Abstract: A stator configured with an annular stator core, and a plurality of coils mounted on the stator core. The bus bar portion being connected to the terminal portion of a different one of the coils of the same phase. The coil is a multi-layer coil that is formed by winding the conductor in a plurality of layers in an inside-outside direction of loops in the winding portion, and that includes on inner and outer peripheral sides of a coil end portion of the coil a plurality of lane change portions formed by the conductor. The bus bar portion is embedded in a clearance between the lane change portions of the coil of a different phase placed between the coils of the same phase which are connected to each other.

Abstract: A resonator has a volume chamber, which is communicated with a surge tank through a communication passage. A primary intake passage communicates between a cylinder of an internal combustion engine and the surge tank. A secondary intake passage communicates between the surge tank and one of the cylinder and the primary intake passage. A passage length of the secondary intake passage is shorter than a passage length of the primary intake passage. A variable intake valve is fixed to a shaft. The variable intake valve opens and closes the secondary intake passage. A resonator valve is fixed to the shaft. The resonator valve opens and closes the communication passage. A drive device rotates the shaft to drive the variable intake valve and the resonator valve.

Abstract: A three phase stator configured with phases that are U-phase, V-phase, and W-phase. The stator is configured such that a bus bar portion includes a joint that is formed at an end and is joined to a terminal portion of a different one of the coils. A connecting portion is formed between the joint portion and the winding portion. In the coils, a first coil and a second coil serve as the two coils joined to each other by the joint portion of the bus bar portion of the first coil and the terminal portion of the second coil, and ends of the terminal portions of middle coils are the coils disposed between the first coil and the second coil are located at a height closer to the stator core than the connecting portion of the first coil in a direction of a central axis of the stator core.

Abstract: A stator configured with an annular stator core, and a plurality of coils mounted on the stator core and each including a winding portion formed by winding a rectangular conductor in a loop shape, a bus bar portion extended from one end in a radial direction of the stator core in the winding portion, and a terminal portion extended from the other end in the radial direction of the stator core in the winding portion. A bus bar portion is formed so that a longitudinal direction extends perpendicularly to a direction of a central axis of the stator core. The terminal portion is formed so that the longitudinal direction extends perpendicularly to the direction of the central axis of the stator core. The bus bar portion is joined to the terminal portion of a different one of the coils.

Abstract: A method for refining hot metal in a converter using a top-blowing lance having a refining powder supply channel, a combustion oxidizing gas supply channel, and a refining oxidizing gas supply channel that are separate from each other includes supplying at least one of a lime-based flux, iron oxide, and a combustible material as a refining powder from the refining powder supply channel to a surface of the hot metal using a fuel gas or a mixture of the fuel gas and an inert gas as a carrier gas while supplying a combustion oxidizing gas from the combustion oxidizing gas supply channel to form a flame below a leading end of the top-blowing lance, and supplying a refining oxidizing gas from the refining oxidizing gas supply channel to the surface of the hot metal.

Abstract: An apparatus capable of performing a photo alignment process on a plate-shaped member and realizing high productivity is provided. An irradiating unit irradiates an irradiated area with polarized light, and a stage movement mechanism transports first and second stages on which substrates are mounted alternately to the irradiated area and returns the same. A space larger than a length by which the substrate on the second stage passes through the irradiated area is secured between the first stage positioned at a first substrate mounting-and-collecting position and the irradiated area, and a space larger than a length by which the substrate on the first stage passes through the irradiated area is secured between the second stage positioned at a second substrate mounting-and-collecting position and the irradiated area.

Abstract: A top-blowing lance includes a refining oxygen gas blowing nozzle having a plurality of ejection openings through which oxygen gas is blown into an iron bath in a reaction vessel, the ejection openings being disposed along a circular orbit at intervals, and a burner nozzle having an axis coaxial with the central axis of the circular orbit, forming a flame inside the refining oxygen gas blowing nozzle, and having ejection openings for blowing a powder heated by the flame into the iron bath, wherein an indicator A that indicates the positional relationship between the ejection openings of the refining oxygen gas blowing nozzle and the ejection openings of the burner nozzle satisfies the specified conditions.

