Abstract: A permanent magnet (21) is provided to the mirror (20). The mirror (20) can oscillate with respect to a reference plane (101), by using a first axis (201) and a second axis (202) not being parallel to the first axis (201) as oscillation axes. The first electromagnet (30) causes the mirror (20) to oscillate with respect to the first axis (201). The second electromagnet (40) causes the mirror (20) to oscillate with respect to the second axis (202). Then, at least either (A) or (B) indicated below is established in the actuator (10). (A) The first electromagnet (30) is not line-symmetric with respect to the first axis (201) as viewed from a direction perpendicular to the reference plane (101). (B) The second electromagnet (40) is not line-symmetric with respect to the second axis (202) as viewed from a direction perpendicular to the reference plane (101).

Abstract: An actuator includes a mirror and an electromagnet. The mirror is provided with a permanent magnet and is capable of oscillating about a first axis and a second axis as oscillation axes with respect to a reference plane. The second axis is non-parallel to the first axis. The electromagnet has a yoke and a coil and applies a magnetic flux to the permanent magnet. Both ends of the yoke face each other at least partially across a gap. When viewed from a direction perpendicular to the reference plane, a center Cg of the gap does not overlap a center Cm of the permanent magnet. A current I1 for causing the mirror to oscillate with respect to the first axis and a current I2 for causing the mirror to oscillate with respect to the second axis are superimposed and flowed through the coil.

Abstract: An information processing apparatus comprising: a detection unit configured to detect a press by a user on a predetermined region of Web content; a rendering unit configured to execute rendering in response to the press; and a notification unit configured to notify the user when the detection unit detects that the predetermined region is pressed again while the rendering unit is executing the rendering.

Abstract: An electrically heated catalytic device is provided. The electrically heated catalytic device includes a cylindrical catalyst carrier. Two electrode units are attached to a side surface of the catalyst carrier. The side surface of the catalyst carrier includes slits each extending in an axial direction of the catalyst carrier. Each slit is filled with a filler that has a lower Young's modulus than the catalyst carrier. An average Young's modulus is a value obtained by averaging the Young's modulus of the filler at different portions of the slit over an entire length of the slit in the axial direction. The slits include a first slit and a second slit. The average Young's modulus of the first slit is a first value. The average Young's modulus of the second slit is a second value that is smaller than the first value.

Abstract: A mirror scanner comprising: a mirror having a first surface that reflects a light, the mirror being swingable about a swing axis; a permanent magnet disposed on a second surface which is a surface opposite of the first surface of the mirror; and a yoke having a pair of magnetic field generating ends and a pair of extending portions, the pair of magnetic field generating ends being disposed at positions facing the permanent magnet in the second surface side of the mirror, the pair of extending portions extending along the second surface of the mirror.

Abstract: An electrically heated catalytic device is provided. The electrically heated catalytic device includes a cylindrical catalyst carrier. Two electrode units are attached to a side surface of the catalyst carrier. The side surface of the catalyst carrier includes slits each extending in an axial direction of the catalyst carrier. Each slit is filled with a filler that has a lower Young's modulus than the catalyst carrier. An average Young's modulus is a value obtained by averaging the Young's modulus of the filler at different portions of the slit over an entire length of the slit in the axial direction. The slits include a first slit and a second slit. The average Young's modulus of the first slit is a first value. The average Young's modulus of the second slit is a second value that is smaller than the first value.

Abstract: A semiconductor device may be provided with a first member, a second member joined to a first region of the first member via a first solder layer and a third member joined to a second region of the first member via a second solder layer. The first region and the second region are located on one side of the first member. The first solder layer contains a plurality of support particles that is constituted of a material having a higher melting point than the first solder layer. The second solder layer does not contain any support particles.

