Abstract: A member 10 for a semiconductor manufacturing apparatus includes an AlN electrostatic chuck 20, a cooling plate 30, and a cooling plate-chuck bonding layer 40. The cooling plate 30 includes first to third substrates 31 to 33, a first metal bonding layer 34 between the first and second substrates 31 and 32, a second metal bonding layer 35 between the second and third substrates 32 and 33, and a refrigerant path 36. The first to third substrates 31 to 33 are formed of a dense composite material containing SiC, Ti3 SiC2, and TiC. The metal bonding layers 34 and 35 axe formed by thermal compression bonding of the substrates 31 to 33 with an Al—Si—Mg metal bonding material interposed between the first and second substrates 31 and 32 and between the second and third substrates 32 and 33.

Abstract: A control apparatus calculates a calibration value based on a position in the robot coordinate system 41 and a position in the vision coordinate system 42, for at least three teaching points set within a calibration area. Markers 21 of two of the three teaching points have the same inclination in relation to an optical axis of a camera 3 as a visual sensor, and the two points are placed on different positions of the same plane normal to the optical axis. The remaining one of the three teaching points other than the two points is set such that the inclination of the marker 21 in relation to the optical axis is different from that of the two points. As a result, influence of a large quantization error in the optical axis direction as a measurement error of the camera 3 can be reduced.