Abstract: A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.

Abstract: An LED device includes; an LED chip, a first layer provided on the LED chip, a second layer provided on the first layer, and a third layer provided on the second layer. The first layer has a refractive index n1. The second layer has a refractive index n2, and includes phosphors emitting fluorescence light by absorption of excitation light emitted from the LED chip. The third layer has a refractive index n3. The refractive index n2 is larger than the refractive index n3.

Abstract: A light emitting device includes a light emitting element mounted on a base; a phosphor-containing transparent resin section which contains a phosphor for absorbing light emitted from the light emitting element and for emitting light having a wavelength different from that of the absorbed light, and which is filled in the base while containing the light emitting element mounted on the base and with the light emitting element covered therewith; and a high-concentration phosphor-containing resin layers, which is formed on a section directly above the light emitting element, and which has a phosphor concentration higher than that of the phosphor-containing transparent resin.

Abstract: The present invention provides a wave plate capable of obtaining preferable phase conversion characteristic over a wide wavelength range. The wave plate includes an aluminum oxide film having linear grating groove patterns. The period L (?m) and the duty ratio De of the grating groove patterns are set at values within the first range specified by the following four formulas: L?0.65 L?2×10?14e31.263De L?6.0317De2?10.352De+5.0516 (De?0.85)2/0.442+(L?0.41)2/0.

Abstract: The present invention provides a wave plate capable of obtaining preferable phase conversion characteristic over a wide wavelength range. The wave plate includes an aluminum oxide film having linear grating groove patterns. The period L (?m) and the duty ratio De of the grating groove patterns are set at values within the first range specified by the following four formulas: L?0.65 L?2×10?14e31.263De L?6.0317De2?10.352De+5.0516 (De?0.85)2/0.442+(L?0.41)2/0.

Abstract: A semiconductor laser device capable of improving heat dissipativity, simplifying the fabrication process and improving the fabrication yield is obtained. This semiconductor laser device comprises a semiconductor layer formed on an emission layer while constituting a convex ridge portion, a current blocking layer consisting of a semiconductor formed to cover at least the side surfaces of the ridge portion, a first metal electrode formed to be in contact with the upper surface of the ridge portion and convex support portions arranged on both sides of the ridge portion at a prescribed interval from the ridge portion.