibrating a command value for a robot body 2 whose position and orientation is controlled based on the command value, includes an operating unit configured to calculate a calibrating function of calibrating the command value, based on the difference between an ideal position and orientation of the robot body 2 and an actual position and orientation of the robot body 2. The ideal position and orientation is operated based on a command value RHTcom for calibration used during calibration or on a control result value which is a result of control according to the command value. The actual position and orientation is operated based on a measurement value RHT?meas for calibration acquired by a camera 3 arranged at a prescribed relative position and orientation with respect to the robot body 2 during the robot body 2 being controlled according to the command value for calibration.

Abstract: A member 10 for a semiconductor manufacturing apparatus includes an alumina electrostatic chuck 20, a cooling plate 30, and a cooling plate-chuck bonding layer 40. The cooling plate 30 includes first to third substrates 31 to 33, a first metal bonding layer 34 between the first and second substrates 31 and 32, a second metal bonding layer 35 between the second and third substrates 32 and 33, and a refrigerant path 36. The first to third substrates 31 to 33 are formed of a dense composite material containing Si, SiC, and Ti. The metal bonding layers 34 and 35 are formed by thermal compression bonding of the substrates 31 to 33 with an Al—Si—Mg or Al—Mg metal bonding material interposed between the first and second substrates 31 and 32 and between the second and third substrates 32 and 33.