Abstract: A semiconductor device of the invention includes: a substrate having a hollowed hollow section on a top surface; a semiconductor chip mounted in the hollow section of the substrate; and a lid having a substantially plate-shaped top plate section that opposes the substrate and covers the hollow section, and having at least one pair of side wall sections that project from a circumference of the top plate section towards the substrate and that engage with a side surface of the substrate.

Abstract: A semiconductor device includes a substrate, a semiconductor chip having a diaphragm, which vibrates in response to sound pressure variations, and a circuit chip that is electrically connected to the semiconductor chip so as to control the semiconductor chip, wherein the semiconductor chip is fixed to the surface of the circuit chip whose backside is mounted on the surface of the substrate. Herein, a plurality of connection terminals formed on the backside of the semiconductor chip are electrically connected to a plurality of electrodes running through the circuit chip. A ring-shaped resin sheet is inserted between the semiconductor chip and the circuit chip. The semiconductor chip and the circuit chip vertically joined together are stored in a shield case having a mount member (e.g., a stage) and a cover member, wherein connection terminals of the circuit chip are exposed to the exterior via through holes of the stage.

Abstract: It is an object of the present invention to provide a fluororesin excellent in thin wall forming ability and capable of forming electric wire insulatings having good flame retardancy, thermal stability and electrical characteristics. The present invention relates to a fluororesin which does not cause cone break, when used for insulating a core wire having a diameter of 0.05 to 0.07 mm under the conditions of a resin temperature of 320 to 370° C., a drawdown rate [DDR] of 80 to 120, a draw rate balance [DRB] of 1.0, a wire coating speed of 700 feet/minute and a insulating thickness of 30 to 50 ?m.

Abstract: In a capacitor microphone, a diaphragm is positioned opposite to a fixed electrode for covering inner holes of a ring-shaped support, wherein when the diaphragm is deflected to approach the fixed electrode due to electrostatic attraction upon application of a bias voltage, internal stress that occurs on the diaphragm is canceled by compressive stress that is applied to the diaphragm in advance. The diaphragm is formed using a multilayered structure including a first thin film and a second thin film whose internal stress differs from the internal stress of the first thin film, thus adjusting the total internal stress thereof. The diaphragm can be formed in such a way that a center layer having a single-layered structure is sandwiched between first and second coating layers having controlled residual tensions and resistance against hydrofluoric acid.

Abstract: The present invention provides a laminate in which at least one fluororesin is used and which is highly impermeable to fuels. The present invention is a laminate having a layer (A) comprising a fluororesin and a layer (B) comprising a fluorine-free organic material, wherein said laminate has a fuel permeation rate of not higher than 1.5 g/m2/day.

Abstract: A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon substrate. The method comprises a step A of nitriding the surface of the substrate and a step B of depositing or vapor depositing at least one atom layer of gallium.

Abstract: A method of manufacturing a semiconductor device manufactures a semiconductor device provided with plural kinds of Schottky barrier diodes having different forward voltages on one substrate. The method includes (a) a step of forming at least one Schottky barrier diode of a first kind, and (b) a step of forming at least one Schottky barrier diode of a second kind. The step (a) is performed by placing a first metal layer at a first surface part of a silicon substrate, and then by silicifying the first metal layer. The step (b) is performed by plating, at a second surface part of the silicon substrate which is different from the first surface part of the silicon substrate, a second metal layer which consists of a metal different from the metal consisting of the first metal layer and then by silicifying the second metal layer.