Abstract: An insulated heat dissipation substrate including: a ceramic substrate; and a conductor layer bonded onto at least one of main surfaces of the ceramic substrate, wherein the conductor layer includes: an upper surface; a lower surface; and a side surface 1 connecting the upper surface with the lower surface; the ceramic substrate includes: a lowest portion; a side surface 2 connecting the lowest portion with the side surface 1 of the conductor layer; and a bonding surface at a position higher than the lowest portion, the bonding surface being bonded to the lower surface of the conductor layer; an absolute value (|???|) is 20° or less on average; and the side surface 1 has a receding portion from an end of the upper surface in the normal direction relative to the tangential line of the contour of the conductor layer as viewed in plane.

Abstract: An insulated heat dissipation substrate including: a ceramic substrate; and a conductor layer bonded onto at least one of main surfaces of the ceramic substrate, wherein the conductor layer includes an upper surface, a lower surface bonded to the ceramic substrate, and a side surface connecting the upper surface with the lower surface wherein, a tip of the upper surface recedes in the normal direction of the conductor layer from a tip of the lower surface, the side surface has a contour having an inwardly recessed curve line and having a portion receding in the normal direction of the conductor layer from the tip of the upper surface, and a connection portion between the upper surface and the side surface has a rounded shape such that a maximum radius R of a circle is 0.1 ?m?R?5 ?m on average.

Abstract: A semiconductor device may include a first semiconductor chip, a second semiconductor chip, an encapsulant encapsulating the first and second semiconductor chips, a first signal terminal extending over inside and outside of the encapsulant and connected to the first semiconductor chip inside the encapsulant, and a second signal terminal extending over the inside and the outside of the encapsulant and connected to the second semiconductor chip inside the encapsulant. The first and second signal terminals may protrude from the encapsulant in a same direction. The first signal terminal may include, inside the encapsulant, a section where the first signal terminal extends farther away from the second signal terminal along a direction toward the first semiconductor chip. The second signal terminal may include, inside the encapsulant, a section where the second signal terminal extends farther away from the first signal terminal along a direction toward the second semiconductor chip.

Abstract: A semiconductor device may be provided with a first member, a second member joined to a first region of the first member via a first solder layer and a third member joined to a second region of the first member via a second solder layer. The first region and the second region are located on one side of the first member. The first solder layer contains a plurality of support particles that is constituted of a material having a higher melting point than the first solder layer. The second solder layer does not contain any support particles.

Abstract: A method of manufacturing a semiconductor device that includes a resin package sealing a semiconductor element and a pair of metal plates interposing the semiconductor element therebetween, in which each of the pair of metal plates is exposed at corresponding one of both surfaces of the resin package is disclosed. The method may include preparing an assembly in which the semiconductor element is connected to the pair of metal plates; setting the assembly in a cavity of a mold, wherein one metal plate is in contact with a bottom surface of the cavity and a space is provided above the other metal plate; forming the resin package by injecting a molten resin into the cavity so as to cover an upper side of the other metal plate, stopping the injecting of the molten resin with a part of the space on an upper side of the cavity unfilled.

Abstract: An insulated heat dissipation substrate including: a ceramic substrate; and a conductor layer bonded onto at least one of main surfaces of the ceramic substrate, wherein the conductor layer includes an upper surface, a lower surface bonded to the ceramic substrate, and a side surface connecting the upper surface with the lower surface wherein, a tip of the upper surface recedes in the normal direction of the conductor layer from a tip of the lower surface, the side surface has a contour having an inwardly recessed curve line and having a portion receding in the normal direction of the conductor layer from the tip of the upper surface, and a connection portion between the upper surface and the side surface has a rounded shape such that a maximum radius R of a circle is 0.1 ?m?R?5 ?m on average.

Abstract: An insulated heat dissipation substrate including: a ceramic substrate; and a conductor layer bonded onto at least one of main surfaces of the ceramic substrate, wherein the conductor layer includes: an upper surface; a lower surface; and a side surface 1 connecting the upper surface with the lower surface; the ceramic substrate includes: a lowest portion; a side surface 2 connecting the lowest portion with the side surface 1 of the conductor layer; and a bonding surface at a position higher than the lowest portion, the bonding surface being bonded to the lower surface of the conductor layer; an absolute value (|???|) is 20° or less on average; and the side surface 1 has a receding portion from an end of the upper surface in the normal direction relative to the tangential line of the contour of the conductor layer as viewed in plane.

