Abstract: It aims to provide a heavy duty pneumatic tire with block patterns and capable of improving deflected wear resisting performances without sacrificing wet grip performances or on-snow performances and that can particularly be favorably used for all seasons.

Abstract: A method of manufacturing a semiconductor device, including forming an opening in an interlevel insulating film disposed on a semiconductor substrate, forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening, forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer, and performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film.

Abstract: A pneumatic tire is provided in the tread portion (2) with a circumferential groove (3, 3b, 3c) extending continuously in the tire circumferential direction and having a pair of oppositely opposed groove walls (6). The circumferential groove (3, 3b, 3c) is provided in at least one of the groove walls (6) with radial grooves (9) arranged along the longitudinal direction of the circumferential groove (3). The radially outer end (9o) of the radial groove (9) is positioned in a range (a1) of from 0 to 20% of the depth (GDt) of the circumferential groove. The radially inner end (9i) of the radial groove (9) is positioned in a range (a2) of from 80 to 100% of the depth (GDt) of the circumferential groove. The radial groove has an opening width (g) of not less than 1.0 mm, but not more than 6.0 mm.

Abstract: A method of manufacturing a semiconductor device, including forming an opening in an interlevel insulating film disposed on a semiconductor substrate, forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening, forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer, and performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film.

Abstract: A heavy duty tire is vulcanized in a segmented mold having a tread molding surface defined by circumferentially arranged segments. The tread portion is molded by the tread molding surface during vulcanization of the tire, wherein the stretch of the belt layer in the tire radial direction during vulcanization is in a range of from 3.2 to 5.2%. the tread portion is provided with an axially outermost circumferential groove at an axial distance from the tire equator which distance is in a range of from 50% to 68% of one half of the tread width. The footprint shape satisfies the following conditions: (1) 1.05=<SL0/SL70=<1.18; and (2) 0.95=<SL70/SL97=<1.05, wherein SL0, SL70 and SL97 are the circumferential lengths of the footprint shape measured at axial distances of 0%, 70% and 97%, respectively, of one half of the tread width from the tire equator.

Abstract: A method of manufacturing a semiconductor device, including forming an opening in an interlevel insulating film disposed on a semiconductor substrate, forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening, forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer, and performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film.

Abstract: A heavy-duty tire having a tread portion improved in the shoulder wear is disclosed. Under the maximum load condition[W100], the tread portion has a ground contacting face G[W100] having circumferential lengths L97[W100] and L70[W100] at specific axial positions. Under the 70% load condition[W70], the tread portion has a ground contacting face G[W70] having lengths L97[W70] and L70[W70] at specific axial positions. The lengths L70[W100], L97[W100], L70[W70] and L97[W70] satisfy specific conditions: 0.95<L70[W100]/L97[W100]<1.05; and 1.03<L70[W70]/L97[W70]<1.20.

Abstract: Disclosed is a semiconductor storage device including a first electrode formed by being embedded in an insulating film formed on a substrate, a second electrode formed to be opposed to the first electrode, a storage layer formed between the first electrode and the second electrode, the storage layer being on a side of the first electrode, an ion source layer formed between the storage layer and the second electrode, and a diffusion prevention layer formed of a manganese oxide layer between the insulating film and the first electrode.

Abstract: It aims to provide a heavy duty pneumatic tire with block patterns and capable of improving deflected wear resisting performances without sacrificing wet grip performances or on-snow performances and that can particularly be favorably used for all seasons.

Abstract: Provided is a plasma processing apparatus featuring highly improved plasma ignition property and ignition stability by defining a positional relationship between a dielectric and the slots. A plasma processing apparatus 11 includes a processing chamber 12 having a top opening; a dielectric 15 which has inclined surfaces 16a and 16b on a bottom surface thereof so that a thickness dimension is successively varied, and is disposed so as to close the top opening of the processing chamber 12; and an antenna 24 disposed on a top surface of the dielectric 15, for supplying microwave to the dielectric 15, thereby generating plasma at the bottom surface of the dielectric 15. Further, the antenna 24 is provided with a plurality of slots 25 positioned uprightly above the inclined surfaces 16a and 16b.

Abstract: It aims to provide a heavy duty pneumatic tire with block patterns and capable of improving deflected wear resisting performances without sacrificing wet grip performances or on-snow performances and that can particularly be favorably used for all seasons.

Abstract: It aims to provide a heavy duty pneumatic tire with block patterns and capable of improving deflected wear resisting performances without sacrificing wet grip performances or on-snow performances and that can particularly be favorably used for all seasons.

Abstract: A magnetic head has an opposite face opposite to a magnetic disk, a main pole having a distal end face and an inclined face exposed to the opposite face, and a shield yoke extended substantially facing the opposite face. An end face on which the shield yoke is opposite to the main pole via a gap is inclined substantially in parallel to the inclined face of the main pole.

Abstract: A method of manufacturing a semiconductor device, including forming an opening in an interlevel insulating film disposed on a semiconductor substrate, forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening, forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer, and performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film.

Abstract: A pneumatic tire is provided in the tread portion (2) with a circumferential groove (3, 3b, 3c) extending continuously in the tire circumferential direction and having a pair of oppositely opposed groove walls (6). The circumferential groove (3, 3b, 3c) is provided in at least one of the groove walls (6) with radial grooves (9) arranged along the longitudinal direction of the circumferential groove (3). The radially outer end (9o) of the radial groove (9) is positioned in a range (a1) of from 0 to 20% of the depth (GDt) of the circumferential groove. The radially inner end (9i) of the radial groove (9) is positioned in a range (a2) of from 80 to 100% of the depth (GDt) of the circumferential groove. The radial groove has an opening width (g) of not less than 1.0 mm, but not more than 6.0 mm.

Abstract: A heavy duty tire is vulcanized in a segmented mold having a tread molding surface defined by circumferentially arranged segments. The tread portion is molded by the tread molding surface during vulcanization of the tire, wherein the stretch of the belt layer in the tire radial direction during vulcanization is in a range of from 3.2 to 5.2%. the tread portion is provided with an axially outermost circumferential groove at an axial distance from the tire equator which distance is in a range of from 50% to 68% of one half of the tread width. The footprint shape satisfies the following conditions: (1) 1.05=<SL0/SL70=<1.18; and (2) 0.95=<SL70/SL97=<1.05, wherein SL0, SL70 and SL97 are the circumferential lengths of the footprint shape measured at axial distances of 0%, 70% and 97%, respectively, of one half of the tread width from the tire equator.

Abstract: A semiconductor device includes an interlevel insulating film disposed on a semiconductor substrate and having an opening formed therein. An interconnection main layer, which contains Cu as a main component, is embedded in the opening. A barrier film is interposed between the interlevel insulating film and the interconnection main layer within the opening. The barrier film contains, as a main component, a compound of a predetermined metal element with a component element of the interlevel insulating film.