Abstract: A method for producing low-carbon ferromanganese capable of achieving a high Mn yield. In producing low-carbon ferromanganese by blowing an oxidizing gas from a top-blowing lance onto a bath face of high-carbon ferromanganese molten metal accommodated in a reaction vessel provided with a top-blowing lance and bottom-blowing tuyere to perform decarburization, the slag composition during the blowing is adjusted so that a value of (CaO+MgO)/(Al2O3+SiO2) on a mass basis in the slag composition is not less than 0.4 but not more than 5.0. Also, agitation is performed under a condition that an agitation power density ? of an agitation gas blown through the bottom-blowing tuyere is not less than 500 W/t.

Abstract: A housing has a housing main body and an outlet port. The housing main body includes a cylindrical housing inner wall that defines an internal space therein. The outlet port fluidly connects the internal space and an outside of the housing main body to each other. The valve has a valve body rotatable about an rotation axis along a rotation axis of the cylindrical housing inner wall. The valve is configured to selectively open and close the outlet port depending on a rotation position of the valve. The housing inner wall is formed such that a distance between the housing inner wall and the axis of the housing inner wall varies in a circumferential direction.

Abstract: A housing has a housing main body and an outlet port. The housing main body includes a cylindrical housing inner wall that defines an internal space therein. The outlet port fluidly connects the internal space and an outside of the housing main body to each other. The valve has a valve body rotatable about an rotation axis along a rotation axis of the cylindrical housing inner wall. The valve is configured to selectively open and close the outlet port depending on a rotation position of the valve. The housing inner wall is formed such that a distance between the housing inner wall and the axis of the housing inner wall varies in a circumferential direction.

Abstract: A housing has a housing main body and an outlet port. The housing main body includes a cylindrical housing inner wall that defines an internal space therein. The outlet port fluidly connects the internal space and an outside of the housing main body to each other. The valve has a valve body rotatable about an rotation axis along a rotation axis of the cylindrical housing inner wall. The valve is configured to selectively open and close the outlet port depending on a rotation position of the valve. The housing inner wall is formed such that a distance between the housing inner wall and the axis of the housing inner wall varies in a circumferential direction.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second electrode, a gate electrode, second semiconductor regions of a second conductivity type, third semiconductor regions of the first conductivity type, and a third electrode. The second electrode is provided in a plurality in second and third directions. Each second electrode opposes a portion of the first semiconductor region in the second and third directions with an insulating layer interposed. The gate electrode is provided around each second electrode. The first semiconductor region includes first regions provided respectively around the second electrodes and the second region provided around the first regions in the second and third directions. Impurity concentration of the first conductivity type in each of the first regions is higher than impurity concentration of the first conductivity type in the second region.

Abstract: A top-blowing lance nozzle is configured to freely switch an adequate expansion condition so as to control an oxygen-blowing amount and a jetting velocity independently of each other without requiring a plurality of lance nozzles or a mechanically movable part. A lance nozzle is configured to blow refining oxygen to molten iron charged in a reaction vessel while a gas is blown from a top-blowing lance to the molten iron. One or more blowing holes for blowing a working gas are on an inner wall side surface of the nozzle, at a site where the lance nozzle has a minimum cross-sectional area in a nozzle axis direction or at a neighboring site of the site.

Abstract: A housing has a housing main body and an outlet port. The housing main body includes a cylindrical housing inner wall that defines an internal space therein. The outlet port fluidly connects the internal space and an outside of the housing main body to each other. The valve has a valve body rotatable about an rotation axis along a rotation axis of the cylindrical housing inner wall. The valve is configured to selectively open and close the outlet port depending on a rotation position of the valve. The housing inner wall is formed such that a distance between the housing inner wall and the axis of the housing inner wall varies in a circumferential direction.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second electrode, a gate electrode, second semiconductor regions of a second conductivity type, third semiconductor regions of the first conductivity type, and a third electrode. The second electrode is provided in a plurality in second and third directions. Each second electrode opposes a portion of the first semiconductor region in the second and third directions with an insulating layer interposed. The gate electrode is provided around each second electrode. The first semiconductor region includes first regions provided respectively around the second electrodes and the second region provided around the first regions in the second and third directions. Impurity concentration of the first conductivity type in each of the first regions is higher than impurity concentration of the first conductivity type in the second region.

Abstract: A probe pin inspection mechanism a includes a base, a pair of movable bodies, a pair of movable-body elastic bodies, and a conductor. The movable bodies are supported by the base to be movable in a first direction from a first position with respect to the base, and respectively include ends and terminals electrically connected to the respective ends. The movable-body elastic bodies elastically press the movable bodies in a second direction. The conductor is supported by the base and electrically connects the terminals of the movable bodies by making contact with the terminals. The state between the terminals and the conductor is switched, according to the position of the movable bodies, between a conductive state in which the terminals and the conductor are in contact with each other and a non-conductive state in which the terminals and the conductor are separated from each other.

Abstract: According to one embodiment, a semiconductor device includes first and second electrodes, first, fourth, and sixth semiconductor regions of a first conductivity type, a junction region, a fifth semiconductor region of a second conductivity type, and a gate electrode. The junction region includes a second semiconductor region of the first conductivity type and a third second semiconductor region of the second conductivity type. The second semiconductor regions and the third semiconductor regions are alternately provided in a second direction perpendicular to a first direction. A concentration of at least one first element selected from the group consisting of a heavy metal element and a proton in the junction region is greater a concentration of the first element in the fourth semiconductor region, or a density of traps in the junction region is greater than that in the first semiconductor region and greater than that in the fourth semiconductor region.

