Abstract: This semiconductor laser element includes a semiconductor element layer including an active layer and having an emitting side cavity facet and a reflecting side cavity facet, and a facet coating film on a surface of the emitting side cavity facet. The facet coating film includes a photocatalytic layer arranged on an outermost surface of the facet coating film and a dielectric layer arranged between the photocatalytic layer and the emitting side cavity facet. A thickness of the dielectric layer is set to a thickness defined by m×?/(2×n) (m is an integer), where a wavelength of a laser beam emitted from the active layer is ? and a refractive index of the dielectric layer is n, and at least 1 ?m.

Abstract: A semiconductor laser device includes a first cavity facet formed on an end of the semiconductor element layer on a light-emitting side of a region including the light emitting layer, a first insulating film, made of AlN, formed on a surface of the first cavity facet and a second insulating film, made of AlOXNY (0?X<1.5, 0?Y?1), formed on a surface on an opposite side of the first insulating film to the first cavity facet. A first interface between the first insulating film and the second insulating film has a first recess portion and a first projection portion.

Abstract: This semiconductor laser element includes a semiconductor element layer including an active layer and having an emitting side cavity facet and a reflecting side cavity facet, and a facet coating film on a surface of the emitting side cavity facet. The facet coating film includes a first dielectric layer controlling a reflectance of the emitting side cavity facet and a second dielectric layer. A thickness of the second dielectric layer is set to a thickness defined by m×?/(2×n) (m is an integer), where a wavelength of a laser beam emitted from the active layer is ?. and a refractive index of the second dielectric layer is n, and is larger than a thickness of the first dielectric layer and at least 1 ?m.

Abstract: This semiconductor laser element includes a semiconductor element layer including an active layer and having an emitting side cavity facet and a reflecting side cavity facet, and a facet coating film on a surface of the emitting side cavity facet. The facet coating film includes a photocatalytic layer arranged on an outermost surface of the facet coating film and a dielectric layer arranged between the photocatalytic layer and the emitting side cavity facet. A thickness of the dielectric layer is set to a thickness defined by m×?/(2×n) (m is an integer), where a wavelength of a laser beam emitted from the active layer is ? and a refractive index of the dielectric layer is n, and at least 1 ?m.

Abstract: A semiconductor laser device capable of improving the reliability of the laser device is obtained. This semiconductor laser device (1000) includes a semiconductor element layer (20) having a light emitting layer (25), a first cavity facet (1) formed on an end portion on a light emitting side of a region of the semiconductor element layer including the light emitting layer, a first insulating film (40) in which a first nitride film (41), a first intermediate film including a first oxide film (42) and a second nitride film (43) are formed on the first cavity facet in this order from the side of the first cavity facet and a second insulating film (51), formed on the first insulating film, including a second oxide film (51).

Abstract: One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.

Abstract: One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.

Abstract: One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.

Abstract: In this semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp thereof and the base varies with the warp of the semiconductor laser element at least along a first direction corresponding to an extensional direction of a cavity or a second direction, while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance between the convex side of the warp of the semiconductor laser element in at least either the first direction or the second direction of the semiconductor laser element and the base is substantially the smallest.

Abstract: In a semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp of the semiconductor laser element and the base varies with the warp of the semiconductor laser element along a first direction corresponding to an extensional direction of a cavity while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance is the largest.

Abstract: This semiconductor laser device includes a semiconductor element layer having an active layer and a cavity facet and a facet coating film arranged on the cavity facet, while the facet coating film includes an oxide film made of hafnium silicate (HfSiO) or hafnium aluminate (HfAlO), and the facet coating film further has a nitrogen-containing film, in contact with the cavity facet, between the cavity facet and the oxide film.

Abstract: A light emitting device includes a light emitting element mounted on a base; a phosphor-containing transparent resin section which contains a phosphor for absorbing light emitted from the light emitting element and for emitting light having a wavelength different from that of the absorbed light, and which is filled in the base while containing the light emitting element mounted on the base and with the light emitting element covered therewith; and a high-concentration phosphor-containing resin layers, which is formed on a section directly above the light emitting element, and which has a phosphor concentration higher than that of the phosphor-containing transparent resin.

Abstract: A nitride-based semiconductor laser device includes a facet coating film including an alteration preventing layer formed on a light reflecting side facet of a nitride-based semiconductor element layer and a reflectance control layer formed on the alteration preventing layer. The reflectance control layer is formed by a high refractive index layer and a low refractive index layer which are alternately stacked, the alteration preventing layer is constituted by stacking at least two layers, each of which is formed by a dielectric layer made of a nitride, an oxide or an oxynitride. The alteration preventing layer has a first layer made of a nitride in contact with the light reflecting side facet, and a thickness of each of the layers constituting the alteration preventing layer is smaller than that of the high refractive index layer and is smaller than that of the low refractive index layer.

Abstract: A semiconductor laser device capable of improving the reliability of the laser device is obtained. This semiconductor laser device (1000) includes a semiconductor element layer (20) having a light emitting layer (25), a first cavity facet (1) formed on an end portion on a light emitting side of a region of the semiconductor element layer including the light emitting layer, a first insulating film (40) in which a first nitride film (41), a first intermediate film including a first oxide film (42) and a second nitride film (43) are formed on the first cavity facet in this order from the side of the first cavity facet and a second insulating film (51), formed on the first insulating film, including a second oxide film (51).

Abstract: A semiconductor laser device includes a first cavity facet formed on an end of the semiconductor element layer on a light-emitting side of a region including the light emitting layer, a first insulating film, made of AlN, formed on a surface of the first cavity facet and a second insulating film, made of AlOXNY (0?X<1.5, 0<Y?1), formed on a surface on an opposite side of the first insulating film to the first cavity facet. A first interface between the first insulating film and the second insulating film has a first recess portion and a first projection portion.

Abstract: One facet and the other facet of a nitride based semiconductor laser device are respectively composed of a cleavage plane of (0001) and a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including oxygen as a constituent element is formed on the one facet. A second protective film including nitrogen as a constituent element is formed on the other facet.

Abstract: One facet of a nitride based semiconductor laser device is composed of a cleavage plane of (0001), and the other facet thereof is composed of a cleavage plane of (000 1). Thus, the one facet and the other facet are respectively a Ga polar plane and an N polar plane. A portion of the one facet and a portion of the other facet, which are positioned in an optical waveguide, constitute a pair of cavity facets. A first protective film including nitrogen as a constituent element is formed on the one facet. A second protective film including oxygen as a constituent element is formed on the other facet.

Abstract: In this semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp thereof and the base varies with the warp of the semiconductor laser element at least along a first direction corresponding to an extensional direction of a cavity or a second direction, while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance between the convex side of the warp of the semiconductor laser element in at least either the first direction or the second direction of the semiconductor laser element and the base is substantially the smallest.

Abstract: In a semiconductor laser device, a semiconductor laser element is so fixed to a base that a distance between a convex side of a warp of the semiconductor laser element and the base varies with the warp of the semiconductor laser element along a first direction corresponding to an extensional direction of a cavity while a wire bonding portion is provided around a portion of an electrode layer corresponding to the vicinity of a region where the distance is the largest.

Abstract: A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.