Abstract: According to an embodiment, a trench structure and a second semiconductor layer are provided in a semiconductor device. In the trench structure, a trench is provided in a surface of a device termination portion with a first semiconductor layer of a first conductive type including a device portion and the device termination portion, and an insulator is buried in the trench in such a manner to cover the trench. The second semiconductor layer, which is of a second conductive type, is provided on the surface of the first semiconductor layer, is in contact with at least a side on the device portion of the trench, and has a smaller depth than the trench. The insulator and a top passivation film for the semiconductor device are made of the same material.

Abstract: A plasma generator has a first member 2 containing a dielectric material, and an electrode group composed of a plurality of electrodes and including a first assembly 6 partially including a plurality of electrodes and a second assembly 7 partially including a plurality of electrodes. In accordance with an AC voltage, the first assembly 6 generates a plasma in a first space 23 contacting the first member 2. In accordance with a DC voltage, the second assembly 7 generates an electric field in a second space 24 contacting the first member 2 and communicating with the first space 23. At least one or more electrodes of a portion of the first assembly 6 and at least one or more electrodes of a portion of the second assembly 7 are provided on the surface of or in the inside of the first member 2.

Abstract: An intake manifold is equipped with a sub-stream passage connected to branch passages through respective connection ports to introduce intake-air substream other than intake-air mainstream to the plural branch passages. Two of the branch passages which communicate with each other through the sub-stream passage and successively introduce intake air to the internal combustion engine are defined as a first combination. Of the first combinations, a second combination is defined to have a shortest communication length via the sub-stream passage. Of the second combination, the connection port of one of the branch passages where the intake air is introduced later is narrower than that of the other of the branch passages where the intake air is introduced earlier.

Abstract: A resonator has a volume chamber, which is communicated with a surge tank through a communication passage. A primary intake passage communicates between a cylinder of an internal combustion engine and the surge tank. A secondary intake passage communicates between the surge tank and one of the cylinder and the primary intake passage. A passage length of the secondary intake passage is shorter than a passage length of the primary intake passage. A variable intake valve is fixed to a shaft. The variable intake valve opens and closes the secondary intake passage. A resonator valve is fixed to the shaft. The resonator valve opens and closes the communication passage. A drive device rotates the shaft to drive the variable intake valve and the resonator valve.

Abstract: According to an embodiment, a trench structure and a second semiconductor layer are provided in a semiconductor device. In the trench structure, a trench is provided in a surface of a device termination portion with a first semiconductor layer of a first conductive type including a device portion and the device termination portion, and an insulator is buried in the trench in such a manner to cover the trench. The second semiconductor layer, which is of a second conductive type, is provided on the surface of the first semiconductor layer, is in contact with at least a side on the device portion of the trench, and has a smaller depth than the trench. The insulator and a top passivation film for the semiconductor device are made of the same material.

Abstract: A first reception section is operable to receive an input to designate thumbnails of printing images from an image storage server. A first transmitter is operable to transmit an image transmission request for requesting the thumbnails to the image storage server when the input to designate the thumbnails is received by the first reception section. A first receiver is operable to receive the thumbnails from the image storage server. A second reception section is operable to receive a designation of the printing images based on the thumbnails received by the first receiver. A local area transceiver is operable to transmit an identification information request for requesting identification information of a printing device to the printing device using a local area radio communication and receives the identification information from the printing device.