Abstract: A semiconductor device includes an electrode plate, a metallic member, and solder connecting the metallic member with the electrode plate. On a surface of the electrode plate, a first groove and a group of second grooves are provided. The first groove has first to fourth linear parts. The group of second grooves is arranged within a range surrounded by the first groove, and has end portions on an outer periphery side that are connected with the first groove. The group of second grooves includes first to fourth sets. Each of the sets includes a plurality of second grooves connected with the first to fourth linear parts. When the metallic member is seen in a lamination direction of the electrode plate and the metallic member, an outer peripheral edge of a region of the metallic member, the region being connected with the solder, goes across the first to fourth sets.

Abstract: A semiconductor device may include a first semiconductor chip, a second semiconductor chip, an encapsulant encapsulating the first and second semiconductor chips, a first signal terminal extending over inside and outside of the encapsulant and connected to the first semiconductor chip inside the encapsulant, and a second signal terminal extending over the inside and the outside of the encapsulant and connected to the second semiconductor chip inside the encapsulant. The first and second signal terminals may protrude from the encapsulant in a same direction. The first signal terminal may include, inside the encapsulant, a section where the first signal terminal extends farther away from the second signal terminal along a direction toward the first semiconductor chip. The second signal terminal may include, inside the encapsulant, a section where the second signal terminal extends farther away from the first signal terminal along a direction toward the second semiconductor chip.

Abstract: A semiconductor device includes a first metal plate and a second metal plate which interpose a first semiconductor element therebetween, the first metal plate and the second metal plate being bonded to the first semiconductor element with first soldered portions; and includes a third metal plate and a fourth metal plate which interpose a second semiconductor element therebetween, the third metal plate and the fourth metal plate being bonded to the second semiconductor element with second soldered portions. A first joint provided at an edge of the first metal plate and a second joint provided at an edge of the fourth metal plate are bonded with a third soldered portion. A total sum of thicknesses of the first soldered portions is different from a thickness of the third soldered portion, a solidifying point of the thinner one is higher than a solidifying point of the thicker one.

Abstract: A semiconductor device includes: a semiconductor element; a heat sink including a first surface and a second surface, the semiconductor element being joined to the first surface, the second surface being a surface on an opposite side of the first surface; and a package that is in contact with the semiconductor element and the first surface of the heat sink, the package including a recess portion in an outer face, wherein the heat sink includes a thick portion, and a thin portion having a thickness that is smaller than that of the thick portion, and the thin portion is located on a line connecting an outer face of the semiconductor element and the recess portion in a shortest distance.

Abstract: A method of manufacturing a semiconductor device that includes a resin package sealing a semiconductor element and a pair of metal plates interposing the semiconductor element therebetween, in which each of the pair of metal plates is exposed at corresponding one of both surfaces of the resin package is disclosed. The method may include preparing an assembly in which the semiconductor element is connected to the pair of metal plates; setting the assembly in a cavity of a mold, wherein one metal plate is in contact with a bottom surface of the cavity and a space is provided above the other metal plate; forming the resin package by injecting a molten resin into the cavity so as to cover an upper side of the other metal plate, stopping the injecting of the molten resin with a part of the space on an upper side of the cavity unfilled.

Abstract: A semiconductor device may include: a first and a second semiconductor elements each including electrodes on both surfaces thereof; a first and a second metal plates which interpose the first semiconductor element, the metal plates respectively being bonded to the first semiconductor element via first soldered portions; and a third and a fourth metal plates which interpose the second semiconductor element, the metal plates respectively being bonded to the second semiconductor element via second soldered portions; wherein a first joint is provided at the first metal plate, a second joint is provided at the fourth metal plate, the joints are bonded via a third soldered portion, and a solidifying point of the first soldered portions is higher than a solidifying point of the third soldered portion, and a solidifying point of the second soldered portions is higher than the solidifying point of the third soldered portion.