Abstract: A combustor is provided with a combustion liner (12) in which a combustion gas flows through the inner peripheral side and a plurality of through-holes (14) are formed, and a sound attenuator (20) having a space-forming member (21) configured to form a space (S) connected to the plurality of through-holes (14) at the outer peripheral side of the combustion liner (12). The space-forming member has a main body having an opening configured to bring an outside and the space in communication with each other, and a lid joined to an outer surface of the main body via a welded portion and configured to protrude outward and close the opening.

Abstract: A method for forming a coil that is formed by winding a flat rectangular conductor wire a plurality of times, the method includes forming, in the coil end portion, an offset portion bent in a stacking direction of the flat rectangular conductor wire with an offset in the stacking direction of the flat rectangular conductor wire by an amount corresponding to a width of the single flat rectangular conductor wire by moving the outer die on the one side in the divided outer die relative to the outer die on the other side in a direction along the stacking direction.

Abstract: A semiconductor device according to an embodiment includes a semiconductor substrate having a first plane and a second plane, a semiconductor element provided in the semiconductor substrate, the semiconductor element including a gate insulating film provided in the first plane, a first electrode provided on the first plane, a second electrode provided on the first electrode, the second electrode including a first metal material, the second electrode having a film thickness of (65 [g·?m·cm?3])/(density of the first metal material [g·cm?3]) or more, a first solder portion provided on the second electrode, a third electrode provided on the first solder portion, a fourth electrode provided on the first plane, a fifth electrode provided on the fourth electrode, the fifth electrode including a second metal material, the fifth electrode having a film thickness of (65 [g·?m·cm?3])/(density of the second metal material [g·cm?3]) or more, a second solder portion provided on the fifth electrode, and a sixth electrode pr

Abstract: A valve device includes a valve housing, a valve member, a limiter, a contact portion and a shaft. The valve housing has an inside space and a plurality of housing-side openings. The housing-side openings communicate between the inside space and an outside of the valve housing. The valve member is rotatably received in the valve housing and has: a plurality of valve-member-side openings, each of which is configured to communicate with a corresponding one of the housing-side openings; and a communication passage, through which the valve-member-side openings is communicated with each other. The limiter is configured to limit rotation of the valve member. The contact portion is provided in a space of the valve member and is configured to contact the limiter. The shaft rotatably supports the valve member.

Abstract: A housing has a housing main body and an outlet port. The housing main body includes a cylindrical housing inner wall that defines an internal space therein. The outlet port fluidly connects the internal space and an outside of the housing main body to each other. The valve has a valve body rotatable about an rotation axis along a rotation axis of the cylindrical housing inner wall. The valve is configured to selectively open and close the outlet port depending on a rotation position of the valve. The housing inner wall is formed such that a distance between the housing inner wall and the axis of the housing inner wall varies in a circumferential direction.

Abstract: According to one embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, a second electrode, a gate electrode, second semiconductor regions of a second conductivity type, third semiconductor regions of the first conductivity type, and a third electrode. The second electrode is provided in a plurality in second and third directions. Each second electrode opposes a portion of the first semiconductor region in the second and third directions with an insulating layer interposed. The gate electrode is provided around each second electrode. The first semiconductor region includes first regions provided respectively around the second electrodes and the second region provided around the first regions in the second and third directions. Impurity concentration of the first conductivity type in each of the first regions is higher than impurity concentration of the first conductivity type in the second region.

Abstract: A stator assembly method in which coils that have slot housed portions and coil ends formed from a conductive wire are mounted to an annular stator core that has a plurality of teeth that extend from a back yoke toward an inner side in a radial direction and slots formed between two of the teeth.

Abstract: A stator, wherein the coil unit includes a coil end portion projecting from an axial end face of the stator core; the coil end portion includes a plurality of peak portions projecting axially outward and arranged in a circumferential direction, and a plurality of lead wire portions for supplying electric power to the coils; and each of the lead wire portions includes an extension portion extending at least in an axial direction, and a bent portion that is bent at least from the axial direction to a radial direction, at least a part of the bent portion being disposed on a stator core side with respect to the peak portions in the axial direction, in a space between the peak portions that are closest to the extension portion in the radial direction and that are adjacent in the circumferential direction.

Abstract: A rotating electrical machine that includes a rotor core; a stator core disposed so as to face the rotor core in a radial direction and including a plurality of teeth and a plurality of slots each located between adjacent ones of the teeth; and a concentric coil formed by concentrically winding a wire, and including a slot accommodated portion placed in the slot of the stator core and a coil end portion projecting in an axial direction from the stator core, wherein of the slot accommodated portion of the concentric coil, an axial end of the slot accommodated portion located on a side facing the rotor core is located closer to an outside in the radial direction than an axial middle part of the slot accommodated portion located on the side facing the rotor core.

Abstract: A combustor pipe is linked to a vane shroud in which a vane is provided, and includes an inlet, an outlet, an inner pipe of which an inner space is a flow path for passing a combustion gas, a first cooling flow path through which a cooling medium passes being formed inside a wall that forms the flow path; and an outer pipe on an outer circumference of the inner pipe and secured to the inner pipe. A second cooling flow path through which a cooling medium passes and which is connected to the first cooling flow path near the outlet of the combustor pipe is formed between an outer circumferential surface of the inner pipe and an inner circumferential surface of the outer pipe, and a cooling promoting structure is formed on the outer pipe, inside the second cooling flow path near the first cooling flow path.