Abstract: This invention offers a method for forming multilayer coating film by successively applying onto a coating object a water-based first coloring paint, water-based second coloring paint and clear paint, and simultaneously baking the resultant first coloring coating film, second coloring coating film and clear coating film, in which the water-based first coloring paint (A) comprises polyester resin and curing agent, the polyester resin containing benzene ring and cyclohexane ring in its molecules, their combined content in the polyester resin being within a range of 1.0-2.2 mols/kg (solid resin content); and that the curing agent is at least one compound selected from the group consisting of isocyanate group-containing compound, oxazoline group-containing compound, carbodiimide group-containing compound, hydrazide group-containing compound and semicarbazide group-containing compound.

Abstract: An engine starting device includes a drainage member which is attached to an attachment hole provided in a machine casing of the device and drains water intruded in the device. The drainage member includes: a torso section; a neck section; a flange section and a claw section, which are integrally configured with the neck section, and in which when the neck section is fitted in the hole, the flange section comes in contact with the inside of the casing and the claw section comes in contact with the outside of the casing, at least one section of the claw section being formed on the outside of the torso section; and partition plates separated in parallel so as to be capable of being overlapped each other and easily deformed when the claw section is pressed from the outside to the inner periphery of the torso section at the claw section.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a gate region, a gate insulating film, and an electric field relaxation region. The first semiconductor region includes a first portion and a second portion. The second semiconductor region includes a third portion and a fourth portion. The third semiconductor region includes a fifth portion and a sixth portion. The fourth semiconductor region is adjacent to the sixth portion. The gate region is provided inside a trench made in a second direction orthogonal to the first direction. The gate insulating film is provided between the gate region and an inner wall of the trench. The electric field relaxation region is provided between the third portion and the fifth portion and has an impurity concentration lower than an impurity concentration of the third semiconductor region.

Abstract: A method for manufacturing a semiconductor device, includes: forming a first-conductivity-type semiconductor region on a semiconductor layer; forming a mask member on the first-conductivity-type semiconductor region; selectively forming an opening in the mask member; etching the first-conductivity-type semiconductor region exposed to the opening to form a trench having a larger diameter than the opening and an eaves-like mask projected above the trench and made of the mask member; and forming a second-conductivity-type semiconductor region in the trench below the eaves-like mask by epitaxial growth to form a structure section in which the first-conductivity-type semiconductor region and the second-conductivity-type semiconductor region are alternately repeated in a direction generally parallel to a major surface of the semiconductor layer.

Abstract: The present invention provides an aqueous intermediate coating composition comprising: (A) a resin containing hydroxyl and carboxyl groups with a hydroxyl value of 100 to 200 mg KOH/g and an acid value of 20 to 50 mg KOH/g; (B) at least one curing agent selected from the group consisting of melamine resins and blocked polyisocyanate compounds; and (C) flat pigment particles; the molecular weight distribution of a curable resin component comprising component (A) and component (B) including from 30 to 50% by weight of a component with a molecular weight of less than 1,000, and 10% by weight or less of a component with a molecular weight exceeding 100,000; the proportion of component (C) being from 2 to 15 parts by weight based on 100 parts by weight of the resin component; and when the intermediate coating composition is applied to an undercoating film, pre-dried at 100° C. for 30 minutes and then heat-cured at 145° C.

Abstract: A plasma generator has a first member 2 containing a dielectric material, and an electrode group composed of a plurality of electrodes and including a first assembly 6 partially including a plurality of electrodes and a second assembly 7 partially including a plurality of electrodes. In accordance with an AC voltage, the first assembly 6 generates a plasma in a first space 23 contacting the first member 2. In accordance with a DC voltage, the second assembly 7 generates an electric field in a second space 24 contacting the first member 2 and communicating with the first space 23. At least one or more electrodes of a portion of the first assembly 6 and at least one or more electrodes of a portion of the second assembly 7 are provided on the surface of or in the inside of the first member 2.

Abstract: An intake manifold is provided with partitions which divide the lower space formed under opening ends. An intake air is prevented from flowing into the lower space by the partitions. Since the intake air can be efficiently suctioned to each opening ends, pressure loss of the intake air can be reduced.